CN109891674B - 用于有源电子扫描阵列(aesa)的瓦片 - Google Patents

用于有源电子扫描阵列(aesa)的瓦片 Download PDF

Info

Publication number
CN109891674B
CN109891674B CN201780066115.2A CN201780066115A CN109891674B CN 109891674 B CN109891674 B CN 109891674B CN 201780066115 A CN201780066115 A CN 201780066115A CN 109891674 B CN109891674 B CN 109891674B
Authority
CN
China
Prior art keywords
tile
aesa
beamformer
wafer
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201780066115.2A
Other languages
English (en)
Other versions
CN109891674A (zh
Inventor
M·A·手柴
J·G·米尔恩
K·C·罗尔斯顿
J·J·德拉布
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of CN109891674A publication Critical patent/CN109891674A/zh
Application granted granted Critical
Publication of CN109891674B publication Critical patent/CN109891674B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/02—Arrangements for de-icing; Arrangements for drying-out ; Arrangements for cooling; Arrangements for preventing corrosion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
    • H01Q1/526—Electromagnetic shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/0006—Particular feeding systems
    • H01Q21/0025—Modular arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/0006—Particular feeding systems
    • H01Q21/0075—Stripline fed arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
    • H01Q21/061—Two dimensional planar arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
    • H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
    • H01Q3/34—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means
    • H01Q3/36—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means with variable phase-shifters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6616—Vertical connections, e.g. vias
    • H01L2223/6622—Coaxial feed-throughs in active or passive substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6672—High-frequency adaptations for passive devices for integrated passive components, e.g. semiconductor device with passive components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0237—Disposition of the redistribution layers
    • H01L2224/02372—Disposition of the redistribution layers connecting to a via connection in the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05005—Structure
    • H01L2224/05008—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body, e.g.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/0502—Disposition
    • H01L2224/05025—Disposition the internal layer being disposed on a via connection of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05575—Plural external layers
    • H01L2224/05576—Plural external layers being mutually engaged together, e.g. through inserts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/05686—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/06181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H01L2224/081—Disposition
    • H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/08135—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/08145—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H01L2224/08146—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the bonding area connecting to a via connection in the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13024—Disposition the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13025—Disposition the bump connector being disposed on a via connection of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/808—Bonding techniques
    • H01L2224/80894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
    • H01L2224/80896—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically insulating surfaces, e.g. oxide or nitride layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/809—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding with the bonding area not providing any mechanical bonding
    • H01L2224/80901—Pressing a bonding area against another bonding area by means of a further bonding area or connector
    • H01L2224/80902—Pressing a bonding area against another bonding area by means of a further bonding area or connector by means of a further bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L24/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/142—HF devices
    • H01L2924/1421—RF devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Transceivers (AREA)

Abstract

在一个方面，一种有源电子扫描阵列(AESA)瓦片，包括：辐射器结构；以及氧化物结合的半导体晶片，附接到辐射器结构并包括射频(RF)歧管和波束形成器。通过所述氧化物结合的晶片的RF信号路径包括朝向所述波束形成器传播的第一部分和平行于所述波束形成器传播的第二部分。

