JP2021002517A - 厚膜アルミ電極ペースト組成物、及びその金属メッキ予処理によって作製されるチップ抵抗器 - Google Patents
厚膜アルミ電極ペースト組成物、及びその金属メッキ予処理によって作製されるチップ抵抗器 Download PDFInfo
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/14—Silica-free oxide glass compositions containing boron
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/14—Silica-free oxide glass compositions containing boron
- C03C3/142—Silica-free oxide glass compositions containing boron containing lead
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- C—CHEMISTRY; METALLURGY
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- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/16—Silica-free oxide glass compositions containing phosphorus
- C03C3/19—Silica-free oxide glass compositions containing phosphorus containing boron
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- C—CHEMISTRY; METALLURGY
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/14—Compositions for glass with special properties for electro-conductive glass
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/08—Frit compositions, i.e. in a powdered or comminuted form containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/18—Conductive material dispersed in non-conductive inorganic material the conductive material comprising carbon-silicon compounds, carbon or silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/142—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/006—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
- H01C17/281—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thick film techniques
- H01C17/283—Precursor compositions therefor, e.g. pastes, inks, glass frits
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2204/00—Glasses, glazes or enamels with special properties
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2209/00—Compositions specially applicable for the manufacture of vitreous glazes
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- Spectroscopy & Molecular Physics (AREA)
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Abstract
Description
21 適度反表面被覆
22 過度反表面被覆
31、41、42、51、61 Bi2O3-ZnO-B2O3ガラス
32、43、44、52、62 RO-ZnO-B2O3ガラス
71 アルミナセラミック基板
72a 高温アルミ電極
72b 低温アルミ電極
73 ニッケルメッキ
74 すずメッキ
81 アルミ端電極
82 ニッケルメッキ
83 すずメッキ
91 銀
92 アルミ
Claims (5)
- アルミナセラミック基板において、チップ抵抗器電極端子を形成するための導電アルミニウムペースト組成物であって、
RO-ZnO-B2O3ガラスと、金属酸化物MO、カーボンブラック或いはグラフェン、金属銀玉、金属アルミ玉、及び有機添加剤が含まれ、当該RO-ZnO-B2O3ガラスと当該金属酸化物MO、当該カーボンブラック或いはグラフェン、当該金属銀玉、当該金属アルミ玉、及び当該有機添加剤の総重量として、当該RO-ZnO-B2O3ガラスの含量が3〜30wt%で、当該金属酸化物MOの含量が0.1〜20wt%で、当該カーボンブラック或いはグラフェンの含量が0.1〜20wt%で、当該金属銀玉の含量が0.1〜20wt%で、当該金属アルミ玉の含量が40〜80wt%で、当該有機添加剤の含量が10〜20wt%であり、当該RO-ZnO-B2O3ガラスが、V2O5-ZnO-B2O3ガラス或いはBaO-ZnO-B2O3ガラスである、ことを特徴とする厚膜アルミ電極ペースト組成物。 - 当該金屬気化物MOは、シリカ(SiO2)や二酸化マンガン(MnO2)、酸化銅(CuO)、酸化クロム(Cr2O3)、ジルコニア(ZrO2)、アルミナ(Al2O3)、酸化ホウ素(B2O3)、酸化亜鉛(ZnO)、及び酸化リチウム(Li2O)で、当該シリカや当該二酸化マンガン、当該酸化銅、当該酸化クロム、当該ジルコニア、当該アルミナ、当該酸化ホウ素、当該酸化亜鉛、及び当該酸化リチウムの総重量として、当該シリカの含量が1〜15wt%で、当該二酸化マンガンの含量が1〜15wt%で、当該酸化銅の含量が1〜15wt%で、当該酸化クロムの含量が1〜15wt%で、当該ジルコニアの含量が1〜15wt%で、当該アルミナの含量が1〜5wt%で、当該酸化ホウ素の含量が25〜30wt%で、当該酸化亜鉛の含量が25〜30wt%で、及び当該酸化リチウムの含量が1〜5wt%である、ことを特徴とする請求項1に記載される厚膜アルミ電極ペースト組成物。
- 当該金屬銀玉及び、当該カーボンブラック或いはグラフェンは、導電導熱添加剤である、ことを特徴とする請求項1に記載される厚膜アルミ電極ペースト組成物。
- 当該厚膜アルミ電極ペースト組成物をアルミナセラミック基板に塗布して、乾燥及び焼結することにより、厚膜アルミ電極を形成することは、当該厚膜アルミ電極に対して、後続の金属メッキを行う前の予処理であり、当該予処理が、反表面被覆で、当該厚膜アルミ電極の表面凹凸やアルミナ不導電質を除去して、当該厚膜アルミ電極に、表面粗度や低酸素含量を持たせ、これにより、当該厚膜アルミ電極のチップ抵抗器の特性が、厚膜印刷の銀電極と還元雰囲気において焼結された厚膜印刷銅電極のチップ抵抗器の特性に相当させる、ことを特徴とする請求項1に記載される厚膜アルミ電極ペースト組成物。
- 当該厚膜アルミ電極ペースト組成物は、先ず、アルミの融点より高い温度で、当該アルミナセラミック基板に、高温焼結アルミ層を形成し、更に、アルミの融点より低い温度で、当該高温焼結アルミ層に、低温焼結アルミ層を形成する、ことを特徴とする請求項4に記載される厚膜アルミ電極ペースト組成物。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW107121738 | 2018-06-25 | ||
TW108120268 | 2019-06-12 | ||
TW108120268A TW202000618A (zh) | 2018-06-25 | 2019-06-12 | 厚膜鋁電極膏組成物、及其電鍍金屬前處理製作之晶片電阻器 |
JP2019113591 | 2019-06-19 | ||
JP2019113591A JP2020004962A (ja) | 2018-06-25 | 2019-06-19 | 厚膜アルミ電極ペースト組成物と、その金属メッキの前処理によって作製されるチップ抵抗器 |
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JP2021002517A true JP2021002517A (ja) | 2021-01-07 |
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JP2019113591A Pending JP2020004962A (ja) | 2018-06-25 | 2019-06-19 | 厚膜アルミ電極ペースト組成物と、その金属メッキの前処理によって作製されるチップ抵抗器 |
JP2020101819A Pending JP2021002517A (ja) | 2018-06-25 | 2020-06-11 | 厚膜アルミ電極ペースト組成物、及びその金属メッキ予処理によって作製されるチップ抵抗器 |
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JP2019113591A Pending JP2020004962A (ja) | 2018-06-25 | 2019-06-19 | 厚膜アルミ電極ペースト組成物と、その金属メッキの前処理によって作製されるチップ抵抗器 |
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US (1) | US20190392968A1 (ja) |
JP (2) | JP2020004962A (ja) |
CN (1) | CN112086219A (ja) |
TW (2) | TW202000618A (ja) |
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WO2022246589A1 (zh) * | 2021-05-24 | 2022-12-01 | 成电智慧材料股份有限公司 | 高导电率导线、合金与新形状端电极制作方法 |
CN113782251A (zh) * | 2021-09-09 | 2021-12-10 | 南京汇聚新材料科技有限公司 | 一种电极膏体和电极厚膜及其制备方法 |
-
2019
- 2019-06-12 US US16/438,636 patent/US20190392968A1/en not_active Abandoned
- 2019-06-12 TW TW108120268A patent/TW202000618A/zh unknown
- 2019-06-19 JP JP2019113591A patent/JP2020004962A/ja active Pending
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2020
- 2020-06-10 CN CN202010524111.8A patent/CN112086219A/zh not_active Withdrawn
- 2020-06-10 TW TW109119473A patent/TW202045633A/zh unknown
- 2020-06-11 JP JP2020101819A patent/JP2021002517A/ja active Pending
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Publication number | Publication date |
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TW202000618A (zh) | 2020-01-01 |
JP2020004962A (ja) | 2020-01-09 |
CN112086219A (zh) | 2020-12-15 |
TW202045633A (zh) | 2020-12-16 |
US20190392968A1 (en) | 2019-12-26 |
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