JP2004343147A5 - - Google Patents

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Publication number
JP2004343147A5
JP2004343147A5 JP2004242880A JP2004242880A JP2004343147A5 JP 2004343147 A5 JP2004343147 A5 JP 2004343147A5 JP 2004242880 A JP2004242880 A JP 2004242880A JP 2004242880 A JP2004242880 A JP 2004242880A JP 2004343147 A5 JP2004343147 A5 JP 2004343147A5
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JP
Japan
Prior art keywords
nitride semiconductor
semiconductor layer
layer
semiconductor device
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004242880A
Other languages
English (en)
Japanese (ja)
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JP2004343147A (ja
JP4356555B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2004242880A priority Critical patent/JP4356555B2/ja
Priority claimed from JP2004242880A external-priority patent/JP4356555B2/ja
Publication of JP2004343147A publication Critical patent/JP2004343147A/ja
Publication of JP2004343147A5 publication Critical patent/JP2004343147A5/ja
Application granted granted Critical
Publication of JP4356555B2 publication Critical patent/JP4356555B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2004242880A 1998-03-12 2004-08-23 窒化物半導体素子 Expired - Lifetime JP4356555B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004242880A JP4356555B2 (ja) 1998-03-12 2004-08-23 窒化物半導体素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6023398 1998-03-12
JP2004242880A JP4356555B2 (ja) 1998-03-12 2004-08-23 窒化物半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP6258999A Division JP3622562B2 (ja) 1998-03-12 1999-03-10 窒化物半導体発光ダイオード

Publications (3)

Publication Number Publication Date
JP2004343147A JP2004343147A (ja) 2004-12-02
JP2004343147A5 true JP2004343147A5 (enrdf_load_stackoverflow) 2006-04-20
JP4356555B2 JP4356555B2 (ja) 2009-11-04

Family

ID=33542750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004242880A Expired - Lifetime JP4356555B2 (ja) 1998-03-12 2004-08-23 窒化物半導体素子

Country Status (1)

Country Link
JP (1) JP4356555B2 (enrdf_load_stackoverflow)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3839799B2 (ja) 2003-08-06 2006-11-01 ローム株式会社 半導体発光素子
JP2007214384A (ja) 2006-02-09 2007-08-23 Rohm Co Ltd 窒化物半導体素子
JP5068020B2 (ja) * 2006-02-20 2012-11-07 シャープ株式会社 窒化物半導体発光素子の製造方法
KR101239851B1 (ko) * 2006-03-24 2013-03-06 서울옵토디바이스주식회사 질화갈륨계 화합물 반도체 및 그 제조방법
KR100835116B1 (ko) * 2007-04-16 2008-06-05 삼성전기주식회사 질화물 반도체 발광 소자
RU2369942C1 (ru) 2008-02-21 2009-10-10 Самсунг Электро-Меканикс Ко., Лтд. Светоизлучающий прибор на основе нитридного полупроводника
JP4640427B2 (ja) 2008-03-14 2011-03-02 ソニー株式会社 ＧａＮ系半導体発光素子、発光素子組立体、発光装置、ＧａＮ系半導体発光素子の製造方法、ＧａＮ系半導体発光素子の駆動方法、及び、画像表示装置
JP4655103B2 (ja) 2008-04-14 2011-03-23 ソニー株式会社 ＧａＮ系半導体発光素子、発光素子組立体、発光装置、ＧａＮ系半導体発光素子の駆動方法、及び、画像表示装置
JP4940317B2 (ja) 2010-02-25 2012-05-30 株式会社東芝 半導体発光素子及びその製造方法
KR101140679B1 (ko) 2010-06-08 2012-04-25 서울옵토디바이스주식회사 질화갈륨계 화합물 반도체
JP5613719B2 (ja) * 2010-08-26 2014-10-29 株式会社東芝 半導体発光素子
KR20130079873A (ko) * 2012-01-03 2013-07-11 엘지이노텍 주식회사 발광소자 및 이를 포함하는 조명시스템
JP2014049595A (ja) * 2012-08-31 2014-03-17 Ushio Inc 窒化物半導体素子
WO2014178248A1 (ja) 2013-04-30 2014-11-06 シャープ株式会社 窒化物半導体発光素子

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