JP2020043122A - サセプタ及び化学気相成長装置 - Google Patents
サセプタ及び化学気相成長装置 Download PDFInfo
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 34
- 230000002093 peripheral effect Effects 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 4
- 235000012431 wafers Nutrition 0.000 description 104
- 238000009826 distribution Methods 0.000 description 22
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 19
- 229910010271 silicon carbide Inorganic materials 0.000 description 18
- 239000000758 substrate Substances 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 7
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
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- H01L21/2053—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
すなわち、本発明は、上記課題を解決するため、以下の手順を提供する。
図1は、本発明の第1実施形態に係る化学気相成長装置の断面模式図である。第1実施形態にかかる化学気相成長装置100は、炉体30と、準備室40と、炉体30及び準備室40を行き来するサセプタ10と、を備える。図1では、理解を容易にするために、ウェハWを同時に図示している。
サセプタ10に円環外周部12bを設けることで、ウェハWからサセプタ10の円環状外周部12bの第1面12b1までの距離と、ウェハWからサセプタ10の円状凹部12aの第1面12a1までの距離が変わる。当該構成により、ウェハWから円環状外周部12bの第1面12b1までの距離を短くすることにより得られる、必要以上の成膜ガスがウェハW裏面に回り込むのを抑制する効果と、ウェハWからサセプタ10の円状凹部12aの第1面12a1までの距離を長くすることにより得られる、ウェハWが湾曲した場合でも、ウェハWとサセプタ10が接触することを避ける効果と、を同時に得ることができる。
図6は、第1実施形態にかかる化学気相成長装置のサセプタの変形例の断面模式図である。変形例にかかるサセプタ10Dは、基台12Aの形状が、図3に示す基台12の形状と異なる。その他の構成は同一であり、説明を省く。
図2及び図3に示すように、3個の突起部14を有するサセプタ10を準備した。突起部14の形状は、平面視形状が正方形の直方体状とした。正方形の一辺は、3mmで、高さ0.3mmとした。突起部14は、同心円状に配置した。突起部14の中心が、ウェハWの外周端から0.8mmの位置となるように設計した。3個の突起部14のうち一つの突起部14は、オリエンテーションフラットOFと対向する位置に設けた。残りの突起部は、基準となる突起部14から120°ずつ回転した位置に設けた。ウェハWは、直径150mmのSiCウェハとした。
比較例1は、突起部を円環状に設けた点が実施例1と異なる。ウェハWは、外周に沿って形成された円環状の突起部によって支持されている。その他の点は、実施例1と同様にして、エピタキシャル膜の成長速度と、エピタキシャル膜のキャリア濃度を測定した。その結果を図9及び図10に示す。図9は、比較例1におけるエピタキシャル膜の成長速度の面内分布を測定した結果である。図10は、比較例1におけるエピタキシャル膜のキャリア濃度の面内分布を測定した結果である。
12…基台
12a…円状凹部
12b…円環状外周部
14、14A、14B、14C…突起部
16…保持リング
20…支持体
21…支柱
30…炉体
31…シャッター
40…準備室
41…アーム
100…化学気相成長装置
OF…オリエンテーションフラット
R…成膜空間
S…空間
W…ウェハ
Claims (8)
- ウェハの主面上に、化学気相成長法によってエピタキシャル膜を成長させる化学気相成長装置に用いられるサセプタであって、
基台と、
前記基台の外周部に配置され、前記ウェハの外周部を支持する3個の突起部と、を有する、サセプタ。 - 前記基台は、円状凹部と、前記円状凹部の外周から立接する円環状外周部とを有し、
前記3個の突起部は、前記円環状外周部上に配置される、請求項1に記載のサセプタ。 - 前記3個の突起部の第1端から前記円状凹部の前記ウェハが載置される側の面に下した垂線の高さが1mm以上5mm以下である、請求項2に記載のサセプタ。
- 前記3個の突起部が同心円状に配列する、請求項1〜3のいずれか一項に記載のサセプタ。
- 前記3個の突起部が等間隔に配列されている、請求項4に記載のサセプタ。
- 前記3個の突起部は、前記ウェハを載置した際に、前記ウェハのオリフラ部以外の場所に配置されている、請求項1〜5のいずれか一項に記載のサセプタ。
- 前記3個の突起部のそれぞれの高さが0.1mm以上5mm以下である、請求項1〜6のいずれか一項に記載のサセプタ。
- 請求項1から請求項7のいずれか一項に記載のサセプタを備える、化学気相成長装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018167035A JP7322365B2 (ja) | 2018-09-06 | 2018-09-06 | サセプタ及び化学気相成長装置 |
DE102019123525.1A DE102019123525A1 (de) | 2018-09-06 | 2019-09-03 | Suszeptor und chemische gasphasenabscheidungsvorrichtung |
CN201910826274.9A CN110878429A (zh) | 2018-09-06 | 2019-09-03 | 基座和化学气相生长装置 |
US16/559,844 US20200083085A1 (en) | 2018-09-06 | 2019-09-04 | Susceptor and chemical vapor deposition apparatus |
US17/211,634 US20210217648A1 (en) | 2018-09-06 | 2021-03-24 | Susceptor and chemical vapor deposition apparatus |
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JP2018167035A JP7322365B2 (ja) | 2018-09-06 | 2018-09-06 | サセプタ及び化学気相成長装置 |
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JP2020043122A true JP2020043122A (ja) | 2020-03-19 |
