JP2020512679A - 触媒積層体又は接着剤を用いた集積回路ウエハの統合 - Google Patents
触媒積層体又は接着剤を用いた集積回路ウエハの統合 Download PDFInfo
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- JP2020512679A JP2020512679A JP2019524368A JP2019524368A JP2020512679A JP 2020512679 A JP2020512679 A JP 2020512679A JP 2019524368 A JP2019524368 A JP 2019524368A JP 2019524368 A JP2019524368 A JP 2019524368A JP 2020512679 A JP2020512679 A JP 2020512679A
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Links
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1612—Process or apparatus coating on selected surface areas by direct patterning through irradiation means
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract
Description
この方法は、
触媒粒子を露出させるのに十分な深さで、触媒積層体中に開口部及び場合によりトレースチャネルを形成する段階と、
触媒積層体に形成された開口部と位置合わせされた電気ランドを有する半導体チップを位置決めする段階と、
無電解導電性材料が半導体チップリード接続部と開口部との間、及び、任意に相互接続チャネルとの間に堆積されるまで、半導体チップ及び基板を無電解溶液に浸す段階と、
を含む。
102 印刷回路基板
104 チップ
105 封止剤
106 ガラス
108 ワイヤ
110 ボンディングパッド
112 基板
114 ボール
115 BGAパッド
202 チップ
204 絶縁マスク層
208 半田ボール
302 チップ
304 詳細部A
306 基板
310 BGAボール
312 回路基板
322 チャネル
324 開口部
326 ランド
502 多層板
512 開口部
514 無電解めっき
516 ビア
602 電気接続ランド
603 チャネル
604 集積回路
606 触媒接着剤
607 開口部
608 チャネル
610 チャネル
612 ボール
614 マスク
620 印刷回路基板
802 織物布ロール
803 ベーキングオーブン
804 ローラー
805 Aステージプリプレグ
806 触媒樹脂混合物
807 Bステージプリプレグ
808 貯蔵器
810 ローラー
811 ローラー
824 チャンバ
826 ラミネーションプレス
828 真空ポンプ
830 触媒樹脂注入織物
902 温度プロット
904 温度上昇時間
905 ゲル点
906 滞留時間
908 冷却サイクル
1102 触媒プリプレグ
1104 表面
1106 表面
1108 境界
1110 境界
1114 触媒粒子
Claims (19)
- 第1の表面と、前記第1の表面と反対側の第2の表面と、を有する触媒積層体であって、前記各表面の下の排除深さに分散された触媒粒子を有する触媒積層体と、
前記触媒積層体の複数の開口部であって、少なくとも1つの前記開口部が、接続用の集積回路のランドに隣接して配置されている、複数の開口部と、
前記触媒積層体の前記第2の表面上に形成された複数のチャネルであって、少なくとも1つの前記チャネルが、開口部から末端ランドまで延びる、複数のチャネルと、
を備え、
前記集積回路ランド、前記チャネル及び前記第2の表面ランドを相互接続する銅の無電解堆積によって導体が形成されるように、前記複数のチャネル、前記開口部、及び、前記集積回路ランドが、露出触媒粒子を有する、集積回路パッケージ。 - 前記触媒積層体が、パラジウム(Pd)、白金(Pt)、ロジウム(Rh)、イリジウム(Ir)、ニッケル(Ni)、金(Au)、コバルト(Co)、若しくは、銅(Cu)、又は、それらの他の化合物若しくは塩のうちの少なくとも1つを含む触媒粒子から形成される、請求項1に記載の集積回路パッケージ。
- 前記触媒粒子が、触媒で被覆された充填剤を含み、前記充填剤が、粘土鉱物、含水アルミニウムフィロ珪酸塩、二酸化ケイ素、カオリナイト、ポリシリケート、カオリンの一種、又は、陶土族、又は、高温プラスチックの少なくとも1つである、請求項1に記載の集積回路パッケージ。
- 前記除外領域が、触媒粒子の最長寸法の約1/2である、請求項1に記載の集積回路パッケージ。
