JP2019517736A5 - - Google Patents

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Publication number
JP2019517736A5
JP2019517736A5 JP2018562373A JP2018562373A JP2019517736A5 JP 2019517736 A5 JP2019517736 A5 JP 2019517736A5 JP 2018562373 A JP2018562373 A JP 2018562373A JP 2018562373 A JP2018562373 A JP 2018562373A JP 2019517736 A5 JP2019517736 A5 JP 2019517736A5
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JP
Japan
Prior art keywords
chamber
coupled
transfer
plasma cleaning
processing system
Prior art date
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Application number
JP2018562373A
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English (en)
Japanese (ja)
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JP7190905B2 (ja
JP2019517736A (ja
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Publication date
Priority claimed from US15/499,100 external-priority patent/US20170350038A1/en
Application filed filed Critical
Priority claimed from PCT/US2017/031590 external-priority patent/WO2017209900A1/en
Publication of JP2019517736A publication Critical patent/JP2019517736A/ja
Publication of JP2019517736A5 publication Critical patent/JP2019517736A5/ja
Application granted granted Critical
Publication of JP7190905B2 publication Critical patent/JP7190905B2/ja
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JP2018562373A 2016-06-03 2017-05-08 半導体基板から炭素汚染物質及び表面酸化物を除去するための処理チャンバを有する真空プラットフォーム Active JP7190905B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201662345160P 2016-06-03 2016-06-03
US62/345,160 2016-06-03
US201762491143P 2017-04-27 2017-04-27
US62/491,143 2017-04-27
US15/499,100 2017-04-27
US15/499,100 US20170350038A1 (en) 2016-06-03 2017-04-27 Vacuum platform with process chambers for removing carbon contaminants and surface oxide from semiconductor substrates
PCT/US2017/031590 WO2017209900A1 (en) 2016-06-03 2017-05-08 A vacuum platform with process chambers for removing carbon contaminants and surface oxide from semiconductor substrates

Publications (3)

Publication Number Publication Date
JP2019517736A JP2019517736A (ja) 2019-06-24
JP2019517736A5 true JP2019517736A5 (enExample) 2020-06-18
JP7190905B2 JP7190905B2 (ja) 2022-12-16

Family

ID=61725115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018562373A Active JP7190905B2 (ja) 2016-06-03 2017-05-08 半導体基板から炭素汚染物質及び表面酸化物を除去するための処理チャンバを有する真空プラットフォーム

Country Status (3)

Country Link
JP (1) JP7190905B2 (enExample)
KR (1) KR102196746B1 (enExample)
TW (1) TWI703665B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7114384B2 (ja) * 2018-07-26 2022-08-08 株式会社アルバック 酸化膜除去方法、および、酸化膜除去装置
US20200411342A1 (en) * 2019-06-27 2020-12-31 Applied Materials, Inc. Beamline architecture with integrated plasma processing

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070020890A1 (en) 2005-07-19 2007-01-25 Applied Materials, Inc. Method and apparatus for semiconductor processing
US7658802B2 (en) * 2005-11-22 2010-02-09 Applied Materials, Inc. Apparatus and a method for cleaning a dielectric film
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
KR101895307B1 (ko) 2011-03-01 2018-10-04 어플라이드 머티어리얼스, 인코포레이티드 듀얼 로드락 구성의 저감 및 스트립 프로세스 챔버
US9683308B2 (en) * 2013-08-09 2017-06-20 Applied Materials, Inc. Method and apparatus for precleaning a substrate surface prior to epitaxial growth
JP2017504955A (ja) 2013-11-06 2017-02-09 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｄｃバイアス変調による、粒子発生抑制装置
TWI643971B (zh) * 2014-01-05 2018-12-11 美商應用材料股份有限公司 使用空間原子層沉積或脈衝化學氣相沉積之薄膜沉積
US9508561B2 (en) 2014-03-11 2016-11-29 Applied Materials, Inc. Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications

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