KR102196746B1 - 반도체 기판들에서 탄소 오염물질들 및 표면 산화물을 제거하기 위한 프로세스 챔버들을 갖는 진공 플랫폼 - Google Patents

반도체 기판들에서 탄소 오염물질들 및 표면 산화물을 제거하기 위한 프로세스 챔버들을 갖는 진공 플랫폼 Download PDF

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Publication number
KR102196746B1
KR102196746B1 KR1020197000133A KR20197000133A KR102196746B1 KR 102196746 B1 KR102196746 B1 KR 102196746B1 KR 1020197000133 A KR1020197000133 A KR 1020197000133A KR 20197000133 A KR20197000133 A KR 20197000133A KR 102196746 B1 KR102196746 B1 KR 102196746B1
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South Korea
Prior art keywords
chamber
transfer
substrate
coupled
transfer chamber
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English (en)
Korean (ko)
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KR20190016537A (ko
Inventor
킨 퐁 로
슈베르트 에스. 추
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Priority claimed from US15/499,100 external-priority patent/US20170350038A1/en
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Priority claimed from PCT/US2017/031590 external-priority patent/WO2017209900A1/en
Publication of KR20190016537A publication Critical patent/KR20190016537A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020197000133A 2016-06-03 2017-05-08 반도체 기판들에서 탄소 오염물질들 및 표면 산화물을 제거하기 위한 프로세스 챔버들을 갖는 진공 플랫폼 Active KR102196746B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201662345160P 2016-06-03 2016-06-03
US62/345,160 2016-06-03
US201762491143P 2017-04-27 2017-04-27
US62/491,143 2017-04-27
US15/499,100 2017-04-27
US15/499,100 US20170350038A1 (en) 2016-06-03 2017-04-27 Vacuum platform with process chambers for removing carbon contaminants and surface oxide from semiconductor substrates
PCT/US2017/031590 WO2017209900A1 (en) 2016-06-03 2017-05-08 A vacuum platform with process chambers for removing carbon contaminants and surface oxide from semiconductor substrates

Publications (2)

Publication Number Publication Date
KR20190016537A KR20190016537A (ko) 2019-02-18
KR102196746B1 true KR102196746B1 (ko) 2020-12-30

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KR1020197000133A Active KR102196746B1 (ko) 2016-06-03 2017-05-08 반도체 기판들에서 탄소 오염물질들 및 표면 산화물을 제거하기 위한 프로세스 챔버들을 갖는 진공 플랫폼

Country Status (3)

Country Link
JP (1) JP7190905B2 (enExample)
KR (1) KR102196746B1 (enExample)
TW (1) TWI703665B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7114384B2 (ja) * 2018-07-26 2022-08-08 株式会社アルバック 酸化膜除去方法、および、酸化膜除去装置
US20200411342A1 (en) * 2019-06-27 2020-12-31 Applied Materials, Inc. Beamline architecture with integrated plasma processing

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070020890A1 (en) 2005-07-19 2007-01-25 Applied Materials, Inc. Method and apparatus for semiconductor processing
US7658802B2 (en) * 2005-11-22 2010-02-09 Applied Materials, Inc. Apparatus and a method for cleaning a dielectric film
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
JP6114698B2 (ja) 2011-03-01 2017-04-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ デュアルロードロック構成内の除害及びストリップ処理チャンバ
JP6637420B2 (ja) 2013-08-09 2020-01-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エピタキシャル成長に先立って基板表面を予洗浄するための方法及び装置
CN108922844A (zh) 2013-11-06 2018-11-30 应用材料公司 通过dc偏压调制的颗粒产生抑制器
TWI643971B (zh) * 2014-01-05 2018-12-11 美商應用材料股份有限公司 使用空間原子層沉積或脈衝化學氣相沉積之薄膜沉積
US9508561B2 (en) 2014-03-11 2016-11-29 Applied Materials, Inc. Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications

Also Published As

Publication number Publication date
JP7190905B2 (ja) 2022-12-16
TW201801232A (zh) 2018-01-01
JP2019517736A (ja) 2019-06-24
KR20190016537A (ko) 2019-02-18
TWI703665B (zh) 2020-09-01

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