JP2020502782A - アクティブ電子走査アレイ（ａｅｓａ）用のタイル - Google Patents

アクティブ電子走査アレイ（ａｅｓａ）用のタイル Download PDF

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JP2020502782A
JP2020502782A JP2019525735A JP2019525735A JP2020502782A JP 2020502782 A JP2020502782 A JP 2020502782A JP 2019525735 A JP2019525735 A JP 2019525735A JP 2019525735 A JP2019525735 A JP 2019525735A JP 2020502782 A JP2020502782 A JP 2020502782A
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aesa
tile
beamformer
wafer
oxide bonded
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JP6763087B2 (ja
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テシバ，マリー，エー．
ミルン，ジェイソン，ジー．
ロルストン，ケヴィン，シー．
ドラブ，ジョン，ジェイ．
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Raytheon Co
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Raytheon Co
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Abstract

一態様において、アクティブ電子走査アレイ（ＡＥＳＡ）タイルは、ラジエータ構造と、該ラジエータ構造に取り付けられ、無線周波数（ＲＦ）マニホールド及びビームフォーマを有した、酸化物接合された半導体ウエハとを含む。酸化物接合されたウエハを通るＲＦ信号経路が、ビームフォーマに向かって伝播する第１部分と、ビームフォーマに対して平行に伝播する第２部分とを有する。

Description

本開示は、アクティブ電子走査アレイ用のタイルに関する。
技術的に知られているように、フェイズドアレイアンテナは、互いに既知の距離だけ離間した複数のアクティブ回路を含む。それらアクティブ回路の各々が、複数の位相シフタ回路、増幅器回路、及び／又は他の回路を介して、送信器及び受信器のいずれか又は双方に結合される。一部のケースにおいて、位相シフタ、増幅器回路、及び他の回路（例えば、ミキサ回路）は、いわゆる送信／受信（Ｔ／Ｒ）モジュールにて提供され、送信器及び／又は受信器の一部であると見なされる。
位相シフタ、増幅器及び他の回路（例えば、Ｔ／Ｒモジュール）は、しばしば、正しく動作するために外部電源（たとえば、ＤＣ電源）を必要とする。故に、これらの回路は“アクティブ回路”又は“アクティブコンポーネント”として参照される。従って、アクティブ回路を含むフェイズドアレイアンテナは、しばしば、“アクティブフェイズドアレイ”として参照される。アクティブフェイズドアレイレーダは、アクティブ電子走査アレイ（active electronically scanned array；ＡＥＳＡ）としても知られている。
