JP2021070620A - 炭化珪素インゴットの製造方法、炭化珪素ウエハの製造方法及びその成長システム - Google Patents
炭化珪素インゴットの製造方法、炭化珪素ウエハの製造方法及びその成長システム Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 177
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 174
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000002994 raw material Substances 0.000 claims description 57
- 239000013078 crystal Substances 0.000 claims description 52
- 239000012298 atmosphere Substances 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 238000005498 polishing Methods 0.000 claims description 15
- 229910002804 graphite Inorganic materials 0.000 claims description 11
- 239000010439 graphite Substances 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 55
- 239000011810 insulating material Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 230000000704 physical effect Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 238000002017 high-resolution X-ray diffraction Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000012935 Averaging Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002964 rayon Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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Abstract
Description
本出願は、2019年10月29日に出願された大韓民国特許出願第10−2019−0135382号に基づく優先権の利益を有し、当該優先権の基礎出願の内容の全ては、本出願の内容として組み込まれる。
110 炭化珪素シード、シード
200 坩堝組立体
210 坩堝本体
220 坩堝蓋
230 シードホルダ
300 原料、原料物質
400 断熱材
420 反応チャンバ、石英管
500 加熱手段
Claims (9)
- 坩堝組立体を準備する準備ステップと、
前記坩堝組立体内に原料を装入し、炭化珪素シードを配置する原料装入ステップと、
前記炭化珪素シードから成長した炭化珪素インゴットを設ける成長ステップとを含み、
前記坩堝組立体は、内部空間を有する坩堝本体を含み、
前記坩堝本体は、1.70〜1.92g/cm3の範囲の密度を有し、
前記原料装入ステップにおいて、前記原料は、前記炭化珪素シードと一定の間隔を有するように配置され、
前記成長ステップにおいて、前記原料は、結晶成長雰囲気に調節された前記内部空間で蒸気移送されて前記炭化珪素シード上に蒸着される、炭化珪素インゴットの製造方法。 - 前記炭化珪素インゴットは、0〜10mmの中央部と縁部との間の高さ偏差を有する、請求項1に記載の炭化珪素インゴットの製造方法。
- 前記坩堝本体は2.9Ω以上の電気抵抗を有する、請求項1に記載の炭化珪素インゴットの製造方法。
- 坩堝組立体を準備する準備ステップと、
前記坩堝組立体内に原料を装入し、炭化珪素シードを配置する原料装入ステップと、
前記炭化珪素シードから成長した炭化珪素インゴットを設ける成長ステップと、
前記炭化珪素インゴットから炭化珪素ウエハを形成するウエハ形成ステップとを含み、
前記坩堝組立体は、内部空間を有する坩堝本体を含み、
前記坩堝本体は、1.70〜1.92g/cm3の範囲の密度を有し、
前記原料装入ステップにおいて、前記原料は、前記炭化珪素シードと一定の間隔を有するように配置され、
前記成長ステップにおいて、前記原料は、結晶成長雰囲気に調節された前記内部空間で蒸気移送されて前記炭化珪素シード上に蒸着される、炭化珪素ウエハの製造方法。 - 前記ウエハ形成ステップは、
前記炭化珪素インゴットをスライスし、スライスされた結晶を設けるスライシングステップと、
前記スライスされた結晶を研磨して炭化珪素ウエハを形成する研磨ステップとを含み、
前記スライスされた結晶は、0〜15°から選択されたいずれか一つの角度のオフアングルを有するものであり、
前記炭化珪素ウエハは4インチ以上である、請求項4に記載の炭化珪素ウエハの製造方法。 - 前記炭化珪素ウエハは、基準角度に対し−1.0〜+1.0°のロッキング角度を有する、請求項4に記載の炭化珪素ウエハの製造方法。
- 反応容器及び加熱手段を含んで炭化珪素インゴットを成長させるシステムであって、
前記反応容器内には、内部空間を有する坩堝本体を含む坩堝組立体が配置され、前記坩堝組立体内には原料が装入され、炭化珪素シードを前記原料と一定の間隔を置いて配置されるようにし、
前記加熱手段は、前記内部空間を結晶成長雰囲気となるように誘導して、前記原料が前記炭化珪素シードに蒸気移送されて蒸着され、前記炭化珪素シードから成長した炭化珪素インゴットが設けられるように結晶成長雰囲気を造成するものであり、
前記坩堝本体は、1.70〜1.92g/cm3の範囲の密度を有する、炭化珪素インゴットの成長システム。 - 前記坩堝本体は、直径が110mm以上であるグラファイト坩堝本体である、請求項7に記載の炭化珪素インゴットの成長システム。
- 前記坩堝本体は、2.9Ω以上の電気抵抗を有する、請求項7に記載の炭化珪素インゴットの成長システム。
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