JP2020035964A5 - - Google Patents
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- Publication number
- JP2020035964A5 JP2020035964A5 JP2018163390A JP2018163390A JP2020035964A5 JP 2020035964 A5 JP2020035964 A5 JP 2020035964A5 JP 2018163390 A JP2018163390 A JP 2018163390A JP 2018163390 A JP2018163390 A JP 2018163390A JP 2020035964 A5 JP2020035964 A5 JP 2020035964A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- substrate
- active layer
- emitting laser
- surface emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 17
- 239000000758 substrate Substances 0.000 claims 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 6
- 229910052799 carbon Inorganic materials 0.000 claims 6
- 239000002994 raw material Substances 0.000 claims 6
- 150000001875 compounds Chemical class 0.000 claims 5
- 239000000470 constituent Substances 0.000 claims 4
- 229910052738 indium Inorganic materials 0.000 claims 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- 239000002019 doping agent Substances 0.000 claims 3
- 229910052733 gallium Inorganic materials 0.000 claims 2
- 125000006850 spacer group Chemical group 0.000 claims 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 230000004888 barrier function Effects 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018163390A JP7095498B2 (ja) | 2018-08-31 | 2018-08-31 | 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法 |
| US16/555,599 US10938181B2 (en) | 2018-08-31 | 2019-08-29 | Vertical cavity surface emitting laser and method for manufacturing vertical cavity surface emitting laser |
| CN201910807121.XA CN110875573B (zh) | 2018-08-31 | 2019-08-29 | 垂直腔面发射激光器及制造垂直腔面发射激光器的方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018163390A JP7095498B2 (ja) | 2018-08-31 | 2018-08-31 | 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020035964A JP2020035964A (ja) | 2020-03-05 |
| JP2020035964A5 true JP2020035964A5 (cg-RX-API-DMAC7.html) | 2021-09-09 |
| JP7095498B2 JP7095498B2 (ja) | 2022-07-05 |
Family
ID=69639665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018163390A Active JP7095498B2 (ja) | 2018-08-31 | 2018-08-31 | 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10938181B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP7095498B2 (cg-RX-API-DMAC7.html) |
| CN (1) | CN110875573B (cg-RX-API-DMAC7.html) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12308618B2 (en) * | 2021-04-26 | 2025-05-20 | Lumentum Operations Llc | Matrix addressable vertical cavity surface emitting laser array |
| US12470046B2 (en) | 2021-07-27 | 2025-11-11 | Sumitomo Electric Industries, Ltd. | Vertical cavity surface-emitting laser |
| JP7786222B2 (ja) * | 2021-07-27 | 2025-12-16 | 住友電気工業株式会社 | 垂直共振型面発光レーザ |
| US20240022046A1 (en) * | 2022-07-15 | 2024-01-18 | Mellanox Technologies, Ltd. | Vertical-cavity surface-emitting laser (vcsel) having separate electrical and optical confinement |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5493577A (en) * | 1994-12-21 | 1996-02-20 | Sandia Corporation | Efficient semiconductor light-emitting device and method |
| US5923696A (en) * | 1996-12-27 | 1999-07-13 | Motorola, Inc. | Visible light emitting vertical cavity surface emitting laser with gallium phosphide contact layer and method of fabrication |
| US6437372B1 (en) | 2000-01-07 | 2002-08-20 | Agere Systems Guardian Corp. | Diffusion barrier spikes for III-V structures |
| US6764926B2 (en) | 2002-03-25 | 2004-07-20 | Agilent Technologies, Inc. | Method for obtaining high quality InGaAsN semiconductor devices |
| US7542499B2 (en) * | 2003-11-27 | 2009-06-02 | Ricoh Company, Ltd. | Surface-emission laser diode and surface-emission laser array, optical interconnection system, optical communication system, electrophotographic system, and optical disk system |
| US7372886B2 (en) | 2004-06-07 | 2008-05-13 | Avago Technologies Fiber Ip Pte Ltd | High thermal conductivity vertical cavity surface emitting laser (VCSEL) |
| JP4636309B2 (ja) | 2004-10-20 | 2011-02-23 | ソニー株式会社 | 半導体レーザ素子の製造方法 |
| JP2008108964A (ja) | 2006-10-26 | 2008-05-08 | Stanley Electric Co Ltd | 半導体発光装置およびその製造方法 |
| US7881358B2 (en) * | 2006-12-27 | 2011-02-01 | Nec Corporation | Surface emitting laser |
| JP4539752B2 (ja) * | 2008-04-09 | 2010-09-08 | 住友電気工業株式会社 | 量子井戸構造の形成方法および半導体発光素子の製造方法 |
| JP5169564B2 (ja) * | 2008-07-15 | 2013-03-27 | 住友電気工業株式会社 | 面発光半導体レーザ |
| JP2011119374A (ja) | 2009-12-02 | 2011-06-16 | Sharp Corp | 窒化物半導体素子及びその製造方法、並びに、半導体装置 |
| JP6136284B2 (ja) * | 2012-03-13 | 2017-05-31 | 株式会社リコー | 半導体積層体及び面発光レーザ素子 |
| JP5721246B1 (ja) * | 2014-08-08 | 2015-05-20 | 国立大学法人東京工業大学 | 光変調機能付き面発光レーザ |
| JP5812175B1 (ja) * | 2014-10-03 | 2015-11-11 | 富士ゼロックス株式会社 | 面発光型半導体レーザ素子および面発光型半導体レーザ素子の製造方法 |
| CN105337166B (zh) * | 2015-11-30 | 2019-01-11 | 武汉电信器件有限公司 | 一种高速垂直腔面发射激光器的分子束外延生长方法 |
-
2018
- 2018-08-31 JP JP2018163390A patent/JP7095498B2/ja active Active
-
2019
- 2019-08-29 CN CN201910807121.XA patent/CN110875573B/zh active Active
- 2019-08-29 US US16/555,599 patent/US10938181B2/en active Active
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