JP2006202791A - Icパッケージ及びそれを用いたx線ct装置 - Google Patents
Icパッケージ及びそれを用いたx線ct装置 Download PDFInfo
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- JP2006202791A JP2006202791A JP2005009728A JP2005009728A JP2006202791A JP 2006202791 A JP2006202791 A JP 2006202791A JP 2005009728 A JP2005009728 A JP 2005009728A JP 2005009728 A JP2005009728 A JP 2005009728A JP 2006202791 A JP2006202791 A JP 2006202791A
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- 239000000463 material Substances 0.000 claims description 9
- 238000005259 measurement Methods 0.000 claims description 7
- 238000007789 sealing Methods 0.000 abstract 1
- 238000001514 detection method Methods 0.000 description 16
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15182—Fan-in arrangement of the internal vias
- H01L2924/15184—Fan-in arrangement of the internal vias in different layers of the multilayer substrate
Landscapes
- Apparatus For Radiation Diagnosis (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Measurement Of Radiation (AREA)
Abstract
【解決手段】基板12と、前記基板上に搭載されたICチップ7と、前記ICチップの外周を封止する樹脂13と、前記ICチップからの配線を外部に導きだすための導線14と、からなるICパッケージにおいて、前記基板または前記樹脂のうち少なくとも一方に放射線遮蔽部8が備えられたことを特徴とするICパッケージ。
【選択図】図4
Description
しかし、このような構成を採用した場合、検出素子と信号処理回路との間に介在するX線遮蔽板が邪魔して、信号線の取り回しが困難となる。また、プリント基板上の端子からIC上の端子にワイヤボンディングで配線するためには専用の装置が必要となりコストと手間の増大を招く。また、X線遮蔽板の存在のため、検出素子とICとの間をBGAにより結合することはできない。
また、前記ICパッケージは、前記導線に接続されたボールグリッドアレイをその表面に備えたことを特徴とする。
また、前記ICパッケージは、前記基板自体が放射線遮蔽材料からなり前記放射線遮蔽部として機能することを特徴とする。
さらに、X線CT装置のX線検出器に搭載されるX線計測回路用ICへ上記ICパッケージを用いたことを特徴とするX線CT装置を提供する。
また、ICを検出器素子の近傍に配置させることができ、配線が短くなる。これにより、検出信号のデジタル化の際の外部からの雑音混入を減少できる。
図10では、多層配線基板12自体を重金属酸化物や窒化物焼結体などのX線吸収作用を持つ素材で構成することで、パッケージ10の裏面から入射するX線を遮蔽することができる。
この場合、後にX線遮蔽体8を形成する手間をかけることなく、ICチップをX線から防護可能となる。これにより、工程の簡略化、製造コストの低減、及び設計の自由度が可能となる。
Claims (4)
- 基板と、前記基板上に搭載されたICチップと、前記ICチップの外周を封止する樹脂と、前記ICチップからの配線を外部に導きだすための導線と、からなるICパッケージにおいて、前記基板または前記樹脂のうち少なくとも一方に放射線遮蔽部が備えられたことを特徴とするICパッケージ。
- 前記導線に接続されたボールグリッドアレイをその表面に備えた請求項1に記載のICパッケージ。
- 前記基板自体が放射線遮蔽材料からなり前記放射線遮蔽部として機能することを特徴とする請求項1または2に記載のICパッケージ。
- X線CT装置のX線検出器に搭載されるX線計測回路用ICへ請求項1乃至3のいずれかに記載のICパッケージを用いたことを特徴とするX線CT装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2005009728A JP4509806B2 (ja) | 2005-01-18 | 2005-01-18 | Icパッケージ及びそれを用いたx線ct装置 |
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JP2005009728A JP4509806B2 (ja) | 2005-01-18 | 2005-01-18 | Icパッケージ及びそれを用いたx線ct装置 |
Publications (3)
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JP2006202791A true JP2006202791A (ja) | 2006-08-03 |
JP2006202791A5 JP2006202791A5 (ja) | 2008-02-28 |
JP4509806B2 JP4509806B2 (ja) | 2010-07-21 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008064664A (ja) * | 2006-09-08 | 2008-03-21 | Mitsubishi Electric Corp | 荷電粒子線の線量分布測定装置 |
US7928385B2 (en) | 2008-09-10 | 2011-04-19 | Canon Kabushiki Kaisha | Radiation machine |
JP2011245209A (ja) * | 2010-05-31 | 2011-12-08 | Ge Medical Systems Global Technology Co Llc | X線検出器モジュールおよびx線検出器並びにx線ct装置 |
