JP6903040B2 - 半導体装置の製造方法、基板処理装置、およびプログラム - Google Patents

半導体装置の製造方法、基板処理装置、およびプログラム Download PDF

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JP6903040B2
JP6903040B2 JP2018177863A JP2018177863A JP6903040B2 JP 6903040 B2 JP6903040 B2 JP 6903040B2 JP 2018177863 A JP2018177863 A JP 2018177863A JP 2018177863 A JP2018177863 A JP 2018177863A JP 6903040 B2 JP6903040 B2 JP 6903040B2
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film
modification
substrate
interface layer
helium
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JP2020053419A5 (https=
JP2020053419A (ja
Inventor
宥貴 山角
宥貴 山角
雅則 中山
雅則 中山
克典 舟木
克典 舟木
上田　立志
立志 上田
康寿 坪田
康寿 坪田
高見　栄子
栄子 高見
雄一郎 竹島
雄一郎 竹島
博登 井川
博登 井川
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Kokusai Electric Corp
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Kokusai Electric Corp
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Priority to JP2018177863A priority Critical patent/JP6903040B2/ja
Priority to TW108122897A priority patent/TWI813714B/zh
Priority to CN201910738427.4A priority patent/CN110942976B/zh
Priority to KR1020190112195A priority patent/KR102226603B1/ko
Priority to SG10201908412UA priority patent/SG10201908412UA/en
Priority to US16/570,452 priority patent/US11081362B2/en
Publication of JP2020053419A publication Critical patent/JP2020053419A/ja
Publication of JP2020053419A5 publication Critical patent/JP2020053419A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Automation & Control Theory (AREA)
  • Photovoltaic Devices (AREA)
JP2018177863A 2018-09-21 2018-09-21 半導体装置の製造方法、基板処理装置、およびプログラム Active JP6903040B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2018177863A JP6903040B2 (ja) 2018-09-21 2018-09-21 半導体装置の製造方法、基板処理装置、およびプログラム
TW108122897A TWI813714B (zh) 2018-09-21 2019-06-28 半導體裝置之製造方法、基板處理裝置及記錄媒體
CN201910738427.4A CN110942976B (zh) 2018-09-21 2019-08-09 半导体器件的制造方法及衬底处理装置
KR1020190112195A KR102226603B1 (ko) 2018-09-21 2019-09-10 반도체 장치의 제조 방법, 기판 처리 장치, 및 프로그램
SG10201908412UA SG10201908412UA (en) 2018-09-21 2019-09-11 Method of manufacturing semiconductor device, substrate processing apparatus, and program
US16/570,452 US11081362B2 (en) 2018-09-21 2019-09-13 Method of manufacturing semiconductor device, and recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018177863A JP6903040B2 (ja) 2018-09-21 2018-09-21 半導体装置の製造方法、基板処理装置、およびプログラム

Publications (3)

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JP2020053419A JP2020053419A (ja) 2020-04-02
JP2020053419A5 JP2020053419A5 (https=) 2020-05-14
JP6903040B2 true JP6903040B2 (ja) 2021-07-14

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US (1) US11081362B2 (https=)
JP (1) JP6903040B2 (https=)
KR (1) KR102226603B1 (https=)
CN (1) CN110942976B (https=)
SG (1) SG10201908412UA (https=)
TW (1) TWI813714B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023095374A1 (ja) 2021-11-26 2023-06-01 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及び基板処理方法
JP2025111887A (ja) * 2024-01-18 2025-07-31 東京エレクトロン株式会社 シリコン酸化膜の改質方法及び基板処理装置

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JP2702430B2 (ja) * 1995-01-27 1998-01-21 日本電気株式会社 半導体装置の製造方法
US5968324A (en) * 1995-12-05 1999-10-19 Applied Materials, Inc. Method and apparatus for depositing antireflective coating
JP2004022902A (ja) * 2002-06-18 2004-01-22 Fujitsu Ltd 半導体装置の製造方法
JP2004175927A (ja) 2002-11-27 2004-06-24 Canon Inc 表面改質方法
JP2006216809A (ja) * 2005-02-04 2006-08-17 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2008053308A (ja) 2006-08-22 2008-03-06 Nec Electronics Corp 半導体装置の製造方法およびプラズマ処理装置
JP2009182000A (ja) * 2008-01-29 2009-08-13 Panasonic Corp 半導体装置およびその製造方法
WO2009099252A1 (ja) * 2008-02-08 2009-08-13 Tokyo Electron Limited 絶縁膜のプラズマ改質処理方法
JP4636133B2 (ja) 2008-07-22 2011-02-23 東京エレクトロン株式会社 窒化チタン膜の改質方法及び改質装置
US9431237B2 (en) * 2009-04-20 2016-08-30 Applied Materials, Inc. Post treatment methods for oxide layers on semiconductor devices
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KR101129513B1 (ko) * 2010-04-28 2012-03-29 동국대학교 산학협력단 실리콘적층 사파이어 박막의 제조방법
JP5663384B2 (ja) * 2011-04-19 2015-02-04 三菱電機株式会社 絶縁膜の製造方法
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Publication number Publication date
US20200098587A1 (en) 2020-03-26
US11081362B2 (en) 2021-08-03
TWI813714B (zh) 2023-09-01
CN110942976A (zh) 2020-03-31
TW202013497A (zh) 2020-04-01
SG10201908412UA (en) 2020-04-29
CN110942976B (zh) 2023-11-17
JP2020053419A (ja) 2020-04-02
KR102226603B1 (ko) 2021-03-12
KR20200034605A (ko) 2020-03-31

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