アクティブ回路は、電力を熱の形態で消散する。大量の熱は、アクティブ回路を動作不能にしてしまい得る。故に、アクティブフェイズドアレイは冷却されるべきである。一例において、放熱するために各アクティブ回路に（１つ以上の）ヒートシンクが取り付けられる。
一態様において、アクティブ電子走査アレイ（ＡＥＳＡ）タイルは、ラジエータ（輻射器）構造と、該ラジエータ構造に取り付けられ、無線周波数（ＲＦ）マニホールド及びビームフォーマを有した、酸化物接合された半導体ウエハとを含む。酸化物接合されたウエハを通るＲＦ信号経路が、ビームフォーマに向かって伝播する第１部分と、ビームフォーマに対して平行に伝播する第２部分とを有する。
上記態様は、以下の特徴のうちの１つ以上を含み得る。酸化物接合されたウエハを通るＲＦ信号経路は、ビームフォーマから遠ざかるように伝播する第３部分を含み得る。ＲＦ信号経路は更に、ビームフォーマの中に及びビームフォーマから外に延在する第３経路を含み得る。酸化物接合されたウエハは溶融シリカとし得る。酸化物接合されたウエハは金属ポストを含むことができ、１つのウエハからの金属ポストが、他のウエハの金属ポストに接続され得る。ビームフォーマは、位相シフタ、増幅器、又は特定用途向け集積回路（ＡＳＩＣ）のうちの少なくとも１つを含み得る。ビームフォーマは、シリコンゲルマニウム（ＳｉＧｅ）ウエハ上に製造され得る。ラジエータ構造は、ビームフォーマのための放射線遮蔽を提供し得る。ＲＦマニホールドは、ＲＦ信号を伝播し、ＤＣ信号を伝播しないとし得る。ビームフォーマは、プリント回路基板への表面実装を可能にするための再配線層を含み得る。ウエハビアによってビームフォーマを通ってＰＷＢから電力、信号、及びＲＦがルーティングされ得る。酸化物接合された半導体ウエハは、高抵抗率シリコンからなるとし得る。ストリップライン、コプレーナ導波路（ＣＰＷ）、埋め込みマイクロストリップ、及び同軸ＲＦ構造のうちの少なくとも１つを使用してＲＦ信号がルーティングされ得る。当該タイルは、時間遅延構造及びフィルタリング構造を含み得る。６０°までの広い走査を可能にするよう、アクティブ素子間隔がλ／２以内に収まる。アクティブ素子の数は、１６個から６４個までの間である。当該タイルは、Ｎ＞１として、Ｎ×Ｎアレイのアクティブ素子に拡張可能である。
移動フォーム上に配置されたアクティブ電子走査アレイ（ＡＥＳＡ）のアレイの一例の図である。 ＡＥＳＡの一例の図である。 タイルを有するＡＥＳＡの一例の断面図である。 ２枚の酸化物接合されたウエハの一例の断面図である。 無線周波数（ＲＦ）マニホールドの一例の図である。
アクティブ電子走査アレイ（ＡＥＳＡ）として使用されるとともに、例えば、より大きなＮ×Ｎ ＡＥＳＡを形成するように拡張可能（スケーラブル）な、ミリ波無線周波数（ＲＦ）タイルがここに記載される。このタイルは、ここに記載されるように、ビームフォーミング回路及び放射線遮蔽ラジエータ（輻射器）に直接的にウエハレベル接合される低損失ガラスＲＦマニホールドを組み込む。
技術的に理解されるように、より高い周波数は、アクティブ素子間に、より狭い格子間隔を必要とし、それによって、より小さい空間がアクティブ回路に残される。このことは、広い走査角度のためにλ／２（送信周波数での半波長）間隔が必要とされるとき、更に厳しくなる。ここに記載されるタイル構造は、例えばビアを用いて、信号がＺ軸方向に横切ることを可能にし、それによって、例えばＫａ帯域以上などの、より高い周波数が達成されることを可能にする。プリント回路基板に１つ以上のタイルを取り付けることができ、それが拡張性を可能にする。例えば、このタイルは、高密度のＲＦパッケージング及び相互接続を提供する。一例において、タイルは、低損失溶融シリカ内のＲＦ専用のマニホールドを含む。