JP2021013010A - 積層セラミックキャパシタ - Google Patents
積層セラミックキャパシタ Download PDFInfo
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- JP2021013010A JP2021013010A JP2020040248A JP2020040248A JP2021013010A JP 2021013010 A JP2021013010 A JP 2021013010A JP 2020040248 A JP2020040248 A JP 2020040248A JP 2020040248 A JP2020040248 A JP 2020040248A JP 2021013010 A JP2021013010 A JP 2021013010A
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- Prior art keywords
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- via hole
- ceramic capacitor
- multilayer ceramic
- distance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 43
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 45
- 238000007747 plating Methods 0.000 claims description 35
- 229910052759 nickel Inorganic materials 0.000 claims description 19
- 238000010304 firing Methods 0.000 claims description 15
- 230000015556 catabolic process Effects 0.000 abstract description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 26
- 238000000034 method Methods 0.000 description 17
- 239000003990 capacitor Substances 0.000 description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 239000000919 ceramic Substances 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 9
- 229910052763 palladium Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 239000011575 calcium Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 3
- 229910002113 barium titanate Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910004762 CaSiO Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
- H01G4/2325—Terminals electrically connecting two or more layers of a stacked or rolled capacitor characterised by the material of the terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/02—Mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/252—Terminals the terminals being coated on the capacitive element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
Abstract
Description
210 本体
211、411 誘電体層
212、213 カバー部
250 識別部
221、222、421、422 内部電極
231、232、233、234、431、432、433、434 連結電極
241、242、243、244 外部電極
241a、242a、243a、244a 焼成電極
241b、242b、243b、244b 第1めっき層
241c、242c、243c、244c 第2めっき層
Claims (13)
- 誘電体層、及び前記誘電体層を間に挟んで配置され、互いに点対称をなす第1及び第2内部電極を含む本体と、
前記誘電体層と直交する方向に本体を貫通して前記第1内部電極と連結される第1及び第2連結電極と、
前記誘電体層と直交する方向に本体を貫通して前記第2内部電極と連結される第3及び第4連結電極と、
前記本体の両面に配置され、前記第1及び第2連結電極と連結される第1及び第2外部電極と、
前記第1及び第2外部電極と離隔し、前記第3及び第4連結電極と連結される第3及び第4外部電極と、を含み、
前記第1内部電極は第3及び第4ビアホールを含み、第2内部電極は第1及び第2ビアホールを含む、積層セラミックキャパシタ。 - 前記第1及び第2連結電極は、第2内部電極の第1及び第2ビアホールを貫通し、
前記第3及び第4連結電極は、第1内部電極の第3及び第4ビアホールを貫通する、請求項1に記載の積層セラミックキャパシタ。 - 前記第1及び第2内部電極は長方形の形状である、請求項1または2に記載の積層セラミックキャパシタ。
- 前記第1ビアホールと第3ビアホールの間隔または第2ビアホールと第4ビアホールの間隔D3に対する第1及び第2連結電極の間隔または第3及び第4連結電極の間隔D1の割合(D1/D3)は1.9以上である、請求項1から3のいずれか一項に記載の積層セラミックキャパシタ。
- 前記第1ビアホールと第3ビアホールの間隔または第2ビアホールと第4ビアホールの間隔D3に対する第1及び第2連結電極の間隔または第3及び第4連結電極の間隔D1の割合(D1/D3)は5.0以下である、請求項1から3のいずれか一項に記載の積層セラミックキャパシタ。
- 前記第1ビアホールと第3ビアホールの間隔または第2ビアホールと第4ビアホールの間隔D3に対する第1〜第4連結電極のいずれかの直径D2の割合(D2/D3)は0.35以上である、請求項1から5のいずれか一項に記載の積層セラミックキャパシタ。
- 前記第1ビアホールと第3ビアホールの間隔または第2ビアホールと第4ビアホールの間隔D3に対する第1〜第4連結電極のいずれかの直径D2の割合(D2/D3)は0.6以下である、請求項1から5のいずれか一項に記載の積層セラミックキャパシタ。
- 前記第1及び第2内部電極はニッケルを含む、請求項1から7のいずれか一項に記載の積層セラミックキャパシタ。
- 前記第1〜第4外部電極はニッケルを含む焼成電極である、請求項1から8のいずれか一項に記載の積層セラミックキャパシタ。
- 前記第1〜第4外部電極は中心線平均粗さ(Ra)が1nm〜100nmの範囲内である、請求項1から9のいずれか一項に記載の積層セラミックキャパシタ。
- 前記第1〜第4外部電極は焼成電極上に順に積層された第1めっき層及び第2めっき層を含む、請求項1から10のいずれか一項に記載の積層セラミックキャパシタ。