Description

用于有源电子扫描阵列(AESA)的瓦片
背景技术
如本领域所公知的，相控阵天线包括以已知距离彼此间隔开的多个有源电路。每一个有源电路通过多个移相器电路、放大器电路和/或其他电路耦合到发送器和接收器中的任一个或两者。在一些情况下，移相器、放大器电路和其他电路(例如，混频器电路)提供在所谓的发送/接收(T/R)模块中，并且被认为是发送器和/或接收器的部分。
移相器、放大器和其他电路(例如，T/R模块)通常需要外部电源(例如，DC电源)来能正确地操作。因此，这些电路被称为“有源电路”或“有源组件”。因此，包括有源电路的相控阵天线通常被称为“有源相控阵”。有源相控阵雷达也被称为有源电子扫描阵列(AESA)。
有源电路以热的形式耗散功率。大量的热会导致有源电路无法操作。因此，应冷却有源相控阵。在一个示例中，热沉(单个或多个)附接到每一个有源电路以散热。
发明内容
在一个方面，一种有源电子扫描阵列(AESA)瓦片，包括：辐射器结构；以及氧化物结合的(oxide-bonded)半导体晶片，附接到所述辐射器结构并包括射频(RF)歧管和波束形成器。其中，通过所述氧化物结合的晶片的RF信号路径包括朝向所述波束形成器传播的第一部分、平行于所述波束形成器传播的第二部分、远离所述波束形成器传播的第三部分和延伸到所述波束形成器中并且延伸出所述波束形成器的第四部分。其中所述RF信号路径沿着所述晶片内的至少两个轴移动，所述至少两个轴分别为X轴和Z轴。其中所述RF信号路径的所述第一部分、所述第三部分和所述第四部分在Z轴方向上移动，以及其中该RF信号路径的所述第二部分在X轴方向上移动。
以上方面可以具有一个或多个以下特征。所述氧化物结合的晶片可以是熔融二氧化硅(silica)。所述氧化物结合的晶片可以包括金属柱，其中，来自一个晶片的金属柱可以连接到另一个晶片的金属柱。所述波束形成器可以包括移相器、放大器或专用集成电路(ASIC)中的至少一个。所述波束形成器可以制造在硅锗(SiGe)晶片上。所述辐射器结构可以为所述波束形成器提供辐射屏蔽。所述RF歧管可以传播RF信号而不传播任何DC信号。所述波束形成器可以包括再分布层，以容许表面安装到印刷电路板。可以通过晶片过孔使功率、信号和RF从PWB路由通过所述波束形成器。所述氧化物结合的半导体晶片可以由高电阻率硅制成。可以使用带状线、共面波导(CPW)、掩埋微带和同轴RF结构中的至少一种来路由所述RF信号。所述瓦片可以包括时间延迟结构和滤波结构。有源元件间隔适合在λ/2内以使得能够实现至60度的宽扫描。有源元件的数量在十六到六十四个有源元件之间。所述瓦片能够缩放到有源元件的N×N阵列，其中N>1。
附图说明
图1是设置在移动平台上的有源电子扫描阵列(AESA)的阵列的一个示例的图。
图2是AESA的示例的图。
图3是具有瓦片(tile)的AESA的示例的横截面图。
图4是两个氧化物结合晶片的示例的横截面图。
图5是射频(RF)歧管(manifold)的示例的图。
具体实施方式
本文描述的是毫米波射频(RF)瓦片，其用作有源电子扫描阵列(AESA)并且可缩放以形成例如更大的N×N AESA。如本文所述，瓦片并入有低损耗玻璃RF歧管，其晶片级直接结合到波束形成电路和辐射屏蔽辐射器。
如本领域所理解的，较高频率需要有源元件之间更紧密的晶格间距，这为有源电路留下较小的空间。当对宽扫描角需要λ/2(发射频率处的半波长)间隔时，这变得甚至更紧密。本文描述的瓦片结构使得信号能够例如使用过孔穿过Z轴，从而容许实现诸如Ka波段及以上的更高频率。可以将一个或多个瓦片安装到印刷电路板上，这实现了可缩放性。例如，瓦片提供高密度RF封装和互连。在一个示例中，瓦片包括低损耗熔融二氧化硅中的仅RF歧管。在一个示例中，瓦片在硅锗(SiGe)中提供波束形成器功能，并且SiGe波束形成器可以紧邻冷却剂放置以提供热管理。在一个示例中，RF辐射器还可以提供对SiGe波束形成器的屏蔽，例如，以免受辐射影响。在其他示例中，波束形成器可以在其他半导体中制造，诸如高电阻率硅、碳化硅、砷化镓等。在其他示例中，其他功能可以包括在诸如滤波和时间延迟的RF歧管层中。在一个示例中，时间延迟功能包括路由较长的迹线长度以延迟信号。这些其他功能可以添加到包含在堆叠体中的附加晶片中。
参考图1，AESA可用于许多应用中。例如，如图1中所示，AESA 100的阵列12可以用在诸如移动平台单元10的移动环境中。在此示例中，AESA 100以4×4阵列布置。虽然图1描绘了呈矩形形状的AESA 100，但是AESA 100可以被构造为圆形、三角形或任何多边形形状。而且，尽管阵列12呈方形，但是阵列可以是矩形、圆形、三角形或任何多边形布置。此外，AESA 100的数量可以是一至任意数量的AESA 100。
在其他应用中，一个或多个AESA 100可以用于海军舰艇侧面上、地面结构、地面船只(ground vessel)、空气罐(air vessel)、太空船(space vessel)等上。在一个特定示例中，AESA 100可以放置在恒星或行星探测器上。如本文将示出的，AESA 100是用于形成模块化和标量的AESA系统的“构建块”。在一个特定示例中，AESA 100是毫米波AESA。
参考图2，在一个特定示例中，AESA 100包括瓦片200的阵列(例如，瓦片200的9×9的阵列)。瓦片200也称为“已知良好瓦片”(KGT)。AESA 100还包括冷却板204和印刷电路板(PCB)206。在一个示例中，每一个瓦片200附接到PCB 206，其由冷板204冷却。每一个瓦片200包括发送和接收信号的有源元件222。在一个示例中，有源元件222布置成8×8阵列。如本文将进一步描述的，瓦片200由氧化物结合的晶片的堆叠体制成，其使用射频直接结合杂化(RF-DBH)并经晶片过孔互连。
参考图3，瓦片200包括晶片(例如，晶片304a、晶片304b、晶片304c和晶片304d)、波束形成器312和辐射器/屏蔽结构324。晶片304a-304d是氧化物结合的。例如，晶片304a的氧化物306a与晶片304b的氧化物306b结合，晶片304b的氧化物306c与晶片304c的氧化物306d结合，且晶片304c的氧化物306e与晶片304d的氧化物306f结合。氧化物还用于将波束形成器312结合到晶片堆叠体(例如，晶片304d上的氧化物306g与波束形成器312的氧化物306h结合)。