一例において、タイルは、シリコンゲルマニウム（ＳｉＧｅ）内のビームフォーマ機能を提供し、そして、熱マネジメントを提供するよう、そのＳｉＧｅビームフォーマが冷却剤に近接して配置され得る。一例において、ＲＦラジエータがまた、例えば放射線の影響からの、ＳｉＧｅビームフォーマの遮蔽をも提供し得る。他の例では、ビームフォーマは、例えば高抵抗率シリコン、炭化ケイ素、ガリウム砒素などの、他の半導体の中に製造されてもよい。他の例では、例えばフィルタリング及び時間遅延などの他の機能がＲＦマニホールド層に含められてもよい。一例において、時間遅延機能は、信号を遅延させるために、より長い配線長をルーティングする（経路付ける）ことを含む。これら他の機能は、スタックに組み込まれる追加のウエハに付加されてもよい。
図１を参照するに、ＡＥＳＡは、数多くの用途に使用され得る。例えば、図１に示すように、ＡＥＳＡ１００のアレイ１２が、例えば移動プラットフォームユニット１０などの移動式の環境で使用され得る。この例において、ＡＥＳＡ１００は４×４アレイに配列されている。図１は長方形の形状をしたＡＥＳＡ１００を描いているが、ＡＥＳＡ１００は、円形、三角形、又は任意の多角形の形状であるように構築されてもよい。また、アレイ１２は正方形の形状をしているが、アレイは、長方形、円形、三角形、又は任意の多角形の構成であってもよい。さらに、ＡＥＳＡ１００の数は、１つから任意数までのＡＥＳＡ１００とし得る。
他の用途では、１つ以上のＡＥＳＡ１００が、海軍艦艇の側面上、地上構造物上、地上船上、航空船上、宇宙船上などで使用され得る。特定の一例において、ＡＥＳＡ１００は恒星探査機又は惑星探査機上に配置され得る。ここに示されることになるように、ＡＥＳＡ１００は、モジュール式でスカラー式のＡＥＳＡシステムを形成するための“ビルディングブロック”である。特定の一例において、ＡＥＳＡ１００はミリ波ＡＥＳＡである。
図２を参照するに、特定の一例において、ＡＥＳＡ１００はタイル２００のアレイ（例えば、タイル２００の９×９アレイ）を含む。タイル２００は、“良品保証タイル（known good tiles）”（ＫＧＴ）としても知られている。ＡＥＳＡ１００はまた、冷却板２０４及びプリント回路基板（ＰＣＢ）２０６を含んでいる。一例において、各タイル２００がＰＣＢ２０６に取り付けられ、ＰＣＢ２０６が冷却板２０４によって冷却される。各タイル２００は、信号を送受信するアクティブ素子２２２を含んでいる。一例において、アクティブ素子２２２は８×８アレイに配列される。ここに更に後述するように、タイル２００は、酸化物接合（酸化物ボンディング）されたウエハのスタックから製造され、それらが、無線周波数ダイレクトボンドハイブリッド化（radio frequency direct bond hybridization；ＲＦ―ＤＢＨ）及びウエハ貫通ビアを用いて相互接続される。
図３を参照するに、タイル２００は、ウエハ（例えば、ウエハ３０４ａ、ウエハ３０４ｂ、ウエハ３０４ｃ、及びウエハ３０４ｄ）、ビームフォーマ３１２、及びラジエータ／遮蔽構造３２４を含んでいる。ウエハ３０４ａ−３０４ｄは酸化物接合されている。例えば、ウエハ３０４ａの酸化物３０６ａがウエハ３０４ｂの酸化物３０６ｂと接合され、ウエハ３０４ｂの酸化物３０６ｃがウエハ３０４ｃの酸化物３０６ｄと接合され、そして、ウエハ３０４ｃの酸化物３０６ｅがウエハ３０４ｄの酸化物３０６ｆと接合される。ビームフォーマ３１２をウエハスタックに接合することにも、酸化物が使用される（例えば、ウエハ３０４ｄ上の酸化物３０６ｇがビームフォーマ３１２の酸化物３０６ｈと接合される）。
