JP2021121458A - 切削ブレードの位置検出方法 - Google Patents
切削ブレードの位置検出方法 Download PDFInfo
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- JP2021121458A JP2021121458A JP2020015006A JP2020015006A JP2021121458A JP 2021121458 A JP2021121458 A JP 2021121458A JP 2020015006 A JP2020015006 A JP 2020015006A JP 2020015006 A JP2020015006 A JP 2020015006A JP 2021121458 A JP2021121458 A JP 2021121458A
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- Prior art keywords
- groove
- work
- cutting blade
- cutting
- end portion
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- 238000005520 cutting process Methods 0.000 title claims abstract description 336
- 238000000034 method Methods 0.000 title claims abstract description 27
- 235000012431 wafers Nutrition 0.000 description 34
- 230000002093 peripheral effect Effects 0.000 description 26
- 230000007246 mechanism Effects 0.000 description 19
- 238000003754 machining Methods 0.000 description 14
- 238000003384 imaging method Methods 0.000 description 12
- 238000009966 trimming Methods 0.000 description 11
- 238000003860 storage Methods 0.000 description 10
- 238000007689 inspection Methods 0.000 description 9
- 238000001514 detection method Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 239000002173 cutting fluid Substances 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000003708 edge detection Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Dicing (AREA)
- Machine Tool Sensing Apparatuses (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Abstract
Description
11A 上層ワーク
11B 下層ワーク
13 デバイス
15 積層ワーク
21 ワーク(被加工物)
21a 表面
23A,23B 溝(切削溝)
23Aa,23Ab,23Ba,23Bb 端部(端辺)
2 切削装置
4 基台
6 移動機構
8 X軸ガイドレール
10 X軸移動テーブル
12 X軸ボールねじ
14 X軸パルスモータ
16 テーブルベース
18 保持テーブル(チャックテーブル)
18a 保持面
20 支持台
22 保持テーブル(サブチャックテーブル)
22a 保持面
24 ウォーターケース
26 支持構造
28 移動機構(移動ユニット)
30 Y軸ガイドレール
32 Y軸移動プレート
34 Y軸ボールねじ
36 Y軸パルスモータ
38 Z軸ガイドレール
40 Z軸移動プレート
42 Z軸ボールねじ
44 Z軸パルスモータ
46A,46B 切削ユニット
48 撮像ユニット(カメラ)
50 ハウジング
52 スピンドル(回転軸)
54A,54B 切削ブレード
54Aa,54Ab,54Ba,54Bb 側面(端部)
56 ノズル
58 表示部(表示装置)
60 制御部(制御ユニット)
62 処理部
64 記憶部
Claims (1)
- ワークを保持する保持テーブルと、該保持テーブルによって保持された該ワークを切削する切削ブレードが回転可能な状態で装着される切削ユニットと、を備える切削装置を用いて、該切削ブレードの下端位置を検出する切削ブレードの位置検出方法であって、
該切削ブレードを該ワークに切り込ませることによって形成された第1の溝を備える該ワークに、更に該切削ブレードを切り込ませ、該ワークに、幅方向の一端部が該第1の溝と重ならず、且つ、幅方向の他端部が該第1の溝と重なる第2の溝を形成する溝形成ステップと、
該ワークに形成された該第2の溝の幅方向の一端部の長さに基づいて、該切削ブレードの下端位置を算出する算出ステップと、を備えることを特徴とする切削ブレードの位置検出方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020015006A JP7418916B2 (ja) | 2020-01-31 | 2020-01-31 | 切削ブレードの位置検出方法 |
KR1020200183194A KR20210098322A (ko) | 2020-01-31 | 2020-12-24 | 절삭 블레이드의 위치 검출 방법 |
US17/147,610 US11658050B2 (en) | 2020-01-31 | 2021-01-13 | Cutting blade position detecting method |
CN202110117482.9A CN113276294A (zh) | 2020-01-31 | 2021-01-28 | 切削刀具的位置检测方法 |
TW110103207A TW202131400A (zh) | 2020-01-31 | 2021-01-28 | 切削刀的位置檢測方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020015006A JP7418916B2 (ja) | 2020-01-31 | 2020-01-31 | 切削ブレードの位置検出方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021121458A true JP2021121458A (ja) | 2021-08-26 |
JP7418916B2 JP7418916B2 (ja) | 2024-01-22 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020015006A Active JP7418916B2 (ja) | 2020-01-31 | 2020-01-31 | 切削ブレードの位置検出方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11658050B2 (ja) |
JP (1) | JP7418916B2 (ja) |
KR (1) | KR20210098322A (ja) |
CN (1) | CN113276294A (ja) |
TW (1) | TW202131400A (ja) |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3515917B2 (ja) | 1998-12-01 | 2004-04-05 | シャープ株式会社 | 半導体装置の製造方法 |
JP2002059365A (ja) | 2000-08-18 | 2002-02-26 | Disco Abrasive Syst Ltd | 切削装置の接触原点位置検出方法 |
JP6457327B2 (ja) | 2015-04-28 | 2019-01-23 | 株式会社ディスコ | セットアップ方法 |
JP6464028B2 (ja) | 2015-05-11 | 2019-02-06 | 株式会社ディスコ | 切削ブレードの外径サイズ検出方法 |
JP6655418B2 (ja) * | 2016-02-17 | 2020-02-26 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP2019040919A (ja) * | 2017-08-22 | 2019-03-14 | 株式会社ディスコ | 切削装置及び溝検出方法 |
US10403506B2 (en) | 2018-01-07 | 2019-09-03 | Infineon Technologies Ag | Separation of workpiece with three material removal stages |
JP7062449B2 (ja) * | 2018-01-23 | 2022-05-06 | 株式会社ディスコ | 被加工物の切削方法 |
JP7114169B2 (ja) | 2018-02-14 | 2022-08-08 | 株式会社ディスコ | 切削ブレードの整形方法 |
JP7106298B2 (ja) * | 2018-03-05 | 2022-07-26 | 株式会社ディスコ | チャックテーブル、切削装置、及び、切削装置のチャックテーブル修正方法 |
US10576585B1 (en) * | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
JP7382833B2 (ja) * | 2020-01-06 | 2023-11-17 | 株式会社ディスコ | 加工装置 |
KR102628421B1 (ko) * | 2020-12-18 | 2024-01-24 | 세메스 주식회사 | 반송 로봇의 정상 여부 판단 시스템, 반송 로봇의 정상 여부 판단 방법 및 기판 처리 장치 |
US20220230903A1 (en) * | 2021-01-18 | 2022-07-21 | Changxin Memory Technologies, Inc. | Tool and method for correcting position of wafer in semiconductor manufacturing machine |
TW202238803A (zh) * | 2021-02-26 | 2022-10-01 | 日商東京威力科創股份有限公司 | 搬運系統、搬運裝置及搬運方法 |
-
2020
- 2020-01-31 JP JP2020015006A patent/JP7418916B2/ja active Active
- 2020-12-24 KR KR1020200183194A patent/KR20210098322A/ko unknown
-
2021
- 2021-01-13 US US17/147,610 patent/US11658050B2/en active Active
- 2021-01-28 CN CN202110117482.9A patent/CN113276294A/zh active Pending
- 2021-01-28 TW TW110103207A patent/TW202131400A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20210242055A1 (en) | 2021-08-05 |
US11658050B2 (en) | 2023-05-23 |
CN113276294A (zh) | 2021-08-20 |
KR20210098322A (ko) | 2021-08-10 |
TW202131400A (zh) | 2021-08-16 |
JP7418916B2 (ja) | 2024-01-22 |
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