JP2017505377A5 - - Google Patents

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Publication number
JP2017505377A5
JP2017505377A5 JP2016535118A JP2016535118A JP2017505377A5 JP 2017505377 A5 JP2017505377 A5 JP 2017505377A5 JP 2016535118 A JP2016535118 A JP 2016535118A JP 2016535118 A JP2016535118 A JP 2016535118A JP 2017505377 A5 JP2017505377 A5 JP 2017505377A5
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JP
Japan
Prior art keywords
chamber
inner volume
flow path
outlet
flow channel
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JP2016535118A
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English (en)
Japanese (ja)
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JP2017505377A (ja
JP6506757B2 (ja
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Priority claimed from PCT/US2014/068124 external-priority patent/WO2015084825A1/en
Publication of JP2017505377A publication Critical patent/JP2017505377A/ja
Publication of JP2017505377A5 publication Critical patent/JP2017505377A5/ja
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Publication of JP6506757B2 publication Critical patent/JP6506757B2/ja
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JP2016535118A 2013-12-02 2014-12-02 プロセスチャンバのインシトゥ洗浄のための方法および装置 Active JP6506757B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361910946P 2013-12-02 2013-12-02
US61/910,946 2013-12-02
PCT/US2014/068124 WO2015084825A1 (en) 2013-12-02 2014-12-02 Methods and apparatus for in-situ cleaning of a process chamber
US14/557,671 US9627185B2 (en) 2013-12-02 2014-12-02 Methods and apparatus for in-situ cleaning of a process chamber
US14/557,671 2014-12-02

Publications (3)

Publication Number Publication Date
JP2017505377A JP2017505377A (ja) 2017-02-16
JP2017505377A5 true JP2017505377A5 (enExample) 2018-01-25
JP6506757B2 JP6506757B2 (ja) 2019-04-24

Family

ID=53274025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016535118A Active JP6506757B2 (ja) 2013-12-02 2014-12-02 プロセスチャンバのインシトゥ洗浄のための方法および装置

Country Status (6)

Country Link
US (1) US9627185B2 (enExample)
EP (1) EP3077568B1 (enExample)
JP (1) JP6506757B2 (enExample)
KR (1) KR102357845B1 (enExample)
CN (2) CN105765103B (enExample)
WO (1) WO2015084825A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107452591A (zh) * 2017-05-25 2017-12-08 鲁汶仪器有限公司（比利时） 一种减少工艺腔体颗粒的系统和方法
CN107393801A (zh) * 2017-05-25 2017-11-24 鲁汶仪器有限公司（比利时） 一种减少下电极损伤的腔体清洗方法
CN107785222A (zh) * 2017-10-20 2018-03-09 上海华力微电子有限公司 一种避免腔体内部生成物堆积的装置
KR102534076B1 (ko) 2018-01-04 2023-05-19 삼성디스플레이 주식회사 증착 장치 및 증착 방법
JP7225599B2 (ja) * 2018-08-10 2023-02-21 東京エレクトロン株式会社 成膜装置
CN110899271B (zh) * 2018-09-17 2021-10-15 北京北方华创微电子装备有限公司 远程等离子源的调整装置及远程等离子源清洗系统
KR102636428B1 (ko) * 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
CN116145105A (zh) * 2021-11-22 2023-05-23 中芯国际集成电路制造(上海)有限公司 半导体制备装置
CN115318761B (zh) * 2022-08-16 2023-10-13 长鑫存储技术有限公司 腔室清洗方法
JP2025534443A (ja) * 2022-10-06 2025-10-15 ラム リサーチ コーポレーション 調節可能な台座
KR102834423B1 (ko) * 2023-09-12 2025-07-17 주식회사 테스 기판처리장치 및 세정유체 공급방법

Family Cites Families (23)

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JPH07111244A (ja) * 1993-10-13 1995-04-25 Mitsubishi Electric Corp 気相結晶成長装置
JP3247270B2 (ja) * 1994-08-25 2002-01-15 東京エレクトロン株式会社 処理装置及びドライクリーニング方法
JP2845163B2 (ja) * 1994-10-27 1999-01-13 日本電気株式会社 プラズマ処理方法及びその装置
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
US6060397A (en) * 1995-07-14 2000-05-09 Applied Materials, Inc. Gas chemistry for improved in-situ cleaning of residue for a CVD apparatus
US5756400A (en) * 1995-12-08 1998-05-26 Applied Materials, Inc. Method and apparatus for cleaning by-products from plasma chamber surfaces
US5988187A (en) 1996-07-09 1999-11-23 Lam Research Corporation Chemical vapor deposition system with a plasma chamber having separate process gas and cleaning gas injection ports
US7515264B2 (en) * 1999-06-15 2009-04-07 Tokyo Electron Limited Particle-measuring system and particle-measuring method
JP4663059B2 (ja) 2000-03-10 2011-03-30 東京エレクトロン株式会社 処理装置のクリーニング方法
JP4754080B2 (ja) * 2001-03-14 2011-08-24 東京エレクトロン株式会社 基板処理装置のクリーニング方法及び基板処理装置
KR20030012565A (ko) * 2001-08-01 2003-02-12 나기창 플라즈마를 이용한 반도체 웨이퍼 클리닝 장치
KR100956189B1 (ko) * 2001-10-26 2010-05-04 어플라이드 머티어리얼스, 인코포레이티드 원자층 증착용 가스 전달 장치
JP2003197615A (ja) * 2001-12-26 2003-07-11 Tokyo Electron Ltd プラズマ処理装置およびそのクリーニング方法
JP4355321B2 (ja) * 2005-03-04 2009-10-28 株式会社ニューフレアテクノロジー 気相成長装置
US20070080141A1 (en) * 2005-10-07 2007-04-12 Applied Materials, Inc. Low-voltage inductively coupled source for plasma processing
US8440049B2 (en) * 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
US7476291B2 (en) * 2006-09-28 2009-01-13 Lam Research Corporation High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation
US20080118663A1 (en) * 2006-10-12 2008-05-22 Applied Materials, Inc. Contamination reducing liner for inductively coupled chamber
US20090114245A1 (en) 2007-11-02 2009-05-07 Hidehiro Kojiri In-situ chamber cleaning method
JP5820143B2 (ja) * 2010-06-22 2015-11-24 株式会社ニューフレアテクノロジー 半導体製造装置、半導体製造方法及び半導体製造装置のクリーニング方法
WO2012017717A1 (ja) * 2010-08-06 2012-02-09 三菱重工業株式会社 真空処理装置及びプラズマ処理方法
US20130239988A1 (en) * 2010-08-25 2013-09-19 Jean-Charles Cigal Deposition chamber cleaning using in situ activation of molecular fluorine
CN102899636B (zh) * 2012-09-26 2015-12-09 中微半导体设备(上海)有限公司 一种原位清洁mocvd反应腔室的方法

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