JP2020096144A - 素子アレイの製造方法と特定素子の除去方法 - Google Patents
素子アレイの製造方法と特定素子の除去方法 Download PDFInfo
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- JP2020096144A JP2020096144A JP2018234755A JP2018234755A JP2020096144A JP 2020096144 A JP2020096144 A JP 2020096144A JP 2018234755 A JP2018234755 A JP 2018234755A JP 2018234755 A JP2018234755 A JP 2018234755A JP 2020096144 A JP2020096144 A JP 2020096144A
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Abstract
Description
そこで、基板上に等間隔で形成した微小な発光ダイオード素子を選択的に剥離して、他の基板に対して素子を転写する技術が提案されている(たとえば特許文献1参照)。
粘着性シートの粘着層の表面に、所定の配列で素子を並べて付着させる工程と、
所定の配列で並べられた素子の内、特定の素子にレーザを照射し、前記特定の素子を前記粘着シートから除去する工程と、
前記粘着シートの表面に付着してある所定配列の素子を、直接または間接的に実装用基板上に転写する工程と、を有する。
素子形成用基板上に、前記素子を所定の配列で作り込む工程と、
前記素子形成用基板上に作り込まれた所定の配列の前記素子を、前記粘着性シートの粘着層の表面に転写する工程と、をさらに有してもよい。
粘着性シートの粘着層の表面に、所定の配列で素子を並べて付着させる工程と、
所定の配列で並べられた素子の内、特定の素子にレーザを照射し、前記特定の素子を前記粘着シートから除去し、前記粘着シートの表面には、その他の素子を残す工程と、を有する。
レーザ照射によって素子23aに加わるエネルギーが、素子23aと粘着層の界面に到達し、そのエネルギーが物理的な応力として粘着層と素子23aとの粘着を剥がす形で加わるため。
あるいは、レーザ照射によって素子23aに加わるエネルギーが直接素子に及ぼす外力として作用することとなり、その外力によって素子23aが剥がされることが考えられる。
20… 特定素子の除去装置
22… 基板(粘着シート)
22a… 基板本体
22b… 粘着層
23… 素子
23a… 特定の素子
24… 基板ステージ
25… 素子形成用基板
26… Z軸移動テーブル
26a… 設置台
28… Y軸移動ベース
29… レール
30… レーザ照射器具
32… レーザ出射部
34… 撮像装置
40… 回収機構
42… 気体吹付機構
50… 基板取り付け装置
52… 基板吸着器具
54… 回動ロッド
56… 支持ロッド
58… Y軸移動ブロック
59… レール
60… 仮置き台
L… レーザ光
La… 照射範囲
Y1… 処理位置
Y2… 取付位置
Y3… 受け渡し位置
粘着性シートの粘着層の表面に、所定の配列で素子が並べられた前記粘着性シートを準備する工程と、
所定の配列で並べられた素子の内、特定の素子にレーザを照射し、前記特定の素子を前記粘着シートから除去する工程と、
前記粘着シートの表面に付着してある所定配列の素子を、直接または間接的に実装用基板上に転写する工程と、を有する。
粘着性シートの粘着層の表面に、所定の配列で素子が並べられた前記粘着性シートを準備する工程と、
所定の配列で並べられた素子の内、特定の素子にレーザを照射し、前記特定の素子を前記粘着シートから除去し、前記粘着シートの表面には、その他の素子を残す工程と、を有する。
レーザ照射によって素子23aに加わるエネルギーが、素子23aと粘着層の界面に到達し、そのエネルギーが物理的な応力として粘着層と素子23aとの粘着を剥がす形で加わるためと考えられる。あるいは、レーザ照射によって素子23aに加わるエネルギーが直接素子に及ぼす外力として作用することとなり、その外力によって素子23aが剥がされることが考えられる。
Claims (15)
- 粘着性シートの粘着層の表面に、所定の配列で素子を並べて付着させる工程と、
所定の配列で並べられた素子の内、特定の素子にレーザを照射し、前記特定の素子を前記粘着シートから除去する工程と、
前記粘着シートの表面に付着してある所定配列の素子を、直接または間接的に実装用基板上に転写する工程と、を有する素子アレイの製造方法。 - 前記特定の不良な素子を前記粘着シートから除去した空の位置で、前記粘着シートの前記粘着層の表面に、別の良品な素子を付着させる工程をさらに有する請求項1に記載の素子アレイの製造方法。
- 素子形成用基板上に、前記素子を所定の配列で作り込む工程と、
前記素子形成用基板上に作り込まれた所定の配列の前記素子を、前記粘着性シートの粘着層の表面に転写する工程と、をさらに有する請求項1または2に記載の素子アレイの製造方法。 - 前記素子形成用基板上に作り込まれた所定の配列の前記素子を、それぞれ検査する工程をさらに有する請求項3に記載の素子アレイの製造方法。
- 前記粘着性シートの粘着層の表面に所定の配列で並べられた素子を、それぞれ検査する工程をさらに有する請求項1〜4のいずれかに記載の素子アレイの製造方法。
- 前記素子が表示素子である請求項1〜5のいずれかに記載の素子アレイの製造方法。
