JP2021073706A - 基板処理装置 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 193
- 238000000034 method Methods 0.000 claims abstract description 51
- 239000012530 fluid Substances 0.000 claims abstract description 11
- 238000000576 coating method Methods 0.000 claims description 85
- 239000011248 coating agent Substances 0.000 claims description 80
- 238000010438 heat treatment Methods 0.000 claims description 80
- 238000004140 cleaning Methods 0.000 claims description 30
- 239000007788 liquid Substances 0.000 claims description 10
- 230000032258 transport Effects 0.000 description 35
- 239000000872 buffer Substances 0.000 description 24
- 238000001816 cooling Methods 0.000 description 15
- 238000001035 drying Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- G03F7/26—Processing photosensitive materials; Apparatus therefor
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- G03F7/26—Processing photosensitive materials; Apparatus therefor
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- G03F7/26—Processing photosensitive materials; Apparatus therefor
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- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67098—Apparatus for thermal treatment
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
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Abstract
Description
30 処理モジュール
40 インターフェイスモジュール
3500 塗布チャンバー
3600 現像チャンバー
3700 超臨界チャンバー
Claims (16)
- 基板を処理するための装置であって、前記装置は、
現像液を供給することによって前記基板に現像工程を遂行するように構成された現像チャンバーと、
超臨界流体を供給することによって前記基板を処理するように構成された超臨界チャンバーと、
前記現像チャンバーと前記超臨界チャンバーとの間に前記基板を搬送するように構成された搬送ユニットを有する搬送チャンバーと、
を備え、
前記現像チャンバーは、互いに重なるように垂直に積層された複数の現像チャンバーを含み、
垂直方向における前記超臨界チャンバーの寸法は、前記垂直方向における1つの現像チャンバーの寸法より大きく、且つ、前記垂直方向に互いの上に積層された2つの現像チャンバーの寸法に等しいか又はより小さい、装置。 - 前記装置は、前記搬送ユニットを制御するように構成された制御器を含み、
前記制御器は、その上に残留する現像液を有する基板を前記現像チャンバーから前記超臨界チャンバーに搬送するように前記搬送ユニットを制御する、請求項1に記載の装置。 - 前記現像チャンバーは、前記現像液を供給するように構成された現像ノズル、及び洗浄液を供給するように構成された洗浄ノズルを含み、
前記装置は、前記搬送ユニットを制御するように構成された制御器をさらに備え、
前記制御器は、その上に残留する現像液又は洗浄液を有する基板を前記現像チャンバーから前記超臨界チャンバーに搬送するように前記搬送ユニットを制御する、請求項1に記載の装置。 - 前記装置は、前記基板に熱処理工程を遂行するように構成された熱処理チャンバーをさらに備える、請求項2又は3に記載の装置。
- 基板を処理するための装置であって、前記装置は、
中に前記基板が収納される容器を含むインデックスモジュールと、
前記基板に工程を遂行するように構成された処理モジュールと、
外部の露光装置と前記処理モジュールを連結するように構成されたインターフェイスモジュールと、
を備え、
前記インデックスモジュール、前記処理モジュール、及び前記インターフェイスモジュールは、順次的に一列に配列され、
前記処理モジュールは、前記基板に前記工程を遂行するように構成された処理ブロックを含み、
