JP2017522718A5 - - Google Patents

Download PDF

Info

Publication number
JP2017522718A5
JP2017522718A5 JP2016567489A JP2016567489A JP2017522718A5 JP 2017522718 A5 JP2017522718 A5 JP 2017522718A5 JP 2016567489 A JP2016567489 A JP 2016567489A JP 2016567489 A JP2016567489 A JP 2016567489A JP 2017522718 A5 JP2017522718 A5 JP 2017522718A5
Authority
JP
Japan
Prior art keywords
processing chamber
sub
substrate
batch processing
loading opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016567489A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017522718A (ja
JP6592012B2 (ja
Filing date
Publication date
Priority claimed from US14/577,828 external-priority patent/US10113236B2/en
Application filed filed Critical
Publication of JP2017522718A publication Critical patent/JP2017522718A/ja
Publication of JP2017522718A5 publication Critical patent/JP2017522718A5/ja
Priority to JP2019169941A priority Critical patent/JP6928043B2/ja
Application granted granted Critical
Publication of JP6592012B2 publication Critical patent/JP6592012B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2016567489A 2014-05-14 2015-04-21 ガス分配及び個別のポンピングを伴うバッチ硬化チャンバ Active JP6592012B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2019169941A JP6928043B2 (ja) 2014-05-14 2019-09-19 ガス分配及び個別のポンピングを伴うバッチ硬化チャンバ

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461996817P 2014-05-14 2014-05-14
US61/996,817 2014-05-14
US14/577,828 2014-12-19
US14/577,828 US10113236B2 (en) 2014-05-14 2014-12-19 Batch curing chamber with gas distribution and individual pumping
PCT/US2015/026937 WO2015175175A1 (en) 2014-05-14 2015-04-21 Batch curing chamber with gas distribution and individual pumping

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019169941A Division JP6928043B2 (ja) 2014-05-14 2019-09-19 ガス分配及び個別のポンピングを伴うバッチ硬化チャンバ

Publications (3)

Publication Number Publication Date
JP2017522718A JP2017522718A (ja) 2017-08-10
JP2017522718A5 true JP2017522718A5 (enExample) 2018-06-07
JP6592012B2 JP6592012B2 (ja) 2019-10-16

Family

ID=54480423

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016567489A Active JP6592012B2 (ja) 2014-05-14 2015-04-21 ガス分配及び個別のポンピングを伴うバッチ硬化チャンバ
JP2019169941A Active JP6928043B2 (ja) 2014-05-14 2019-09-19 ガス分配及び個別のポンピングを伴うバッチ硬化チャンバ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2019169941A Active JP6928043B2 (ja) 2014-05-14 2019-09-19 ガス分配及び個別のポンピングを伴うバッチ硬化チャンバ

Country Status (5)

