JP2020532113A - プラズマ処理および/または熱処理を使用して、酸化ハフニウムに基づく強誘電体材料の性能を向上させるための方法 - Google Patents
プラズマ処理および/または熱処理を使用して、酸化ハフニウムに基づく強誘電体材料の性能を向上させるための方法 Download PDFInfo
- Publication number
- JP2020532113A JP2020532113A JP2020509491A JP2020509491A JP2020532113A JP 2020532113 A JP2020532113 A JP 2020532113A JP 2020509491 A JP2020509491 A JP 2020509491A JP 2020509491 A JP2020509491 A JP 2020509491A JP 2020532113 A JP2020532113 A JP 2020532113A
- Authority
- JP
- Japan
- Prior art keywords
- hfo
- layer
- plasma treatment
- substrate
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 190
- 238000009832 plasma treatment Methods 0.000 title claims abstract description 125
- 229910052735 hafnium Inorganic materials 0.000 title claims abstract description 11
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 title claims abstract description 11
- 238000010438 heat treatment Methods 0.000 title claims description 66
- 239000000463 material Substances 0.000 title description 17
- 239000000758 substrate Substances 0.000 claims abstract description 152
- 238000012545 processing Methods 0.000 claims abstract description 97
- 238000000137 annealing Methods 0.000 claims abstract description 40
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000000231 atomic layer deposition Methods 0.000 claims description 96
- 239000012212 insulator Substances 0.000 claims description 93
- 238000000151 deposition Methods 0.000 claims description 58
- 239000007789 gas Substances 0.000 claims description 56
- 238000011282 treatment Methods 0.000 claims description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 28
- 229910017840 NH 3 Inorganic materials 0.000 claims description 28
- 229910052786 argon Inorganic materials 0.000 claims description 27
- 239000002019 doping agent Substances 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 24
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 19
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 229910052746 lanthanum Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 5
- 229910001882 dioxygen Inorganic materials 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 abstract description 3
- 210000002381 plasma Anatomy 0.000 description 71
- 241000894007 species Species 0.000 description 41
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 230000008021 deposition Effects 0.000 description 20
- 238000005229 chemical vapour deposition Methods 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 19
- 238000005121 nitriding Methods 0.000 description 18
- 238000005240 physical vapour deposition Methods 0.000 description 17
- 229910052741 iridium Inorganic materials 0.000 description 16
- 238000012546 transfer Methods 0.000 description 16