前記処理ブロックは、
現像液を供給することによって前記基板に現像工程を遂行するように構成された現像チャンバーと、
塗布液を供給することによって前記基板上に塗布膜を形成するように構成された塗布チャンバーと、
前記基板に熱処理工程を遂行するように構成された熱処理チャンバーと、
超臨界流体を供給することによって前記基板を処理するように構成された超臨界チャンバーと、
前記現像チャンバー、前記塗布チャンバー、前記熱処理チャンバー、及び前記超臨界チャンバーの間に前記基板を搬送するように構成された搬送ユニットを有する搬送チャンバーと、
を含み、
前記塗布チャンバー及び前記現像チャンバーは、互いの上に垂直に積層され、
垂直方向における前記超臨界チャンバーの寸法は、前記垂直方向における前記塗布チャンバー又は前記現像チャンバーの寸法より大きく、且つ、前記垂直方向における前記塗布チャンバー及び前記現像チャンバーの寸法の合計に等しいか又はより小さい、装置。 - 前記装置は、前記搬送ユニットを制御するように構成された制御器をさらに備え、
前記制御器は、その上に残留する現像液を有する基板を前記現像チャンバーから前記超臨界チャンバーに搬送するように前記搬送ユニットを制御する、請求項5に記載の装置。 - 前記現像チャンバーは、前記現像液を供給するように構成された現像ノズル、及び洗浄液を供給するように構成された洗浄ノズルを含み、
前記装置は、前記搬送ユニットを制御するように構成された制御器をさらに備え、
前記制御器は、その上に残留する現像液又は洗浄液を有する基板を前記現像チャンバーから前記超臨界チャンバーに搬送するように前記搬送ユニットを制御する、請求項5に記載の装置。 - 前記塗布チャンバー及び前記現像チャンバーは、前記搬送チャンバーの一側に配置され、
前記熱処理チャンバーは、前記搬送チャンバーの反対側に配置される、請求項5に記載の装置。 - 前記超臨界チャンバーは、前記搬送チャンバーの一側及び反対側に配置される、請求項8に記載の基板処理装置。
- 前記処理ブロックは、互いに重なるように垂直に積層された複数の処理ブロックを含む、請求項9に記載の基板処理装置。
- 基板を処理するための装置であって、前記装置は、
中に前記基板が収納される容器を含むインデックスモジュールと、
前記基板に工程を遂行するように構成された処理モジュールと、
外部の露光装置と前記処理モジュールを連結するように構成されたインターフェイスモジュールと、
を備え、
前記インデックスモジュール、前記処理モジュール、及び前記インターフェイスモジュールは、順次的に一列に配列され、
前記処理モジュールは、
前記基板に塗布工程を遂行するように構成された塗布ブロックと、
前記基板に現像工程を遂行するように構成された現像ブロックと、
を含み、
前記塗布ブロックは、
塗布液を供給することによって前記基板上に塗布膜を形成するように構成された塗布チャンバーと、
前記基板に熱処理工程を遂行するように構成された第1熱処理チャンバーと、
前記塗布チャンバーと前記第1熱処理チャンバーとの間に前記基板を搬送するように構成された搬送ユニットを有する第1搬送チャンバーと、
を含み、
前記現像ブロックは、
現像液を供給することによって前記基板に現像工程を遂行するように構成された現像チャンバーと、
前記基板に熱処理工程を遂行するように構成された第2熱処理チャンバーと、
超臨界流体を供給することによって前記基板を処理するように構成された超臨界チャンバーと、
前記現像チャンバー、前記第2熱処理チャンバー、及び前記超臨界チャンバーの間に前記基板を搬送するように構成された搬送ユニットを有する第2搬送チャンバーと、
を含み、
前記現像チャンバーは、互いに重なるように垂直に積層された複数の現像チャンバーを含み、
垂直方向における前記超臨界チャンバーの寸法は、前記垂直方向における1つの現像チャンバーの寸法より大きく、且つ、前記垂直方向に互いの上に積層された2つの現像チャンバーの寸法に等しいか又はより小さい、装置。 - 前記装置は、前記第2搬送チャンバーの搬送ユニットを制御するように構成された制御器をさらに備え、
前記制御器は、前記現像チャンバー及び前記超臨界チャンバーに前記基板を順次的に搬送するように前記搬送ユニットを制御する、請求項11に記載の装置。 - 前記制御器は、その上に残留する現像液を有する基板を前記現像チャンバーから前記超臨界チャンバーに搬送するように前記搬送ユニットを制御する、請求項12に記載の装置。
- 前記現像チャンバーは、前記現像液を供給するように構成された現像ノズル、及び洗浄液を供給するように構成された洗浄ノズルを含み、
前記制御器は、その上に残留する現像液又は洗浄液を有する基板を前記現像チャンバーから前記超臨界チャンバーに搬送するように前記搬送ユニットを制御する、請求項12に記載の装置。 - 前記現像ブロック内の現像チャンバー及び第2熱処理チャンバーは、前記搬送チャンバーの一側に配置され、前記超臨界チャンバーは、前記一側及び前記搬送チャンバーの反対側に配置される、請求項11に記載の装置。
- 前記塗布ブロックは複数の塗布ブロックを含み、前記現像ブロックは複数の現像ブロックを含み、前記塗布ブロック及び前記現像ブロックは互いに重なるように垂直に積層される、請求項15に記載の装置。
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