JP2020533793A - 半導体素子上に金属層を形成するためのスパッタリングシステムおよび方法 - Google Patents
半導体素子上に金属層を形成するためのスパッタリングシステムおよび方法 Download PDFInfo
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- JP2020533793A JP2020533793A JP2020513845A JP2020513845A JP2020533793A JP 2020533793 A JP2020533793 A JP 2020533793A JP 2020513845 A JP2020513845 A JP 2020513845A JP 2020513845 A JP2020513845 A JP 2020513845A JP 2020533793 A JP2020533793 A JP 2020533793A
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- Prior art keywords
- layer
- sputtering
- semiconductor device
- aluminum layer
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 167
- 239000004065 semiconductor Substances 0.000 title claims abstract description 161
- 238000000034 method Methods 0.000 title claims abstract description 75
- 229910052751 metal Inorganic materials 0.000 title description 51
- 239000002184 metal Substances 0.000 title description 51
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 198
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 198
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 69
- 239000010936 titanium Substances 0.000 claims description 68
- 229910052719 titanium Inorganic materials 0.000 claims description 68
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 238000005304 joining Methods 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 57
- 238000010586 diagram Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 357
- 238000001465 metallisation Methods 0.000 description 74
- 230000008021 deposition Effects 0.000 description 32
- 239000007789 gas Substances 0.000 description 31
- 238000005240 physical vapour deposition Methods 0.000 description 22
- 239000002245 particle Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 8
- 230000005669 field effect Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000002923 metal particle Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 210000000746 body region Anatomy 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
- C23C14/025—Metallic sublayers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Junction Field-Effect Transistors (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (21)
- 第1の表面を備える半導体素子層と、
前記半導体素子層の前記第1の表面上に配置され、互いに間隔を開けて位置している複数のゲート電極と、
前記半導体素子層の前記第1の表面内に配置され、各々が前記複数のゲート電極のうちの隣同士のゲート電極の間に配置されている複数のコンタクト領域と、
前記複数の電極の各々のゲート電極上に隣接して配置され、複数の開口部を備えており、前記複数の開口部の各開口部は、前記複数のコンタクト領域のうちの一コンタクト領域の上方に位置している誘電体層と、
前記誘電体層上に配置されたアルミニウム層と
を備える半導体素子であって、
前記アルミニウム層は、前記アルミニウム層が前記半導体素子層の前記複数のコンタクト領域上に位置するように、前記誘電体層の前記複数の開口部の各開口部へと延びており、当該半導体素子のセルピッチは、約4.5μm〜約8μmの間であり、前記複数の開口部の各開口部は、幅および高さを備え、前記幅は、約2μm以下であり、前記幅に対する前記高さの比率は、約1:1〜約5:1の間であり、前記複数の開口部の各開口部における前記アルミニウム層のステップカバレッジは、約75%以上である、半導体素子。 - 前記アルミニウム層のステップカバレッジは、85%以上である、請求項1に記載の半導体素子。
- 前記幅に対する前記高さの比率は、約1.1:1〜約1.2:1の間である、請求項1に記載の半導体素子。
- 前記アルミニウム層の厚さは、約3μm〜約5μmの間である、請求項1に記載の半導体素子。