- 230000007547 defect Effects 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- 238000009616 inductively coupled plasma Methods 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 239000002826 coolant Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 239000002243 precursor Substances 0.000 description 8
- 238000004151 rapid thermal annealing Methods 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 229930195733 hydrocarbon Natural products 0.000 description 7
- 150000002430 hydrocarbons Chemical class 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- 239000004215 Carbon black (E152) Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- 229910052727 yttrium Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- -1 ferromagnets Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 239000012705 liquid precursor Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
- H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/3115—Doping the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6684—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a ferroelectric gate insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
本出願は、2018年8月2日に出願された、米国実用新案出願第16/052,963号の優先権を主張するものであり、また、2017年12月1日に出願された米国特許仮出願第62/593,530号および2017年8月18日に出願された米国特許仮出願第62/547,360号の利益を主張するものである。上記に引用されている出願の開示は全体が、参照により本明細書に組み込まれる。
実施例
基板の前処理および/またはHfO2層の処理
実施例
[適用例1]
基板処理システムにおいて強誘電体酸化ハフニウム(HfO 2 )を形成するための方法であって、
基板を、前記基板処理システムの処理チャンバー内に配置すること、
前記基板上にHfO 2 層を堆積させること、
前記HfO 2 層のプラズマ処理を実施すること、および
前記HfO 2 層をアニールして、強誘電体ハフニウムHfO 2 を形成すること
を含む方法。
[適用例2]
適用例1に記載の方法であって、前記HfO 2 層は、原子層堆積法(ALD)を使用して堆積される方法。
[適用例3]
適用例1に記載の方法であって、前記HfO 2 層をドープすることをさらに含む方法。
[適用例4]
適用例3に記載の方法であって、前記HfO 2 層をドープすることは、ケイ素、アルミニウム、イットリア、ランタン、およびジルコニウムの少なくとも1つで前記HfO 2 層をドープすることを含む方法。
[適用例5]
適用例3に記載の方法であって、前記HfO 2 層をドープすることは、0〜5mol%のドーパント種で前記HfO 2 層をドープすることを含む方法。
[適用例6]
適用例1に記載の方法であって、前記HfO 2 層を堆積させることは、HfO 2 を前記基板上に堆積させるサイクルおよび前記堆積されたHfO 2 をドープするサイクルを交互に行うことを含む方法。
[適用例7]
適用例1に記載の方法であって、前記HfO 2 層の厚さは、6〜12nmである方法。
[適用例8]
適用例1に記載の方法であって、前記HfO 2 層を堆積させるサイクルおよび前記HfO 2 層のプラズマ処理実施のサイクルを交互に行うことをさらに含む方法。
[適用例9]
適用例1に記載の方法であって、前記プラズマ処理を実施することは、少なくとも1つのプラズマガス種を使用して前記プラズマ処理を実施することを含み、前記少なくとも1つのプラズマガス種は、分子窒素(N 2 )、アンモニア(NH 3 )、分子酸素(O 2 )、オゾン(O 3 )、アルゴン(Ar)、ならびにアルゴンおよび分子水素(Ar/H 2 )の少なくとも1つを含む方法。
[適用例10]
適用例1に記載の方法であって、前記プラズマ処理を実施することは、分子窒素(N 2 )で前記プラズマ処理を実施することを含み、N 2 で前記プラズマ処理を実施することは、前記HfO 2 層の表面にHfO x N y の形成を引き起こす方法。
[適用例11]
適用例1に記載の方法であって、前記プラズマ処理を実施することは、前記プラズマ処理を15〜60秒間実施することを含む方法。
[適用例12]
適用例1に記載の方法であって、前記プラズマ処理を実施することは、500〜1200ワットの高周波(RF)電力で前記プラズマ処理を実施することを含む方法。
[適用例13]
適用例12に記載の方法であって、前記RF電力は、1〜15MHzで提供される方法。
[適用例14]
適用例1に記載の方法であって、前記HfO 2 層をアニールすることは、500〜1100℃の温度で前記HfO 2 層をアニールすることを含む方法。
[適用例15]
適用例1に記載の方法であって、前記HfO 2 層をアニールすることは、800〜1000℃の温度で前記HfO 2 層をアニールすることを含む方法。
