JP2020076975A - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP2020076975A JP2020076975A JP2019186586A JP2019186586A JP2020076975A JP 2020076975 A JP2020076975 A JP 2020076975A JP 2019186586 A JP2019186586 A JP 2019186586A JP 2019186586 A JP2019186586 A JP 2019186586A JP 2020076975 A JP2020076975 A JP 2020076975A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- thin film
- film transistor
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims abstract description 205
- 239000003990 capacitor Substances 0.000 claims abstract description 171
- 239000000758 substrate Substances 0.000 claims abstract description 93
- 239000000463 material Substances 0.000 claims abstract description 59
- 238000003860 storage Methods 0.000 claims abstract description 57
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 17
- 229920005591 polysilicon Polymers 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 952
- 230000000903 blocking effect Effects 0.000 claims description 116
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 110
- 239000011229 interlayer Substances 0.000 claims description 102
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 82
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 35
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 35
- 239000002356 single layer Substances 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 229920001721 polyimide Polymers 0.000 description 54
- 239000004642 Polyimide Substances 0.000 description 51
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 28
- 239000001257 hydrogen Substances 0.000 description 28
- 229910052739 hydrogen Inorganic materials 0.000 description 28
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 20
- 238000000034 method Methods 0.000 description 18
- 239000010936 titanium Substances 0.000 description 17
- 230000008569 process Effects 0.000 description 16
- 239000010408 film Substances 0.000 description 14
- 239000010949 copper Substances 0.000 description 13
- 230000004888 barrier function Effects 0.000 description 12
- 239000011651 chromium Substances 0.000 description 12
- 238000005538 encapsulation Methods 0.000 description 12
- 239000010931 gold Substances 0.000 description 12
- 238000007789 sealing Methods 0.000 description 11
- 125000006850 spacer group Chemical group 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 239000007769 metal material Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 229910052779 Neodymium Inorganic materials 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920001568 phenolic resin Polymers 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- 229920006122 polyamide resin Polymers 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- -1 (indium-zinc-oxide) Chemical class 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229960001296 zinc oxide Drugs 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
本明細書の課題は、以上において言及した課題に制限されず、言及されていないまた他の課題は、下記の記載から当業者に明確に理解され得るだろう。
