SG11202002555WA - Ultra-localized and plasma uniformity control in a fabrication process - Google Patents

Ultra-localized and plasma uniformity control in a fabrication process

Info

Publication number
SG11202002555WA
SG11202002555WA SG11202002555WA SG11202002555WA SG11202002555WA SG 11202002555W A SG11202002555W A SG 11202002555WA SG 11202002555W A SG11202002555W A SG 11202002555WA SG 11202002555W A SG11202002555W A SG 11202002555WA SG 11202002555W A SG11202002555W A SG 11202002555WA
Authority
SG
Singapore
Prior art keywords
localized
ultra
fabrication process
plasma uniformity
uniformity control
Prior art date
Application number
SG11202002555WA
Other languages
English (en)
Inventor
Barton G Lane
Peter G Ventzek
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG11202002555WA publication Critical patent/SG11202002555WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H01J37/32385—Treating the edge of the workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
SG11202002555WA 2017-10-02 2018-09-28 Ultra-localized and plasma uniformity control in a fabrication process SG11202002555WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/723,005 US11551909B2 (en) 2017-10-02 2017-10-02 Ultra-localized and plasma uniformity control in a plasma processing system
PCT/US2018/053373 WO2019070524A1 (en) 2017-10-02 2018-09-28 PLASMA UNIFORMITY CONTROL AND ULTRA-LOCALIZED IN A MANUFACTURING PROCESS

Publications (1)

Publication Number Publication Date
SG11202002555WA true SG11202002555WA (en) 2020-04-29

Family

ID=65896170

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202002555WA SG11202002555WA (en) 2017-10-02 2018-09-28 Ultra-localized and plasma uniformity control in a fabrication process

Country Status (7)

Country Link
US (1) US11551909B2 (ja)
JP (1) JP7264576B2 (ja)
KR (1) KR20200051663A (ja)
CN (1) CN111183504B (ja)
SG (1) SG11202002555WA (ja)
TW (1) TW201929031A (ja)
WO (1) WO2019070524A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6852197B2 (ja) * 2018-01-29 2021-03-31 株式会社アルバック 反応性イオンエッチング装置
US11037765B2 (en) * 2018-07-03 2021-06-15 Tokyo Electron Limited Resonant structure for electron cyclotron resonant (ECR) plasma ionization
WO2023023289A1 (en) * 2021-08-20 2023-02-23 Tokyo Electron Limited Apparatus for plasma processing
KR102399398B1 (ko) * 2021-09-27 2022-05-18 아리온주식회사 알에프 스플리트 조정 시스템