[適用例16]
適用例1に記載の方法であって、前記アニールの前に、上部電極を前記HfO 2 層上に堆積させることをさらに含む方法。
[適用例17]
適用例16に記載の方法であって、前記上部電極は、窒化タンタル、窒化チタン、およびタングステンの少なくとも1つを含む方法。
[適用例18]
適用例1に記載の方法であって、前記基板上への前記HfO 2 層を堆積させることは、前記基板上に形成されている下部層および底部電極の1つに前記HfO 2 層を堆積させることを含む方法。
[適用例19]
基板処理システムにおいて強誘電体酸化ハフニウム(HfO 2 )を含む基板を処理するための方法であって、
絶縁体層を含む基板を、前記基板処理システムの処理チャンバー内に配置すること、
前記絶縁体層の熱処理およびプラズマ処理の少なくとも1つを実施すること、
前記絶縁体層上にHfO 2 層を堆積させること、および
前記HfO 2 層をアニールして、強誘電体ハフニウムHfO 2 を形成すること、
を含む方法。
[適用例20]
適用例19に記載の方法であって、前記絶縁体層は、二酸化ケイ素(SiO 2 )およびケイ素オキシ窒化物(SiON)の1つを含む方法。
[適用例21]
適用例19に記載の方法であって、前記熱処理および前記プラズマ処理の少なくとも1つを実施することは、前記熱処理および前記プラズマ処理を連続して実施することを含む方法。
[適用例22]
適用例19に記載の方法であって、前記熱処理および前記プラズマ処理を少なくとも1つ実施することは、前記基板の温度を1〜30分間にわたって200〜600℃に上昇させることを含む方法。
[適用例23]
適用例19に記載の方法であって、前記熱処理および前記プラズマ処理の少なくとも1つを実施することは、前記処理チャンバーに、N 2 、N 2 /H 2 、NH 3 、O 2 、およびO 3 の少なくとも1つを提供することを含む方法。
[適用例24]
適用例19に記載の方法であって、前記HfO 2 層のプラズマ処理を実施することをさらに含む方法。
[適用例25]
適用例19に記載の方法であって、前記HfO 2 層は、原子層堆積法(ALD)を使用して堆積される方法。
[適用例26]
適用例19に記載の方法であって、前記HfO 2 層をドープすることをさらに含む方法。
[適用例27]
基板処理システムにおいて強誘電体酸化ハフニウム(HfO 2 )を含む基板を処理するための方法であって、
絶縁体層を含む基板を、前記基板処理システムの処理チャンバー内に配置すること、
前記絶縁体層上に少なくとも1つの第1のHfO 2 層を堆積させること、
前記少なくとも1つの第1のHfO 2 層の熱処理およびプラズマ処理の少なくとも1つを実施すること、
前記少なくとも1つの第1のHfO 2 層上に少なくとも1つの第2のHfO 2 層を堆積させること、および
前記少なくとも1つの第2のHfO 2 層および前記少なくとも1つの第1のHfO 2 層をアニールして、強誘電体ハフニウムHfO 2 層を形成すること
を含む方法。
[適用例28]
適用例27に記載の方法であって、前記絶縁体層は、二酸化ケイ素(SiO 2 )およびケイ素オキシ窒化物(SiON)の1つを含む方法。
[適用例29]
適用例27に記載の方法であって、前記熱処理および前記プラズマ処理の少なくとも1つを実施することは、前記熱処理および前記プラズマ処理を連続して実施することを含む方法。
[適用例30]
適用例27に記載の方法であって、前記熱処理および前記プラズマ処理の少なくとも1つを実施することは、前記基板の温度を1〜30分間にわたって200〜600℃に上昇させることを含む方法。
[適用例31]
適用例27に記載の方法であって、前記熱処理および前記プラズマ処理の少なくとも1つを実施することは、前記処理チャンバーに、N 2 、N 2 /H 2 、NH 3 、O 2 、およびO 3 の少なくとも1つを提供することを含む方法。
[適用例32]
適用例27に記載の方法であって、前記少なくとも1つの第1のHfO 2 層は、前記少なくとも1つの第2のHfO 2 層を堆積させるために使用されるドーズ時間よりも長いドーズ時間に従って堆積される方法。
[適用例33]
適用例27に記載の方法であって、前記少なくとも1つの第1のHfO 2 層を堆積させる前に、前記絶縁体層の熱処理およびプラズマ処理の少なくとも1つを実施することをさらに含む方法。
[適用例34]
適用例27に記載の方法であって、前記少なくとも1つの第1のHfO 2 層および前記少なくとも1つの第2のHfO 2 層は、原子層堆積法(ALD)を使用して堆積される方法。
Claims (34)
- 基板処理システムにおいて強誘電体酸化ハフニウム(HfO2)を形成するための方法であって、
基板を、前記基板処理システムの処理チャンバー内に配置すること、
前記基板上にHfO2層を堆積させること、
前記HfO2層のプラズマ処理を実施すること、および
前記HfO2層をアニールして、強誘電体ハフニウムHfO2を形成すること
を含む方法。 - 請求項1に記載の方法であって、前記HfO2層は、原子層堆積法(ALD)を使用して堆積される方法。
- 請求項1に記載の方法であって、前記HfO2層をドープすることをさらに含む方法。
- 請求項3に記載の方法であって、前記HfO2層をドープすることは、ケイ素、アルミニウム、イットリア、ランタン、およびジルコニウムの少なくとも1つで前記HfO2層をドープすることを含む方法。
- 請求項3に記載の方法であって、前記HfO2層をドープすることは、0〜5mol%のドーパント種で前記HfO2層をドープすることを含む方法。
- 請求項1に記載の方法であって、前記HfO2層を堆積させることは、HfO2を前記基板上に堆積させるサイクルおよび前記堆積されたHfO2をドープするサイクルを交互に行うことを含む方法。
- 請求項1に記載の方法であって、前記HfO2層の厚さは、6〜12nmである方法。
- 請求項1に記載の方法であって、前記HfO2層を堆積させるサイクルおよび前記HfO2層のプラズマ処理実施のサイクルを交互に行うことをさらに含む方法。
- 請求項1に記載の方法であって、前記プラズマ処理を実施することは、少なくとも1つのプラズマガス種を使用して前記プラズマ処理を実施することを含み、前記少なくとも1つのプラズマガス種は、分子窒素(N2)、アンモニア(NH3)、分子酸素(O2)、オゾン(O3)、アルゴン(Ar)、ならびにアルゴンおよび分子水素(Ar/H2)の少なくとも1つを含む方法。
- 請求項1に記載の方法であって、前記プラズマ処理を実施することは、分子窒素(N2)で前記プラズマ処理を実施することを含み、N2で前記プラズマ処理を実施することは、前記HfO2層の表面にHfOxNyの形成を引き起こす方法。
- 請求項1に記載の方法であって、前記プラズマ処理を実施することは、前記プラズマ処理を15〜60秒間実施することを含む方法。
- 請求項1に記載の方法であって、前記プラズマ処理を実施することは、500〜1200ワットの高周波(RF)電力で前記プラズマ処理を実施することを含む方法。
- 請求項12に記載の方法であって、前記RF電力は、1〜15MHzで提供される方法。
- 請求項1に記載の方法であって、前記HfO2層をアニールすることは、500〜1100℃の温度で前記HfO2層をアニールすることを含む方法。
- 請求項1に記載の方法であって、前記HfO2層をアニールすることは、800〜1000℃の温度で前記HfO2層をアニールすることを含む方法。
- 請求項1に記載の方法であって、前記アニールの前に、上部電極を前記HfO2層上に堆積させることをさらに含む方法。
- 請求項16に記載の方法であって、前記上部電極は、窒化タンタル、窒化チタン、およびタングステンの少なくとも1つを含む方法。
- 請求項1に記載の方法であって、前記基板上への前記HfO2層を堆積させることは、前記基板上に形成されている下部層および底部電極の1つに前記HfO2層を堆積させることを含む方法。
- 基板処理システムにおいて強誘電体酸化ハフニウム(HfO2)を含む基板を処理するための方法であって、
絶縁体層を含む基板を、前記基板処理システムの処理チャンバー内に配置すること、
前記絶縁体層の熱処理およびプラズマ処理の少なくとも1つを実施すること、
前記絶縁体層上にHfO2層を堆積させること、および
前記HfO2層をアニールして、強誘電体ハフニウムHfO2を形成すること、
を含む方法。 - 請求項19に記載の方法であって、前記絶縁体層は、二酸化ケイ素(SiO2)およびケイ素オキシ窒化物(SiON)の1つを含む方法。
- 請求項19に記載の方法であって、前記熱処理および前記プラズマ処理の少なくとも1つを実施することは、前記熱処理および前記プラズマ処理を連続して実施することを含む方法。
- 請求項19に記載の方法であって、前記熱処理および前記プラズマ処理を少なくとも1つ実施することは、前記基板の温度を1〜30分間にわたって200〜600℃に上昇させることを含む方法。
- 請求項19に記載の方法であって、前記熱処理および前記プラズマ処理の少なくとも1つを実施することは、前記処理チャンバーに、N2、N2/H2、NH3、O2、およびO3の少なくとも1つを提供することを含む方法。
- 請求項19に記載の方法であって、前記HfO2層のプラズマ処理を実施することをさらに含む方法。
- 請求項19に記載の方法であって、前記HfO2層は、原子層堆積法(ALD)を使用して堆積される方法。
- 請求項19に記載の方法であって、前記HfO2層をドープすることをさらに含む方法。
- 基板処理システムにおいて強誘電体酸化ハフニウム(HfO2)を含む基板を処理するための方法であって、
絶縁体層を含む基板を、前記基板処理システムの処理チャンバー内に配置すること、
前記絶縁体層上に少なくとも1つの第1のHfO2層を堆積させること、
前記少なくとも1つの第1のHfO2層の熱処理およびプラズマ処理の少なくとも1つを実施すること、
前記少なくとも1つの第1のHfO2層上に少なくとも1つの第2のHfO2層を堆積させること、および
前記少なくとも1つの第2のHfO2層および前記少なくとも1つの第1のHfO2層をアニールして、強誘電体ハフニウムHfO2層を形成すること
を含む方法。 - 請求項27に記載の方法であって、前記絶縁体層は、二酸化ケイ素(SiO2)およびケイ素オキシ窒化物(SiON)の1つを含む方法。
- 請求項27に記載の方法であって、前記熱処理および前記プラズマ処理の少なくとも1つを実施することは、前記熱処理および前記プラズマ処理を連続して実施することを含む方法。
- 請求項27に記載の方法であって、前記熱処理および前記プラズマ処理の少なくとも1つを実施することは、前記基板の温度を1〜30分間にわたって200〜600℃に上昇させることを含む方法。
- 請求項27に記載の方法であって、前記熱処理および前記プラズマ処理の少なくとも1つを実施することは、前記処理チャンバーに、N2、N2/H2、NH3、O2、およびO3の少なくとも1つを提供することを含む方法。
- 請求項27に記載の方法であって、前記少なくとも1つの第1のHfO2層は、前記少なくとも1つの第2のHfO2層を堆積させるために使用されるドーズ時間よりも長いドーズ時間に従って堆積される方法。
- 請求項27に記載の方法であって、前記少なくとも1つの第1のHfO2層を堆積させる前に、前記絶縁体層の熱処理およびプラズマ処理の少なくとも1つを実施することをさらに含む方法。
- 請求項27に記載の方法であって、前記少なくとも1つの第1のHfO2層および前記少なくとも1つの第2のHfO2層は、原子層堆積法(ALD)を使用して堆積される方法。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762547360P | 2017-08-18 | 2017-08-18 | |
US62/547,360 | 2017-08-18 | ||
US201762593530P | 2017-12-01 | 2017-12-01 | |
US62/593,530 | 2017-12-01 | ||
US16/052,963 US20190057860A1 (en) | 2017-08-18 | 2018-08-02 | Methods for improving performance in hafnium oxide-based ferroelectric material using plasma and/or thermal treatment |