第1薄膜トランジスタ120の第1ソース電極122及び第1ドレイン電極123は、第1ゲート絶縁層112、第1層間絶縁層113、第2バッファ層114、及び第2層間絶縁層116に形成されたコンタクトホールを通して第1薄膜トランジスタ120の第1アクティブ層121と連結され得る。従って、第1薄膜トランジスタ120の第1ソース電極122は、第1ゲート絶縁層112、第1層間絶縁層113、第2バッファ層114、及び第2層間絶縁層116に形成されたコンタクトホールを通して第1アクティブ層121の第1ソース領域121bと連結され得る。そして、第1薄膜トランジスタ120の第1ドレイン電極123は、第1ゲート絶縁層112、第1層間絶縁層113、第2バッファ層114、及び第2層間絶縁層116に形成されたコンタクトホールを通して第1アクティブ層121の第1ドレイン領域121cと連結され得る。
本明細書の実施例によれば、第2バッファ層は、第2上部バッファ層及び第2下部バッファ層を含み、第2上部バッファ層は、酸化シリコン(SiOx)層であり、第2下部バッファ層は、前記窒化シリコン(SiNx)層であってよい。
Claims (23)
- 第1基板、第2基板、及び前記第1基板と前記第2基板との間の無機絶縁層を含む基板と、
n個の層を含み、nは、奇数である、前記基板上の第1バッファ層と、
前記第1バッファ層上の第1薄膜トランジスタ、第2薄膜トランジスタ、及びストレージキャパシタとを含み、
前記第1薄膜トランジスタは、低温ポリシリコン物質からなる第1アクティブ層を含み、
前記第2薄膜トランジスタは、酸化物半導体物質からなる第2アクティブ層を含み、
前記ストレージキャパシタは、第1キャパシタ電極及び第2キャパシタ電極を含む、表示装置。 - 前記第1キャパシタ電極及び前記第2キャパシタ電極の少なくともいずれか一つの延長部であり、前記第2アクティブ層と重畳する遮断層をさらに含む、請求項1に記載の表示装置。
- 前記無機絶縁層は、酸化シリコン(SiOx)または窒化シリコン(SiNx)物質からなる、請求項1に記載の表示装置。
- n=1である場合、
前記第1バッファ層は、酸化シリコン(SiOx)または窒化シリコン(SiNx)物質からなる単一層である、請求項1に記載の表示装置。 - nが3以上である場合、
前記第1バッファ層は、酸化シリコン(SiOx)層と窒化シリコン(SiNx)層が交互に形成された多重層である、請求項1に記載の表示装置。 - 前記第1バッファ層のn個の層は、
前記基板と接触し、前記酸化シリコン(SiOx)物質からなる下部層と、
前記第1アクティブ層と接触し、酸化シリコン(SiOx)物質からなる上部層と、
前記上部層と前記下部層との間の中間層とを含む、請求項5に記載の表示装置。 - 前記上部層の厚さは、前記中間層及び前記下部層のそれぞれの厚さより大きい、請求項6に記載の表示装置。
- 前記中間層のそれぞれの厚さと前記下部層の厚さは、同じである、請求項7に記載の表示装置。
- 基板と、
前記基板上の第1バッファ層と、
低温ポリシリコン物質からなる第1アクティブ層、第1ゲート絶縁層を挟んで前記第1アクティブ層と重畳する第1ゲート電極、及び前記第1アクティブ層と電気的に連結される第1ソース電極及び第1ドレイン電極を含む第1薄膜トランジスタと、
酸化物半導体からなる第2アクティブ層、第2ゲート絶縁層を挟んで前記第2アクティブ層と重畳する第2ゲート電極、及び前記第2アクティブ層と電気的に連結される第2ソース電極及び第2ドレイン電極を含む第2薄膜トランジスタと、
前記第1ゲート電極と同じ層の第1キャパシタ電極及び第1層間絶縁層を挟んで前記第1キャパシタ電極と重畳する第2キャパシタ電極を含むストレージキャパシタと、
前記第2アクティブ層と重畳する前記第2キャパシタ電極の延長部である第1遮断層を含む、表示装置。 - 前記基板は、第1基板、第2基板、及び前記第1基板と前記第2基板との間に配置された無機絶縁層を含む、請求項9に記載の表示装置。
- 前記第1遮断層と前記第2アクティブ層との間に配置され、酸化シリコン(SiOx)層及び窒化シリコン(SiNx)層を含む複数の層からなる第2バッファ層をさらに含み、
前記第2バッファ層は、前記第2アクティブ層と接触する最上部層である酸化シリコン(SiOx)層及び前記最上部層と前記第1遮断層との間の少なくとも一つの窒化シリコン(SiNx)層を含む、請求項10に記載の表示装置。 - 前記第2アクティブ層及び前記第1遮断層と重畳する前記第1キャパシタ電極の延長部である第2遮断層をさらに含む、請求項10に記載の表示装置。
- 前記第2バッファ層は、第2上部バッファ層及び第2下部バッファ層を含み、
前記第2上部バッファ層は、前記酸化シリコン(SiOx)層であり、前記第2下部バッファ層は、前記窒化シリコン(SiNx)層である、請求項11に記載の表示装置。 - 前記第2上部バッファ層は、二酸化ケイ素(SiO2)層である、請求項13に記載の表示装置。
- 前記第1薄膜トランジスタの前記第1アクティブ層は、前記第1バッファ層上にあり、
前記第1ゲート絶縁層は、前記第1アクティブ層及び前記第1バッファ層上にあり、
前記第1薄膜トランジスタの前記第1ゲート電極及び前記ストレージキャパシタの前記第1キャパシタ電極は、前記第1ゲート絶縁層上にあり、
前記第1層間絶縁層は、前記第1ゲート電極及び前記第1キャパシタ電極上にあり、
前記第1キャパシタ電極と重畳する前記ストレージキャパシタの前記第2キャパシタ電極及び前記第2アクティブ層と重畳する前記第1遮断層は、前記第1層間絶縁層上にあり、
前記第2バッファ層は、前記第2キャパシタ電極、前記第1遮断層、及び前記第1層間絶縁層上にあり、
前記第2薄膜トランジスタの第2アクティブ層は、前記第2バッファ層上にあり、
前記第2ゲート絶縁層は、前記第2アクティブ層上にあり、
前記第2薄膜トランジスタの第2ゲート電極は、前記第2ゲート絶縁層上にあり、
前記第2層間絶縁層は、前記第2ゲート電極、前記第2アクティブ層、及び前記第2バッファ層上にあり、前記第1薄膜トランジスタの前記第1ソース電極及び前記第1ドレイン電極と、前記第2薄膜トランジスタの前記第2ソース電極及び前記第2ドレイン電極は、前記第2層間絶縁層上にある、請求項11に記載の表示装置。 - 前記第2ソース電極及び前記第2ドレイン電極は、前記第2層間絶縁層のコンタクトホールを通して前記第2アクティブ層と電気的に連結される、請求項15に記載の表示装置。
- 前記第1ソース電極及び前記第1ドレイン電極は、前記第2層間絶縁層、前記第2バッファ層、前記第1層間絶縁層、及び前記第1ゲート絶縁層のコンタクトホールを通して前記第1アクティブ層と電気的に連結される、請求項15に記載の表示装置。