- 不良と判定された前記素子には、当該素子の平面形状に合わせた角型スポット形状の照射範囲で、前記レーザが照射される請求項1〜6のいずれかに記載の素子アレイの製造方法。
- 不良と判定された前記素子には、当該素子の平面形状の全体を含む範囲で、前記レーザが照射される請求項1〜7のいずれかに記載の素子アレイの製造方法。
- 不良と判定された前記素子には、3ショット以内のショット数で、前記レーザが照射されることにより、特定の不良な前記素子を前記粘着シートから弾き飛ばせるように、前記レーザの出力と波長が選択してある請求項1〜8のいずれかに記載の素子アレイの製造方法。
- 前記レーザの波長が532nm以下である請求項9に記載の素子アレイの製造方法。
- 粘着性シートの粘着層の表面に、所定の配列で素子を並べて付着させる工程と、
所定の配列で並べられた素子の内、特定の素子にレーザを照射し、前記特定の素子を前記粘着シートから除去し、前記粘着シートの表面には、その他の素子を残す工程と、を有する特定素子の除去方法。 - 前記特定の素子には、当該素子の平面形状に合わせた角型スポット形状の照射範囲で、前記レーザが照射される請求項11に記載の特定素子の除去方法。
- 前記特定の素子には、当該素子の平面形状の全体を含む範囲で、前記レーザが照射される請求項11または12に記載の特定素子の除去方法。
- 前記特定の素子には、3ショット以内のショット数で、前記レーザが照射されることにより、前記特定の素子を前記粘着シートから弾き飛ばせるように、前記レーザの出力と波長が選択してある請求項11〜13のいずれかに記載の特定素子の除去方法。
- 前記レーザの波長が532nm以下である請求項14に記載の特定素子の除去方法。
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113130728A (zh) * | 2021-04-13 | 2021-07-16 | 东莞市中麒光电技术有限公司 | 一种led芯片巨量转移方法 |
KR20220036625A (ko) * | 2020-09-16 | 2022-03-23 | (주)에스티아이 | 발광 소자를 구비한 표시 장치의 개보수 장치 |
WO2022092014A1 (ja) | 2020-10-26 | 2022-05-05 | 三菱瓦斯化学株式会社 | 生体吸収性繊維状医療材料 |
KR20230115323A (ko) | 2021-03-26 | 2023-08-02 | 데쿠세리아루즈 가부시키가이샤 | 접속 필름 및 접속 구조체의 제조 방법 |
KR20230164139A (ko) | 2021-05-12 | 2023-12-01 | 데쿠세리아루즈 가부시키가이샤 | 접속 구조체의 제조 방법 및 접속 필름 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003077940A (ja) * | 2001-09-06 | 2003-03-14 | Sony Corp | 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法 |
JP2009508321A (ja) * | 2005-06-01 | 2009-02-26 | プラスティック ロジック リミテッド | 層選択レーザーアブレーションパターニング |
JP2011071272A (ja) * | 2009-09-25 | 2011-04-07 | Toshiba Corp | 半導体発光装置及びその製造方法 |
JP2015177028A (ja) * | 2014-03-14 | 2015-10-05 | スタンレー電気株式会社 | 半導体装置の製造方法 |
WO2016158264A1 (ja) * | 2015-03-30 | 2016-10-06 | ソニーセミコンダクタソリューションズ株式会社 | 電子デバイスおよび電子デバイスの製造方法 |
JP2017539088A (ja) * | 2015-08-18 | 2017-12-28 | ゴルテック.インク | マイクロ発光ダイオードの修復方法、製造方法、装置及び電子機器 |
WO2018223391A1 (en) * | 2017-06-09 | 2018-12-13 | Goertek. Inc | Micro-led array transfer method, manufacturing method and display device |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3544343B2 (ja) * | 2000-06-16 | 2004-07-21 | 松下電器産業株式会社 | 半導体集積回路の不良チップ除外装置 |
JP3890921B2 (ja) * | 2001-06-05 | 2007-03-07 | ソニー株式会社 | 素子の配列方法及び画像表示装置の製造方法 |
JP2003142666A (ja) * | 2001-07-24 | 2003-05-16 | Seiko Epson Corp | 素子の転写方法、素子の製造方法、集積回路、回路基板、電気光学装置、icカード、及び電子機器 |
US7744770B2 (en) | 2004-06-23 | 2010-06-29 | Sony Corporation | Device transfer method |
JP2011003667A (ja) * | 2009-06-17 | 2011-01-06 | Seiko Epson Corp | 半導体装置の製造方法および電子機器の製造方法 |
