JP2020150031A - 半導体装置 - Google Patents
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- 238000009825 accumulation Methods 0.000 description 1
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- 238000009413 insulation Methods 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
Description
Claims (7)
- 第1導電形の第1半導体層を含む半導体部と、
前記半導体部の表面上に選択的に設けられた第1電極と、
前記半導体部の前記表面側に設けられたトレンチの内部に配置され、第1絶縁膜を介して前記半導体部から電気的に絶縁された制御電極と、
前記半導体部の前記表面上に設けられ、前記制御電極に電気的に接続された制御配線と、
を備え、
前記半導体部は、前記第1電極と前記第1半導体層との間に位置する第1領域と、前記制御配線と前記第1半導体層との間に位置する第2領域と、を含む第2導電形の第2半導体層と、前記第2半導体層の前記第1領域と前記第1電極との間に選択的に設けられた第1導電形の第3半導体層と、をさらに含み、
前記制御電極は、前記半導体部の前記表面に沿った第1方向に延在し、前記第1絶縁膜を介して前記第1半導体層、前記第2半導体層および前記第3半導体層の少なくとも一部に向き合い、第2絶縁膜を介して前記第1電極から電気的に絶縁され、前記第1電極と前記半導体部との間に位置する部分と、前記制御配線と前記半導体部との間に位置する部分と、を含み、前記第1方向に位置する第1端部と、前記第1方向において前記第1端部とは反対側に位置する第2端部と、を有し、
前記制御配線は、前記制御電極の前記第1端部に電気的に接続された第1配線部と、前記制御電極の前記第2端部に電気的に接続された第2配線部と、前記第1配線部と前記第2配線部との間に位置し、前記第1方向と交差する第2方向に、前記半導体部の前記表面に沿って延在し、前記第1端部と前記第2端部との間において前記第1方向に延在する一体の前記制御電極と交差する第3配線部と、を含み、
前記第2領域は、前記第1半導体層と前記第3配線部との間に位置し、
前記第3配線部は、前記制御電極と交差する位置において、前記制御電極と電気的に接続された半導体装置。 - 前記第1配線部および前記第2配線部は、前記第2方向に延在する請求項1記載の半導体装置。
- 前記第2半導体層の第2領域は、前記第1領域の第2導電形不純物よりも高濃度の第2導電形不純物濃度を含む請求項1または2に記載の半導体装置。
- 前記第2半導体層は、第3領域および第4領域をさらに含み、
前記第3領域は、前記第1半導体層と前記第1配線部との間に位置し、前記第4領域は、前記第1半導体層と前記第2配線部との間に位置し、
前記第3領域は、前記半導体部の前記表面に直交する第3方向において、前記制御電極の幅よりも広い幅を有し、
前記制御電極の前記第1端部は、前記第3領域の中に位置し、
前記第4領域は、前記第3方向において、前記制御電極の前記幅よりも広い幅を有し、
前記制御電極の前記第2端部は、前記第4領域の中に位置する請求項1〜3のいずれか1つに記載の半導体装置。 - 前記第2領域は、前記第3方向において、前記制御電極の前記幅よりも狭い幅を有する請求項4記載の半導体装置。
- 前記制御配線の前記第3配線部は、第3絶縁膜を介して前記制御電極上に設けられ、前記第3絶縁膜を貫くコンタクトプラグを介して前記制御電極に電気的に接続される請求項1〜5のいずれか1つに記載の半導体装置。
- 前記半導体部の裏面上に設けられた第2電極と、
前記第1半導体層と前記第2電極との間に設けられた第2導電形の第4半導体層と、
をさらに備えた請求項1〜6のいずれか1つに記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019044024A JP7222758B2 (ja) | 2019-03-11 | 2019-03-11 | 半導体装置 |
CN201910603265.3A CN111682059B (zh) | 2019-03-11 | 2019-07-05 | 半导体装置 |
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US11257937B2 (en) | 2022-02-22 |
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JP7222758B2 (ja) | 2023-02-15 |
CN111682059B (zh) | 2023-10-31 |
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