RF歧管320设置在晶片304a-304d内。在一个特定示例中，RF歧管位于图3中所描绘的晶片304a-304d的中间，但是可以位于图3中所示的晶片以外的其他晶片中。该RF歧管320个用作RF组合器/分配器。例如，对于64个有源元件，歧管将是64：1RF组合器/分配器。在一个示例中，在晶片304a-304d内，歧管320仅路由RF信号，并且特别地，在晶片304a-304d中不路由DC功率或控制信号。歧管320在XY平面中延伸(即，进入图3中)，并且歧管320的示例描绘于图5中的XY平面中。在一个示例中，歧管320包括由高电阻率硅制成的层。
在一个示例中，晶片304a-304d是熔融二氧化硅晶片。在一个特定示例中，每一个二氧化硅晶片为100微米厚。在一个特定示例中，熔融二氧化硅是低损耗熔融二氧化硅，其中k＝3.82并且损耗角正切在60GHz处等于0.0007。在一个示例中，晶片304a-304d可以是低损耗、高电阻率的硅。在另外的示例中，晶片304a-304d可以多于或少于四个晶片。
过孔用于提供通过瓦片200的电路径。例如，晶片304a包括过孔(例如，过孔308a和过孔308b)，晶片304b包括过孔(例如，过孔308c和过孔308d)，晶片304c包括过孔(例如，过孔308e、过孔308f、过孔308g、过孔308h和过孔308i)，并且晶片304d包括过孔(例如，过孔308j、过孔308k、过孔308l、过孔308m和过孔308n)。
过孔可以连接到金属迹线，金属迹线连接到金属柱。例如，晶片304a包括金属柱313和金属迹线314。如图4中进一步所示，金属柱提供从一个晶片到另一个晶片的电连接。
氧化物结合晶片304a-304d包括用于电互连的金属化层。在一个示例中，金属层310a提供过孔308j和过孔308k之间的互连。在另一示例中，氧化物306h包括金属层互连310b，金属层互连310b提供过孔308f、过孔308g和过孔308h之间的电连接。在另一示例中，氧化物306h包括互连310c，互连310c提供过孔308m和过孔308n之间的电连接。过孔308连接晶片304两侧的金属，并且在与以金属柱313示出的金属柱的氧化物结合期间制造晶片上的金属焊盘之间的互连。
波束形成器312包括至少一个控制专用集成电路ASIC(例如，ASIC 340)、放大器(例如，放大器344a和放大器344b)和移相器(例如，移相器346a和移相器346b)。在一个示例中，波束形成器312制造在硅锗(SiGe)晶片上。在其他示例中，波束形成器312提供RF衰减和RF开关。
波束形成器312还包括背面再分布层(RDL)(例如，RDL 348a)，其包括互连焊盘348b，以使得能够使用标准表面安装技术附接到PCB 206。波束形成器312通过焊料凸块(例如，焊料凸块350a-350e)附接到PCB 206。在一个示例中，焊料凸块350a承载控制信号，焊料凸块350b、350d附接到地，焊料凸块350c承载RF信号并且焊料凸块350e承载功率。
辐射器/屏蔽结构324通过金属互连结合到晶片。在一个示例中，互连可以是焊料凸块。在另一个示例中，其可以是铟凸块。例如，辐射器/屏蔽结构324通过焊料凸块380a结合到晶片304a的过孔308a，并且辐射器/屏蔽结构324通过焊料凸块380a结合到晶片304a的过孔308b。在一个示例中，辐射器/屏蔽结构324被设计成通过辐射器传播RF信号并为波束形成器312提供辐射屏蔽。在一个示例中，辐射器由例如不胀钢的具有低膨胀系数的金属制成以减轻与晶片堆叠体连接的应力，并且足够厚以提供正确量的辐射屏蔽。
在一个特定示例中，RF信号路径370在辐射器/屏蔽结构324处开始并且通过连接380b、晶片304a的过孔308b、经晶片304b的过孔308d、经晶片304c的过孔308i并经晶片304d的过孔308n继续。RF信号路径370通过行进通过放大器344b和移相器346而在波束形成器312中继续。RF信号通过行进通过晶片304d的过孔308m、通过晶片304c的过孔308h而继续远离波束形成器312返回并进入晶片304c、304d。RF信号路径370通过互连310b经晶片304c的过孔308g、经晶片304d的过孔308i继续。RF信号传播回波束形成器312中并通过凸块350c经过孔304c传播到PCB 206。
RF路径370沿晶片内的至少两个轴移动。例如，RF信号路径370沿着两个轴移动(例如，它沿着X轴和Z轴移动)。在其他示例中，信号路径370也可以沿Y轴(未示出)移动。在其他示例中，RF信号路径可以在与RF信号路径370相反的方向上流动。其他RF信号路径不受信号路径370的限制。也就是说，其他RF信号路径和组合是可能的并且RF信号路径370仅是图3中可能的许多RF信号路径的一个示例。
图4描绘了氧化物结合的两个晶片的一个示例，例如，以配置氧化物结合的晶片304a-304d的方式。例如，晶片404a的氧化物406a结合到晶片404b的氧化物406b。在一个示例中，氧化物结合是在室温下形成的分子结合。DBH包括金属柱，诸如结合到晶片404b的柱412c的晶片404a的柱412a以及结合到晶片404b的柱412d的晶片404a的柱412b。在一个示例中，柱412a-412d由金属制成。在一个特定示例中，柱412a-412d是铜柱。在另一特定示例中，柱412a-412d是镍柱。在另一特定示例中，柱412a-412d是铝柱。在一个示例中，柱412a-412d具有小于10微米的节距(pitch)性能。
柱可以通过金属迹线层连接(例如，柱412c通过金属迹线层414连接到柱412d)。金属迹线层可以连接到过孔(例如，金属迹线层414连接到过孔408)。在一个示例中，过孔408的直径可以为约25微米。在一个示例中，过孔408可以是铜过孔。
图5描绘了RF歧管320是RF歧管520的示例。在该示例中，RF歧管520是对于16个元件(例如，有源元件522a-522p)的16：1RF组合器/分配器。在一个示例中，歧管520制造在低损耗、高电阻率硅的晶片304a-304d中。
本文描述的过程不限于所描述的具体实施例。可以组合本文描述的不同实施例的元件以形成上面没有具体阐述的其他实施例。本文未具体描述的其他实施例也在以下权利要求的范围内。