- 前記触媒積層体が、触媒粒子と混合された樹脂を含み、前記触媒粒子の前記樹脂に対する重量比が、5%から16%の範囲であり、前記触媒積層体が、前記触媒積層体の表面の下の除外深さの下に前記触媒粒子を移動させるのに十分なゲル化点滞留時間にわたってゲル化点温度で硬化する、請求項1に記載の集積回路パッケージ。
- 前記樹脂が、エポキシ樹脂、ポリイミド樹脂、シアン酸エステル樹脂、又は、テフロン(登録商標)ブレンド樹脂のうちの少なくとも1つを含む、請求項5に記載の集積回路パッケージ。
- 前記織物が、織布又は不織布のガラス繊維である、請求項1に記載の集積回路パッケージ。
- 前記集積回路ランドが、無電解めっきと適合性のある遷移金属の層を有し、前記層が、露出した触媒粒子を有し、又は、前記層が、銅から形成される、請求項1に記載の集積回路パッケージ。
- 集積回路パッケージを形成するための方法であって、前記方法が、導電性ランド、及び、第1の表面と、前記第1の表面の反対側の第2の表面とを有する触媒積層体を有する集積回路上で動作し、前記各表面が、前記触媒積層体の表面の下の除外深さで密度の低い触媒粒子を有し、
前記方法が、
集積回路ランドに対応する位置で前記触媒積層体に開口部を形成する段階であって、それによって前記開口部が、前記触媒積層体の前記触媒粒子を露出させる段階と、
前記開口部と前記第2の表面上の前記接続領域とにつながる前記除外深さより下の深さまでチャネルを形成する段階と、
前記チャネル及び開口部が、前記ランドと電気的に接触するまで、無電解めっき操作を実行する段階と、
を含む、集積回路パッケージを形成するための方法。 - 前記無電解金属が、銅であり、前記触媒が、パラジウムである、請求項9に記載の方法。
- 前記集積回路ランドが、銅で形成され、又は、銅若しくは触媒粒子の表面堆積を有するニッケルフラッシュで形成される、請求項9に記載の方法。
- 前記触媒積層体が、無機充填剤と混合された触媒粒子を有する、請求項9に記載の方法。
- 前記触媒積層体が、前記触媒積層体の表面の下に除外深さである5%から16%の範囲の触媒粒子の重量濃度を有する、請求項9に記載の方法。
- 前記触媒積層体が、対応する範囲の18%から13%の無機充填剤粒子と共に5%から13%の範囲の活性触媒粒子を有する、請求項9に記載の方法。
- 導電性ランドを有する集積回路チップと、
集積回路に付けられた、触媒粒子と混合された樹脂を含む、触媒樹脂であって、
前記触媒樹脂が、前記集積回路に硬化され、前記触媒樹脂の表面が、前記表面の下の除外深さにわたって露出触媒粒子を有しないように、前記硬化が行われ、
前記触媒樹脂が複数の開口部を有し、前記開口部が前記集積回路ランドに隣接して配置される、触媒樹脂と、
前記集積回路ランドから前記パッケージ端子への相互接続経路を提供するように前記チャネルが配置されている、複数のデバイス電気接続部と、
を備え、
前記チャネル及び前記開口部が、無電解銅堆積によってめっきされた後に導体を形成する、集積回路パッケージ。 - 前記触媒樹脂が、パラジウム(Pd)、白金(Pt)、ロジウム(Rh)、イリジウム(Ir)、ニッケル(Ni)、金(Au)、銀(Ag)、コバルト(Co)、若しくは、銅(Cu)、又は、それらの化合物若しくは塩のうちの少なくとも1つを含む、請求項15に記載のICパッケージ。
- 前記触媒樹脂が、5重量%から16重量%の範囲の触媒粒子を含み、前記触媒粒子が、最長寸法で25u未満である、請求項15に記載のICパッケージ。
- 導電性ランドを有する集積回路上で動作する集積回路パッケージを形成する方法であって、
前記方法が、
前記集積回路の表面に触媒積層体を付ける段階であって、前記触媒積層体が、除外深さの下に触媒粒子を有する、段階と、
前記導電ランドに隣接して前記積層体に開口部を形成する段階と、
前記触媒積層体にデバイスリードを形成する段階と、
前記集積回路ランドを前記デバイス端子に任意に相互接続するチャネルを前記積層体に形成する段階と、
前記集積回路パッケージを無電解めっきし、それによって前記デバイス端子と前記集積回路ランドとを接続する段階と、
を含む、集積回路パッケージを形成する方法。 - 前記触媒積層体が、最長寸法が25u未満である触媒粒子を含み、前記触媒粒子が、5重量%から16重量%の範囲である、請求項18に記載の方法。
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TWI737852B (zh) | 2021-09-01 |
US20180158793A1 (en) | 2018-06-07 |
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EP3539362A4 (en) | 2020-07-15 |
US9922951B1 (en) | 2018-03-20 |
CN110169210A (zh) | 2019-08-23 |
EP3539362A1 (en) | 2019-09-18 |
TW201830528A (zh) | 2018-08-16 |
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