ウエハ３０４ａ−３０４ｄ内にＲＦマニホールド３２０が配設されている。特定の一例において、ＲＦマニホールドは、図３に描かれるようにウエハ３０４ａ−３０４ｄの中央にあるが、図３に示されたもの以外のウエハに置かれてもよい。ＲＦマニホールド３２０はＲＦコンバイナ（結合器）／ディバイダ（分配器）として機能する。例えば、６４個のアクティブ素子では、マニホールドは６４：１のＲＦコンバイナ／ディバイダである。一例において、ウエハ３０４ａ−３０４ｄ内で、マニホールド３２０はＲＦ信号のみをルーティングし、特に、ウエハ３０４ａ−３０４ｄ内にＤＣ電力又は制御信号のルーティングは存在しない。マニホールド３２０はＸＹ平面内で（すなわち、図３の紙面内へと）延在し、マニホールド３２０の一例が図５にてＸＹ平面内で描かれる。一例において、マニホールド３２０は、高抵抗率シリコンからなる層を含む。
一例において、ウエハ３０４ａ−３０４ｄは溶融シリカウエハである。特定の一例において、各シリカウエハは１００ミクロン厚である。特定の一例において、溶融シリカは低損失の溶融シリカであり、ｋ＝３．８２であり、損失正接は６０ＧＨｚで０．０００７に等しい。一例において、ウエハ３０４ａ−３０４ｄは、低損失で高抵抗率のシリコンとし得る。更なる例では、ウエハ３０４ａ−３０４ｄは、４枚より多い又は少ないウエハとし得る。
タイル２００を貫く電気経路を提供するためにビアが使用される。例えば、ウエハ３０４ａはビア（例えば、ビア３０８ａ及びビア３０８ｂ）を含み、ウエハ３０４ｂはビア（例えば、ビア３０８ｃ及びビア３０８ｄ）を含み、ウエハ３０４ｃはビア（例えば、ビア３０８ｅ、ビア３０８ｆ、ビア３０８ｇ、ビア３０８ｈ、及びビア３０８ｉ）を含み、そして、ウエハ３０４ｄはビア（例えば、ビア３０８ｊ、ビア３０８ｋ、ビア３０８ｌ、ビア３０８ｍ、及びビア３０８ｎ）を含む。
ビアは、金属ポストに接続された金属トレースに接続され得る。例えば、ウエハ３０４ａは、金属ポスト３１３及び金属トレース３１４を含んでいる。図４にて更に説明するように、金属ポストは、１つのウエハから別の１つのウエハへと電気接続することを提供する。
酸化物接合されたウエハ３０４ａ−３０４ｄは、電気的な相互接続に使用されるメタライゼーション層を含む。一例において、金属層３１０ａは、ビア３０８ｊとビア３０８ｋとの間のインターコネクトを提供している。他の一例において、酸化物３０６ｄは、ビア３０８ｆ、ビア３０８ｇ、及びビア３０８ｈの間の電気接続を提供する金属層インターコネクト３１０ｂを含んでいる。更なる一例において、酸化物３０６ｈは、ビア３０８ｍとビア３０８ｎとの間の電気接続を提供するインターコネクト３１０ｃを含んでいる。ビア３０８は、ウエハ３０４の両面の金属を接続し、そのウエハ上の金属パッド間のインターコネクトは、金属ポスト３１３に示される金属ポストとともに酸化物接合中に作製される。
ビームフォーマ３１２は、少なくとも１つの制御ＡＳＩＣ（特定用途向け集積回路）（例えば、ＡＳＩＣ３４０）、増幅器（例えば、増幅器３４４ａ及び増幅器３４４ｂ）、及び位相シフタ（例えば、位相シフタ３４６ａ及び位相シフタ３４６ｂ）を含んでいる。一例において、ビームフォーマ３１２はシリコンゲルマニウム（ＳｉＧｅ）ウエハ上に製造される。他の例では、ビームフォーマ３１２はＲＦ減衰及びＲＦスイッチを提供する。
ビームフォーマ３１２はまた、標準的な表面実装技術を用いたＰＣＢ２０６への取り付けを可能にするために、インターコネクトパッド３４８ｂを含む裏面再配線層（ＲＤＬ）（例えば、ＲＤＬ３４８ａ）を含んでいる。ビームフォーマ３１２は、はんだバンプ（例えば、はんだバンプ３５０ａ−３５０ｅ）によってＰＣＢ２０６に取り付けられる。一例において、はんだバンプ３５０ａは制御信号を搬送し、はんだバンプ３５０ｂ、３５０ｄはグランドに取り付けられ、はんだバンプ３５０ｃはＲＦ信号を搬送し、そして、はんだバンプ３５０ｅは電力を搬送する。
