JP2020524479A5 - - Google Patents
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- JP2020524479A5 JP2020524479A5 JP2020519020A JP2020519020A JP2020524479A5 JP 2020524479 A5 JP2020524479 A5 JP 2020524479A5 JP 2020519020 A JP2020519020 A JP 2020519020A JP 2020519020 A JP2020519020 A JP 2020519020A JP 2020524479 A5 JP2020524479 A5 JP 2020524479A5
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- input
- switching
- control circuit
- timing control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 claims 21
- 230000008878 coupling Effects 0.000 claims 21
- 238000010168 coupling process Methods 0.000 claims 21
- 238000005859 coupling reaction Methods 0.000 claims 21
- 230000000295 complement effect Effects 0.000 claims 14
- 230000000630 rising effect Effects 0.000 claims 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 9
- 238000000034 method Methods 0.000 claims 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 8
- 229910052710 silicon Inorganic materials 0.000 claims 8
- 239000010703 silicon Substances 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 8
- 229910052594 sapphire Inorganic materials 0.000 claims 5
- 239000010980 sapphire Substances 0.000 claims 5
- 235000012239 silicon dioxide Nutrition 0.000 claims 4
- 239000000377 silicon dioxide Substances 0.000 claims 4
- 230000005540 biological transmission Effects 0.000 claims 2
- 239000012212 insulator Substances 0.000 claims 2
- 230000001172 regenerating effect Effects 0.000 claims 2
- 230000003321 amplification Effects 0.000 claims 1
- 230000001934 delay Effects 0.000 claims 1
- 230000003111 delayed effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 230000003068 static effect Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/627,196 | 2017-06-19 | ||
| US15/627,196 US10116297B1 (en) | 2017-06-19 | 2017-06-19 | DC-coupled high-voltage level shifter |
| PCT/US2018/038123 WO2018236771A1 (en) | 2017-06-19 | 2018-06-18 | Timing controller for dead-time control |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020524479A JP2020524479A (ja) | 2020-08-13 |
| JP2020524479A5 true JP2020524479A5 (https=) | 2021-07-29 |
| JP7155255B2 JP7155255B2 (ja) | 2022-10-18 |
Family
ID=62842325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020519020A Active JP7155255B2 (ja) | 2017-06-19 | 2018-06-18 | デッドタイム制御のためのタイミングコントローラ |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US10116297B1 (https=) |
| JP (1) | JP7155255B2 (https=) |
| KR (1) | KR102544761B1 (https=) |
| CN (1) | CN110771043B (https=) |
| DE (1) | DE112018003130T5 (https=) |
| WO (1) | WO2018236771A1 (https=) |
Families Citing this family (41)
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| US10348293B2 (en) * | 2017-06-19 | 2019-07-09 | Psemi Corporation | Timing controller for dead-time control |
| US10116297B1 (en) * | 2017-06-19 | 2018-10-30 | Psemi Corporation | DC-coupled high-voltage level shifter |
| US11916026B2 (en) * | 2018-08-16 | 2024-02-27 | Qualcomm Incorporated | High voltage supply clamp |
| CN109495091A (zh) * | 2018-10-31 | 2019-03-19 | 北京无线电测量研究所 | 一种脉冲电压调制电路 |
| US10833672B2 (en) * | 2018-11-15 | 2020-11-10 | Rohm Co., Ltd. | Driving circuit for high-side transistor, switching circuit, and controller for DC/DC converter |
| US10749509B1 (en) * | 2019-05-13 | 2020-08-18 | Infineon Technologies Austria Ag | Capacitive-coupled level shifter and related system |
| JP7282599B2 (ja) * | 2019-05-30 | 2023-05-29 | ローム株式会社 | ハイサイドトランジスタの駆動回路、スイッチング回路、ｄｃ／ｄｃコンバータのコントローラ |
| JP7251412B2 (ja) * | 2019-08-30 | 2023-04-04 | 株式会社デンソー | 通信装置 |
| CN110557012B (zh) * | 2019-09-11 | 2020-07-17 | 上海南芯半导体科技有限公司 | 用于2：1正向电荷泵的驱动电路及其实现方法 |
| TWI715224B (zh) * | 2019-09-30 | 2021-01-01 | 瑞昱半導體股份有限公司 | 具有耐壓機制的輸出電路 |