Country Link
US (3) US10113236B2 (enExample)
JP (2) JP6592012B2 (enExample)
KR (3) KR102407734B1 (enExample)
CN (3) CN106463362B (enExample)
WO (1) WO2015175175A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9226407B2 (en) * 2002-07-01 2015-12-29 Semigear Inc Reflow treating unit and substrate treating apparatus
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11482434B2 (en) 2016-10-18 2022-10-25 Belting E-Town Semiconductor Technology Co., Ltd Systems and methods for workpiece processing
US10840068B2 (en) * 2017-02-15 2020-11-17 Yield Engineering Systems, Inc. Plasma spreading apparatus and method of spreading plasma in process ovens
US11631581B2 (en) * 2017-04-17 2023-04-18 Tokyo Electron Limited Insulating film forming method, insulating film forming device, and substrate processing system
WO2018212999A1 (en) * 2017-05-13 2018-11-22 Applied Materials, Inc. Cyclic flowable deposition and high-density plasma treatment proceses for high quality gap fill solutions
KR102405723B1 (ko) * 2017-08-18 2022-06-07 어플라이드 머티어리얼스, 인코포레이티드 고압 및 고온 어닐링 챔버
US10872762B2 (en) * 2017-11-08 2020-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming silicon oxide layer and semiconductor structure
US11101163B2 (en) * 2018-01-30 2021-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for automated robotic arm sensing
US10734219B2 (en) * 2018-09-26 2020-08-04 Asm Ip Holdings B.V. Plasma film forming method
US20210013069A1 (en) * 2019-07-12 2021-01-14 Applied Materials, Inc. Multi-lid structure for semiconductor processing system
JP7333762B2 (ja) * 2020-02-05 2023-08-25 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US11901222B2 (en) * 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
JP7156332B2 (ja) * 2020-05-21 2022-10-19 株式会社安川電機 搬送装置、搬送方法および搬送システム
KR102749186B1 (ko) * 2020-07-15 2025-01-06 세메스 주식회사 기판 처리 장치
JP7747470B2 (ja) * 2021-09-06 2025-10-01 キヤノントッキ株式会社 成膜装置、基板搬送装置、基板搬送方法及び電子デバイスの製造方法
KR102940127B1 (ko) 2021-09-28 2026-03-16 삼성전자주식회사 로드락 장치 및 이를 포함하는 기판 처리 장치
US12518979B2 (en) * 2022-07-19 2026-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Exhaust manifold for semiconductor process chamber
US20240112931A1 (en) * 2022-10-03 2024-04-04 Applied Materials, Inc. Cassette structures and related methods for batch processing in epitaxial deposition operations
US20240120220A1 (en) * 2022-10-06 2024-04-11 Applied Materials, Inc. Load lock chambers and related methods and structures for batch cooling or heating
TW202512812A (zh) * 2023-09-07 2025-03-16 聯華電子股份有限公司 矽穿孔結構及其製作方法
US12497693B2 (en) * 2024-03-27 2025-12-16 Applied Materials, Inc. Modular flow chamber kits, processing chambers, and related apparatus and methods applicable for semiconductor manufacturing
CN120291061B (zh) * 2025-06-09 2025-08-26 蓝河科技(绍兴)有限公司 气体分配装置和半导体设备

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264393A (en) * 1977-10-31 1981-04-28 Motorola, Inc. Reactor apparatus for plasma etching or deposition
CH687987A5 (de) * 1993-05-03 1997-04-15 Balzers Hochvakuum Verfahren zur Erhoehung der Beschichtungsrate in einem Plasmaentladungsraum und Plasmakammer.
US6296735B1 (en) * 1993-05-03 2001-10-02 Unaxis Balzers Aktiengesellschaft Plasma treatment apparatus and method for operation same
JPH07297194A (ja) * 1994-04-25 1995-11-10 Sony Corp マルチチャンバー装置及び半導体装置の製造方法
JP3421483B2 (ja) * 1995-08-25 2003-06-30 株式会社東芝 半導体装置の製造方法
US5879459A (en) * 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
US6610150B1 (en) 1999-04-02 2003-08-26 Asml Us, Inc. Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system
JP5021112B2 (ja) 2000-08-11 2012-09-05 キヤノンアネルバ株式会社 真空処理装置
US7256370B2 (en) * 2002-03-15 2007-08-14 Steed Technology, Inc. Vacuum thermal annealer
KR100491161B1 (ko) * 2002-11-26 2005-05-24 주식회사 테라세미콘 반도체 제조장치
WO2004074932A2 (en) * 2003-02-14 2004-09-02 Applied Materials, Inc. Method and apparatus for cleaning of native oxides with hydroge-containing radicals
JP4319434B2 (ja) * 2003-03-11 2009-08-26 東京エレクトロン株式会社 ゲートバルブ及び真空容器
JP2008521261A (ja) 2004-11-22 2008-06-19 アプライド マテリアルズ インコーポレイテッド バッチ処理チャンバを用いた基板処理装置
US20070084408A1 (en) 2005-10-13 2007-04-19 Applied Materials, Inc. Batch processing chamber with diffuser plate and injector assembly
US20070209593A1 (en) * 2006-03-07 2007-09-13 Ravinder Aggarwal Semiconductor wafer cooling device
WO2008004278A1 (fr) * 2006-07-04 2008-01-10 Toshiba Mitsubishi-Electric Industrial Systems Corporation Procédé et dispositif de concentration / dilution de gaz spécifique
US20090016853A1 (en) * 2007-07-09 2009-01-15 Woo Sik Yoo In-line wafer robotic processing system
JP2010047818A (ja) * 2008-08-25 2010-03-04 Toshiba Corp 半導体製造装置および半導体製造方法
KR101458195B1 (ko) 2009-09-25 2014-11-05 주식회사 티지오테크 배치식 에피택셜층 형성장치 및 그 형성방법
US8524004B2 (en) * 2010-06-16 2013-09-03 Applied Materials, Inc. Loadlock batch ozone cure
KR101223489B1 (ko) * 2010-06-30 2013-01-17 삼성디스플레이 주식회사 기판 가공 장치
US9285168B2 (en) 2010-10-05 2016-03-15 Applied Materials, Inc. Module for ozone cure and post-cure moisture treatment
KR101528138B1 (ko) * 2011-01-18 2015-06-12 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치, 기판 지지구 및 반도체 장치의 제조 방법
WO2012138866A1 (en) * 2011-04-08 2012-10-11 Applied Materials, Inc. Apparatus and method for uv treatment, chemical treatment, and deposition
US20140256152A1 (en) * 2011-10-11 2014-09-11 Hitachi Kokusai Electric Inc. Substrate processing apparatus, substrate processing method, method of manufacturing semiconductor device and recording medium
WO2013173999A1 (en) * 2012-05-24 2013-11-28 Acm Research (Shanghai) Inc. Loadlock chamber and method for treating substrates using the same
JP5977274B2 (ja) * 2013-03-21 2016-08-24 東京エレクトロン株式会社 バッチ式縦型基板処理装置および基板保持具
US20150044619A1 (en) * 2013-08-07 2015-02-12 International Business Machines Corporation Carrier for Ultra-Thin Substrates and Method of Use

Similar Documents

Publication Publication Date Title
TWI627305B (zh) 用於轉盤處理室之具有剛性板的大氣蓋
JP6713413B2 (ja) 低圧ツール交換を可能にする原子層堆積処理チャンバ
KR102749361B1 (ko) 기판 상의 에지 막 두께 균일성을 개선시키기 위한 프로세스 키트
TWI737868B (zh) 成膜裝置及成膜方法
KR102125512B1 (ko) 기판 처리 장치 및 기판 처리 방법
TW201702422A (zh) 氣流控制裝置、噴頭組件及半導體製造設備
KR20150101785A (ko) 기판 처리 장치
TWI690617B (zh) 用於半導體製程的腔室設計
TWI658164B (zh) 薄膜封裝處理系統和處理套組
TWI505392B (zh) 基板處理模組以及包含該基板處理模組的基板處理裝置
KR101525210B1 (ko) 기판 처리장치
JP2012204655A5 (enExample)
KR102376372B1 (ko) 공간적 ald 프로세스 챔버에서 배면 증착을 방지하기 위한 장치
US20230215709A1 (en) Remote plasma unit and substrate processing apparatus including remote plasma
US20140261168A1 (en) Multiple chamber module and platform in semiconductor process equipment
US20170084880A1 (en) Large area dual substrate processing system
KR101661097B1 (ko) 고생산성 박막증착이 가능한 원자층 증착장치
US20160258061A1 (en) Apparatus to improve substrate temperature uniformity
KR101573689B1 (ko) 원자층 증착장치
KR101669082B1 (ko) 기판처리시스템 및 그에 사용되는 트레이
KR20130078815A (ko) 플라즈마를 이용한 기판처리장치 및 기판처리방법
KR101321331B1 (ko) 태양전지용 박막 증착 시스템
KR102630443B1 (ko) 개선된 온도 균일성을 갖는 공간적 웨이퍼 처리
TWI601230B (zh) Substrate processing system
KR101634694B1 (ko) 멀티형 증착 장치 및 방법