WO2018204078A1 - High pressure anneal chamber with vacuum isolation and pre-processing environment - Google Patents

High pressure anneal chamber with vacuum isolation and pre-processing environment Download PDF

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Publication number
WO2018204078A1
WO2018204078A1 PCT/US2018/028258 US2018028258W WO2018204078A1 WO 2018204078 A1 WO2018204078 A1 WO 2018204078A1 US 2018028258 W US2018028258 W US 2018028258W WO 2018204078 A1 WO2018204078 A1 WO 2018204078A1
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WIPO (PCT)
Prior art keywords
chamber
disposed
shell
lift plate
inner chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2018/028258
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English (en)
French (fr)
Inventor
Timothy Joseph Franklin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
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Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN201880028790.0A priority Critical patent/CN110574150B/zh
Priority to JP2019559058A priority patent/JP7235678B2/ja
Priority to KR1020197035331A priority patent/KR20190137935A/ko
Priority to CN202310566128.3A priority patent/CN116504679A/zh
Publication of WO2018204078A1 publication Critical patent/WO2018204078A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/4411—Cooling of the reaction chamber walls
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16J—PISTONS; CYLINDERS; SEALINGS
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    • F16J15/002—Sealings comprising at least two sealings in succession
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
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    • F16J15/02—Sealings between relatively-stationary surfaces
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
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    • F16J15/061—Sealings between relatively-stationary surfaces with solid packing compressed between sealing surfaces with positioning means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
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    • F16J15/062—Sealings between relatively-stationary surfaces with solid packing compressed between sealing surfaces characterised by the geometry of the seat
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    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Definitions