| US10944330B1 (en) * | 2019-12-19 | 2021-03-09 | Cypress Semiconductor Corporation | Self-biased gate driver architecture |
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| CN111404526B (zh) * | 2020-03-19 | 2021-12-03 | 华中科技大学 | 一种可编程高精度动态驱动GaN的电路及其应用 |
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| CN112117999B (zh) * | 2020-08-25 | 2024-07-26 | 广东美的白色家电技术创新中心有限公司 | 驱动电路及家用电器 |
| US11165426B1 (en) * | 2020-09-01 | 2021-11-02 | Nxp Usa, Inc. | Level shifter and a method of level shifting a signal |
| US11335396B1 (en) * | 2020-11-19 | 2022-05-17 | Micron Technology, Inc. | Timing signal delay for a memory device |
| CN114518567B (zh) * | 2020-11-20 | 2025-06-13 | 上海禾赛科技有限公司 | 状态切换电路、光电探测阵列及光学探测系统 |
| US12174773B2 (en) * | 2021-01-28 | 2024-12-24 | Realtek Semiconductor Corp. | Transmission control architecture between sensing device and host device |
| CN112953487B (zh) * | 2021-02-20 | 2025-06-17 | 上海数明半导体有限公司 | 能够形成死区时间的驱动器控制电路和驱动器 |
| TWI745245B (zh) * | 2021-02-26 | 2021-11-01 | 新唐科技股份有限公司 | 電壓轉換器與使用其的電路系統 |
| JP2022144130A (ja) * | 2021-03-18 | 2022-10-03 | ローム株式会社 | ハイサイドトランジスタの駆動回路、スイッチング回路、ｄｃ／ｄｃコンバータのコントローラ |
| CN112968611B (zh) * | 2021-03-22 | 2022-08-23 | 矽力杰半导体技术(杭州)有限公司 | 控制电路以及应用其的开关电源 |
| CN113241933B (zh) * | 2021-05-24 | 2022-08-02 | 电子科技大学 | 一种适用于GaN半桥栅驱动系统的死区时间控制电路 |
| CN115549646B (zh) | 2021-06-30 | 2026-02-17 | 深圳市中兴微电子技术有限公司 | 时钟接收电路和电子设备 |
| US11929743B2 (en) * | 2021-07-26 | 2024-03-12 | Quantinuum Llc | High-voltage semiconductor switch |
| CN115693829B (zh) * | 2021-07-30 | 2025-07-22 | 圆益Pne有限公司 | 控制电池充放电用变流器的控制器及充放电器 |
| US11799287B2 (en) | 2021-11-09 | 2023-10-24 | Qualcomm Incorporated | Area efficient level translating trigger circuit for electrostatic discharge events |
| CN114220405B (zh) * | 2021-12-15 | 2023-01-20 | 惠州视维新技术有限公司 | 电平转换电路、电源集成电路、显示装置和电平转换方法 |
| JP7824086B2 (ja) * | 2022-02-09 | 2026-03-04 | セイコーＮｐｃ株式会社 | 出力回路 |
| CN114640340B (zh) * | 2022-03-25 | 2025-12-16 | 星宸科技股份有限公司 | 具有低传输延迟的电平转换器 |
| CN116931632B (zh) * | 2022-04-12 | 2026-02-03 | 圣邦微电子（北京）股份有限公司 | 一种高压输入级电路及高压输入方法 |
| CN115021752B (zh) * | 2022-06-23 | 2026-03-17 | 思瑞浦微电子科技（苏州）股份有限公司 | 具有隔离电路的数模转换电路和控制数模转换电路的方法 |
| CN116483154B (zh) * | 2023-06-25 | 2023-09-12 | 上海海栎创科技股份有限公司 | 一种低延迟基准输出电路与输出方法 |
| CN116778646B (zh) * | 2023-08-24 | 2023-10-20 | 深圳和成东科技有限公司 | 一种智能收银机电路装置 |
| WO2025072063A1 (en) * | 2023-09-26 | 2025-04-03 | Lam Research Corporation | Systems and methods for regulating power output from a matchless plasma source |
| US12381558B2 (en) | 2023-11-09 | 2025-08-05 | Texas Instruments Incorporated | Level shifter for high voltage driver |
| CN118074702B (zh) * | 2024-04-24 | 2024-07-12 | 瓴科微(上海)集成电路有限责任公司 | 一种边沿检测加速电平转换电路 |
| US20260012182A1 (en) * | 2024-07-03 | 2026-01-08 | Elite Semiconductor Microelectronics Technology Inc. | Voltage level shifter |
| CN119892029A (zh) * | 2024-12-27 | 2025-04-25 | 广东致能半导体有限公司 | 开关速度可调的半导体器件 |
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| US5416043A (en) | 1993-07-12 | 1995-05-16 | Peregrine Semiconductor Corporation | Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer |
| US5969542A (en) * | 1997-05-21 | 1999-10-19 | Advanced Micro Devices, Inc. | High speed gate oxide protected level shifter |
| JP4113447B2 (ja) * | 2002-12-02 | 2008-07-09 | テクトロニクス・インターナショナル・セールス・ゲーエムベーハー | ジッタ付加回路及び方法並びにパルス列生成回路及び方法 |
| US20040217794A1 (en) * | 2003-04-30 | 2004-11-04 | Mark Strysko | Propagation delay adjustment circuit |
| DE10357495B4 (de) * | 2003-12-09 | 2005-11-10 | Infineon Technologies Ag | Pegelumsetzer mit zwei Umsetzerstufen |
| TW200525869A (en) * | 2004-01-28 | 2005-08-01 | Renesas Tech Corp | Switching power supply and semiconductor IC |