US16/052,963 | 2018-08-02 | ||
PCT/US2018/045771 WO2019036252A1 (en) | 2017-08-18 | 2018-08-08 | METHODS OF IMPROVING PERFORMANCE IN HAFNIUM OXIDE FERROELECTRIC MATERIAL USING PLASMA AND / OR THERMAL PROCESSING |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020532113A true JP2020532113A (ja) | 2020-11-05 |
JP7194171B2 JP7194171B2 (ja) | 2022-12-21 |
Family
ID=65360650
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020509491A Active JP7194171B2 (ja) | 2017-08-18 | 2018-08-08 | プラズマ処理および/または熱処理を使用して、酸化ハフニウムに基づく強誘電体材料の性能を向上させるための方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20190057860A1 (ja) |
JP (1) | JP7194171B2 (ja) |
KR (1) | KR102658746B1 (ja) |
CN (1) | CN111033686B (ja) |
TW (1) | TW201921426A (ja) |
WO (1) | WO2019036252A1 (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6887307B2 (ja) * | 2017-05-19 | 2021-06-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
CN109087997A (zh) * | 2017-06-14 | 2018-12-25 | 萨摩亚商费洛储存科技股份有限公司 | 铁电膜层的制造方法、铁电隧道结单元、存储器元件及其写入与读取方法 |
US11349008B2 (en) * | 2018-09-27 | 2022-05-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Negative capacitance transistor having a multilayer ferroelectric structure or a ferroelectric layer with a gradient doping profile |
US11264489B2 (en) | 2020-03-20 | 2022-03-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices |
US11171219B2 (en) * | 2020-03-20 | 2021-11-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices |
US11227933B2 (en) * | 2020-03-31 | 2022-01-18 | Taiwan Semiconductor Manufacturing Company Limited | Ferroelectric field effect transistor using charge trapping band misalignment and methods of forming the same |
US11335792B2 (en) * | 2020-04-06 | 2022-05-17 | Tokyo Electron Limited | Semiconductor processing system with in-situ electrical bias and methods thereof |
US11894240B2 (en) | 2020-04-06 | 2024-02-06 | Tokyo Electron Limited | Semiconductor processing systems with in-situ electrical bias |
KR20220004433A (ko) | 2020-07-03 | 2022-01-11 | 삼성전자주식회사 | 유전체 물질층을 포함하는 박막 구조체 및 이를 구비하는 전자소자 |
US11665909B2 (en) | 2020-07-23 | 2023-05-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | FeRAM with laminated ferroelectric film and method forming same |
CN112447508A (zh) * | 2020-11-24 | 2021-03-05 | 湘潭大学 | 一种通过等离子体技术增强氧化铪(HfO2)基铁电薄膜铁电性能的方法 |
US11688601B2 (en) * | 2020-11-30 | 2023-06-27 | International Business Machines Corporation | Obtaining a clean nitride surface by annealing |
KR102399957B1 (ko) * | 2021-01-25 | 2022-05-19 | 강원대학교산학협력단 | 강유전체 박막의 제조방법 및 이에 의해 제조된 강유전체 박막 |
US20220278115A1 (en) * | 2021-02-26 | 2022-09-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ferroelectric Memory Device and Method of Manufacturing the Same |