  • Embodiments of the disclosure generally relate to a method and apparatus for filling gaps and trenches on a substrate and tools for batch annealing substrates.
  • Embodiments of the disclosure generally relate to a method and apparatus for filling gaps and trenches on a substrate and tools for batch annealing substrates.
  • a batch processing chamber includes a lower shell, a substrate transfer port formed through the lower shell, an upper shell disposed on the lower shell, an inner shell disposed within the upper shell, a heater operational to heat the inner shell, a lift plate moveably disposed within the lower shell, a cassette disposed on the lift plate and configured to hold a plurality of substrates within the inner chamber, and an injection port.
  • the inner shell and upper shell bound an outer chamber while the inner shell and the lower shell bound an inner chamber thai is isolated from the outer chamber.
  • the injection port is configured to introduce a fluid into the inner chamber.
  • Figure 4 is a simplified front cross-sectional view of a cassette with a plurality of substrates disposed on a plurality of substrate storage slots.
  • Figure 5 is a schematic view of a substrate prior to processing in the batch processing chamber.
  • FIG. 1 is a simplified front cross-sectional view of the batch processing chamber.
  • the batch processing chamber 00 has an upper shell 112 disposed on a lower shell 114.
  • An inner shell 13 is disposed within the upper shell 112 such that an outer chamber 1 10 and an inner chamber 120 are formed.
  • the inner shell 113 and the upper shell 1 12 bound the outer chamber 1 10.
  • the inner shell 1 13 and the lower shell 1 14 bound the inner chamber 120.
  • the outer chamber 110 is isolated from the inner chamber 120.
  • a bottom plate 170 is coupled to the bottom surface of the lower shell 1 14.
  • the inner chamber 120 has a high-pressure region 115 and a low-pressure region 117.
  • One or more heaters 122 are disposed within the outer chamber 1 10. As further discussed below, the environment within the outer chamber 1 10 is maintained at a vacuum to improve the performance of the heaters 122. In the embodiment shown in Figure 1 , the heaters 122 are coupled to the inner shell 1 13. In other embodiments, the heaters 122 may be coupled to the upper shell 1 12. The heaters 122 are operable such that when the heaters 122 are turned on, the heaters 122 are able to heat the inner shell 113 and thus, also heat the high-pressure region 1 5 within the inner chamber 120.
  • the heaters 122 may be a resistive coil, a lamp, a ceramic heater, a graphite-based carbon fiber composite (CFC) heater, a stainless steel heater or an aluminum heater. Power to the heaters 122 is controlled by a controller 180 through feedback received from sensors (not shown), monitoring the temperature of the inner chamber 120.
  • CFC graphite-based carbon fiber composite
  • the lifting mechanism 178 raises the lift plate 140 to seal the high-pressure region 15.
  • the lift plate 140 and lifting mechanism 178 are configured to function against a high pressure, for example pressures of about 50 bars, which acts representatively downward in the high-pressure region 1 15 of the inner chamber 120 when the lift plate 140 is in a raised position.
  • the lifting mechanism 178 lowers the lift plate 140 to allow fluid communication between the high-pressure region 1 15 and the low- pressure region 17, and to facilitate substrate transfer into and out of the batch processing chamber 100.
  • the operation of the lifting mechanism 78 is controlled by the controller 180,
  • the flowable material 558 may be a dielectric material such as silicon carbide (SiC), silicon oxide (SiO), silicon carbon nitride (SiCN), silicon dioxide (S1O 2 ), silicon oxycarbide (SiOC), silicon carbon oxynitride (SiOCN), silicon oxynitride (SiON) and/or silico nitride (SiN).
  • the flowable material 558 may be deposited using a high-density plasma CVD system, a plasma enhanced CVD system, and/or a sub-atmospheric CVD system, among other systems.
  • the controller 180 controls the operation of the batch processing chamber 100 as well as the remote plasma source 190.
  • the controller 180 is communicatively connected to the fluid source 131 and sensors (not shown) measuring various parameters of the inner chamber 120 by connecting wires 181 and 183 respectively.
  • the controller 180 is communicatively connected to the pump 125 and the vent valve 126 by connecting wires 185 and 187 respectively.
  • the controller 180 is communicatively connected to the lifting mechanism 178 and the remote plasma source 190 by connectors 188 and 189 respectively.
  • the controller 180 includes a central processing unit (CPU) 182, a memory 184, and a support circuit 186.
  • the CPU 182 may be any form of general purpose computer processor that may be used in an industrial setting.
  • the heating element 145 interfaced with the lift plate 140 is also operated at least during a pre-processing stage to heat the cassette 150 such that the substrates 155 being loaded onto the cassette 150 are preheated prior to being elevated into the high-pressure region 1 15.
  • the door 180 to the substrate transfer port 18 is then opened to load a plurality of substrates 155 on the cassette 150 through the substrate transfer port 1 18.
  • the substrates 155 have the flowable material 558 deposited thereon as shown in Figure 5.
  • the door 160 to the substrate transfer port 118 is closed.
  • the vacuum seals 162 ensure that there is no leakage of air into the inner chamber 120 once the door 160 is closed.
  • a fluid may be introduced into the inner chamber 120 through the injection port 134 for wetting the substrates 155.
  • the wetting agent may be a surfactant. The wetting agent provides better interaction between the processing fluid and the substrates 155 disposed in the cassette 150 during processing.
  • the lift plate 140 and the cassette 150 disposed thereon are lowered to allow substrate transfer out of the batch processing chamber 100. While the lift plate 140 is lowered, the high-pressure region 15 and the low- pressure region 1 17 are placed in fluid communication. Since both the high- pressure region 115 and the low-pressure region 117 are now at a vacuum condition, the processed substrates 155 can be removed from the batch processing chamber 00 through the substrate transfer port 18,
  • FIG. 7 is a block diagram of a method for processing a plurality of substrates disposed in a batch processing chamber, according to another embodiment of the present disclosure.
  • the method 700 begins at block 710 by loading a cassette disposed on a lift plate with a plurality of substrates.
  • One or more of the substrates has a flowable material exposed on an exterior surface of the substrate.
  • the cassette and the lift plate are disposed in an inner chamber of the batch processing chamber, which is maintained in vacuum.
  • the outer chamber disposed within the batch processing chamber and partially surrounding a high-pressure region of the inner chamber is maintained at a vacuum condition, in some embodiments, the substrates are loaded onto the cassette through a substrate transfer port connected to the inner chamber.
  • the cassette has a plurality of substrate storage slots for accommodating the plurality of substrates.
  • Each substrate storage slot on the cassette is indexed to align with the substrate transfer port in order to load a substrate thereon.
  • the lift plate and cassette may be pre-heated to start increasing the temperature of the substrates loaded onto the cassette to reduce processing time.
  • a wetting agent may optionally be introduced into the inner chamber through the injection port to wet the substrates prior to processing in the high-pressure region.
  • the outer chamber disposed around the high-pressure region of the inner chamber and continually maintained in vacuum, additionally functions as a safety containment between the processing environment of the high-pressure region inside the inner chamber and the atmosphere outside the batch processing chamber in order to prevent any leakage of air into the processing environment or loss of processing fluid into the atmosphere outside the chamber. Further, since the outer chamber is maintained in vacuum and isolated from the atmosphere outside the batch processing chamber, the outer chamber offers flexibility in the choice of heaters that are installed in the outer chamber and configured to heat the inner chamber. Thus, heaters that work more effectively under vacuum conditions may be utilized.

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PCT/US2018/028258 2017-05-01 2018-04-19 High pressure anneal chamber with vacuum isolation and pre-processing environment Ceased WO2018204078A1 (en)

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KR1020197035331A KR20190137935A (ko) 2017-05-01 2018-04-19 진공 격리 및 사전-프로세싱 환경을 갖는 고압 어닐링 챔버
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CN110574150B (zh) 2023-09-19
TW201842590A (zh) 2018-12-01
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KR20190137935A (ko) 2019-12-11
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