JP7095498B2 - 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法 - Google Patents

垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法 Download PDF

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JP7095498B2
JP7095498B2 JP2018163390A JP2018163390A JP7095498B2 JP 7095498 B2 JP7095498 B2 JP 7095498B2 JP 2018163390 A JP2018163390 A JP 2018163390A JP 2018163390 A JP2018163390 A JP 2018163390A JP 7095498 B2 JP7095498 B2 JP 7095498B2
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semiconductor
layer
growth
substrate
emitting laser
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JP2020035964A (ja
JP2020035964A5 (cg-RX-API-DMAC7.html
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慧 藤井
隆道 住友
卓 有方
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Sumitomo Electric Industries Ltd
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    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
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    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
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    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
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    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
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    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2018163390A 2018-08-31 2018-08-31 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法 Active JP7095498B2 (ja)

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JP2018163390A JP7095498B2 (ja) 2018-08-31 2018-08-31 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法
US16/555,599 US10938181B2 (en) 2018-08-31 2019-08-29 Vertical cavity surface emitting laser and method for manufacturing vertical cavity surface emitting laser
CN201910807121.XA CN110875573B (zh) 2018-08-31 2019-08-29 垂直腔面发射激光器及制造垂直腔面发射激光器的方法

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US12308618B2 (en) * 2021-04-26 2025-05-20 Lumentum Operations Llc Matrix addressable vertical cavity surface emitting laser array
US12470046B2 (en) 2021-07-27 2025-11-11 Sumitomo Electric Industries, Ltd. Vertical cavity surface-emitting laser
JP7786222B2 (ja) * 2021-07-27 2025-12-16 住友電気工業株式会社 垂直共振型面発光レーザ
US20240022046A1 (en) * 2022-07-15 2024-01-18 Mellanox Technologies, Ltd. Vertical-cavity surface-emitting laser (vcsel) having separate electrical and optical confinement

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