ラジエータ／遮蔽構造３２４は、金属インターコネクトによって上記ウエハに接合される。一例において、このインターコネクトははんだバンプとし得る。他の一例において、それはインジウムバンプであってもよい。例えば、ラジエータ／遮蔽構造３２４は、はんだバンプ３８０ａによってウエハ３０４ａのビア３０８ａに接合され、また、ラジエータ／遮蔽構造３２４は、はんだバンプ３８０ｂによってウエハ３０４ａのビア３０８ｂに接合される。一例において、ラジエータ／遮蔽構造３２４は、ラジエータを通じてＲＦ信号を伝播するとともに、ビームフォーマ３１２のための放射線シールドを提供するように設計される。一例において、ラジエータは、ウエハスタックへの接続の応力を軽減するために低い膨張係数を持つとともに、正しい放射線遮蔽量を提供するのに十分な厚さの金属で作製される。
特定の一例において、ＲＦ信号経路３７０は、ラジエータ／遮蔽構造３２４で始まり、接続３８０ｂ、ウエハ３０４ａのビア３０８ｂ、ウエハ３０４ｂのビア３０８ｄ、ウエハ３０４ｃのビア３０８ｉ、及びウエハ３０４ｄのビア３０８ｎを通って続く。ＲＦ信号経路３７０は、増幅器３４４ｂ及び位相シフタ３４６ｂを通り抜けることによってビームフォーマ３１２内に続く。ＲＦ信号は、ウエハ３０４ｄのビア３０８ｍ、ウエハ３０４ｃのビア３０８ｈを通り抜けることによって、ビームフォーマ３１２から離れてウエハ３０４ｃ、３０４ｄ内に戻るように続く。ＲＦ信号経路３７０は、インターコネクト３１０ｂ、ウエハ３０４ｃのビア３０８ｇ、ウエハ３０４ｄのビア３０８ｉを通って続く。ＲＦ信号は、ビームフォーマ３１２内に戻ってビア３４２を通り、バンプ３５０ｃを通ってＰＣＢ２０６へと伝播する。
ＲＦ経路３７０は、これらのウエハ内で少なくとも２つの軸の方向に移る。例えば、ＲＦ信号経路３７０は、２つの軸に沿って移る（例えば、それはＸ軸及びＺ軸に沿って移る）。他の例では、信号経路３７０はＹ軸（図示せず）の方向にも移り得る。他の例では、ＲＦ信号経路は、ＲＦ信号経路３７０とは逆向きに流れ得る。他のＲＦ信号経路は、信号経路３７０によって限定されない。すなわち、他のＲＦ信号経路及び組み合わせが可能であり、ＲＦ信号経路３７０は、図３において可能な多数のＲＦ信号経路のうちの単なる一例である。
図４は、例えば酸化物接合されたウエハ３０４ａ−３０４ｄが構成されるように酸化物接合される２つのウエハの一例を示している。例えば、ウエハ４０４ａの酸化物４０６ａが、ウエハ４０４ｂの酸化物４０６ｂに接合される。一例において、酸化物接合は、室温で形成される分子結合である。ＤＢＨは、例えば、ウエハ４０４ｂのポスト４１２ｃに接合されたウエハ４０４ａのポスト４１２ａ、及びウエハ４０４ｂのポスト４１２ｄに接合されたウエハ４０４ａのポスト４１２ｂなどの、金属ポストを含む。一例において、ポスト４１２ａ−４１２ｄは金属で作製される。特定の一例において、ポスト４１２ａ−４１２ｄは銅ポストである。他の特定の一例において、ポスト４１２ａ−４１２ｄはニッケルポストである。特定の更なる一例において、ポスト４１２ａ−４１２ｄはアルミニウムポストである。一例において、ポスト４１２ａ−４１２ｄは、１０ミクロン未満のピッチ能力を有する。
ポスト同士が金属トレース層によって接続され得る（例えば、ポスト４１２ｃが、金属トレース層４１４によってポスト４１２ｄに接続される）。金属トレース層はビアに接続され得る（例えば、金属トレース層４１４はビア４０８に接続される）。一例において、ビア４０８は、直径において約２５ミクロンとし得る。一例において、ビア４０８は銅ビアとし得る。