- 前記第2層間絶縁層上に配置され、前記ストレージキャパシタの前記第2キャパシタ電極と前記第2薄膜トランジスタの前記第2ドレイン電極を電気的に連結する連結電極をさらに含み、前記連結電極は、前記第2ドレイン電極と互いに連結された一体型である、請求項15に記載の表示装置。
- 前記連結電極は、前記第2層間絶縁層及び前記第2バッファ層のコンタクトホールを通して前記第2キャパシタ電極と電気的に連結される、請求項18に記載の表示装置。
- 前記第2層間絶縁層上に配置され、前記ストレージキャパシタの前記第2キャパシタ電極と前記第2薄膜トランジスタの前記第2ドレイン電極を電気的に連結する連結電極をさらに含み、
前記連結電極は、前記第2ドレイン電極と一体型に連結された第2連結電極と、前記第2連結電極と前記第2キャパシタ電極を連結する第1連結電極を含む、請求項15に記載の表示装置。 - 前記第1連結電極と前記第2連結電極は、前記第2層間絶縁層及び前記第2バッファ層のコンタクトホールを通して前記第2キャパシタ電極と電気的に連結される、請求項20に記載の表示装置。
- 基板と、
前記基板上の第1バッファ層と、
低温ポリシリコン物質からなる第1アクティブ層、第1ゲート絶縁層を挟んで前記第1アクティブ層と重畳する第1ゲート電極、及び前記第1アクティブ層と電気的に連結される第1ソース電極及び第1ドレイン電極を含む第1薄膜トランジスタと、
酸化物半導体からなる第2アクティブ層、第2ゲート絶縁層を挟んで前記第2アクティブ層と重畳する第2ゲート電極、及び前記第2アクティブ層と電気的に連結される第2ソース電極及び第2ドレイン電極を含む第2薄膜トランジスタと、
前記第1ゲート電極と同じ層の第1キャパシタ電極及び第1層間絶縁層を挟んで前記第1キャパシタ電極と重畳する第2キャパシタ電極を含むストレージキャパシタと、
前記第2アクティブ層と重畳する前記第1キャパシタ電極の延長部である第1遮断層とを含む、表示装置。 - 前記第2アクティブ層及び前記第1遮断層と重畳する前記第2キャパシタ電極の延長部である第2遮断層をさらに含む、請求項22に記載の表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020180136203A KR20200052782A (ko) | 2018-11-07 | 2018-11-07 | 표시 장치 |
KR10-2018-0136203 | 2018-11-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020076975A true JP2020076975A (ja) | 2020-05-21 |
JP6916256B2 JP6916256B2 (ja) | 2021-08-11 |
Family
ID=69062192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019186586A Active JP6916256B2 (ja) | 2018-11-07 | 2019-10-10 | 表示装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US11063068B2 (ja) |
JP (1) | JP6916256B2 (ja) |
KR (1) | KR20200052782A (ja) |
CN (2) | CN116995080A (ja) |
DE (1) | DE102019129838A1 (ja) |
GB (1) | GB2580210B (ja) |
TW (1) | TWI729456B (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200060071A (ko) * | 2018-11-22 | 2020-05-29 | 엘지디스플레이 주식회사 | 표시 장치 |
WO2020231398A1 (en) * | 2019-05-13 | 2020-11-19 | Hewlett-Packard Development Company, L.P. | Thin-film transistors |
KR20200143562A (ko) * | 2019-06-13 | 2020-12-24 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판 및 이를 구비한 디스플레이 장치 |
KR102662726B1 (ko) * | 2019-06-19 | 2024-05-02 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR20210086345A (ko) * | 2019-12-31 | 2021-07-08 | 엘지디스플레이 주식회사 | 산화물 반도체 패턴을 포함하는 디스플레이 장치 |
KR102512014B1 (ko) * | 2020-05-21 | 2023-03-21 | 삼성디스플레이 주식회사 | 표시 장치 |
CN111933681A (zh) | 2020-09-07 | 2020-11-13 | 深圳市华星光电半导体显示技术有限公司 | 顶发光amoled显示面板、制作方法以及显示装置 |
KR20220033638A (ko) | 2020-09-09 | 2022-03-17 | 삼성디스플레이 주식회사 | 표시 장치 |
CN112420954B (zh) * | 2020-11-18 | 2022-07-12 | 武汉华星光电半导体显示技术有限公司 | 显示面板及其制作方法 |
CN115280500B (zh) * | 2020-12-21 | 2024-04-19 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、显示装置 |
KR20220095745A (ko) * | 2020-12-30 | 2022-07-07 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
KR20220096626A (ko) * | 2020-12-31 | 2022-07-07 | 엘지디스플레이 주식회사 | 표시 장치 |
CN114512548A (zh) * | 2022-02-25 | 2022-05-17 | 武汉华星光电半导体显示技术有限公司 | 薄膜晶体管、oled显示面板 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010010186A (ja) * | 2008-06-24 | 2010-01-14 | Kyodo Printing Co Ltd | フレキシブル有機elディスプレイ及びその製造方法 |
