KR102357845B1 - 프로세스 챔버의 인-시츄 세정을 위한 방법들 및 장치 - Google Patents

프로세스 챔버의 인-시츄 세정을 위한 방법들 및 장치 Download PDF

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KR102357845B1
KR102357845B1 KR1020167017761A KR20167017761A KR102357845B1 KR 102357845 B1 KR102357845 B1 KR 102357845B1 KR 1020167017761 A KR1020167017761 A KR 1020167017761A KR 20167017761 A KR20167017761 A KR 20167017761A KR 102357845 B1 KR102357845 B1 KR 102357845B1
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chamber
inner volume
flow path
outlet
cleaning
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KR20160094424A (ko
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조엘 엠. 휴스턴
니콜라스 알. 테니
치엔-테흐 카오
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어플라이드 머티어리얼스, 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H01L21/67017—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020167017761A 2013-12-02 2014-12-02 프로세스 챔버의 인-시츄 세정을 위한 방법들 및 장치 Active KR102357845B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361910946P 2013-12-02 2013-12-02
US61/910,946 2013-12-02
US14/557,671 2014-12-02
US14/557,671 US9627185B2 (en) 2013-12-02 2014-12-02 Methods and apparatus for in-situ cleaning of a process chamber
PCT/US2014/068124 WO2015084825A1 (en) 2013-12-02 2014-12-02 Methods and apparatus for in-situ cleaning of a process chamber

Publications (2)

Publication Number Publication Date
KR20160094424A KR20160094424A (ko) 2016-08-09
KR102357845B1 true KR102357845B1 (ko) 2022-01-28

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KR1020167017761A Active KR102357845B1 (ko) 2013-12-02 2014-12-02 프로세스 챔버의 인-시츄 세정을 위한 방법들 및 장치

Country Status (6)

Country Link
US (1) US9627185B2 (enExample)
EP (1) EP3077568B1 (enExample)
JP (1) JP6506757B2 (enExample)
KR (1) KR102357845B1 (enExample)
CN (2) CN109585248B (enExample)
WO (1) WO2015084825A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107452591A (zh) * 2017-05-25 2017-12-08 鲁汶仪器有限公司（比利时） 一种减少工艺腔体颗粒的系统和方法
CN107393801A (zh) * 2017-05-25 2017-11-24 鲁汶仪器有限公司（比利时） 一种减少下电极损伤的腔体清洗方法
CN107785222A (zh) * 2017-10-20 2018-03-09 上海华力微电子有限公司 一种避免腔体内部生成物堆积的装置
KR102534076B1 (ko) 2018-01-04 2023-05-19 삼성디스플레이 주식회사 증착 장치 및 증착 방법
JP7225599B2 (ja) * 2018-08-10 2023-02-21 東京エレクトロン株式会社 成膜装置
CN110899271B (zh) * 2018-09-17 2021-10-15 北京北方华创微电子装备有限公司 远程等离子源的调整装置及远程等离子源清洗系统
KR102636428B1 (ko) * 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
KR102910998B1 (ko) * 2021-09-02 2026-01-13 주식회사 원익아이피에스 기판처리장치
CN116145105A (zh) * 2021-11-22 2023-05-23 中芯国际集成电路制造(上海)有限公司 半导体制备装置
CN115318761B (zh) * 2022-08-16 2023-10-13 长鑫存储技术有限公司 腔室清洗方法
JP2025534443A (ja) * 2022-10-06 2025-10-15 ラム リサーチ コーポレーション 調節可能な台座
KR102834423B1 (ko) * 2023-09-12 2025-07-17 주식회사 테스 기판처리장치 및 세정유체 공급방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197615A (ja) 2001-12-26 2003-07-11 Tokyo Electron Ltd プラズマ処理装置およびそのクリーニング方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07111244A (ja) * 1993-10-13 1995-04-25 Mitsubishi Electric Corp 気相結晶成長装置
JP3247270B2 (ja) * 1994-08-25 2002-01-15 東京エレクトロン株式会社 処理装置及びドライクリーニング方法
JP2845163B2 (ja) * 1994-10-27 1999-01-13 日本電気株式会社 プラズマ処理方法及びその装置
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
US6060397A (en) 1995-07-14 2000-05-09 Applied Materials, Inc. Gas chemistry for improved in-situ cleaning of residue for a CVD apparatus
US5756400A (en) 1995-12-08 1998-05-26 Applied Materials, Inc. Method and apparatus for cleaning by-products from plasma chamber surfaces
US5988187A (en) 1996-07-09 1999-11-23 Lam Research Corporation Chemical vapor deposition system with a plasma chamber having separate process gas and cleaning gas injection ports
US7515264B2 (en) * 1999-06-15 2009-04-07 Tokyo Electron Limited Particle-measuring system and particle-measuring method
JP4663059B2 (ja) * 2000-03-10 2011-03-30 東京エレクトロン株式会社 処理装置のクリーニング方法
JP4754080B2 (ja) * 2001-03-14 2011-08-24 東京エレクトロン株式会社 基板処理装置のクリーニング方法及び基板処理装置
KR20030012565A (ko) * 2001-08-01 2003-02-12 나기창 플라즈마를 이용한 반도체 웨이퍼 클리닝 장치
KR100956189B1 (ko) * 2001-10-26 2010-05-04 어플라이드 머티어리얼스, 인코포레이티드 원자층 증착용 가스 전달 장치
JP4355321B2 (ja) * 2005-03-04 2009-10-28 株式会社ニューフレアテクノロジー 気相成長装置
US20070080141A1 (en) * 2005-10-07 2007-04-12 Applied Materials, Inc. Low-voltage inductively coupled source for plasma processing
US8440049B2 (en) * 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
US7476291B2 (en) * 2006-09-28 2009-01-13 Lam Research Corporation High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation
US20080118663A1 (en) * 2006-10-12 2008-05-22 Applied Materials, Inc. Contamination reducing liner for inductively coupled chamber
US20090114245A1 (en) 2007-11-02 2009-05-07 Hidehiro Kojiri In-situ chamber cleaning method
JP5820143B2 (ja) * 2010-06-22 2015-11-24 株式会社ニューフレアテクノロジー 半導体製造装置、半導体製造方法及び半導体製造装置のクリーニング方法
CN102959125B (zh) * 2010-08-06 2015-03-04 三菱重工业株式会社 真空处理装置及等离子体处理方法
EP2608899A4 (en) * 2010-08-25 2016-04-20 Linde Ag SEPARATION CHAMBER CLEANING BY ON-LINE ACTIVATION OF MOLECULAR FLUOR
CN102899636B (zh) * 2012-09-26 2015-12-09 中微半导体设备(上海)有限公司 一种原位清洁mocvd反应腔室的方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197615A (ja) 2001-12-26 2003-07-11 Tokyo Electron Ltd プラズマ処理装置およびそのクリーニング方法

Also Published As

Publication number Publication date
JP6506757B2 (ja) 2019-04-24
EP3077568A1 (en) 2016-10-12
CN109585248A (zh) 2019-04-05
EP3077568A4 (en) 2017-08-30
CN109585248B (zh) 2021-04-20
CN105765103A (zh) 2016-07-13
WO2015084825A1 (en) 2015-06-11
CN105765103B (zh) 2018-09-25
KR20160094424A (ko) 2016-08-09
JP2017505377A (ja) 2017-02-16
US20150155142A1 (en) 2015-06-04
US9627185B2 (en) 2017-04-18
EP3077568B1 (en) 2019-02-20

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