CN110875573B - 垂直腔面发射激光器及制造垂直腔面发射激光器的方法 - Google Patents

垂直腔面发射激光器及制造垂直腔面发射激光器的方法 Download PDF

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CN110875573B
CN110875573B CN201910807121.XA CN201910807121A CN110875573B CN 110875573 B CN110875573 B CN 110875573B CN 201910807121 A CN201910807121 A CN 201910807121A CN 110875573 B CN110875573 B CN 110875573B
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semiconductor
growth
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active layer
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CN110875573A (zh
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藤井慧
住友隆道
有方卓
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Sumitomo Electric Industries Ltd
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    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
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    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
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    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
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    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201910807121.XA 2018-08-31 2019-08-29 垂直腔面发射激光器及制造垂直腔面发射激光器的方法 Active CN110875573B (zh)

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JP2018163390A JP7095498B2 (ja) 2018-08-31 2018-08-31 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法
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US12308618B2 (en) * 2021-04-26 2025-05-20 Lumentum Operations Llc Matrix addressable vertical cavity surface emitting laser array
US12470046B2 (en) 2021-07-27 2025-11-11 Sumitomo Electric Industries, Ltd. Vertical cavity surface-emitting laser
JP7786222B2 (ja) * 2021-07-27 2025-12-16 住友電気工業株式会社 垂直共振型面発光レーザ
US20240022046A1 (en) * 2022-07-15 2024-01-18 Mellanox Technologies, Ltd. Vertical-cavity surface-emitting laser (vcsel) having separate electrical and optical confinement

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5493577A (en) * 1994-12-21 1996-02-20 Sandia Corporation Efficient semiconductor light-emitting device and method
JP2006120760A (ja) * 2004-10-20 2006-05-11 Sony Corp 半導体レーザ素子の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5923696A (en) * 1996-12-27 1999-07-13 Motorola, Inc. Visible light emitting vertical cavity surface emitting laser with gallium phosphide contact layer and method of fabrication
US6437372B1 (en) 2000-01-07 2002-08-20 Agere Systems Guardian Corp. Diffusion barrier spikes for III-V structures
US6764926B2 (en) 2002-03-25 2004-07-20 Agilent Technologies, Inc. Method for obtaining high quality InGaAsN semiconductor devices
US7542499B2 (en) * 2003-11-27 2009-06-02 Ricoh Company, Ltd. Surface-emission laser diode and surface-emission laser array, optical interconnection system, optical communication system, electrophotographic system, and optical disk system
US7372886B2 (en) 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
JP2008108964A (ja) 2006-10-26 2008-05-08 Stanley Electric Co Ltd 半導体発光装置およびその製造方法
US7881358B2 (en) * 2006-12-27 2011-02-01 Nec Corporation Surface emitting laser
JP4539752B2 (ja) * 2008-04-09 2010-09-08 住友電気工業株式会社 量子井戸構造の形成方法および半導体発光素子の製造方法
JP5169564B2 (ja) * 2008-07-15 2013-03-27 住友電気工業株式会社 面発光半導体レーザ
JP2011119374A (ja) 2009-12-02 2011-06-16 Sharp Corp 窒化物半導体素子及びその製造方法、並びに、半導体装置
JP6136284B2 (ja) * 2012-03-13 2017-05-31 株式会社リコー 半導体積層体及び面発光レーザ素子
JP5721246B1 (ja) * 2014-08-08 2015-05-20 国立大学法人東京工業大学 光変調機能付き面発光レーザ
JP5812175B1 (ja) * 2014-10-03 2015-11-11 富士ゼロックス株式会社 面発光型半導体レーザ素子および面発光型半導体レーザ素子の製造方法
CN105337166B (zh) * 2015-11-30 2019-01-11 武汉电信器件有限公司 一种高速垂直腔面发射激光器的分子束外延生长方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5493577A (en) * 1994-12-21 1996-02-20 Sandia Corporation Efficient semiconductor light-emitting device and method
JP2006120760A (ja) * 2004-10-20 2006-05-11 Sony Corp 半導体レーザ素子の製造方法

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US20200076161A1 (en) 2020-03-05

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