Claims (15)

1.一种有源电子扫描阵列(AESA)瓦片，包括：
辐射器结构；以及
氧化物结合的半导体晶片，附接到所述辐射器结构并包括射频(RF)歧管和波束形成器，并且
其中，通过所述氧化物结合的晶片的RF信号路径包括朝向所述波束形成器传播的第一部分、平行于所述波束形成器传播的第二部分、远离所述波束形成器传播的第三部分和延伸到所述波束形成器中并且延伸出所述波束形成器的第四部分，
其中所述RF信号路径沿着所述晶片内的至少两个轴移动，所述至少两个轴分别为X轴和Z轴，
其中所述RF信号路径的所述第一部分、所述第三部分和所述第四部分在Z轴方向上移动，以及
其中该RF信号路径的所述第二部分在X轴方向上移动。
2.如权利要求1所述的AESA瓦片，其中，所述氧化物结合的晶片是熔融二氧化硅。
3.如权利要求1所述的AESA瓦片，其中，所述氧化物结合的晶片包括金属柱，并且
其中，来自一个晶片的金属柱连接到另一个晶片的金属柱。
4.如权利要求1所述的AESA瓦片，其中，所述波束形成器包括移相器、放大器或专用集成电路(ASIC)中的至少一个。
5.如权利要求1所述的AESA瓦片，其中，所述波束形成器制造在硅锗(SiGe)晶片上。
6.如权利要求1所述的AESA瓦片，其中，所述辐射器结构为所述波束形成器提供辐射屏蔽。
7.如权利要求1所述的AESA瓦片，其中，所述RF歧管传播RF信号而不传播DC信号。
8.如权利要求1所述的AESA瓦片，其中，所述波束形成器包括再分布层，以容许表面安装到印刷电路板。
9.如权利要求1所述的AESA瓦片，其中，通过晶片过孔使功率、信号和RF从PWB路由通过所述波束形成器。
10.如权利要求1所述的AESA瓦片，其中，所述氧化物结合的半导体晶片由高电阻率硅制成。
11.如权利要求1所述的AESA瓦片，其中，使用带状线、共面波导(CPW)、掩埋微带和同轴RF结构中的至少一种来路由所述RF信号。
12.如权利要求1所述的AESA瓦片，其中，所述瓦片包括时间延迟结构和滤波结构。
13.如权利要求1所述的AESA瓦片，还包括有源元件，
其中，有源元件间隔适合在λ/2内以使得能够实现至60度的宽扫描。
14.如权利要求13所述的AESA瓦片，其中，有源元件的数量在十六到六十四个有源元件之间。
15.如权利要求13所述的AESA瓦片，其中，所述瓦片能够缩放到有源元件的N×N阵列，其中N>1。
CN201780066115.2A 2016-12-16 2017-10-03 用于有源电子扫描阵列(aesa)的瓦片 Active CN109891674B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/381,286 2016-12-16
US15/381,286 US10541461B2 (en) 2016-12-16 2016-12-16 Tile for an active electronically scanned array (AESA)
PCT/US2017/054836 WO2018111386A1 (en) 2016-12-16 2017-10-03 Tile for an active electronically scanned array (aesa)

Publications (2)

Publication Number Publication Date
CN109891674A CN109891674A (zh) 2019-06-14
CN109891674B true CN109891674B (zh) 2021-08-24

Family

ID=60120186

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780066115.2A Active CN109891674B (zh) 2016-12-16 2017-10-03 用于有源电子扫描阵列(aesa)的瓦片

Country Status (7)

