JP6132328B2 - 大面積x線検出器 - Google Patents
大面積x線検出器 Download PDFInfo
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- JP6132328B2 JP6132328B2 JP2012043106A JP2012043106A JP6132328B2 JP 6132328 B2 JP6132328 B2 JP 6132328B2 JP 2012043106 A JP2012043106 A JP 2012043106A JP 2012043106 A JP2012043106 A JP 2012043106A JP 6132328 B2 JP6132328 B2 JP 6132328B2
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- 239000000758 substrate Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 8
- 239000011669 selenium Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229910004613 CdTe Inorganic materials 0.000 claims description 3
- 229910004611 CdZnTe Inorganic materials 0.000 claims description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 210000000481 breast Anatomy 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Molecular Biology (AREA)
- High Energy & Nuclear Physics (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Apparatus For Radiation Diagnosis (AREA)
Description
110 印刷回路基板
112 コンタクト
114,157,158 バンプ
116 樹脂
120 チップ
122 シリコン基板
124 第1電極パッド
130,150 絶縁層
132 ピクセルパッド
134 ピンパッド
140 第1基板
141 貫通ホール
142 第1コンタクト
145 水平配線
151 貫通ホール
152 第2コンタクト
154 第2電極パッド
156 第3電極パッド
156a 延びた部分
159 ワイヤー
160 ピクセル電極
170 フォトコンダクタ
180 共通電極
Claims (9)
- 印刷回路基板に配置され、それぞれ中央に形成された複数のピクセルパッドと、前記ピクセルパッドを取り囲む複数のピンパッドとを備えた複数のチップと、
前記各チップに対応するように、その上に配置された複数のピクセル電極と、
前記複数のピクセル電極と前記複数のピクセルパッドとを電気的に連結し、前記複数のピクセル電極がその上部面に形成された再分配層と、
前記各チップで、前記ピンパッドが形成された裏面上に形成された複数の第1電極パッドと、
前記複数のピクセル電極上のフォトコンダクタと、
前記フォトコンダクタ上の共通電極と、
前記再分配層の下部面上に形成された複数の第2電極パッドと、
前記再分配層上において、前記複数の第2電極パッドを取り囲みながら前記第2電極パッドと電気的に連結される複数の第3電極パッドと、
前記複数のチップ間のギャップで、前記第1電極パッドを対応する前記第3電極パッドに電気的に連結する複数のワイヤーを備えることを特徴とするX線検出器。 - 前記複数のピクセル電極がカバーする面積が、前記複数のピクセルパッドがカバーする面積より大きいことを特徴とする請求項1に記載のX線検出器。
- 前記再分配層は、
少なくとも一つの垂直配線と、
前記垂直配線と連結された少なくとも一つの水平配線と、を備えることを特徴とする請求項2に記載のX線検出器。 - 前記第3電極パッドは、対応する前記チップに露出されるように外に延びた部分を備え、前記ワイヤーは、前記延びた部分と前記第1電極パッドを連結することを特徴とする請求項1に記載のX線検出器。
- 前記第3電極パッドと前記ピンパッドとの間の複数の第2バンプをさらに備え、前記第2バンプは、前記第3電極パッドと前記ピンパッドとを電気的に連結することを特徴とする請求項1に記載のX線検出器。
- 前記印刷回路基板と前記第1電極パッドとの間の複数の第1バンプをさらに備え、前記第1バンプは、前記第1電極パッドと前記印刷回路基板とを電気的に連結することを特徴とする請求項1に記載のX線検出器。
- 前記再分配層は、前記ピクセル電極の下部の第1基板と、前記第1基板の下部の絶縁層と、を備え、
前記第1基板は、前記ピクセル電極と連結される第1垂直配線を備え、
前記絶縁層は、前記ピクセルパッドと連結される第2垂直配線を備え、
前記第1垂直配線及び前記第2垂直配線は、それらの間の水平配線を通じて電気的に連結されることを特徴とする請求項1に記載のX線検出器。 - 前記印刷回路基板と前記チップとの間を満たした樹脂をさらに備えることを特徴とする請求項1に記載のX線検出器。
- 前記フォトコンダクタは、非晶質セレン(a−Se),HgI2,PbI2,CdTe,CdZnTe,PbOのうち選択された少なくとも一つの物質で形成されたことを特徴とする請求項1に記載のX線検出器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110019646A KR101761817B1 (ko) | 2011-03-04 | 2011-03-04 | 대면적 엑스선 검출기 |
KR10-2011-0019646 | 2011-03-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012185159A JP2012185159A (ja) | 2012-09-27 |
JP6132328B2 true JP6132328B2 (ja) | 2017-05-24 |
Family
ID=46730756
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012043106A Expired - Fee Related JP6132328B2 (ja) | 2011-03-04 | 2012-02-29 | 大面積x線検出器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9054010B2 (ja) |
JP (1) | JP6132328B2 (ja) |
KR (1) | KR101761817B1 (ja) |
CN (1) | CN102655159B (ja) |
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KR101654140B1 (ko) | 2010-03-30 | 2016-09-09 | 삼성전자주식회사 | 산화물 반도체 트랜지스터를 구비한 엑스선 검출기 |
KR101678671B1 (ko) | 2010-04-01 | 2016-11-22 | 삼성전자주식회사 | 이중 포토컨덕터를 구비한 엑스선 검출기 |
KR101820843B1 (ko) * | 2011-02-18 | 2018-01-22 | 삼성전자주식회사 | 확산방지막을 구비한 엑스선 검출기 |
KR101761817B1 (ko) * | 2011-03-04 | 2017-07-26 | 삼성전자주식회사 | 대면적 엑스선 검출기 |
JP6310471B2 (ja) * | 2012-11-09 | 2018-04-11 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 検出器結晶のためのサブバンド赤外照射 |
CN105556673B (zh) * | 2013-07-26 | 2018-11-30 | 模拟技术公司 | 用于辐射成像模式的探测器阵列的探测器单元 |
GB2516872A (en) | 2013-08-02 | 2015-02-11 | Ibm | A method for a logging process in a data storage system |
CN103531601B (zh) * | 2013-10-24 | 2015-12-09 | 重庆大学 | 一种用于直接探测x射线的大面积cmos图像传感器 |
TWI535289B (zh) * | 2013-11-22 | 2016-05-21 | 財團法人工業技術研究院 | X光平板感測器之殘留電荷消除方法及裝置 |
JP6528376B2 (ja) * | 2014-08-27 | 2019-06-12 | 富士通株式会社 | 撮像装置及びその製造方法 |
EP3281041B1 (en) | 2015-04-07 | 2020-06-10 | Shenzhen Xpectvision Technology Co., Ltd. | Methods of making semiconductor x-ray detector |
WO2016161542A1 (en) | 2015-04-07 | 2016-10-13 | Shenzhen Xpectvision Technology Co.,Ltd. | Semiconductor x-ray detector |
US10061038B2 (en) | 2015-04-07 | 2018-08-28 | Shenzhen Xpectvision Technology Co., Ltd. | Semiconductor X-ray detector |
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CN107615095B (zh) | 2015-06-10 | 2020-04-14 | 深圳帧观德芯科技有限公司 | 用于x射线萤光的检测器 |
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US10705031B2 (en) | 2015-08-27 | 2020-07-07 | Shenzhen Xpectvision Technology Co., Ltd. | X-ray imaging with a detector capable of resolving photon energy |
CN106486502A (zh) * | 2015-08-27 | 2017-03-08 | 中国科学院微电子研究所 | 一种x射线传感器及其制造方法 |
CN107923987B (zh) | 2015-09-08 | 2020-05-15 | 深圳帧观德芯科技有限公司 | 用于制作x射线检测器的方法 |
JP6877772B2 (ja) * | 2016-10-27 | 2021-05-26 | 株式会社リガク | 検出器 |
EP3376261B1 (de) * | 2017-03-15 | 2020-04-29 | Siemens Healthcare GmbH | Röntgendetektor aufweisend ein konverterelement mit umverdrahtungseinheit |
EP3658963A4 (en) * | 2017-07-26 | 2021-03-03 | Shenzhen Xpectvision Technology Co., Ltd. | X-RAY DETECTOR |
EP3743744A4 (en) * | 2018-01-25 | 2021-07-28 | Shenzhen Xpectvision Technology Co., Ltd. | RADIATION DETECTOR PACKAGING |
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-
2011
- 2011-03-04 KR KR1020110019646A patent/KR101761817B1/ko active IP Right Grant
- 2011-08-18 US US13/212,759 patent/US9054010B2/en not_active Expired - Fee Related
-
2012
- 2012-02-27 CN CN201210046691.XA patent/CN102655159B/zh not_active Expired - Fee Related
- 2012-02-29 JP JP2012043106A patent/JP6132328B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN102655159A (zh) | 2012-09-05 |
US20120223241A1 (en) | 2012-09-06 |
US9054010B2 (en) | 2015-06-09 |
JP2012185159A (ja) | 2012-09-27 |
KR101761817B1 (ko) | 2017-07-26 |
CN102655159B (zh) | 2016-09-28 |
KR20120100627A (ko) | 2012-09-12 |
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