WO2012144499A1 (ja) * | 2011-04-22 | 2012-10-26 | 旭硝子株式会社 | 積層体、その製造方法及び用途 |
US20160064421A1 (en) * | 2014-08-29 | 2016-03-03 | Lg Display Co., Ltd. | Thin film transistor substrate and display device using the same |
US20170155000A1 (en) * | 2015-11-26 | 2017-06-01 | Lg Display Co., Ltd. | Thin film transistor substrate and display using the same |
JP2017536646A (ja) * | 2014-09-24 | 2017-12-07 | アップル インコーポレイテッド | シリコン及び半導体酸化物の薄膜トランジスタディスプレイ |
JP2018117154A (ja) * | 2013-08-26 | 2018-07-26 | アップル インコーポレイテッド | シリコン薄膜トランジスタ及び半導体酸化物薄膜トランジスタを有するディスプレイ |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW575777B (en) | 2001-03-30 | 2004-02-11 | Sanyo Electric Co | Active matrix type display device |
KR101782557B1 (ko) * | 2010-10-25 | 2017-09-28 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치 및 그 제조 방법 |
CN105051906B (zh) * | 2013-03-15 | 2018-12-07 | 应用材料公司 | 用于tft的金属氧化物半导体的缓冲层 |
JP6101357B2 (ja) * | 2013-10-09 | 2017-03-22 | シャープ株式会社 | 半導体装置およびその製造方法 |
KR102180037B1 (ko) | 2013-11-06 | 2020-11-18 | 삼성디스플레이 주식회사 | 가요성 표시 장치 및 그 제조 방법 |
KR102414469B1 (ko) * | 2014-03-14 | 2022-06-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 회로 시스템 |
CN104078424B (zh) | 2014-06-30 | 2017-02-15 | 京东方科技集团股份有限公司 | 低温多晶硅tft阵列基板及其制备方法、显示装置 |
KR102226236B1 (ko) | 2014-10-13 | 2021-03-11 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
WO2017027704A1 (en) * | 2015-08-11 | 2017-02-16 | Cambridge Electronics, Inc. | Semiconductor structure with a spacer layer |
JP6673731B2 (ja) * | 2016-03-23 | 2020-03-25 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
US9985082B2 (en) * | 2016-07-06 | 2018-05-29 | Lg Display Co., Ltd. | Organic light emitting display device comprising multi-type thin film transistor and method of manufacturing the same |
KR102626961B1 (ko) * | 2016-07-27 | 2024-01-17 | 엘지디스플레이 주식회사 | 하이브리드 타입의 박막 트랜지스터 및 이를 이용한 유기발광 표시장치 |
KR20180024817A (ko) * | 2016-08-31 | 2018-03-08 | 엘지디스플레이 주식회사 | 멀티 타입의 박막 트랜지스터를 포함하는 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법 |
KR20180061723A (ko) | 2016-11-30 | 2018-06-08 | 엘지디스플레이 주식회사 | 멀티 타입의 박막 트랜지스터를 포함하는 유기발광 표시장치 |
KR20180076661A (ko) | 2016-12-28 | 2018-07-06 | 엘지디스플레이 주식회사 | 표시 장치용 기판과 그를 포함하는 표시 장치 |
US10249695B2 (en) * | 2017-03-24 | 2019-04-02 | Apple Inc. | Displays with silicon and semiconducting-oxide top-gate thin-film transistors |
KR20180136203A (ko) | 2017-06-14 | 2018-12-24 | 강병환 | 블루투스 청각장애인 이어폰 |
CN107507841B (zh) * | 2017-09-22 | 2021-01-22 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
CN108198862B (zh) * | 2017-12-28 | 2020-12-08 | 友达光电(昆山)有限公司 | 一种低温多晶硅晶体管及其显示装置 |
-
2018
- 2018-11-07 KR KR1020180136203A patent/KR20200052782A/ko not_active Application Discontinuation
-
2019
- 2019-08-14 TW TW108129006A patent/TWI729456B/zh active
- 2019-09-19 US US16/575,917 patent/US11063068B2/en active Active
- 2019-09-29 CN CN202311205171.3A patent/CN116995080A/zh active Pending
- 2019-09-29 CN CN201910930701.8A patent/CN111162090B/zh active Active