Country Link
US (1) US10541461B2 (zh)
EP (1) EP3555961B1 (zh)
JP (1) JP6763087B2 (zh)
KR (1) KR102193899B1 (zh)
CN (1) CN109891674B (zh)
TW (1) TWI690970B (zh)
WO (1) WO2018111386A1 (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170237180A1 (en) 2015-09-18 2017-08-17 Anokiwave, Inc. Laminar Phased Array Antenna
US10879608B2 (en) * 2016-09-13 2020-12-29 The Board Of Regents Of The University Of Oklahoma Radio frequency scanner
US10367256B2 (en) * 2017-06-26 2019-07-30 Avl Technologies, Inc. Active electronically steered array for satellite communications
US10763566B2 (en) * 2017-07-20 2020-09-01 Apple Inc. Millimeter wave transmission line structures
US10361485B2 (en) 2017-08-04 2019-07-23 Raytheon Company Tripole current loop radiating element with integrated circularly polarized feed
WO2019126826A1 (en) * 2017-12-24 2019-06-27 Anokiwave, Inc. Beamforming integrated circuit, aesa system and method
US10998640B2 (en) 2018-05-15 2021-05-04 Anokiwave, Inc. Cross-polarized time division duplexed antenna
US11432408B2 (en) * 2018-05-18 2022-08-30 Raytheon Company Additive manufactured reactive beamformer
US11495877B2 (en) * 2018-08-17 2022-11-08 Metawave Corporation Multi-layer, multi-steering antenna system for autonomous vehicles
US10840197B2 (en) * 2018-10-30 2020-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and manufacturing method thereof
US11557545B2 (en) * 2018-12-04 2023-01-17 Qorvo Us, Inc. Monolithic microwave integrated circuit (MMIC) with embedded transmission line (ETL) ground shielding
CN110379799B (zh) * 2019-07-18 2020-04-03 武汉新芯集成电路制造有限公司 一种芯片结构、晶圆结构及其制造方法
US11183758B2 (en) * 2019-07-23 2021-11-23 Rockwell Collins, Inc. System and method for active electronically scanned array with multi-band multi-beam architecture
CN110739537B (zh) * 2019-09-28 2021-06-15 西南电子技术研究所（中国电子科技集团公司第十研究所） 高密度高集成度毫米波瓦式相控天线t/r组件
US11049824B2 (en) * 2019-10-17 2021-06-29 Viasat, Inc. Antenna apparatus with integrated antenna array and low loss multi-layer interposer
US11296424B2 (en) * 2020-01-21 2022-04-05 Rockwell Collins, Inc. Bump mounted radiating element architecture
CN111740232B (zh) * 2020-08-26 2020-11-17 成都瑞迪威科技有限公司 一种瓦片式相控阵天线的馈电结构及其加工方法
CN112103637B (zh) * 2020-08-30 2022-09-02 西南电子技术研究所（中国电子科技集团公司第十研究所） 模块化星载Ka频段有源相控阵天线系统
KR20220141013A (ko) * 2021-04-12 2022-10-19 삼성전자주식회사 위상 시프터를 포함하는 안테나 구조 및 이를 포함하는 전자 장치
US20230065622A1 (en) 2021-09-02 2023-03-02 Raytheon Company Wafer-scale direct bonded array core block for an active electronically steerable array (aesa)
US11870142B2 (en) 2021-09-17 2024-01-09 Raytheon Company Tile to tile RF grounding

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6686885B1 (en) * 2002-08-09 2004-02-03 Northrop Grumman Corporation Phased array antenna for space based radar
CN104022321A (zh) * 2014-05-30 2014-09-03 中国电子科技集团公司第二十研究所 一种基于ltcc的微型瓦片式t/r组件
CN104332413A (zh) * 2014-05-30 2015-02-04 中国电子科技集团公司第十研究所 一体化集成t/r组件芯片的3d组装方法
WO2016053501A1 (en) * 2014-10-03 2016-04-07 Raytheon Company Transmit/receive daughter card wth integral circulator