- 複数のソースコンタクトを備えており、各々のソースコンタクトは、前記複数のコンタクト領域の一コンタクト領域に隣接して配置され、前記アルミニウム層は、前記複数のソースコンタクトの各々のソースコンタクト上に配置されている、請求項1に記載の半導体素子。
- 前記誘電体層上に配置されたチタン層を備え、前記チタン層は、前記チタン層が前記半導体素子層の前記複数のコンタクト領域上に位置するように、前記誘電体層の前記複数の開口部の各開口部へと延びており、前記アルミニウム層は、前記チタン層上に配置されている、請求項1に記載の半導体素子。
- 前記チタン層と前記アルミニウム層との間に隣接して配置されたチッ化チタン層を備える、請求項6に記載の半導体素子。
- 前記チタン層は、前記複数のコンタクト領域の各々のコンタクト領域に隣接して配置されている、請求項6に記載の半導体素子。
- 複数のソースコンタクトを備えており、各々のソースコンタクトは、前記複数のコンタクト領域の一コンタクト領域に隣接して配置され、前記チタン層は、前記複数のソースコンタクトの各々のソースコンタクト上に隣接して配置されている、請求項6に記載の半導体素子。
- 前記半導体素子層は、第1の導電型を有し、前記半導体素子層は、
前記半導体素子層に埋め込まれた前記第1の導電型を有する複数のソース領域と、
前記複数のソース領域に隣接して前記半導体素子層に埋め込まれた第2の導電型を有する複数のウェル領域と
を備え、
前記複数のコンタクト領域の各々のコンタクト領域は、前記複数のソース領域のうちの少なくとも1つのソース領域の一部分、前記複数のウェル領域のうちの少なくとも1つのウェル領域の一部分、または両方を含む前記半導体素子層の前記第1の表面の一領域である、請求項1に記載の半導体素子。 - 前記半導体素子は、MOSFETまたはJFET素子である、請求項1に記載の半導体素子。
- 前記半導体素子層は、炭化ケイ素半導体素子層である、請求項11に記載の半導体素子。
- スパッタリングチャンバ内に配置された半導体素子の表面上にアルミニウム層の第1の部分をスパッタリングするステップであって、前記アルミニウム層の前記第1の部分のスパッタリングは、ターゲット電源を使用して第1の電力レベルで前記スパッタリングチャンバ内に配置されたアルミニウムターゲットに電力を供給することと、バイアス電圧供給部を使用して第1のバイアス電圧レベルで前記半導体素子へとバイアス電圧を供給することと、スパッタリングガス供給部を使用して前記スパッタリングチャンバへとスパッタリングガスを供給することとを含むステップと、
前記アルミニウム層の前記第1の部分に隣接して前記アルミニウム層の第2の部分をスパッタリングするステップであって、前記アルミニウム層の前記第2の部分のスパッタリングは、前記ターゲット電源を使用して前記第1の電力レベルよりも高い第2の電力レベルで前記アルミニウムターゲットに前記電力を供給することと、前記バイアス電圧供給部を使用して第2のバイアス電圧レベルで前記半導体素子へと前記バイアス電圧を供給することと、前記スパッタリングガス供給部を使用して前記スパッタリングチャンバへと前記スパッタリングガスを供給することとを含むステップと、
前記アルミニウム層の前記第2の部分に隣接して前記アルミニウム層の第3の部分をスパッタリングするステップであって、前記アルミニウム層の前記第3の部分のスパッタリングは、前記ターゲット電源を使用して前記第1の電力レベルよりも高い第3の電力レベルで前記アルミニウムターゲットに前記電力を供給することと、前記半導体素子を電気的に浮遊させることと、前記スパッタリングガス供給部を使用して前記スパッタリングチャンバへと前記スパッタリングガスを供給することとを含むステップと
を含む方法。 - 前記第1の電力レベルは、約7kW〜約9.5kWの間であり、前記第2および第3の電力レベルの各々は、約11kW〜約13kWの間であり、前記第1および第2のバイアス電圧レベルの各々は、約300V以上であり、前記アルミニウム層の前記第1、第2、および第3の部分をスパッタリングするときの前記スパッタリングチャンバ内の圧力は、約4mT以下である、請求項13に記載の方法。
- 前記第2および第3の電力レベルの各々は、前記ターゲット電源の最大電力レベルにほぼ等しく、前記第1の電力レベルは、前記第2および第3の電力レベルの約50%〜約80%の間であり、前記第1および第2のバイアス電圧レベルの各々は、前記バイアス電圧供給部の最大バイアス電圧レベルにほぼ等しい、請求項13に記載の方法。
- 前記ターゲット電源の前記最大電力レベルは、11.9kWにほぼ等しく、前記バイアス電圧供給部の前記最大バイアス電圧レベルは、300Vにほぼ等しい、請求項15に記載の方法。
- 前記アルミニウム層の前記第1、第2、および第3の部分をスパッタリングするときの前記スパッタリングチャンバ内の圧力は、約5mT以下である、請求項15に記載の方法。
- 前記半導体素子の前記表面は、誘電体層を備え、前記誘電体層は、前記誘電体層を貫いて形成された複数の開口部を有し、前記複数の開口部の各開口部の幅は、約2μm以下であり、前記アルミニウム層は、少なくとも部分的に前記複数の開口部の各開口部へと延び、前記複数の開口部の各開口部における前記アルミニウム層のステップカバレッジは、約80%以上である、請求項17に記載の方法。
- 前記誘電体層は、前記半導体素子の複数のゲート電極上に隣接して配置され、前記複数の開口部の各開口部は、前記半導体素子の半導体素子層の第1の表面内に形成された複数のコンタクト領域のそれぞれのコンタクト領域の上方に配置され、前記複数のコンタクト領域の各々のコンタクト領域は、第1の導電型を有するソース領域の一部分、第2の導電型を有するウェル領域の一部分、または両方を含む前記半導体素子層の前記第1の表面の一領域である、請求項18に記載の方法。
- 前記アルミニウム層の前記第1の部分のスパッタリングに先立って前記半導体素子の前記表面上にチタン層をスパッタリングするステップ
を含み、
前記アルミニウム層の前記第1の部分のスパッタリングは、前記第1の部分を前記チタン層上に直接スパッタリングすることを含む、請求項17に記載の方法。 - 前記アルミニウム層の前記第3の部分へと1つ以上のワイヤを接合するステップを含む、請求項20に記載の方法。
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