JP2020107681A - 配線基板、半導体装置、及び配線基板の製造方法 - Google Patents
配線基板、半導体装置、及び配線基板の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims abstract description 190
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- 239000011347 resin Substances 0.000 claims description 20
- 229920005989 resin Polymers 0.000 claims description 20
- 229910000679 solder Inorganic materials 0.000 claims description 13
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- 238000004806 packaging method and process Methods 0.000 abstract 1
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Abstract
Description
[配線基板の構成]
図1は、実施例に係る配線基板1の構成の一例を示す概略断面図である。以下では、図1の上側の面を「上面」と呼び、図1の下側の面を「下面」と呼ぶ。図1に示すように、配線基板1は、下側基板10と、上側基板20とを有する。下側基板10と上側基板20とは、接着層30によって接着されている。
次に、図2を参照して、実施例に係る配線基板1を用いて作製された半導体装置2について説明する。図2は、実施例に係る配線基板1を用いて作製された半導体装置2の構成の一例を示す概略断面図である。図2に示すように、半導体装置2は、下側基板10と、上側基板20と、下側基板10と上側基板20とを接着する接着層30とを有する。また、半導体装置2は、半導体チップ40と、アンダーフィル樹脂50と、チップ部品61と、補強部材62とを有する。下側基板10、上側基板20及び接着層30は、それぞれ、図1に示した下側基板10、上側基板20及び接着層30に相当する。
次に、図3A〜図3Iを参照して、実施例に係る配線基板1の製造方法について説明する。図3A〜図3Iは、実施例に係る配線基板1の製造方法の流れの一例を示す説明図である。
次に、図4A〜図4Cを参照して、実施例に係る半導体装置2の製造方法について説明する。図4A〜図4Cは、実施例に係る半導体装置2の製造方法の流れの一例を示す説明図である。
2 半導体装置
10 下側基板
11 電極
20 上側基板
22 電極
30 接着層
31 隆起部
40 半導体チップ
80 ボンディングツール
Claims (4)
- 第1の基板と、
前記第1の基板よりも外形が小さく、前記第1の基板上に搭載された第2の基板と、
前記第1の基板と前記第2の基板とを接着するとともに、前記第2の基板の側面と接するフィレットを有する接着層と、
を有し、
前記フィレットは、前記第2の基板の上面と同じ高さから前記第2の基板の上面よりも高い位置まで隆起する隆起部を有することを特徴とする配線基板。 - 前記隆起部は、前記第2の基板の外周に沿って枠状に形成され、且つ前記第2の基板の上面とともに有底状の空間を形成すること、を特徴とする請求項1に記載の配線基板。
- 請求項2に記載の配線基板と、
前記第2の基板の上面に搭載された電子部品と、
前記有底状の空間内に配置されたアンダーフィル樹脂と、
を有する半導体装置。 - 第1の基板と第2の基板とを接着する接着層が形成された前記第2の基板を、前記接着層を介して前記第1の基板上に配置する工程と、
前記接着層が前記第2の基板の側面と接触するフィレットを形成し、且つ前記フィレットに前記第2の基板の上面と同じ高さから前記第2の基板の上面よりも高い位置まで隆起する隆起部が形成されるまで、ボンディングツールで前記第2の基板を前記第1の基板に向かって押し付ける工程と、
前記ボンディングツールを加熱することで、前記接着層を硬化させつつ前記第2の基板の電極と前記第1の基板の電極とを半田付けする工程と、
を含むことを特徴とする配線基板の製造方法。
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