JP2020053419A5 - - Google Patents
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- JP2020053419A5 JP2020053419A5 JP2018177863A JP2018177863A JP2020053419A5 JP 2020053419 A5 JP2020053419 A5 JP 2020053419A5 JP 2018177863 A JP2018177863 A JP 2018177863A JP 2018177863 A JP2018177863 A JP 2018177863A JP 2020053419 A5 JP2020053419 A5 JP 2020053419A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor device
- manufacturing
- modification
- interface layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018177863A JP6903040B2 (ja) | 2018-09-21 | 2018-09-21 | 半導体装置の製造方法、基板処理装置、およびプログラム |
| TW108122897A TWI813714B (zh) | 2018-09-21 | 2019-06-28 | 半導體裝置之製造方法、基板處理裝置及記錄媒體 |
| CN201910738427.4A CN110942976B (zh) | 2018-09-21 | 2019-08-09 | 半导体器件的制造方法及衬底处理装置 |
| KR1020190112195A KR102226603B1 (ko) | 2018-09-21 | 2019-09-10 | 반도체 장치의 제조 방법, 기판 처리 장치, 및 프로그램 |
| SG10201908412UA SG10201908412UA (en) | 2018-09-21 | 2019-09-11 | Method of manufacturing semiconductor device, substrate processing apparatus, and program |
| US16/570,452 US11081362B2 (en) | 2018-09-21 | 2019-09-13 | Method of manufacturing semiconductor device, and recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018177863A JP6903040B2 (ja) | 2018-09-21 | 2018-09-21 | 半導体装置の製造方法、基板処理装置、およびプログラム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020053419A JP2020053419A (ja) | 2020-04-02 |
| JP2020053419A5 true JP2020053419A5 (https=) | 2020-05-14 |
| JP6903040B2 JP6903040B2 (ja) | 2021-07-14 |
Family
ID=69884686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018177863A Active JP6903040B2 (ja) | 2018-09-21 | 2018-09-21 | 半導体装置の製造方法、基板処理装置、およびプログラム |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11081362B2 (https=) |
| JP (1) | JP6903040B2 (https=) |
| KR (1) | KR102226603B1 (https=) |
| CN (1) | CN110942976B (https=) |
| SG (1) | SG10201908412UA (https=) |
| TW (1) | TWI813714B (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023095374A1 (ja) | 2021-11-26 | 2023-06-01 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及び基板処理方法 |
| JP2025111887A (ja) * | 2024-01-18 | 2025-07-31 | 東京エレクトロン株式会社 | シリコン酸化膜の改質方法及び基板処理装置 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2702430B2 (ja) * | 1995-01-27 | 1998-01-21 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5968324A (en) * | 1995-12-05 | 1999-10-19 | Applied Materials, Inc. | Method and apparatus for depositing antireflective coating |
| JP2004022902A (ja) * | 2002-06-18 | 2004-01-22 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2004175927A (ja) | 2002-11-27 | 2004-06-24 | Canon Inc | 表面改質方法 |
| JP2006216809A (ja) * | 2005-02-04 | 2006-08-17 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP2008053308A (ja) | 2006-08-22 | 2008-03-06 | Nec Electronics Corp | 半導体装置の製造方法およびプラズマ処理装置 |
| JP2009182000A (ja) * | 2008-01-29 | 2009-08-13 | Panasonic Corp | 半導体装置およびその製造方法 |
| WO2009099252A1 (ja) * | 2008-02-08 | 2009-08-13 | Tokyo Electron Limited | 絶縁膜のプラズマ改質処理方法 |
| JP4636133B2 (ja) | 2008-07-22 | 2011-02-23 | 東京エレクトロン株式会社 | 窒化チタン膜の改質方法及び改質装置 |
| US9431237B2 (en) * | 2009-04-20 | 2016-08-30 | Applied Materials, Inc. | Post treatment methods for oxide layers on semiconductor devices |
| TW201118929A (en) | 2009-11-24 | 2011-06-01 | Chunghwa Picture Tubes Ltd | Method for forming crystalline silicon film |
| JP2011168881A (ja) | 2010-01-25 | 2011-09-01 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
| KR101129513B1 (ko) * | 2010-04-28 | 2012-03-29 | 동국대학교 산학협력단 | 실리콘적층 사파이어 박막의 제조방법 |
| JP5663384B2 (ja) * | 2011-04-19 | 2015-02-04 | 三菱電機株式会社 | 絶縁膜の製造方法 |
| TW201301403A (zh) * | 2011-06-24 | 2013-01-01 | United Microelectronics Corp | Ｍｏｓ電晶體的製作方法、鰭式場效電晶體及其製作方法 |
| KR101576637B1 (ko) * | 2014-07-15 | 2015-12-10 | 주식회사 유진테크 | 고종횡비를 가지는 오목부 상에 절연막을 증착하는 방법 |
| US9214333B1 (en) * | 2014-09-24 | 2015-12-15 | Lam Research Corporation | Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD |
| US10354860B2 (en) * | 2015-01-29 | 2019-07-16 | Versum Materials Us, Llc | Method and precursors for manufacturing 3D devices |
| JP6607795B2 (ja) | 2016-01-25 | 2019-11-20 | 東京エレクトロン株式会社 | 基板処理装置 |
| US10529554B2 (en) * | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
| US10062575B2 (en) * | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
| US9847221B1 (en) * | 2016-09-29 | 2017-12-19 | Lam Research Corporation | Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing |
| US11037780B2 (en) * | 2017-12-12 | 2021-06-15 | Asm Ip Holding B.V. | Method for manufacturing semiconductor device with helium-containing gas |
-
2018
- 2018-09-21 JP JP2018177863A patent/JP6903040B2/ja active Active
-
2019
- 2019-06-28 TW TW108122897A patent/TWI813714B/zh active
- 2019-08-09 CN CN201910738427.4A patent/CN110942976B/zh active Active
- 2019-09-10 KR KR1020190112195A patent/KR102226603B1/ko active Active
- 2019-09-11 SG SG10201908412UA patent/SG10201908412UA/en unknown
- 2019-09-13 US US16/570,452 patent/US11081362B2/en active Active
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