Family Cites Families (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2015028A (en) 1932-04-12 1935-09-17 Us Ind Alcohol Co Holder for advertising material
US3528050A (en) 1969-05-02 1970-09-08 Holub Ind Inc Push-on type grounding clip
US4690471A (en) 1986-05-19 1987-09-01 Motorola, Inc. RF interconnect with triaxial self-alignment
JP2525545Y2 (ja) 1990-06-27 1997-02-12 日本電業工作株式会社 広帯域マイクロストリップアンテナ
US5172082A (en) 1991-04-19 1992-12-15 Hughes Aircraft Company Multi-octave bandwidth balun
JPH0567912A (ja) 1991-04-24 1993-03-19 Matsushita Electric Works Ltd 平面アンテナ
FR2683952A1 (fr) 1991-11-14 1993-05-21 Dassault Electronique Dispositif d'antenne microruban perfectionne, notamment pour transmissions telephoniques par satellite.
US5410281A (en) 1993-03-09 1995-04-25 Sierra Technologies, Inc. Microwave high power combiner/divider
JPH07106841A (ja) 1993-10-06 1995-04-21 Mitsubishi Electric Corp プリント化ダイポールアンテナ
US5434575A (en) 1994-01-28 1995-07-18 California Microwave, Inc. Phased array antenna system using polarization phase shifting
US5455546A (en) 1994-09-22 1995-10-03 Glenayre Electronics, Inc. High power radio frequency divider/combiner
US5644277A (en) 1995-02-27 1997-07-01 Hughes Aircraft Company Three-wire-line vertical interconnect structure for multilevel substrates
US5603620A (en) 1995-08-04 1997-02-18 Delco Electronics Corp. Integrated printed circuit connector and ground clip assembly
CA2250158C (en) 1996-04-03 2001-10-30 Johan Granholm Dual polarization antenna array with very low cross polarization and low side lobes
US6184832B1 (en) 1996-05-17 2001-02-06 Raytheon Company Phased array antenna
US5745079A (en) 1996-06-28 1998-04-28 Raytheon Company Wide-band/dual-band stacked-disc radiators on stacked-dielectric posts phased array antenna
US5880694A (en) 1997-06-18 1999-03-09 Hughes Electronics Corporation Planar low profile, wideband, wide-scan phased array antenna using a stacked-disc radiator
US5886590A (en) 1997-09-04 1999-03-23 Hughes Electronics Corporation Microstrip to coax vertical launcher using fuzz button and solderless interconnects
JP3556832B2 (ja) * 1998-05-22 2004-08-25 三菱電機株式会社 フェーズドアレーアンテナ
US6114997A (en) 1998-05-27 2000-09-05 Raytheon Company Low-profile, integrated radiator tiles for wideband, dual-linear and circular-polarized phased array applications
JP2000312112A (ja) 1998-09-22 2000-11-07 Matsushita Electric Ind Co Ltd パッチアンテナ装置
US6320542B1 (en) 1998-09-22 2001-11-20 Matsushita Electric Industrial Co., Ltd. Patch antenna apparatus with improved projection area
US6100775A (en) 1998-10-15 2000-08-08 Raytheon Company Vertical interconnect circuit for coplanar waveguides
WO2002023672A2 (en) 2000-09-15 2002-03-21 Raytheon Company Microelectromechanical phased array antenna
US6512487B1 (en) 2000-10-31 2003-01-28 Harris Corporation Wideband phased array antenna and associated methods
US6429816B1 (en) 2001-05-04 2002-08-06 Harris Corporation Spatially orthogonal signal distribution and support architecture for multi-beam phased array antenna
US6459415B1 (en) 2001-05-14 2002-10-01 Eleven Engineering Inc. Omni-directional planar antenna design
US6580402B2 (en) 2001-07-26 2003-06-17 The Boeing Company Antenna integrated ceramic chip carrier for a phased array antenna
US6867742B1 (en) 2001-09-04 2005-03-15 Raytheon Company Balun and groundplanes for decade band tapered slot antenna, and method of making same
US20030112200A1 (en) 2001-12-17 2003-06-19 Alcatel, Radio Frequency Systems, Inc. Horizontally polarized printed circuit antenna array
US6935866B2 (en) 2002-04-02 2005-08-30 Adc Telecommunications, Inc. Card edge coaxial connector
US6882247B2 (en) 2002-05-15 2005-04-19 Raytheon Company RF filtered DC interconnect
US7193390B2 (en) 2002-05-17 2007-03-20 Sony Corporation Apparatus for connecting secondary battery cells in series and method for controlling secondary battery cells connected in series
US6664867B1 (en) 2002-07-19 2003-12-16 Paratek Microwave, Inc. Tunable electromagnetic transmission structure for effecting coupling of electromagnetic signals
DE60305056T2 (de) 2002-10-24 2006-12-07 Centre National De La Recherche Scientifique (C.N.R.S.) Mehrfachstrahlantenne mit photonischem bandlückenmaterial
US6975267B2 (en) 2003-02-05 2005-12-13 Northrop Grumman Corporation Low profile active electronically scanned antenna (AESA) for Ka-band radar systems
US7180457B2 (en) 2003-07-11 2007-02-20 Raytheon Company Wideband phased array radiator
WO2005011057A1 (en) 2003-07-25 2005-02-03 Stichting Astron Dual polarised antenna device for an antenna array and method for manufacturing the same
US6876336B2 (en) 2003-08-04 2005-04-05 Harris Corporation Phased array antenna with edge elements and associated methods
US6856297B1 (en) 2003-08-04 2005-02-15 Harris Corporation Phased array antenna with discrete capacitive coupling and associated methods
US7315288B2 (en) 2004-01-15 2008-01-01 Raytheon Company Antenna arrays using long slot apertures and balanced feeds
US6977623B2 (en) 2004-02-17 2005-12-20 Harris Corporation Wideband slotted phased array antenna and associated methods
US7272880B1 (en) 2004-05-27 2007-09-25 Lockheed Martin Corporation Distributed load edge clamp
US7012572B1 (en) 2004-07-16 2006-03-14 Hrl Laboratories, Llc Integrated ultra wideband element card for array antennas
US7113142B2 (en) 2004-10-21 2006-09-26 The Boeing Company Design and fabrication methodology for a phased array antenna with integrated feed structure-conformal load-bearing concept
US7109942B2 (en) 2004-10-21 2006-09-19 The Boeing Company Structurally integrated phased array antenna aperture design and fabrication method
US7138952B2 (en) 2005-01-11 2006-11-21 Raytheon Company Array antenna with dual polarization and method
US7084827B1 (en) 2005-02-07 2006-08-01 Harris Corporation Phased array antenna with an impedance matching layer and associated methods
WO2007046271A1 (ja) 2005-10-18 2007-04-26 Nec Corporation 垂直信号経路、それを有するプリント基板及びそのプリント基板と半導体素子とを有する半導体パッケージ
US7358921B2 (en) 2005-12-01 2008-04-15 Harris Corporation Dual polarization antenna and associated methods