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2997294A (en) * 1955-09-15 1961-08-22 Gen Electric Apparatus for feeding, cutting and stacking material for capacitors
US4864464A (en) * 1989-01-09 1989-09-05 Micron Technology, Inc. Low-profile, folded-plate dram-cell capacitor fabricated with two mask steps
US6353206B1 (en) * 1996-05-30 2002-03-05 Applied Materials, Inc. Plasma system with a balanced source
US6178920B1 (en) * 1997-06-05 2001-01-30 Applied Materials, Inc. Plasma reactor with internal inductive antenna capable of generating helicon wave
US6388226B1 (en) * 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US7100532B2 (en) 2001-10-09 2006-09-05 Plasma Control Systems, Llc Plasma production device and method and RF driver circuit with adjustable duty cycle
JP2003234338A (ja) 2002-02-08 2003-08-22 Tokyo Electron Ltd 誘導結合プラズマ処理装置
EP1480250A1 (en) * 2003-05-22 2004-11-24 HELYSSEN S.à.r.l. A high density plasma reactor and RF-antenna therefor
JP2007258570A (ja) 2006-03-24 2007-10-04 Mitsui Eng & Shipbuild Co Ltd プラズマ処理装置
US20170213734A9 (en) 2007-03-30 2017-07-27 Alexei Marakhtanov Multifrequency capacitively coupled plasma etch chamber
US7976674B2 (en) * 2007-06-13 2011-07-12 Tokyo Electron Limited Embedded multi-inductive large area plasma source
JP5165993B2 (ja) 2007-10-18 2013-03-21 東京エレクトロン株式会社 プラズマ処理装置
WO2009093459A1 (ja) 2008-01-25 2009-07-30 Mitsui Engineering & Shipbuilding Co., Ltd. 原子層成長装置および薄膜形成方法
US9017533B2 (en) 2008-07-15 2015-04-28 Applied Materials, Inc. Apparatus for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning
JP5391659B2 (ja) * 2008-11-18 2014-01-15 東京エレクトロン株式会社 プラズマ処理装置
JP5916044B2 (ja) * 2010-09-28 2016-05-11 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2012133899A (ja) * 2010-12-20 2012-07-12 Nissin Electric Co Ltd プラズマ処理装置
JP5781349B2 (ja) 2011-03-30 2015-09-24 東京エレクトロン株式会社 プラズマ処理装置
JP5712874B2 (ja) * 2011-09-05 2015-05-07 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US9881772B2 (en) 2012-03-28 2018-01-30 Lam Research Corporation Multi-radiofrequency impedance control for plasma uniformity tuning
JP6084784B2 (ja) * 2012-06-14 2017-02-22 東京エレクトロン株式会社 プラズマ処理装置、プラズマ生成装置、アンテナ構造体、及びプラズマ生成方法
US9368328B2 (en) 2012-07-27 2016-06-14 Trumpf Huettinger Sp. Z O. O. Apparatus for generating and maintaining plasma for plasma processing
US9293926B2 (en) 2012-11-21 2016-03-22 Lam Research Corporation Plasma processing systems having multi-layer segmented electrodes and methods therefor
US10049948B2 (en) 2012-11-30 2018-08-14 Lam Research Corporation Power switching system for ESC with array of thermal control elements
US20140175055A1 (en) * 2012-12-21 2014-06-26 Qualcomm Mems Technologies, Inc. Adjustable coil for inductively coupled plasma
US10249511B2 (en) * 2014-06-27 2019-04-02 Lam Research Corporation Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus
JP2017004602A (ja) 2015-06-04 2017-01-05 日新電機株式会社 プラズマ発生用のアンテナおよびそれを備えるプラズマ処理装置

Also Published As

Publication number Publication date
JP2021503686A (ja) 2021-02-12
CN111183504B (zh) 2023-07-21
JP7264576B2 (ja) 2023-04-25
CN111183504A (zh) 2020-05-19
KR20200051663A (ko) 2020-05-13
TW201929031A (zh) 2019-07-16
WO2019070524A1 (en) 2019-04-11
US11551909B2 (en) 2023-01-10
US20190103254A1 (en) 2019-04-04

Similar Documents

Publication Publication Date Title
GB2607737B (en) Rule builder in a process control network
IL265743B (en) Metrology systems and process control methods
SG11201709189VA (en) Plasma resistant coating film and fabricating method thereof
SG10201702290WA (en) Plasma Processing Method
IL253880B (en) Process and system for communicating with a user antenna
EP3326790A4 (en) DEVICE AND METHOD FOR PRODUCING A THREE-DIMENSIONAL MOLDED BODY AND A MATERIAL SUPPLY UNIT USED IN THE DEVICE FOR PRODUCING A THREE-DIMENSIONAL MOLDED BODY
SG11202002555WA (en) Ultra-localized and plasma uniformity control in a fabrication process
LT3213608T (lt) Sistemos ir būdai plazmai formuoti ir palaikyti didelės galios atvirkštinės konfigūracijos laukuose (frc)
SG11202005088WA (en) Plasma processing apparatus and methods
EP3560298A4 (en) PLASMA CONTROL AND PRODUCTION DEVICE
EP3151171A4 (en) Cooking recipe supply method and control program
SG10201702291PA (en) Plasma Processing Method
SG11201912566WA (en) Plasma processing apparatus
SG11201912567RA (en) Plasma processing apparatus
IL295424B1 (en) Plasma source and method for its production
SG11201912655XA (en) Plasma processing apparatus
SG11201912564VA (en) Plasma processing apparatus
SG10202109658QA (en) Wafer level uniformity control in remote plasma film deposition
SG11201912569UA (en) Plasma processing apparatus
SG11201912232WA (en) Etching method and plasma etching material
GB2565469B (en) Non-thermal plasma emitters and devices for controlling
EP3365487A4 (en) Washing machine and controlling method thereof
GB201811678D0 (en) Display panel and process for manufacturing same
SG11202004504VA (en) Ring structures and systems for use in a plasma chamber
SG11202004968SA (en) Plasma etching method and plasma etching apparatus