JP2020029399A - 高周波デバイス用ガラス基板と高周波デバイス用回路基板 - Google Patents
高周波デバイス用ガラス基板と高周波デバイス用回路基板 Download PDFInfo
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B25/00—Annealing glass products
- C03B25/04—Annealing glass products in a continuous way
- C03B25/06—Annealing glass products in a continuous way with horizontal displacement of the glass products
- C03B25/08—Annealing glass products in a continuous way with horizontal displacement of the glass products of glass sheets
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
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- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/11—Glass compositions containing silica with 40% to 90% silica, by weight containing halogen or nitrogen
- C03C3/112—Glass compositions containing silica with 40% to 90% silica, by weight containing halogen or nitrogen containing fluorine
- C03C3/115—Glass compositions containing silica with 40% to 90% silica, by weight containing halogen or nitrogen containing fluorine containing boron
- C03C3/118—Glass compositions containing silica with 40% to 90% silica, by weight containing halogen or nitrogen containing fluorine containing boron containing aluminium
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- C03—GLASS; MINERAL OR SLAG WOOL
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- C03C4/00—Compositions for glass with special properties
- C03C4/16—Compositions for glass with special properties for dielectric glass
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
- H05K1/024—Dielectric details, e.g. changing the dielectric material around a transmission line
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B17/00—Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
- C03B17/02—Forming molten glass coated with coloured layers; Forming molten glass of different compositions or layers; Forming molten glass comprising reinforcements or inserts
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B17/00—Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
- C03B17/06—Forming glass sheets
- C03B17/064—Forming glass sheets by the overflow downdraw fusion process; Isopipes therefor
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- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
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- C03C13/00—Fibre or filament compositions
- C03C13/04—Fibre optics, e.g. core and clad fibre compositions
- C03C13/045—Silica-containing oxide glass compositions
- C03C13/046—Multicomponent glass compositions
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- C03C2204/08—Glass having a rough surface
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- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/25—Metals
- C03C2217/251—Al, Cu, Mg or noble metals
- C03C2217/253—Cu
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
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Abstract
Description
(比誘電率、誘電正接)
JIS R1641(2007年)に規定されている方法に従い、空洞共振器およびベクトルネットワークアナライザを用いて測定した。測定周波数は空洞共振器の空気の共振周波数である35GHzである。
(平均熱膨張係数)
JIS R3102(1995年)に規定されている方法に従い、示差熱膨張計を用いて測定した。測定温度範囲は50〜350℃で、単位をppm/℃として表した。
(ヤング率)
JIS Z 2280に規定されている方法に従い、厚さ0.5〜10mmのガラスについて、超音波パルス法により測定した。単位をGPaとして表した。
(透過率)
可視紫外分光光度計を用いて、所定の厚みの鏡面研磨されたガラスの透過率を測定した。透過率は、反射による損失を含んだ外部透過率として表した。
(気孔率)
ガラス基板中に含まれる気泡を光学顕微鏡により観察し、気泡の個数ならびに直径を求めて、単位体積当たりに含まれる気泡の体積を計算することにより求めた。
(β−OH)
上記実施形態に記載の方法で求めた。
(Ra)
JIS B0601(2001年)に規定されている方法に従い、AFMにより10μm□領域でのガラス表面の平均粗さを測定した。
(密度)
泡を含まない約20gのガラス塊の密度をアルキメデス法によって測定した。
(失透温度)
白金製皿に粉砕されたガラス粒子を入れ、一定温度に制御された電気炉中で17時間熱処理を行い、熱処理後の試料の光学顕微鏡観察によって、ガラスの内部に結晶が析出する最高温度と結晶が析出しない最低温度との平均値とした。