US7221322B1 (en) 2005-12-14 2007-05-22 Harris Corporation Dual polarization antenna array with inter-element coupling and associated methods
US7411472B1 (en) 2006-02-01 2008-08-12 Rockwell Collins, Inc. Low-loss integrated waveguide feed for wafer-scale heterogeneous layered active electronically scanned array
US8373597B2 (en) 2006-08-09 2013-02-12 Spx Corporation High-power-capable circularly polarized patch antenna apparatus and method
US8279131B2 (en) * 2006-09-21 2012-10-02 Raytheon Company Panel array
US7671696B1 (en) * 2006-09-21 2010-03-02 Raytheon Company Radio frequency interconnect circuits and techniques
US9019166B2 (en) * 2009-06-15 2015-04-28 Raytheon Company Active electronically scanned array (AESA) card
US9172145B2 (en) * 2006-09-21 2015-10-27 Raytheon Company Transmit/receive daughter card with integral circulator
US7489283B2 (en) * 2006-12-22 2009-02-10 The Boeing Company Phased array antenna apparatus and methods of manufacture
US20080169992A1 (en) 2007-01-16 2008-07-17 Harris Corporation Dual-polarization, slot-mode antenna and associated methods
EP1970952A3 (en) 2007-03-13 2009-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7948441B2 (en) 2007-04-12 2011-05-24 Raytheon Company Low profile antenna
US7688265B2 (en) 2007-09-18 2010-03-30 Raytheon Company Dual polarized low profile antenna
US7579997B2 (en) 2007-10-03 2009-08-25 The Boeing Company Advanced antenna integrated printed wiring board with metallic waveguide plate
US8031126B2 (en) 2007-11-13 2011-10-04 Raytheon Company Dual polarized antenna
GB0724684D0 (en) 2007-12-18 2009-01-07 Bae Systems Plc Anntenna Feed Module
CN102204017B (zh) 2008-09-09 2014-08-06 莫列斯公司 可灵活使用的连接器
US8706049B2 (en) * 2008-12-31 2014-04-22 Intel Corporation Platform integrated phased array transmit/receive module
JP5291205B2 (ja) 2009-02-18 2013-09-18 モレックス インコーポレイテド プリント回路基板用の垂直コネクタ
IL197906A (en) 2009-04-05 2014-09-30 Elta Systems Ltd Antenna arrays and method for creating them
US8325093B2 (en) 2009-07-31 2012-12-04 University Of Massachusetts Planar ultrawideband modular antenna array
US20110089531A1 (en) 2009-10-16 2011-04-21 Teledyne Scientific & Imaging, Llc Interposer Based Monolithic Microwave Integrate Circuit (iMMIC)
WO2011072629A1 (de) 2009-12-17 2011-06-23 Conti Temic Microelectronic Gmbh Leiterplatte mit mehreren übereinander angeordneten leiterplattenlagen mit einer bare-die-montage für den einsatz als getriebesteuerung
US9192047B2 (en) * 2010-10-01 2015-11-17 Saab Ab Mounting system for transmitter receiver modules of an active electronically scanned array
KR20120035394A (ko) 2010-10-05 2012-04-16 삼성전자주식회사 수직구조의 전송선로 트랜지션 및 랜드 그리드 어레이 접합를 이용한 단일 칩 패키지를 위한 장치
US8542151B2 (en) 2010-10-21 2013-09-24 Mediatek Inc. Antenna module and antenna unit thereof
US8547275B2 (en) * 2010-11-29 2013-10-01 Src, Inc. Active electronically scanned array antenna for hemispherical scan coverage
US8928544B2 (en) 2011-02-21 2015-01-06 Her Majesty The Queen In Right Of Canada As Represented By The Minister Of National Defence Wideband circularly polarized hybrid dielectric resonator antenna
US9112262B2 (en) 2011-06-02 2015-08-18 Brigham Young University Planar array feed for satellite communications
US9112270B2 (en) 2011-06-02 2015-08-18 Brigham Young Univeristy Planar array feed for satellite communications
US20130026586A1 (en) 2011-07-26 2013-01-31 Texas Instruments Incorporated Cross-loop antenna
US8786515B2 (en) 2011-08-30 2014-07-22 Harris Corporation Phased array antenna module and method of making same
TWI449475B (zh) 2012-01-09 2014-08-11 Novatek Microelectronics Corp 電路板
US8648454B2 (en) 2012-02-14 2014-02-11 International Business Machines Corporation Wafer-scale package structures with integrated antennas
US8780561B2 (en) 2012-03-30 2014-07-15 Raytheon Company Conduction cooling of multi-channel flip chip based panel array circuits
US9054410B2 (en) 2012-05-24 2015-06-09 Commscope Technologies Llc Dipole strength clip
US9537208B2 (en) 2012-11-12 2017-01-03 Raytheon Company Dual polarization current loop radiator with integrated balun
US10403511B2 (en) 2013-01-14 2019-09-03 Intel Corporation Backside redistribution layer patch antenna
US8921992B2 (en) * 2013-03-14 2014-12-30 Raytheon Company Stacked wafer with coolant channels
US9343816B2 (en) 2013-04-09 2016-05-17 Raytheon Company Array antenna and related techniques
WO2015006293A1 (en) 2013-07-08 2015-01-15 Qualcomm Incorporated Techniques for operating phased array antennas in millimeter-wave radio modules
US9136572B2 (en) 2013-07-26 2015-09-15 Raytheon Company Dual stripline tile circulator utilizing thick film post-fired substrate stacking
US9437929B2 (en) 2014-01-15 2016-09-06 Raytheon Company Dual polarized array antenna with modular multi-balun board and associated methods
US9472859B2 (en) 2014-05-20 2016-10-18 International Business Machines Corporation Integration of area efficient antennas for phased array or wafer scale array antenna applications
US9688529B2 (en) * 2014-06-10 2017-06-27 Qorvo Us, Inc. Glass wafer assembly
WO2015193433A2 (en) 2014-06-18 2015-12-23 X-Celeprint Limited Micro assembled high frequency devices and arrays
US9402301B2 (en) 2014-12-10 2016-07-26 Raytheon Company Vertical radio frequency module
US10297923B2 (en) * 2014-12-12 2019-05-21 The Boeing Company Switchable transmit and receive phased array antenna
EP3262711B1 (en) 2015-02-26 2020-11-18 The Government of the United States of America as represented by the Secretary of the Navy Planar ultrawideband modular antenna array having improved bandwidth
US9490519B2 (en) 2015-03-19 2016-11-08 James D Lilly Transmission line transformer antenna
CN204857954U (zh) 2015-08-06 2015-12-09 中国电子科技集团公司第三十八研究所 一种Ka频段宽角扫描相控阵天线
JP6748716B2 (ja) 2015-11-17 2020-09-02 ギャップウェーブス アーベー 自己接地型の壁面設置可能なボウタイアンテナ装置、同アンテナ装置のペタル、及びその製造方法
US10490907B2 (en) 2016-09-27 2019-11-26 Google Llc Suppression of surface waves in printed circuit board-based phased-array antennas
US10361485B2 (en) 2017-08-04 2019-07-23 Raytheon Company Tripole current loop radiating element with integrated circularly polarized feed