JP2012105967A (ja) * | 2010-10-20 | 2012-06-07 | Toshiba Corp | Das検出器及びx線コンピュータ断層撮影装置 |
JP2012118073A (ja) * | 2010-11-30 | 2012-06-21 | General Electric Co <Ge> | スルービアインターポーザを有する検出器アレイ |
JP2015521283A (ja) * | 2012-05-07 | 2015-07-27 | コーニンクレッカ フィリップス エヌ ヴェ | 少なくとも2つのシンチレータアレイ層間に配置される少なくとも1つの薄型フォトセンサを有する多層型水平コンピュータ断層撮影(ct)検出器アレイ |
JP2018098444A (ja) * | 2016-12-16 | 2018-06-21 | 株式会社デンソー | 電子装置 |
CN111149208A (zh) * | 2017-09-29 | 2020-05-12 | 芬兰探测技术股份有限公司 | 集成辐射探测器设备 |
US10896879B2 (en) | 2018-03-14 | 2021-01-19 | Samsung Electronics Co., Ltd. | Semiconductor package having reflective layer with selective transmittance |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60106150A (ja) * | 1983-11-15 | 1985-06-11 | Nippon Telegr & Teleph Corp <Ntt> | 耐放射線パツケ−ジ |
JPH03208364A (ja) * | 1990-01-10 | 1991-09-11 | Mitsubishi Electric Corp | 半導体パッケージ |
JP2001083255A (ja) * | 1999-09-10 | 2001-03-30 | Kyocera Corp | X線検出素子搭載用配線基板 |
JP2001094139A (ja) * | 1999-09-24 | 2001-04-06 | Kyocera Corp | X線検出素子搭載用配線基板 |
JP2001511202A (ja) * | 1997-01-30 | 2001-08-07 | スペース エレクトロニクス,インコーポレイテッド | 放射線遮蔽材をイオン化するための方法及び組成物関連出願のクロスレファレンス |
JP2006518112A (ja) * | 2003-02-13 | 2006-08-03 | フリースケール セミコンダクター インコーポレイテッド | 電子部品及びその製造方法 |
-
2005
- 2005-01-18 JP JP2005009728A patent/JP4509806B2/ja not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60106150A (ja) * | 1983-11-15 | 1985-06-11 | Nippon Telegr & Teleph Corp <Ntt> | 耐放射線パツケ−ジ |
JPH03208364A (ja) * | 1990-01-10 | 1991-09-11 | Mitsubishi Electric Corp | 半導体パッケージ |
JP2001511202A (ja) * | 1997-01-30 | 2001-08-07 | スペース エレクトロニクス,インコーポレイテッド | 放射線遮蔽材をイオン化するための方法及び組成物関連出願のクロスレファレンス |
JP2001083255A (ja) * | 1999-09-10 | 2001-03-30 | Kyocera Corp | X線検出素子搭載用配線基板 |
JP2001094139A (ja) * | 1999-09-24 | 2001-04-06 | Kyocera Corp | X線検出素子搭載用配線基板 |
JP2006518112A (ja) * | 2003-02-13 | 2006-08-03 | フリースケール セミコンダクター インコーポレイテッド | 電子部品及びその製造方法 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008064664A (ja) * | 2006-09-08 | 2008-03-21 | Mitsubishi Electric Corp | 荷電粒子線の線量分布測定装置 |
US7928385B2 (en) | 2008-09-10 | 2011-04-19 | Canon Kabushiki Kaisha | Radiation machine |
JP2011245209A (ja) * | 2010-05-31 | 2011-12-08 | Ge Medical Systems Global Technology Co Llc | X線検出器モジュールおよびx線検出器並びにx線ct装置 |
JP2012105967A (ja) * | 2010-10-20 | 2012-06-07 | Toshiba Corp | Das検出器及びx線コンピュータ断層撮影装置 |
JP2012118073A (ja) * | 2010-11-30 | 2012-06-21 | General Electric Co <Ge> | スルービアインターポーザを有する検出器アレイ |
JP2015521283A (ja) * | 2012-05-07 | 2015-07-27 | コーニンクレッカ フィリップス エヌ ヴェ | 少なくとも2つのシンチレータアレイ層間に配置される少なくとも1つの薄型フォトセンサを有する多層型水平コンピュータ断層撮影(ct)検出器アレイ |
JP2018098444A (ja) * | 2016-12-16 | 2018-06-21 | 株式会社デンソー | 電子装置 |
CN111149208A (zh) * | 2017-09-29 | 2020-05-12 | 芬兰探测技术股份有限公司 | 集成辐射探测器设备 |
JP2020535404A (ja) * | 2017-09-29 | 2020-12-03 | ディテクション テクノロジー オイ | 統合型放射線検出器デバイス |
US10896879B2 (en) | 2018-03-14 | 2021-01-19 | Samsung Electronics Co., Ltd. | Semiconductor package having reflective layer with selective transmittance |
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