例1〜6のガラス基板材料の誘電特性による高周波信号の伝送損失の影響を確認するため、単純化したモデルでの伝送線路の伝送損失の計算を行った。解析手法としては、市販のモーメント法シミュレータSonnet Lite(R)(ソネットソフトウェアインク製)を用いた。伝送線路は、マイクロストリップ線路(MSL)とした。解析モデルは、以下の通りである。ガラス基板の一方の主表面に形成された銅配線層を、線路の特性インピーダンスが50Ωになる幅(表9〜12に示す)に規定し、1GHz〜110GHzでのSパラメータ(散乱パラメータS21)を計算した。銅層の表面粗度は、表皮効果が問題とならないほど十分に平滑であると設定した。計算したS21(透過特性)を図2に示す。また、35GHzおよび110GHzで信号伝送損失の値は表9〜12に示した。
Claims (17)
- 酸化物基準のモル百分率で、アルカリ金属酸化物を合計含有量として0.001〜5%の範囲で含有すると共に、前記アルカリ金属酸化物のうちNa2O/(Na2O+K2O)で表されるモル比が0.01〜0.99の範囲であり、かつB2O3を18.5%以上含有し、Al2O3およびB2O3を合計含有量として1〜40%の範囲で含有すると共に、Al2O3/(Al2O3+B2O3)で表されるモル比が0〜0.45の範囲である、SiO2を主成分とするガラス基板であって、
前記ガラス基板の少なくとも1つの主表面の表面粗さが算術平均粗さRaの値として1.5nm以下であり、かつ35GHzにおける誘電正接が0.007以下である、10GHz以上の高周波信号を扱う高周波デバイスに用いられるガラス基板。 - 酸化物基準のモル百分率で、アルカリ金属酸化物を合計含有量として0.001〜5%の範囲で含有すると共に、前記アルカリ金属酸化物のうちNa2O/(Na2O+K2O)で表されるモル比が0.01〜0.99の範囲であり、かつAl2O3およびB2O3を合計含有量として1〜40%の範囲で含有すると共に、Al2O3/(Al2O3+B2O3)で表されるモル比が0.05〜0.28の範囲である、SiO2を主成分とするガラス基板であって、
前記ガラス基板の少なくとも1つの主表面の表面粗さが算術平均粗さRaの値として1.5nm以下であり、かつ35GHzにおける誘電正接が0.007以下である、10GHz以上の高周波信号を扱う高周波デバイスに用いられるガラス基板。 - 酸化物基準のモル百分率で、アルカリ金属酸化物を合計含有量として0.001〜5%の範囲で含有すると共に、前記アルカリ金属酸化物のうちNa2O/(Na2O+K2O)で表されるモル比が0.01〜0.99の範囲であり、かつAl2O3およびB2O3を合計含有量として27〜40%の範囲で含有すると共に、Al2O3/(Al2O3+B2O3)で表されるモル比が0〜0.45の範囲である、SiO2を主成分とするガラス基板であって、
前記ガラス基板の少なくとも1つの主表面の表面粗さが算術平均粗さRaの値として1.5nm以下であり、かつ35GHzにおける誘電正接が0.007以下である、10GHz以上の高周波信号を扱う高周波デバイスに用いられるガラス基板。 - 酸化物基準のモル百分率で、アルカリ金属酸化物を合計含有量として0.001〜5%の範囲で含有すると共に、前記アルカリ金属酸化物のうちNa2O/(Na2O+K2O)で表されるモル比が0.01〜0.99の範囲であり、B2O3を18.5%以上含有し、かつアルカリ土類金属酸化物を合計含有量として0.1〜13%の範囲で含有する、SiO2を主成分とするガラス基板であって、
前記ガラス基板の少なくとも1つの主表面の表面粗さが算術平均粗さRaの値として1.5nm以下であり、かつ35GHzにおける誘電正接が0.007以下である、10GHz以上の高周波信号を扱う高周波デバイスに用いられるガラス基板。 - 酸化物基準のモル百分率で、アルカリ金属酸化物を合計含有量として0.001〜5%の範囲で含有すると共に、前記アルカリ金属酸化物のうちNa2O/(Na2O+K2O)で表されるモル比が0.01〜0.99の範囲であり、かつMgOの含有量が11%以下であり、CaOの含有量が5%以下であると共に、アルカリ土類金属酸化物を合計含有量として3〜13%の範囲で含有する、SiO2を主成分とするガラス基板であって、
前記ガラス基板の少なくとも1つの主表面の表面粗さが算術平均粗さRaの値として1.5nm以下であり、かつ35GHzにおける誘電正接が0.007以下である、10GHz以上の高周波信号を扱う高周波デバイスに用いられるガラス基板。 - 酸化物基準のモル百分率で、Al2O3およびB2O3を合計含有量として1〜40%の範囲で含有すると共に、Al2O3/(Al2O3+B2O3)で表されるモル比が0〜0.45の範囲である、請求項4又は5に記載のガラス基板。
- 酸化物基準のモル百分率で、B2O3の含有量が18.5〜30%の範囲であると共に、Al2O3の含有量が0〜10%の範囲である、請求項1〜6のいずれか一項に記載のガラス基板。
- 酸化物基準のモル百分率で、Fe2O3換算でのFeの含有量が0.012%以下である、請求項1〜7のいずれか一項に記載のガラス基板。
- β−OH値が0.05〜0.6mm−1の範囲である、請求項1〜8のいずれか一項に記載のガラス基板。
- 35GHzにおける比誘電率が10以下である、請求項1〜9のいずれか一項に記載のガラス基板。
- 50〜350℃における平均熱膨張係数が3〜15ppm/℃の範囲である、請求項1〜10のいずれか一項に記載のガラス基板。
- ヤング率が40GPa以上である、請求項1〜11のいずれか一項に記載のガラス基板。
- 気孔率が0.1%以下である、請求項1〜12のいずれか一項に記載のガラス基板。
- 波長350nmの透過率が50%以上である、請求項1〜13のいずれか一項に記載のガラス基板。
- 厚さが0.05〜1mmの範囲であると共に、基板面積が225〜10000cm2の範囲である、請求項1〜14のいずれか一項に記載のガラス基板。
- 非晶質である、請求項1〜15のいずれか一項に記載のガラス基板。
- 請求項1〜16のいずれか一項に記載のガラス基板と、
前記ガラス基板の前記主表面上に形成された配線層とを具備し、
35GHzにおける伝送損失が1dB/cm以下である、10GHz以上の高周波信号を扱う高周波デバイスに用いられる回路基板。
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JP6860056B2 (ja) | 2021-04-14 |
TW201819324A (zh) | 2018-06-01 |
JP7415237B2 (ja) | 2024-01-17 |
US20210163341A1 (en) | 2021-06-03 |
CN112759255A (zh) | 2021-05-07 |
JP2021066656A (ja) | 2021-04-30 |
US20200123043A1 (en) | 2020-04-23 |
JP2022159373A (ja) | 2022-10-17 |
JP2024023971A (ja) | 2024-02-21 |
US11708294B2 (en) | 2023-07-25 |
JP7120341B2 (ja) | 2022-08-17 |
TW202114954A (zh) | 2021-04-16 |
CN116282901A (zh) | 2023-06-23 |
US20190210911A1 (en) | 2019-07-11 |
US10974987B2 (en) | 2021-04-13 |
TW202400533A (zh) | 2024-01-01 |
WO2018051793A1 (ja) | 2018-03-22 |
JP6714884B2 (ja) | 2020-07-01 |
JPWO2018051793A1 (ja) | 2019-06-24 |
CN109715576A (zh) | 2019-05-03 |
CN116282904A (zh) | 2023-06-23 |
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