JP2021027324A5 - - Google Patents
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- JP2021027324A5 JP2021027324A5 JP2020079137A JP2020079137A JP2021027324A5 JP 2021027324 A5 JP2021027324 A5 JP 2021027324A5 JP 2020079137 A JP2020079137 A JP 2020079137A JP 2020079137 A JP2020079137 A JP 2020079137A JP 2021027324 A5 JP2021027324 A5 JP 2021027324A5
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- JP
- Japan
- Prior art keywords
- layer
- composition ratio
- electron block
- light emitting
- emitting device
- Prior art date
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- 239000010410 layer Substances 0.000 claims description 48
- 230000004888 barrier function Effects 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000000903 blocking effect Effects 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- 229910002704 AlGaN Inorganic materials 0.000 claims description 3
- 238000005253 cladding Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020079137A JP7141425B2 (ja) | 2020-04-28 | 2020-04-28 | 窒化物半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020079137A JP7141425B2 (ja) | 2020-04-28 | 2020-04-28 | 窒化物半導体発光素子 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019144676A Division JP6698925B1 (ja) | 2019-08-06 | 2019-08-06 | 窒化物半導体発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021027324A JP2021027324A (ja) | 2021-02-22 |
| JP2021027324A5 true JP2021027324A5 (enrdf_load_stackoverflow) | 2021-12-23 |
| JP7141425B2 JP7141425B2 (ja) | 2022-09-22 |
Family
ID=74664934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020079137A Active JP7141425B2 (ja) | 2020-04-28 | 2020-04-28 | 窒化物半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP7141425B2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7642553B2 (ja) * | 2019-11-08 | 2025-03-10 | ヌヴォトンテクノロジージャパン株式会社 | 半導体発光素子、及び半導体発光素子の製造方法 |
| JP7714412B2 (ja) * | 2021-09-08 | 2025-07-29 | 日亜化学工業株式会社 | 発光素子 |
| JP7291357B1 (ja) * | 2022-02-24 | 2023-06-15 | 国立研究開発法人理化学研究所 | 紫外発光素子およびそれを備える電気機器 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011187591A (ja) | 2010-03-08 | 2011-09-22 | Uv Craftory Co Ltd | 窒化物半導体紫外線発光素子 |
| US9252329B2 (en) | 2011-10-04 | 2016-02-02 | Palo Alto Research Center Incorporated | Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction |
| CN103915534B (zh) | 2012-12-31 | 2017-08-22 | 比亚迪股份有限公司 | 一种led外延片及其形成方法 |
| KR20160033815A (ko) | 2014-09-18 | 2016-03-29 | 삼성전자주식회사 | 반도체 발광소자 |
| JP6084196B2 (ja) | 2014-12-08 | 2017-02-22 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｉｉ族窒化物半導体発光素子の製造方法およびｉｉｉ族窒化物半導体発光素子 |
| JP5953447B1 (ja) | 2015-02-05 | 2016-07-20 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｉｉ族窒化物半導体発光素子およびその製造方法 |
| JP2016171127A (ja) | 2015-03-11 | 2016-09-23 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｉｉ族窒化物半導体発光素子およびその製造方法 |
| JP6194138B2 (ja) | 2015-07-21 | 2017-09-06 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
| WO2017049053A1 (en) | 2015-09-17 | 2017-03-23 | Crystal Is, Inc. | Ultraviolet light-emitting devices incorporating two-dimensional hole gases |
| DE112016004375T5 (de) | 2015-09-28 | 2018-06-21 | Nichia Corporation | Lichtemittierendes nitrid-halbleiter-element |
| JP6431013B2 (ja) | 2016-09-21 | 2018-11-28 | シャープ株式会社 | 窒化アルミニウム系半導体深紫外発光素子 |
| JP6456414B2 (ja) | 2017-02-01 | 2019-01-23 | 日機装株式会社 | 半導体発光素子 |
| KR102491456B1 (ko) | 2017-03-27 | 2023-01-25 | 도와 일렉트로닉스 가부시키가이샤 | Iii족 질화물 반도체 발광소자 및 그 제조 방법 |
| US20190103509A1 (en) | 2017-09-30 | 2019-04-04 | Sensor Electronic Technology, Inc. | Semiconductor Heterostructure with P-type Superlattice |
| KR102682565B1 (ko) | 2018-11-05 | 2024-07-08 | 도와 일렉트로닉스 가부시키가이샤 | Iii족 질화물 반도체 발광소자 및 그 제조 방법 |
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2020
- 2020-04-28 JP JP2020079137A patent/JP7141425B2/ja active Active