- 2019-10-10 JP JP2019186586A patent/JP6916256B2/ja active Active
- 2019-11-06 DE DE102019129838.5A patent/DE102019129838A1/de active Pending
- 2019-11-07 GB GB1916211.4A patent/GB2580210B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010010186A (ja) * | 2008-06-24 | 2010-01-14 | Kyodo Printing Co Ltd | フレキシブル有機elディスプレイ及びその製造方法 |
WO2012144499A1 (ja) * | 2011-04-22 | 2012-10-26 | 旭硝子株式会社 | 積層体、その製造方法及び用途 |
JP2018117154A (ja) * | 2013-08-26 | 2018-07-26 | アップル インコーポレイテッド | シリコン薄膜トランジスタ及び半導体酸化物薄膜トランジスタを有するディスプレイ |
US20160064421A1 (en) * | 2014-08-29 | 2016-03-03 | Lg Display Co., Ltd. | Thin film transistor substrate and display device using the same |
JP2017536646A (ja) * | 2014-09-24 | 2017-12-07 | アップル インコーポレイテッド | シリコン及び半導体酸化物の薄膜トランジスタディスプレイ |
US20170155000A1 (en) * | 2015-11-26 | 2017-06-01 | Lg Display Co., Ltd. | Thin film transistor substrate and display using the same |
Also Published As
Publication number | Publication date |
---|---|
CN116995080A (zh) | 2023-11-03 |
US20200144309A1 (en) | 2020-05-07 |
CN111162090B (zh) | 2023-10-10 |
GB201916211D0 (en) | 2019-12-25 |
DE102019129838A1 (de) | 2020-05-07 |
TWI729456B (zh) | 2021-06-01 |
TW202036895A (zh) | 2020-10-01 |
GB2580210B (en) | 2021-11-24 |
GB2580210A (en) | 2020-07-15 |
JP6916256B2 (ja) | 2021-08-11 |
CN111162090A (zh) | 2020-05-15 |
US11063068B2 (en) | 2021-07-13 |
KR20200052782A (ko) | 2020-05-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6916256B2 (ja) | 表示装置 | |
US10714557B2 (en) | Substrate for display device and display device including the same | |
US11765937B2 (en) | Display device | |
US11056509B2 (en) | Display device having a plurality of thin-film transistors with different semiconductors | |
US11765935B2 (en) | Display apparatus | |
US20240090266A1 (en) | Display Device | |
KR102050434B1 (ko) | 플렉서블 유기전계 발광소자 및 그 제조방법 | |
KR101878187B1 (ko) | 유기 발광 표시 장치 및 그 제조 방법 | |
US20220115625A1 (en) | Display Substrate and Preparation Method Thereof, and Display Device | |
KR20180068634A (ko) | 유기 발광 표시 장치 | |
KR101799034B1 (ko) | 유기전계 발광소자용 기판 및 그 제조 방법 | |
US20230157089A1 (en) | Display Apparatus | |
KR101484966B1 (ko) | 어레이 기판 및 이의 제조방법 | |
CN110299395B (zh) | 基板、包括该基板的显示装置以及该显示装置的制造方法 | |
JP7152448B2 (ja) | ディスプレイ装置 | |
KR20150059196A (ko) | 유기 발광 표시 장치 및 이의 제조 방법 | |
KR20210004794A (ko) | 표시 장치 | |
KR102683138B1 (ko) | 표시 장치 | |
EP4398301A2 (en) | Substrate for display device and display device including the same | |
KR20190069952A (ko) | 표시 장치 | |
KR20100041964A (ko) | 듀얼플레이트 방식의 유기전계 발광소자 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191010 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20201030 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201117 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210217 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210617 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210715 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6916256 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |