JP2020535404A - 統合型放射線検出器デバイス - Google Patents
統合型放射線検出器デバイス Download PDFInfo
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- JP2020535404A JP2020535404A JP2020516817A JP2020516817A JP2020535404A JP 2020535404 A JP2020535404 A JP 2020535404A JP 2020516817 A JP2020516817 A JP 2020516817A JP 2020516817 A JP2020516817 A JP 2020516817A JP 2020535404 A JP2020535404 A JP 2020535404A
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- 230000005855 radiation Effects 0.000 title claims description 17
- 239000000463 material Substances 0.000 claims abstract description 26
- 230000001681 protective effect Effects 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 14
- 230000005251 gamma ray Effects 0.000 claims abstract description 4
- 238000003384 imaging method Methods 0.000 claims abstract description 4
- 230000000903 blocking effect Effects 0.000 claims description 8
- 238000000465 moulding Methods 0.000 claims description 5
- 239000012779 reinforcing material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 description 30
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 230000005670 electromagnetic radiation Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000003351 stiffener Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14661—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20182—Modular detectors, e.g. tiled scintillators or tiled photodiodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20184—Detector read-out circuitry, e.g. for clearing of traps, compensating for traps or compensating for direct hits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Molecular Biology (AREA)
- High Energy & Nuclear Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (12)
- デバイスであって、
X線またはガンマ線の光子を可視光の光子に変換するように構成されたシンチレータ層と、
前記シンチレータ層によって生成された可視光を電流に変換するように構成されたフォトダイオード層と、
前記フォトダイオード層の下に位置し、電流を受け取って処理するように構成されたIC(集積回路)層と、
を備え、
前記IC層の電気接点は、ワイヤボンディングを使用して前記フォトダイオード層の電気接点に接続され、
前記IC層の底部が少なくとも部分的に露出されたままである間、前記ワイヤボンディングは保護材料で覆われている、デバイス。 - 前記デバイスは、前記IC層の下にヒートシンクをさらに備える、請求項1に記載のデバイス。
- 前記IC層の底面は、ヒートシンクと直接接触している、請求項1または2に記載のデバイス。
- ヒートシンクは、補強材としてさらに構成される、請求項1〜3のいずれか1項に記載の、デバイス。
- 前記デバイスは、前記フォトダイオード層と前記IC層との間にX線遮断層をさらに備える、請求項1〜4のいずれか1項に記載のデバイス。
- 前記IC層の電気接点は、前記フォトダイオード層の電気接点に直接接続される、請求項1〜5のいずれか1項に記載のデバイス。
- 前記フォトダイオード層は、再分配層をさらに含む、請求項1〜6のいずれか1項に記載のデバイス。
- 前記ワイヤボンディングは、フィルム支援成形を使用して覆われる、請求項1〜7のいずれか1項に記載のデバイス。
- 前記IC層は、積み重ねられたICチップの複数の層を含む、請求項1〜8のいずれか1項に記載のデバイス。
- 前記デバイスはタイルを含む、請求項1〜9のいずれか1項に記載のデバイス。
- 請求項1〜10のいずれか1項に記載のタイルのアレイを含む検出器。
- 高エネルギー放射線源と、
請求項1〜11のいずれか1項に記載の検出器と、
を含む、イメージングシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP17193925.9 | 2017-09-29 | ||
EP17193925.9A EP3462494B1 (en) | 2017-09-29 | 2017-09-29 | Integrated radiation detector device |
PCT/EP2018/075774 WO2019063473A1 (en) | 2017-09-29 | 2018-09-24 | INTEGRATED RADIATION DETECTOR DEVICE |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2020535404A true JP2020535404A (ja) | 2020-12-03 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020516817A Pending JP2020535404A (ja) | 2017-09-29 | 2018-09-24 | 統合型放射線検出器デバイス |
Country Status (5)
Country | Link |
---|---|
US (1) | US11362132B2 (ja) |
EP (1) | EP3462494B1 (ja) |
JP (1) | JP2020535404A (ja) |
CN (1) | CN111149208A (ja) |
WO (1) | WO2019063473A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113933324B (zh) * | 2020-06-29 | 2023-07-14 | 京东方科技集团股份有限公司 | 平板探测器及其制造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09306941A (ja) * | 1996-05-20 | 1997-11-28 | Hitachi Ltd | 半導体装置及びその製造方法並びにその実装方法 |
JP2004215911A (ja) * | 2003-01-15 | 2004-08-05 | Hitachi Medical Corp | X線検出器及びそれを用いたx線装置 |
JP2006202791A (ja) * | 2005-01-18 | 2006-08-03 | Hitachi Medical Corp | Icパッケージ及びそれを用いたx線ct装置 |
JP2009532676A (ja) * | 2006-03-30 | 2009-09-10 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 放射線検出器配列 |
JP2012044016A (ja) * | 2010-08-20 | 2012-03-01 | Renesas Electronics Corp | 半導体装置及び半導体装置の製造方法 |
JP2016505222A (ja) * | 2013-02-01 | 2016-02-18 | インヴェンサス・コーポレイション | ワイヤボンドビアを有するマイクロ電子パッケージ、その製造方法、およびそのための補強層 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5464984A (en) * | 1985-12-11 | 1995-11-07 | General Imaging Corporation | X-ray imaging system and solid state detector therefor |
JP4237966B2 (ja) | 2002-03-08 | 2009-03-11 | 浜松ホトニクス株式会社 | 検出器 |
IT1402806B1 (it) * | 2010-11-29 | 2013-09-18 | St Microelectronics Srl | Dispositivo fotomoltiplicatore incapsulato di materiale semiconduttore, in particolare per l'utilizzo in macchine per l'esecuzione della tomografia ad emissione di positroni. |
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2017
- 2017-09-29 EP EP17193925.9A patent/EP3462494B1/en active Active
-
2018
- 2018-09-24 JP JP2020516817A patent/JP2020535404A/ja active Pending
- 2018-09-24 WO PCT/EP2018/075774 patent/WO2019063473A1/en active Application Filing
- 2018-09-24 US US16/649,481 patent/US11362132B2/en active Active
- 2018-09-24 CN CN201880062802.1A patent/CN111149208A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09306941A (ja) * | 1996-05-20 | 1997-11-28 | Hitachi Ltd | 半導体装置及びその製造方法並びにその実装方法 |
JP2004215911A (ja) * | 2003-01-15 | 2004-08-05 | Hitachi Medical Corp | X線検出器及びそれを用いたx線装置 |
JP2006202791A (ja) * | 2005-01-18 | 2006-08-03 | Hitachi Medical Corp | Icパッケージ及びそれを用いたx線ct装置 |
JP2009532676A (ja) * | 2006-03-30 | 2009-09-10 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 放射線検出器配列 |
JP2012044016A (ja) * | 2010-08-20 | 2012-03-01 | Renesas Electronics Corp | 半導体装置及び半導体装置の製造方法 |
JP2016505222A (ja) * | 2013-02-01 | 2016-02-18 | インヴェンサス・コーポレイション | ワイヤボンドビアを有するマイクロ電子パッケージ、その製造方法、およびそのための補強層 |
Also Published As
Publication number | Publication date |
---|---|
WO2019063473A1 (en) | 2019-04-04 |
CN111149208A (zh) | 2020-05-12 |
EP3462494A1 (en) | 2019-04-03 |
EP3462494B1 (en) | 2021-03-24 |
US11362132B2 (en) | 2022-06-14 |
US20210384249A1 (en) | 2021-12-09 |
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