JP2019537745A5 - - Google Patents

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Publication number
JP2019537745A5
JP2019537745A5 JP2019521060A JP2019521060A JP2019537745A5 JP 2019537745 A5 JP2019537745 A5 JP 2019537745A5 JP 2019521060 A JP2019521060 A JP 2019521060A JP 2019521060 A JP2019521060 A JP 2019521060A JP 2019537745 A5 JP2019537745 A5 JP 2019537745A5
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JP
Japan
Prior art keywords
array pattern
defect
metrology
pattern
tool
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JP2019521060A
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English (en)
Japanese (ja)
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JP6906050B2 (ja
JP2019537745A (ja
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Priority claimed from US15/730,551 external-priority patent/US10768533B2/en
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Publication of JP2019537745A5 publication Critical patent/JP2019537745A5/ja
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JP2019521060A 2016-10-20 2017-10-19 メトロロジー測定に用いるためのプログラムされた欠陥を生成する方法およびシステム Active JP6906050B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662410397P 2016-10-20 2016-10-20
US62/410,397 2016-10-20
US15/730,551 US10768533B2 (en) 2016-10-20 2017-10-11 Method and system for generating programmed defects for use in metrology measurements
US15/730,551 2017-10-11
PCT/US2017/057453 WO2018075804A1 (en) 2016-10-20 2017-10-19 Method and system for generating programmed defects for use in metrology measurements

Publications (3)

Publication Number Publication Date
JP2019537745A JP2019537745A (ja) 2019-12-26
JP2019537745A5 true JP2019537745A5 (enExample) 2020-11-26
JP6906050B2 JP6906050B2 (ja) 2021-07-21

Family

ID=61969578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019521060A Active JP6906050B2 (ja) 2016-10-20 2017-10-19 メトロロジー測定に用いるためのプログラムされた欠陥を生成する方法およびシステム

Country Status (6)

Country Link
US (1) US10768533B2 (enExample)
JP (1) JP6906050B2 (enExample)
KR (1) KR102276923B1 (enExample)
CN (1) CN109964177B (enExample)
TW (1) TWI747973B (enExample)
WO (1) WO2018075804A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3290911A1 (en) * 2016-09-02 2018-03-07 ASML Netherlands B.V. Method and system to monitor a process apparatus
US10120973B2 (en) 2017-03-15 2018-11-06 Applied Materials Israel Ltd. Method of performing metrology operations and system thereof
US10296702B2 (en) * 2017-03-15 2019-05-21 Applied Materials Israel Ltd. Method of performing metrology operations and system thereof
KR102735498B1 (ko) 2018-12-31 2024-11-29 에이에스엠엘 네델란즈 비.브이. 프로세스 제어를 위한 인-다이 계측 방법 및 시스템
CN113508338B (zh) 2019-02-20 2024-08-27 Asml荷兰有限公司 用于表征半导体器件的制造工艺的方法
US11073768B2 (en) * 2019-06-26 2021-07-27 Kla Corporation Metrology target for scanning metrology
US11914290B2 (en) * 2019-07-24 2024-02-27 Kla Corporation Overlay measurement targets design
US11231376B2 (en) * 2019-08-29 2022-01-25 Taiwan Semiconductor Manufacturing Company Ltd. Method for semiconductor wafer inspection and system thereof
EP3923078A1 (en) * 2020-06-10 2021-12-15 ASML Netherlands B.V. Heigth measurement method and height measurement system
CN117581161A (zh) * 2021-07-13 2024-02-20 Asml控股股份有限公司 具有用于污染物检测和显微镜检查的相控阵列的量测系统
EP4152096A1 (en) * 2021-09-15 2023-03-22 ASML Netherlands B.V. System and method for inspection by failure mechanism classification and identification in a charged particle system
CN117153820A (zh) * 2022-05-30 2023-12-01 三星电子株式会社 重叠测量方法及使用该方法制造的半导体器件
KR102970602B1 (ko) * 2024-03-27 2026-06-01 (주) 오로스테크놀로지 오버레이 계측장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003315284A (ja) * 2002-04-24 2003-11-06 Mitsubishi Electric Corp パターン検査装置の感度調整方法
US7557910B2 (en) 2004-12-19 2009-07-07 Kla-Tencor Corporation System and method for controlling a beam source in a workpiece surface inspection system
KR20060084922A (ko) * 2005-01-21 2006-07-26 삼성전자주식회사 오버레이 측정 장치의 보정 방법
US7916927B2 (en) 2007-01-16 2011-03-29 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
WO2010020331A1 (en) 2008-08-19 2010-02-25 Asml Netherlands B.V. A method of measuring overlay error and a device manufacturing method
CN101650534B (zh) * 2009-07-24 2012-12-12 上海宏力半导体制造有限公司 测量曝光机台焦平面均匀度的方法
CN102483582B (zh) * 2009-08-24 2016-01-20 Asml荷兰有限公司 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底
KR101492205B1 (ko) * 2010-11-12 2015-02-10 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템, 및 디바이스 제조 방법
US9709903B2 (en) * 2011-11-01 2017-07-18 Kla-Tencor Corporation Overlay target geometry for measuring multiple pitches
NL2010717A (en) * 2012-05-21 2013-11-25 Asml Netherlands Bv Determining a structural parameter and correcting an asymmetry property.
US9214317B2 (en) * 2013-06-04 2015-12-15 Kla-Tencor Corporation System and method of SEM overlay metrology
US9347862B2 (en) * 2013-08-06 2016-05-24 Kla-Tencor Corp. Setting up a wafer inspection process using programmed defects
US10267746B2 (en) * 2014-10-22 2019-04-23 Kla-Tencor Corp. Automated pattern fidelity measurement plan generation

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