JP2020519018A5 - - Google Patents

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Publication number
JP2020519018A5
JP2020519018A5 JP2019559058A JP2019559058A JP2020519018A5 JP 2020519018 A5 JP2020519018 A5 JP 2020519018A5 JP 2019559058 A JP2019559058 A JP 2019559058A JP 2019559058 A JP2019559058 A JP 2019559058A JP 2020519018 A5 JP2020519018 A5 JP 2020519018A5
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JP
Japan
Prior art keywords
high pressure
chamber
lift plate
pressure region
batch processing
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JP2019559058A
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English (en)
Japanese (ja)
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JP2020519018A (ja
JP7235678B2 (ja
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Priority claimed from PCT/US2018/028258 external-priority patent/WO2018204078A1/en
Publication of JP2020519018A publication Critical patent/JP2020519018A/ja
Publication of JP2020519018A5 publication Critical patent/JP2020519018A5/ja
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JP2019559058A 2017-05-01 2018-04-19 真空分離及び前処理環境を伴う高圧アニールチャンバ Active JP7235678B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762492700P 2017-05-01 2017-05-01
US62/492,700 2017-05-01
PCT/US2018/028258 WO2018204078A1 (en) 2017-05-01 2018-04-19 High pressure anneal chamber with vacuum isolation and pre-processing environment

Publications (3)

Publication Number Publication Date
JP2020519018A JP2020519018A (ja) 2020-06-25
JP2020519018A5 true JP2020519018A5 (enExample) 2021-05-27
JP7235678B2 JP7235678B2 (ja) 2023-03-08

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ID=63917378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019559058A Active JP7235678B2 (ja) 2017-05-01 2018-04-19 真空分離及び前処理環境を伴う高圧アニールチャンバ

Country Status (6)

Country Link
US (1) US20180315626A1 (enExample)
JP (1) JP7235678B2 (enExample)
KR (1) KR20190137935A (enExample)
CN (2) CN110574150B (enExample)
TW (1) TW201842590A (enExample)
WO (1) WO2018204078A1 (enExample)

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CN113614884B (zh) * 2019-03-22 2024-04-12 株式会社国际电气 基板处理装置、半导体装置的制造方法以及存储介质
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CN110133969B (zh) * 2019-04-26 2024-08-30 厦门通富微电子有限公司 一种用于烘烤光刻胶的烘烤设备、烘烤系统及烘烤方法
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TWI775691B (zh) * 2021-12-02 2022-08-21 奈盾科技股份有限公司 半導體缺陷修復的裝置及方法
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