- 前記第1〜第4外部電極の厚さは1μm〜10μmの範囲内である、請求項1から11のいずれか一項に記載の積層セラミックキャパシタ。
- 前記本体は厚さが100μm以下である、請求項1から12のいずれか一項に記載の積層セラミックキャパシタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190081138A KR102620521B1 (ko) | 2019-07-05 | 2019-07-05 | 적층 세라믹 커패시터 |
KR10-2019-0081138 | 2019-07-05 |
Publications (2)
Publication Number | Publication Date |
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JP2021013010A true JP2021013010A (ja) | 2021-02-04 |
JP7379790B2 JP7379790B2 (ja) | 2023-11-15 |
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JP2020040248A Active JP7379790B2 (ja) | 2019-07-05 | 2020-03-09 | 積層セラミックキャパシタ |
Country Status (3)
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US (2) | US11282648B2 (ja) |
JP (1) | JP7379790B2 (ja) |
KR (1) | KR102620521B1 (ja) |
Families Citing this family (2)
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KR20190116122A (ko) * | 2019-07-04 | 2019-10-14 | 삼성전기주식회사 | 적층 세라믹 커패시터 |
KR102333086B1 (ko) * | 2019-08-19 | 2021-12-01 | 삼성전기주식회사 | 적층 세라믹 커패시터 |
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JP3363651B2 (ja) * | 1994-04-21 | 2003-01-08 | キヤノン株式会社 | プリント配線板およびその設計方法 |
JPH0817675A (ja) | 1994-06-24 | 1996-01-19 | Kyocera Corp | チップ型積層セラミックコンデンサ |
KR100483944B1 (ko) * | 2000-04-14 | 2005-04-15 | 마쯔시다덴기산교 가부시키가이샤 | 적층체, 콘덴서, 전자부품 및 이들의 제조 방법과 제조 장치 |
JP2004095685A (ja) | 2002-08-29 | 2004-03-25 | Kyocera Corp | 積層コンデンサ及びその製造方法 |
ATE355597T1 (de) * | 2003-12-05 | 2006-03-15 | Ngk Spark Plug Co | Kondensator und verfahren zu seiner herstellung |
JP2010123613A (ja) | 2008-11-17 | 2010-06-03 | Murata Mfg Co Ltd | セラミック電子部品及びセラミック電子部品の実装構造 |
JP5589891B2 (ja) | 2010-05-27 | 2014-09-17 | 株式会社村田製作所 | セラミック電子部品及びその製造方法 |
KR20130037485A (ko) | 2011-10-06 | 2013-04-16 | 삼성전기주식회사 | 적층 세라믹 커패시터 및 이의 제조방법 |
KR101376839B1 (ko) * | 2012-10-12 | 2014-03-20 | 삼성전기주식회사 | 적층 세라믹 커패시터 |
KR101497192B1 (ko) | 2012-12-27 | 2015-02-27 | 삼성전기주식회사 | 전자부품 내장 인쇄회로기판 및 그 제조방법 |
JP5838978B2 (ja) * | 2013-01-24 | 2016-01-06 | 株式会社村田製作所 | セラミック積層部品 |
JP6263849B2 (ja) | 2013-03-25 | 2018-01-24 | 株式会社村田製作所 | 積層セラミックコンデンサ |
KR101862422B1 (ko) | 2013-06-14 | 2018-05-29 | 삼성전기주식회사 | 적층 세라믹 커패시터 및 그 실장 기판 |
KR101548813B1 (ko) * | 2013-11-06 | 2015-08-31 | 삼성전기주식회사 | 적층 세라믹 커패시터 |
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KR101867982B1 (ko) | 2016-07-20 | 2018-06-18 | 삼성전기주식회사 | 커패시터 및 그 실장 기판 |
KR102620535B1 (ko) * | 2016-09-06 | 2024-01-03 | 삼성전기주식회사 | 적층형 커패시터 및 그 실장 기판 |
KR20180047888A (ko) | 2016-11-01 | 2018-05-10 | 삼성전기주식회사 | 적층 전자부품 |
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KR20190116122A (ko) | 2019-07-04 | 2019-10-14 | 삼성전기주식회사 | 적층 세라믹 커패시터 |
CN112185702B (zh) | 2019-07-04 | 2023-11-17 | 三星电机株式会社 | 多层陶瓷电容器 |
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2019
- 2019-07-05 KR KR1020190081138A patent/KR102620521B1/ko active IP Right Grant
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2020
- 2020-03-04 US US16/808,674 patent/US11282648B2/en active Active
- 2020-03-09 JP JP2020040248A patent/JP7379790B2/ja active Active
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US11735371B2 (en) | 2023-08-22 |
JP7379790B2 (ja) | 2023-11-15 |
KR20190116125A (ko) | 2019-10-14 |
US20210005389A1 (en) | 2021-01-07 |
KR102620521B1 (ko) | 2024-01-03 |
US20220165504A1 (en) | 2022-05-26 |
US11282648B2 (en) | 2022-03-22 |
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