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6686885B1 (en) * 2002-08-09 2004-02-03 Northrop Grumman Corporation Phased array antenna for space based radar
CN104022321A (zh) * 2014-05-30 2014-09-03 中国电子科技集团公司第二十研究所 一种基于ltcc的微型瓦片式t/r组件
CN104332413A (zh) * 2014-05-30 2015-02-04 中国电子科技集团公司第十研究所 一体化集成t/r组件芯片的3d组装方法
WO2016053501A1 (en) * 2014-10-03 2016-04-07 Raytheon Company Transmit/receive daughter card wth integral circulator

Also Published As

Publication number Publication date
KR20190045941A (ko) 2019-05-03
US20180175476A1 (en) 2018-06-21
EP3555961A1 (en) 2019-10-23
US10541461B2 (en) 2020-01-21
WO2018111386A1 (en) 2018-06-21
TW201824330A (zh) 2018-07-01
CN109891674A (zh) 2019-06-14
JP6763087B2 (ja) 2020-09-30
EP3555961B1 (en) 2021-04-28
TWI690970B (zh) 2020-04-11
KR102193899B1 (ko) 2020-12-23
JP2020502782A (ja) 2020-01-23

Similar Documents

Publication Publication Date Title
CN109891674B (zh) 用于有源电子扫描阵列(aesa)的瓦片
EP3032651B1 (en) Switchable transmit and receive phased array antenna
EP3206256B1 (en) Scalable planar packaging architecture for actively scanned phased array antenna system
KR101853599B1 (ko) 3차원 마이크로구조체
US8643548B2 (en) Dual beam dual selectable polarization antenna
US7411472B1 (en) Low-loss integrated waveguide feed for wafer-scale heterogeneous layered active electronically scanned array
US7619567B2 (en) Integrated phased array antenna
EP2575213B1 (en) Co-phased, dual polarized antenna array with broadband and wide scan capability
TWI508370B (zh) 電子掃描陣列雷達（ａｅｓａ）卡
TW201328017A (zh) 介質天線以及天線模組
WO2019187758A1 (ja) アレイアンテナ
CN114424402A (zh) 具有集成天线阵列和低损耗多层内插器的天线设备
US12009574B2 (en) Integrated antenna array with beamformer IC chips having multiple surface interfaces
JP6067445B2 (ja) レーダ装置
EP4165783B1 (en) Integrated antenna array and beamformer ic chips with inter-stage amplification
JP6341983B2 (ja) レーダ装置
US20240154320A1 (en) Antenna apparatus employing coplanar waveguide interconnect between rf components
US20230395967A1 (en) Antenna array architecture with electrically conductive columns between substrates

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant