JP2019537745A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2019537745A5 JP2019537745A5 JP2019521060A JP2019521060A JP2019537745A5 JP 2019537745 A5 JP2019537745 A5 JP 2019537745A5 JP 2019521060 A JP2019521060 A JP 2019521060A JP 2019521060 A JP2019521060 A JP 2019521060A JP 2019537745 A5 JP2019537745 A5 JP 2019537745A5
- Authority
- JP
- Japan
- Prior art keywords
- array pattern
- defect
- metrology
- pattern
- tool
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662410397P | 2016-10-20 | 2016-10-20 | |
| US62/410,397 | 2016-10-20 | ||
| US15/730,551 | 2017-10-11 | ||
| US15/730,551 US10768533B2 (en) | 2016-10-20 | 2017-10-11 | Method and system for generating programmed defects for use in metrology measurements |
| PCT/US2017/057453 WO2018075804A1 (en) | 2016-10-20 | 2017-10-19 | Method and system for generating programmed defects for use in metrology measurements |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019537745A JP2019537745A (ja) | 2019-12-26 |
| JP2019537745A5 true JP2019537745A5 (enExample) | 2020-11-26 |
| JP6906050B2 JP6906050B2 (ja) | 2021-07-21 |
Family
ID=61969578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019521060A Active JP6906050B2 (ja) | 2016-10-20 | 2017-10-19 | メトロロジー測定に用いるためのプログラムされた欠陥を生成する方法およびシステム |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10768533B2 (enExample) |
| JP (1) | JP6906050B2 (enExample) |
| KR (1) | KR102276923B1 (enExample) |
| CN (1) | CN109964177B (enExample) |
| TW (1) | TWI747973B (enExample) |
| WO (1) | WO2018075804A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3290911A1 (en) * | 2016-09-02 | 2018-03-07 | ASML Netherlands B.V. | Method and system to monitor a process apparatus |
| US10120973B2 (en) | 2017-03-15 | 2018-11-06 | Applied Materials Israel Ltd. | Method of performing metrology operations and system thereof |
| US10296702B2 (en) * | 2017-03-15 | 2019-05-21 | Applied Materials Israel Ltd. | Method of performing metrology operations and system thereof |
| CN113272736B (zh) * | 2018-12-31 | 2025-02-18 | Asml荷兰有限公司 | 用于过程控制的管芯内量测方法和系统 |
| US11860548B2 (en) * | 2019-02-20 | 2024-01-02 | Asml Netherlands B.V. | Method for characterizing a manufacturing process of semiconductor devices |
| US11914290B2 (en) * | 2019-07-24 | 2024-02-27 | Kla Corporation | Overlay measurement targets design |
| US11231376B2 (en) * | 2019-08-29 | 2022-01-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for semiconductor wafer inspection and system thereof |
| EP3923078A1 (en) * | 2020-06-10 | 2021-12-15 | ASML Netherlands B.V. | Heigth measurement method and height measurement system |
| US20240319617A1 (en) * | 2021-07-13 | 2024-09-26 | Asml Holding N.V. | Metrology systems with phased arrays for contaminant detection and microscopy |
| EP4152096A1 (en) * | 2021-09-15 | 2023-03-22 | ASML Netherlands B.V. | System and method for inspection by failure mechanism classification and identification in a charged particle system |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003315284A (ja) | 2002-04-24 | 2003-11-06 | Mitsubishi Electric Corp | パターン検査装置の感度調整方法 |
| US7417722B2 (en) | 2004-12-19 | 2008-08-26 | Kla-Tencor Technologies Corporation | System and method for controlling light scattered from a workpiece surface in a surface inspection system |
| KR20060084922A (ko) * | 2005-01-21 | 2006-07-26 | 삼성전자주식회사 | 오버레이 측정 장치의 보정 방법 |
| US7916927B2 (en) | 2007-01-16 | 2011-03-29 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
| NL2003294A (en) | 2008-08-19 | 2010-03-09 | Asml Netherlands Bv | A method of measuring overlay error and a device manufacturing method. |
| CN101650534B (zh) * | 2009-07-24 | 2012-12-12 | 上海宏力半导体制造有限公司 | 测量曝光机台焦平面均匀度的方法 |
| SG178368A1 (en) * | 2009-08-24 | 2012-04-27 | Asml Netherlands Bv | Metrology method and apparatus, lithographic apparatus, lithographic processing cell and substrate comprising metrology targets |
| JP5661194B2 (ja) * | 2010-11-12 | 2015-01-28 | エーエスエムエル ネザーランズ ビー.ブイ. | メトロロジ方法及び装置、リソグラフィシステム並びにデバイス製造方法 |
| US9709903B2 (en) * | 2011-11-01 | 2017-07-18 | Kla-Tencor Corporation | Overlay target geometry for measuring multiple pitches |
| NL2010717A (en) * | 2012-05-21 | 2013-11-25 | Asml Netherlands Bv | Determining a structural parameter and correcting an asymmetry property. |
| US9214317B2 (en) * | 2013-06-04 | 2015-12-15 | Kla-Tencor Corporation | System and method of SEM overlay metrology |
| US9347862B2 (en) * | 2013-08-06 | 2016-05-24 | Kla-Tencor Corp. | Setting up a wafer inspection process using programmed defects |
| US10267746B2 (en) * | 2014-10-22 | 2019-04-23 | Kla-Tencor Corp. | Automated pattern fidelity measurement plan generation |
-
2017
- 2017-10-11 US US15/730,551 patent/US10768533B2/en active Active
- 2017-10-19 JP JP2019521060A patent/JP6906050B2/ja active Active
- 2017-10-19 CN CN201780064585.5A patent/CN109964177B/zh active Active
- 2017-10-19 WO PCT/US2017/057453 patent/WO2018075804A1/en not_active Ceased
- 2017-10-19 KR KR1020197014227A patent/KR102276923B1/ko active Active
- 2017-10-20 TW TW106136028A patent/TWI747973B/zh active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2019537745A5 (enExample) | ||
| JP4912241B2 (ja) | インスペクション方法およびインスペクション装置、リソグラフィ装置、リソグラフィ処理セルならびにデバイス製造方法 | |
| JP6723269B2 (ja) | 焦点感応オーバーレイターゲットを使用する焦点決定のためのシステムおよび方法 | |
| JP4812712B2 (ja) | 基板の特性を測定する方法及びデバイス測定方法 | |
| TWI623826B (zh) | 微影設備及器件製造方法 | |
| JP5103082B2 (ja) | リソグラフィシステム、デバイス製造方法、およびコンピュータプログラム | |
| JP2008166755A (ja) | 測定方法、検査装置、およびリソグラフィ装置 | |
| CN105814492B (zh) | 检查设备和方法、光刻系统和器件制造方法 | |
| JP4911541B2 (ja) | リソグラフィツールの光学イメージングシステムの収差をその場で測定する方法 | |
| JP2009002931A (ja) | 計測ツールのキャリブレーションに使用する基板を形成する方法、キャリブレーション基板および計測ツールをキャリブレーションする方法 | |
| KR20090125010A (ko) | 기판 내의 결함들을 결정하는 방법 및 리소그래피 프로세스에서 기판을 노광하기 위한 장치 | |
| TWI687780B (zh) | 評估極紫外光微影設備焦距控制之方法、控制極紫外光微影製程之方法、及極紫外光微影設備 | |
| JP5147865B2 (ja) | デバイス製造方法、リソグラフィ装置およびコンピュータプログラム | |
| JP5059916B2 (ja) | リソグラフィ装置および監視方法 | |
| CN110050232A (zh) | 量测设备、光刻系统和测量结构的方法 | |
| CN113196177A (zh) | 量测传感器、照射系统、和产生具有能够配置的照射斑直径的测量照射的方法 | |
| JP4339841B2 (ja) | リソグラフィ装置及びデバイス製造方法 | |
| JP2023550904A (ja) | メトロロジ方法並びに関連付けられたメトロロジ及びリソグラフィ装置 | |
| KR20230104889A (ko) | 계측 시스템 및 리소그래피 시스템 | |
| TWI692678B (zh) | 用於確定對線寬波動微影光罩之結構無關貢獻的方法 | |
| JP5672800B2 (ja) | フォトマスクの評価システム及びその方法 | |
| JP2006332659A (ja) | リソグラフィ特性向上 | |
| KR102877760B1 (ko) | 국부 균일성 메트릭을 추론하는 방법 | |
| JP6440498B2 (ja) | リソグラフィシステム、リソグラフィ方法、および物品の製造方法 | |
| JP7339826B2 (ja) | マーク位置決定方法、リソグラフィー方法、物品製造方法、プログラムおよびリソグラフィー装置 |