| US7535262B2 (en) * | 2004-10-19 | 2009-05-19 | International Rectifier Corporation | High voltage level shifting by capacitive coupling |
| DE102006037336B3 (de) * | 2006-08-10 | 2008-02-07 | Semikron Elektronik Gmbh & Co. Kg | Levelshifter für eine Ansteuerschaltung für Leistungshalbleiterbauelemente |
| EP1919082B1 (en) * | 2006-10-30 | 2009-12-02 | Infineon Technologies Austria AG | Circuit arrangement and methods for driving a high-side semiconductor switch |
| US7615934B2 (en) * | 2006-12-07 | 2009-11-10 | System General Corp. | High efficiency resonant ballast |
| US7639060B2 (en) * | 2007-03-20 | 2009-12-29 | Denso Corporation | Level shift circuit |
| US7741896B2 (en) | 2008-02-15 | 2010-06-22 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | High voltage drive circuit employing capacitive signal coupling and associated devices and methods |
| JP5417346B2 (ja) | 2008-02-28 | 2014-02-12 | ペレグリン セミコンダクター コーポレーション | 集積回路素子内でキャパシタをデジタル処理で同調するときに用いられる方法及び装置 |
| WO2009126930A2 (en) | 2008-04-11 | 2009-10-15 | Asic Advantage Inc. | Voltage level shifter |
| DE112009001632T5 (de) * | 2008-06-30 | 2011-05-05 | Monolithic Power Systems, Inc., SAN JOSE | Spannungswandler |
| US8212536B2 (en) * | 2009-12-23 | 2012-07-03 | R2 Semiconductor, Inc. | Stacked NMOS DC-to-DC power conversion |
| DE102010018997B4 (de) * | 2010-05-03 | 2013-04-04 | Semikron Elektronik Gmbh & Co. Kg | Ansteuerschaltung mit Übertragungsschaltung zur kapazitiven Übertragung eines Signals und zugeordnetes Verfahren |
| CN103425170A (zh) * | 2012-05-22 | 2013-12-04 | 联合聚晶股份有限公司 | 自适应负载变化的电源供应电路 |
| DE102012220213B3 (de) * | 2012-11-07 | 2014-05-22 | Semikron Elektronik Gmbh & Co. Kg | Ansteuerschaltung mit Übertragungsschaltung und Verfahren zum Betrieb |
| US9698728B2 (en) | 2012-12-13 | 2017-07-04 | Texas Instruments Incorporated | Digital isolator |
| KR101477377B1 (ko) * | 2013-03-20 | 2014-12-29 | 삼성전기주식회사 | 게이트 구동 장치 및 이를 갖는 인버터 |
| US9680380B2 (en) * | 2013-08-01 | 2017-06-13 | Hitachi, Ltd. | Semiconductor device and power conversion device |
| US9374006B2 (en) * | 2014-10-24 | 2016-06-21 | Edgar Abdoulin | Three-channel high-side gate driver having startup circuit and configurable outputs |
| US9912327B2 (en) * | 2015-03-18 | 2018-03-06 | Peregrine Semiconductor Corporation | Dead time control circuit for a level shifter |
| US9484897B2 (en) * | 2015-03-18 | 2016-11-01 | Peregrine Semiconductor Corporation | Level shifter |
| US9837325B2 (en) | 2015-06-16 | 2017-12-05 | Peregrine Semiconductor Corporation | Electrically testable microwave integrated circuit packaging |
| US9837412B2 (en) | 2015-12-09 | 2017-12-05 | Peregrine Semiconductor Corporation | S-contact for SOI |
| WO2017214289A1 (en) | 2016-06-07 | 2017-12-14 | Dermavant Sciences GmbH | Topical formulations of pde-4 inhibitors and their methods of use |
| US10116297B1 (en) | 2017-06-19 | 2018-10-30 | Psemi Corporation | DC-coupled high-voltage level shifter |
| US10348293B2 (en) | 2017-06-19 | 2019-07-09 | Psemi Corporation | Timing controller for dead-time control |
-
2017
- 2017-06-19 US US15/627,196 patent/US10116297B1/en active Active
-
2018
- 2018-06-18 DE DE112018003130.6T patent/DE112018003130T5/de not_active Withdrawn
- 2018-06-18 KR KR1020207000723A patent/KR102544761B1/ko active Active
- 2018-06-18 CN CN201880040651.XA patent/CN110771043B/zh active Active
- 2018-06-18 JP JP2020519020A patent/JP7155255B2/ja active Active
- 2018-06-18 WO PCT/US2018/038123 patent/WO2018236771A1/en not_active Ceased
-
2019
- 2019-11-20 US US16/689,916 patent/US10979042B2/en active Active
-
2021
- 2021-04-08 US US17/225,647 patent/US11658654B2/en active Active
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