JPWO2013146487A1 (ja) * | 2012-03-30 | 2015-12-10 | コニカミノルタ株式会社 | レンズアレイ、レンズアレイの製造方法及び光学素子の製造方法 |
US9250509B2 (en) * | 2012-06-04 | 2016-02-02 | Applied Materials, Inc. | Optical projection array exposure system |
JP6008210B2 (ja) * | 2014-04-08 | 2016-10-19 | ウシオ電機株式会社 | レーザリフトオフ装置 |
JP6508468B2 (ja) * | 2015-07-24 | 2019-05-08 | 東芝ライテック株式会社 | 車両用照明装置、および車両用灯具 |
CN105518877B (zh) * | 2015-08-18 | 2018-06-12 | 歌尔股份有限公司 | 微发光二极管的预排除方法、制造方法、装置和电子设备 |
CN109196424A (zh) * | 2016-06-10 | 2019-01-11 | 应用材料公司 | 微型装置的无掩模并行取放转印 |
WO2018061896A1 (ja) * | 2016-09-29 | 2018-04-05 | 東レエンジニアリング株式会社 | 転写方法、実装方法、転写装置、及び実装装置 |
FR3065321B1 (fr) * | 2017-04-14 | 2019-06-21 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'un dispositif d'affichage emissif a led |
-
2018
- 2018-12-14 JP JP2018234755A patent/JP6911003B2/ja active Active
-
2019
- 2019-12-13 US US16/713,513 patent/US11101317B2/en active Active
- 2019-12-13 CN CN201911280544.7A patent/CN111326454B/zh active Active
-
2021
- 2021-07-07 JP JP2021112857A patent/JP7173228B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003077940A (ja) * | 2001-09-06 | 2003-03-14 | Sony Corp | 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法 |
JP2009508321A (ja) * | 2005-06-01 | 2009-02-26 | プラスティック ロジック リミテッド | 層選択レーザーアブレーションパターニング |
JP2011071272A (ja) * | 2009-09-25 | 2011-04-07 | Toshiba Corp | 半導体発光装置及びその製造方法 |
JP2015177028A (ja) * | 2014-03-14 | 2015-10-05 | スタンレー電気株式会社 | 半導体装置の製造方法 |
WO2016158264A1 (ja) * | 2015-03-30 | 2016-10-06 | ソニーセミコンダクタソリューションズ株式会社 | 電子デバイスおよび電子デバイスの製造方法 |
JP2017539088A (ja) * | 2015-08-18 | 2017-12-28 | ゴルテック.インク | マイクロ発光ダイオードの修復方法、製造方法、装置及び電子機器 |
WO2018223391A1 (en) * | 2017-06-09 | 2018-12-13 | Goertek. Inc | Micro-led array transfer method, manufacturing method and display device |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220036625A (ko) * | 2020-09-16 | 2022-03-23 | (주)에스티아이 | 발광 소자를 구비한 표시 장치의 개보수 장치 |
KR102416253B1 (ko) | 2020-09-16 | 2022-07-05 | (주)에스티아이 | 발광 소자를 구비한 표시 장치의 개보수 장치 |
WO2022092014A1 (ja) | 2020-10-26 | 2022-05-05 | 三菱瓦斯化学株式会社 | 生体吸収性繊維状医療材料 |
KR20230115323A (ko) | 2021-03-26 | 2023-08-02 | 데쿠세리아루즈 가부시키가이샤 | 접속 필름 및 접속 구조체의 제조 방법 |
CN113130728A (zh) * | 2021-04-13 | 2021-07-16 | 东莞市中麒光电技术有限公司 | 一种led芯片巨量转移方法 |
KR20230164139A (ko) | 2021-05-12 | 2023-12-01 | 데쿠세리아루즈 가부시키가이샤 | 접속 구조체의 제조 방법 및 접속 필름 |
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