図５は、ＲＦマニホールド３２０の一例がＲＦマニホールド５２０であることを示している。この例において、ＲＦマニホールド５２０は、１６素子（例えば、アクティブ素子５２２ａ−５２２ｐ）用の１６：１のＲＦコンバイナ／ディバイダである。一例において、マニホールド５２０は、低損失で高抵抗率のシリコンであるウエハ３０４ａ−３０４ｄ内に製造される。
ここに記載したプロセスは、記載した特定の実施形態に限定されるものではない。ここに記載した複数の異なる実施形態の要素を組み合わせて、具体的には上述していない他の実施形態を形成してもよい。ここでは具体的に記載されていない他の実施形態も、以下の請求項の範囲内にある。

Claims (17)

  1. ラジエータ構造と、
    前記ラジエータ構造に取り付けられ、無線周波数（ＲＦ）マニホールド及びビームフォーマを有した、酸化物接合された半導体ウエハと、
    を有し、
    前記酸化物接合されたウエハを通るＲＦ信号経路が、前記ビームフォーマに向かって伝播する第１部分と、前記ビームフォーマに対して平行に伝播する第２部分とを有する、
    アクティブ電子走査アレイ（ＡＥＳＡ）タイル。
  2. 前記酸化物接合されたウエハを通る前記ＲＦ信号経路は更に、前記ビームフォーマから遠ざかるように伝播する第３部分を有する、請求項１に記載のＡＥＳＡタイル。
  3. 前記ＲＦ信号経路は更に、前記ビームフォーマの中へと及び前記ビームフォーマから外へと延在する第３経路を有する、請求項１に記載のＡＥＳＡタイル。
  4. 前記酸化物接合されたウエハは溶融シリカである、請求項１に記載のＡＥＳＡタイル。
  5. 前記酸化物接合されたウエハは金属ポストを有し、
    １つのウエハからの金属ポストが、他のウエハの金属ポストに接続されている、
    請求項１に記載のＡＥＳＡタイル。
  6. 前記ビームフォーマは、位相シフタ、増幅器、又は特定用途向け集積回路（ＡＳＩＣ）のうちの少なくとも１つを有する、請求項１に記載のＡＥＳＡタイル。
  7. 前記ビームフォーマは、シリコンゲルマニウム（ＳｉＧｅ）ウエハ上に製造されている、請求項１に記載のＡＥＳＡタイル。
  8. 前記ラジエータ構造は、前記ビームフォーマのための放射線遮蔽を提供する、請求項１に記載のＡＥＳＡタイル。
  9. 前記ＲＦマニホールドは、ＲＦ信号を伝播し、ＤＣ信号を伝播しない、請求項１に記載のＡＥＳＡタイル。
  10. 前記ビームフォーマは、プリント回路基板への表面実装を可能にするための再配線層を含んでいる、請求項１に記載のＡＥＳＡタイル。
  11. ウエハビアによって前記ビームフォーマを通ってＰＷＢから電力、信号、及びＲＦがルーティングされる、請求項１に記載のＡＥＳＡタイル。
  12. 前記酸化物接合された半導体ウエハは、高抵抗率シリコンからなる、請求項１に記載のＡＥＳＡタイル。
  13. ストリップライン、コプレーナ導波路（ＣＰＷ）、埋め込みマイクロストリップ、及び同軸ＲＦ構造のうちの少なくとも１つを使用してＲＦ信号がルーティングされる、請求項１に記載のＡＥＳＡタイル。
  14. 当該タイルは、時間遅延構造及びフィルタリング構造を有する、請求項１に記載のＡＥＳＡタイル。
  15. 当該タイルは更に、複数のアクティブ素子を有し、６０°までの広い走査を可能にするよう、アクティブ素子間隔がλ／２以内に収まる、請求項１に記載のＡＥＳＡタイル。
  16. 前記アクティブ素子の数は、１６個から６４個までの間である、請求項１５に記載のＡＥＳＡタイル。
  17. 当該タイルは、Ｎ＞１として、Ｎ×Ｎアレイのアクティブ素子に拡張可能である、請求項１５に記載のＡＥＳＡタイル。
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