JP7322365B2 JP7322365B2 (ja) | 2023-08-08 |
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JP2018167035A Active JP7322365B2 (ja) | 2018-09-06 | 2018-09-06 | サセプタ及び化学気相成長装置 |
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US (2) | US20200083085A1 (ja) |
JP (1) | JP7322365B2 (ja) |
CN (1) | CN110878429A (ja) |
DE (1) | DE102019123525A1 (ja) |
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JPH0758041A (ja) * | 1993-08-20 | 1995-03-03 | Toshiba Ceramics Co Ltd | サセプタ |
JPH1070171A (ja) * | 1996-06-21 | 1998-03-10 | Kokusai Electric Co Ltd | 基板処理装置および基板処理方法 |
JP2011054639A (ja) * | 2009-08-31 | 2011-03-17 | Showa Denko Kk | 化合物半導体の製造装置、化合物半導体の製造方法及び化合物半導体 |
US20130092595A1 (en) * | 2011-10-14 | 2013-04-18 | Epistar Corporation | Wafer carrier |
JP2017076652A (ja) * | 2015-10-13 | 2017-04-20 | 大陽日酸株式会社 | 基板載置台及び気相成長装置 |
JP2017117850A (ja) * | 2015-12-21 | 2017-06-29 | 昭和電工株式会社 | ウェハ支持機構、化学気相成長装置およびエピタキシャルウェハの製造方法 |
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DE19860163B4 (de) * | 1998-02-18 | 2005-12-29 | Sez Ag | Verfahren zum Trockenätzen eines Wafers |
US6197438B1 (en) * | 1998-03-11 | 2001-03-06 | Roger Faulkner | Foodware with ceramic food contacting surface |
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JPWO2005111266A1 (ja) * | 2004-05-18 | 2008-03-27 | 株式会社Sumco | 気相成長装置用サセプタ |
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JP2007251078A (ja) * | 2006-03-20 | 2007-09-27 | Nuflare Technology Inc | 気相成長装置 |
JP5143436B2 (ja) * | 2007-01-29 | 2013-02-13 | 大日本スクリーン製造株式会社 | 熱処理装置 |
JP5169097B2 (ja) * | 2007-09-14 | 2013-03-27 | 住友電気工業株式会社 | 半導体装置の製造装置および製造方法 |
JP2009088088A (ja) * | 2007-09-28 | 2009-04-23 | Sharp Corp | 基板処理装置および基板処理方法 |
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TWI615917B (zh) * | 2015-04-27 | 2018-02-21 | Sumco股份有限公司 | 承托器及磊晶生長裝置 |
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2018
- 2018-09-06 JP JP2018167035A patent/JP7322365B2/ja active Active
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2019
- 2019-09-03 CN CN201910826274.9A patent/CN110878429A/zh active Pending
- 2019-09-03 DE DE102019123525.1A patent/DE102019123525A1/de active Pending
- 2019-09-04 US US16/559,844 patent/US20200083085A1/en not_active Abandoned
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2021
- 2021-03-24 US US17/211,634 patent/US20210217648A1/en active Pending
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JPH0758041A (ja) * | 1993-08-20 | 1995-03-03 | Toshiba Ceramics Co Ltd | サセプタ |
JPH1070171A (ja) * | 1996-06-21 | 1998-03-10 | Kokusai Electric Co Ltd | 基板処理装置および基板処理方法 |
JP2011054639A (ja) * | 2009-08-31 | 2011-03-17 | Showa Denko Kk | 化合物半導体の製造装置、化合物半導体の製造方法及び化合物半導体 |
US20130092595A1 (en) * | 2011-10-14 | 2013-04-18 | Epistar Corporation | Wafer carrier |
JP2017076652A (ja) * | 2015-10-13 | 2017-04-20 | 大陽日酸株式会社 | 基板載置台及び気相成長装置 |
JP2017117850A (ja) * | 2015-12-21 | 2017-06-29 | 昭和電工株式会社 | ウェハ支持機構、化学気相成長装置およびエピタキシャルウェハの製造方法 |
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US20200083085A1 (en) | 2020-03-12 |
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CN110878429A (zh) | 2020-03-13 |
US20210217648A1 (en) | 2021-07-15 |
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