JP2021503686A - 製造プロセスにおける超局所化及びプラズマ均一性制御 - Google Patents
製造プロセスにおける超局所化及びプラズマ均一性制御 Download PDFInfo
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- JP2021503686A JP2021503686A JP2020518717A JP2020518717A JP2021503686A JP 2021503686 A JP2021503686 A JP 2021503686A JP 2020518717 A JP2020518717 A JP 2020518717A JP 2020518717 A JP2020518717 A JP 2020518717A JP 2021503686 A JP2021503686 A JP 2021503686A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
- H01J37/32385—Treating the edge of the workpieces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Abstract
Description
Claims (23)
- プラズマ処理システム内にプラズマを生成するための装置であって、
複数の構造体を有するアレイであって、各構造体が、
誘導要素(L)と、
容量要素(C)であって、前記誘導要素及び前記容量要素が共振回路を形成する、前記容量要素と、を含む、構造体のアレイと、
前記アレイに結合された電源であって、前記複数の構造体のうちの1つ以上の構造体の共振周波数で又は前記共振周波数の近傍で、前記共振回路に給電するように構成されている前記電源と
を備える、前記装置。 - 前記電源は、前記構造体に容量結合される、請求項1に記載の装置。
- 前記構造体のそれぞれは、前記共振周波数の自由空間波長よりも小さいサイズを有する、請求項1に記載の装置。
- 前記アレイの各構造体の前記誘導要素及び前記容量要素は同一の寸法を有する、請求項1に記載の装置。
- 前記アレイの1つ以上の構造体の前記誘導要素及び前記容量要素は異なる寸法を有する、請求項1に記載の装置。
- 前記構造体のアレイはセラミック内に封止される、請求項1に記載の装置。
- 前記セラミックはアルミナである、請求項6に記載の装置。
- 前記アレイに対向して、又は前記アレイに隣接して配置された基板チャックを更に備える、請求項1に記載の装置。
- 前記装置内に配置された基板チャックを更に備え、前記アレイは、前記基板チャックの周辺に配置される、請求項1に記載の装置。
- 前記共振周波数は、約2〜8GHzである、請求項1に記載の装置。
- 前記共振周波数は、約100MHz〜15GHzである、請求項1に記載の装置。
- 前記共振周波数は、前記容量要素及び前記誘導要素の配列又は寸法によって決定される、請求項1に記載の装置。
- 前記容量要素及び前記誘導要素は、約4mm〜8mmの幅である、請求項1に記載の装置。
- 前記構造体のそれぞれが約10mmで互いに離間される、請求項1に記載の装置。
- 前記構造体のそれぞれに含まれる局所ガス源を更に備え、ガスは、前記局所ガス源のそれぞれにおいて導入され、前記各構造体のそれぞれによって励起される、請求項1に記載の装置。
- 前記局所ガス源のそれぞれは、前記構造体内での不意の点火を防止するガードを含む、請求項15に記載の装置。
- 前記電源と前記構造体との間に配置された電力分配要素を更に備え、前記電力分配要素は、前記構造体に印加される電力又は周波数を前記構造体のアレイ内で変化させるように構成されている、請求項1に記載の装置。
- 前記電力分配要素は、少なくとも1つの構造体に電気的に結合された少なくとも1つのトランジスタを含む、請求項17に記載の装置。
- プラズマプロセスの方法であって、
1つ以上のプロセスガスをプラズマ室に提供することであって、前記プラズマ室が、プラズマ室内に配置された構造体のアレイを含み、各構造体が、共振回路を形成する容量要素(C)及び誘導要素(L)を含む、前記提供することと、
電源から前記構造体のアレイに振動電流を提供することであって、前記振動電流の前記提供が、共振周波数において前記容量要素(C)を荷電して前記容量要素(C)に近接した電場を生じさせ、前記電場が、前記誘導要素(L)に近接した磁場を誘起する、前記提供することと、
前記構造体に関連した前記電場又は前記磁場に近接した前記1つ以上のプロセスガス内でプラズマ状態を点弧することと、
を含む、前記方法。 - 振動電流を前記提供することは、前記構造体のそれぞれの互いからの位置を決定する電流波を含む、請求項19に記載の方法。
- 前記共振周波数は、前記構造体の1つ以上の寸法に少なくとも部分的に基づいている、請求項20に記載の方法。
- 前記構造体のアレイは、前記構造体のそれぞれについて同程度の機械的寸法を有する、請求項20に記載の方法。
- 前記構造体のアレイは、前記アレイ内の他の構造体とは異なる機械的寸法を有する少なくとも1つの構造体を含む、請求項20に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/723,005 | 2017-10-02 | ||
US15/723,005 US11551909B2 (en) | 2017-10-02 | 2017-10-02 | Ultra-localized and plasma uniformity control in a plasma processing system |
PCT/US2018/053373 WO2019070524A1 (en) | 2017-10-02 | 2018-09-28 | PLASMA UNIFORMITY CONTROL AND ULTRA-LOCALIZED IN A MANUFACTURING PROCESS |
Publications (2)
Publication Number | Publication Date |
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JP2021503686A true JP2021503686A (ja) | 2021-02-12 |
JP7264576B2 JP7264576B2 (ja) | 2023-04-25 |
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JP2020518717A Active JP7264576B2 (ja) | 2017-10-02 | 2018-09-28 | 製造プロセスにおける超局所化及びプラズマ均一性制御 |
Country Status (7)
Country | Link |
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US (1) | US11551909B2 (ja) |
JP (1) | JP7264576B2 (ja) |
KR (1) | KR20200051663A (ja) |
CN (1) | CN111183504B (ja) |
SG (1) | SG11202002555WA (ja) |
TW (1) | TW201929031A (ja) |
WO (1) | WO2019070524A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6852197B2 (ja) * | 2018-01-29 | 2021-03-31 | 株式会社アルバック | 反応性イオンエッチング装置 |
US11037765B2 (en) * | 2018-07-03 | 2021-06-15 | Tokyo Electron Limited | Resonant structure for electron cyclotron resonant (ECR) plasma ionization |
WO2023023289A1 (en) * | 2021-08-20 | 2023-02-23 | Tokyo Electron Limited | Apparatus for plasma processing |
KR102399398B1 (ko) * | 2021-09-27 | 2022-05-18 | 아리온주식회사 | 알에프 스플리트 조정 시스템 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003234338A (ja) * | 2002-02-08 | 2003-08-22 | Tokyo Electron Ltd | 誘導結合プラズマ処理装置 |
JP2007258570A (ja) * | 2006-03-24 | 2007-10-04 | Mitsui Eng & Shipbuild Co Ltd | プラズマ処理装置 |
WO2009093459A1 (ja) * | 2008-01-25 | 2009-07-30 | Mitsui Engineering & Shipbuilding Co., Ltd. | 原子層成長装置および薄膜形成方法 |
JP2014112672A (ja) * | 2012-11-30 | 2014-06-19 | Lam Research Corporation | 温度制御素子アレイを備えるesc用の電力切替システム |
JP2017004602A (ja) * | 2015-06-04 | 2017-01-05 | 日新電機株式会社 | プラズマ発生用のアンテナおよびそれを備えるプラズマ処理装置 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2997294A (en) * | 1955-09-15 | 1961-08-22 | Gen Electric | Apparatus for feeding, cutting and stacking material for capacitors |
US4864464A (en) * | 1989-01-09 | 1989-09-05 | Micron Technology, Inc. | Low-profile, folded-plate dram-cell capacitor fabricated with two mask steps |
US6353206B1 (en) * | 1996-05-30 | 2002-03-05 | Applied Materials, Inc. | Plasma system with a balanced source |
US6178920B1 (en) * | 1997-06-05 | 2001-01-30 | Applied Materials, Inc. | Plasma reactor with internal inductive antenna capable of generating helicon wave |
US6388226B1 (en) * | 1997-06-26 | 2002-05-14 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
US7100532B2 (en) | 2001-10-09 | 2006-09-05 | Plasma Control Systems, Llc | Plasma production device and method and RF driver circuit with adjustable duty cycle |
EP1480250A1 (en) * | 2003-05-22 | 2004-11-24 | HELYSSEN S.à.r.l. | A high density plasma reactor and RF-antenna therefor |
US20170213734A9 (en) | 2007-03-30 | 2017-07-27 | Alexei Marakhtanov | Multifrequency capacitively coupled plasma etch chamber |
US7976674B2 (en) * | 2007-06-13 | 2011-07-12 | Tokyo Electron Limited | Embedded multi-inductive large area plasma source |
JP5165993B2 (ja) | 2007-10-18 | 2013-03-21 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US9017533B2 (en) | 2008-07-15 | 2015-04-28 | Applied Materials, Inc. | Apparatus for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning |
JP5391659B2 (ja) * | 2008-11-18 | 2014-01-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5916044B2 (ja) * | 2010-09-28 | 2016-05-11 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2012133899A (ja) * | 2010-12-20 | 2012-07-12 | Nissin Electric Co Ltd | プラズマ処理装置 |
JP5781349B2 (ja) | 2011-03-30 | 2015-09-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5712874B2 (ja) * | 2011-09-05 | 2015-05-07 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
US9881772B2 (en) | 2012-03-28 | 2018-01-30 | Lam Research Corporation | Multi-radiofrequency impedance control for plasma uniformity tuning |
JP6084784B2 (ja) * | 2012-06-14 | 2017-02-22 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ生成装置、アンテナ構造体、及びプラズマ生成方法 |
US9368328B2 (en) | 2012-07-27 | 2016-06-14 | Trumpf Huettinger Sp. Z O. O. | Apparatus for generating and maintaining plasma for plasma processing |
US9293926B2 (en) | 2012-11-21 | 2016-03-22 | Lam Research Corporation | Plasma processing systems having multi-layer segmented electrodes and methods therefor |
US20140175055A1 (en) * | 2012-12-21 | 2014-06-26 | Qualcomm Mems Technologies, Inc. | Adjustable coil for inductively coupled plasma |
US10249511B2 (en) * | 2014-06-27 | 2019-04-02 | Lam Research Corporation | Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus |
-
2017
- 2017-10-02 US US15/723,005 patent/US11551909B2/en active Active
-
2018
- 2018-09-28 KR KR1020207008849A patent/KR20200051663A/ko not_active Application Discontinuation
- 2018-09-28 CN CN201880063202.7A patent/CN111183504B/zh active Active
- 2018-09-28 TW TW107134238A patent/TW201929031A/zh unknown
- 2018-09-28 SG SG11202002555WA patent/SG11202002555WA/en unknown
- 2018-09-28 WO PCT/US2018/053373 patent/WO2019070524A1/en active Application Filing
- 2018-09-28 JP JP2020518717A patent/JP7264576B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003234338A (ja) * | 2002-02-08 | 2003-08-22 | Tokyo Electron Ltd | 誘導結合プラズマ処理装置 |
JP2007258570A (ja) * | 2006-03-24 | 2007-10-04 | Mitsui Eng & Shipbuild Co Ltd | プラズマ処理装置 |
WO2009093459A1 (ja) * | 2008-01-25 | 2009-07-30 | Mitsui Engineering & Shipbuilding Co., Ltd. | 原子層成長装置および薄膜形成方法 |
JP2014112672A (ja) * | 2012-11-30 | 2014-06-19 | Lam Research Corporation | 温度制御素子アレイを備えるesc用の電力切替システム |
JP2017004602A (ja) * | 2015-06-04 | 2017-01-05 | 日新電機株式会社 | プラズマ発生用のアンテナおよびそれを備えるプラズマ処理装置 |
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CN111183504B (zh) | 2023-07-21 |
JP7264576B2 (ja) | 2023-04-25 |
CN111183504A (zh) | 2020-05-19 |
KR20200051663A (ko) | 2020-05-13 |
TW201929031A (zh) | 2019-07-16 |
WO2019070524A1 (en) | 2019-04-11 |
US11551909B2 (en) | 2023-01-10 |
SG11202002555WA (en) | 2020-04-29 |
US20190103254A1 (en) | 2019-04-04 |
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