EP4135009A1 (en) * | 2021-08-11 | 2023-02-15 | IMEC vzw | A memory device with a ferroelectric charge trapping layer |
KR20230041502A (ko) * | 2021-09-17 | 2023-03-24 | 삼성전자주식회사 | 강유전체 전자 소자 및 그 결함 밀도 추출 방법 |
CN114836716B (zh) * | 2022-03-23 | 2023-01-24 | 中南大学 | 一种无顶电极夹持HfO2基薄膜材料的制备方法及应用 |
CN114990530B (zh) * | 2022-06-02 | 2024-06-07 | 华东师范大学 | 一种低温制备hzo铁电薄膜的方法及hzo铁电薄膜 |
US20240064993A1 (en) * | 2022-08-11 | 2024-02-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating transistor structure |
CN115261788B (zh) * | 2022-09-07 | 2023-04-18 | 宁波大学 | 一种提高HfO2铁电性的方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004158481A (ja) * | 2002-11-01 | 2004-06-03 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2005183940A (ja) * | 2003-12-18 | 2005-07-07 | Sharp Corp | プラズマ酸化high−k電荷トラッピング層を用いて不揮発性メモリを製造する方法 |
JP2008500741A (ja) * | 2004-05-21 | 2008-01-10 | アプライド マテリアルズ インコーポレイテッド | 高誘電率誘電体材料の安定化 |
JP2009506537A (ja) * | 2005-08-23 | 2009-02-12 | アプライド マテリアルズ インコーポレイテッド | ゲート誘電体層の高k窒化物形成における窒素プロファイルエンジニアリング |
JP2010510677A (ja) * | 2006-11-20 | 2010-04-02 | アプライド マテリアルズ インコーポレイテッド | ゲートスタック構造の順次処理のクラスター化方法 |
JP2013058559A (ja) * | 2011-09-07 | 2013-03-28 | Tokyo Electron Ltd | 半導体装置の製造方法及び基板処理システム |
JP2017518639A (ja) * | 2014-05-20 | 2017-07-06 | マイクロン テクノロジー, インク. | 有極性、カイラル、非中心対称性強誘電体材料、その材料を含むメモリセルおよび関連するデバイスと方法。 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100513719B1 (ko) * | 2002-08-12 | 2005-09-07 | 삼성전자주식회사 | 하프늄 산화막 형성용 전구체 및 상기 전구체를 이용한하프늄 산화막의 형성방법 |
US20050252449A1 (en) * | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
US20060019033A1 (en) * | 2004-05-21 | 2006-01-26 | Applied Materials, Inc. | Plasma treatment of hafnium-containing materials |
JP2008166360A (ja) * | 2006-12-27 | 2008-07-17 | Hitachi Ltd | 半導体集積回路装置 |
US20100120245A1 (en) * | 2008-11-07 | 2010-05-13 | Agus Sofian Tjandra | Plasma and thermal anneal treatment to improve oxidation resistance of metal-containing films |
US8546275B2 (en) * | 2011-09-19 | 2013-10-01 | Intermolecular, Inc. | Atomic layer deposition of hafnium and zirconium oxides for memory applications |
US9231206B2 (en) * | 2013-09-13 | 2016-01-05 | Micron Technology, Inc. | Methods of forming a ferroelectric memory cell |
KR20150037009A (ko) * | 2013-09-30 | 2015-04-08 | 에스케이하이닉스 주식회사 | 고유전층을 포함하는 반도체장치 및 그 제조 방법 |
US20150140838A1 (en) * | 2013-11-19 | 2015-05-21 | Intermolecular Inc. | Two Step Deposition of High-k Gate Dielectric Materials |
US9583337B2 (en) * | 2014-03-26 | 2017-02-28 | Ultratech, Inc. | Oxygen radical enhanced atomic-layer deposition using ozone plasma |
-
2018
- 2018-08-02 US US16/052,963 patent/US20190057860A1/en not_active Abandoned
- 2018-08-08 CN CN201880053580.7A patent/CN111033686B/zh active Active
- 2018-08-08 JP JP2020509491A patent/JP7194171B2/ja active Active
- 2018-08-08 KR KR1020207007859A patent/KR102658746B1/ko active IP Right Grant
- 2018-08-08 WO PCT/US2018/045771 patent/WO2019036252A1/en active Application Filing
- 2018-08-14 TW TW107128245A patent/TW201921426A/zh unknown
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004158481A (ja) * | 2002-11-01 | 2004-06-03 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2005183940A (ja) * | 2003-12-18 | 2005-07-07 | Sharp Corp | プラズマ酸化high−k電荷トラッピング層を用いて不揮発性メモリを製造する方法 |
JP2008500741A (ja) * | 2004-05-21 | 2008-01-10 | アプライド マテリアルズ インコーポレイテッド | 高誘電率誘電体材料の安定化 |
JP2009506537A (ja) * | 2005-08-23 | 2009-02-12 | アプライド マテリアルズ インコーポレイテッド | ゲート誘電体層の高k窒化物形成における窒素プロファイルエンジニアリング |
JP2010510677A (ja) * | 2006-11-20 | 2010-04-02 | アプライド マテリアルズ インコーポレイテッド | ゲートスタック構造の順次処理のクラスター化方法 |
JP2013058559A (ja) * | 2011-09-07 | 2013-03-28 | Tokyo Electron Ltd | 半導体装置の製造方法及び基板処理システム |
JP2017518639A (ja) * | 2014-05-20 | 2017-07-06 | マイクロン テクノロジー, インク. | 有極性、カイラル、非中心対称性強誘電体材料、その材料を含むメモリセルおよび関連するデバイスと方法。 |
Also Published As
Publication number | Publication date |
---|---|
WO2019036252A1 (en) | 2019-02-21 |
CN111033686B (zh) | 2024-05-10 |
KR102658746B1 (ko) | 2024-04-17 |
TW201921426A (zh) | 2019-06-01 |
KR20200033980A (ko) | 2020-03-30 |
JP7194171B2 (ja) | 2022-12-21 |
US20190057860A1 (en) | 2019-02-21 |
CN111033686A (zh) | 2020-04-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7194171B2 (ja) | プラズマ処理および/または熱処理を使用して、酸化ハフニウムに基づく強誘電体材料の性能を向上させるための方法 | |
TWI590329B (zh) | 藉由微波電漿處理以提升半導體裝置中之高介電常數膜成核速率及電移動度的方法 | |
US7816283B2 (en) | Method of depositing a higher permittivity dielectric film | |
CN101401194B (zh) | 使用低能量等离子体系统制造高介电常数晶体管栅极的方法和装置 | |
KR20080046647A (ko) | 게이트 유전층의 높은-k 질화에서의 질소 프로파일엔지니어링 | |
JP4162601B2 (ja) | 絶縁膜の形成方法 | |
TWI815891B (zh) | 薄膜及沉積薄膜的方法 | |
JP7354138B2 (ja) | 酸化ハフニウム系強誘電材料のためのキャップ層 | |
KR101713336B1 (ko) | 라이너의 제거 처리 방법 | |
JP7307745B2 (ja) | 窒化ハフニウム層による酸化ハフニウムの強誘電特性の変更 | |
JP2004193409A (ja) | 絶縁膜の形成方法 | |
TWI621218B (zh) | 包含鍺之半導體元件及其形成方法 | |
KR100670671B1 (ko) | 반도체 소자의 하프늄 산화막 형성방법 | |
KR20230054721A (ko) | 게르마늄에 대한 확산 배리어들 | |
JP2009079301A (ja) | 反応性スパッタリング装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200513 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210705 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220823 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220830 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221107 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20221129 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221209 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7194171 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |