JP6906050B2 - メトロロジー測定に用いるためのプログラムされた欠陥を生成する方法およびシステム - Google Patents

メトロロジー測定に用いるためのプログラムされた欠陥を生成する方法およびシステム Download PDF

Info

Publication number
JP6906050B2
JP6906050B2 JP2019521060A JP2019521060A JP6906050B2 JP 6906050 B2 JP6906050 B2 JP 6906050B2 JP 2019521060 A JP2019521060 A JP 2019521060A JP 2019521060 A JP2019521060 A JP 2019521060A JP 6906050 B2 JP6906050 B2 JP 6906050B2
Authority
JP
Japan
Prior art keywords
array pattern
pattern
defect
metrology
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019521060A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019537745A5 (enExample
JP2019537745A (ja
Inventor
ホン シャオ
ホン シャオ
ナダフ ガットマン
ナダフ ガットマン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Corp filed Critical KLA Corp
Publication of JP2019537745A publication Critical patent/JP2019537745A/ja
Publication of JP2019537745A5 publication Critical patent/JP2019537745A5/ja
Application granted granted Critical
Publication of JP6906050B2 publication Critical patent/JP6906050B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2045—Electron beam lithography processes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2019521060A 2016-10-20 2017-10-19 メトロロジー測定に用いるためのプログラムされた欠陥を生成する方法およびシステム Active JP6906050B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662410397P 2016-10-20 2016-10-20
US62/410,397 2016-10-20
US15/730,551 US10768533B2 (en) 2016-10-20 2017-10-11 Method and system for generating programmed defects for use in metrology measurements
US15/730,551 2017-10-11
PCT/US2017/057453 WO2018075804A1 (en) 2016-10-20 2017-10-19 Method and system for generating programmed defects for use in metrology measurements

Publications (3)

Publication Number Publication Date
JP2019537745A JP2019537745A (ja) 2019-12-26
JP2019537745A5 JP2019537745A5 (enExample) 2020-11-26
JP6906050B2 true JP6906050B2 (ja) 2021-07-21

Family

ID=61969578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019521060A Active JP6906050B2 (ja) 2016-10-20 2017-10-19 メトロロジー測定に用いるためのプログラムされた欠陥を生成する方法およびシステム

Country Status (6)

Country Link
US (1) US10768533B2 (enExample)
JP (1) JP6906050B2 (enExample)
KR (1) KR102276923B1 (enExample)
CN (1) CN109964177B (enExample)
TW (1) TWI747973B (enExample)
WO (1) WO2018075804A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3290911A1 (en) * 2016-09-02 2018-03-07 ASML Netherlands B.V. Method and system to monitor a process apparatus
US10120973B2 (en) 2017-03-15 2018-11-06 Applied Materials Israel Ltd. Method of performing metrology operations and system thereof
US10296702B2 (en) * 2017-03-15 2019-05-21 Applied Materials Israel Ltd. Method of performing metrology operations and system thereof
KR102735498B1 (ko) 2018-12-31 2024-11-29 에이에스엠엘 네델란즈 비.브이. 프로세스 제어를 위한 인-다이 계측 방법 및 시스템
CN113508338B (zh) 2019-02-20 2024-08-27 Asml荷兰有限公司 用于表征半导体器件的制造工艺的方法
US11073768B2 (en) * 2019-06-26 2021-07-27 Kla Corporation Metrology target for scanning metrology
US11914290B2 (en) * 2019-07-24 2024-02-27 Kla Corporation Overlay measurement targets design
US11231376B2 (en) * 2019-08-29 2022-01-25 Taiwan Semiconductor Manufacturing Company Ltd. Method for semiconductor wafer inspection and system thereof
EP3923078A1 (en) * 2020-06-10 2021-12-15 ASML Netherlands B.V. Heigth measurement method and height measurement system
CN117581161A (zh) * 2021-07-13 2024-02-20 Asml控股股份有限公司 具有用于污染物检测和显微镜检查的相控阵列的量测系统
EP4152096A1 (en) * 2021-09-15 2023-03-22 ASML Netherlands B.V. System and method for inspection by failure mechanism classification and identification in a charged particle system
CN117153820A (zh) * 2022-05-30 2023-12-01 三星电子株式会社 重叠测量方法及使用该方法制造的半导体器件
KR102970602B1 (ko) * 2024-03-27 2026-06-01 (주) 오로스테크놀로지 오버레이 계측장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003315284A (ja) * 2002-04-24 2003-11-06 Mitsubishi Electric Corp パターン検査装置の感度調整方法
US7557910B2 (en) 2004-12-19 2009-07-07 Kla-Tencor Corporation System and method for controlling a beam source in a workpiece surface inspection system
KR20060084922A (ko) * 2005-01-21 2006-07-26 삼성전자주식회사 오버레이 측정 장치의 보정 방법
US7916927B2 (en) 2007-01-16 2011-03-29 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
WO2010020331A1 (en) 2008-08-19 2010-02-25 Asml Netherlands B.V. A method of measuring overlay error and a device manufacturing method
CN101650534B (zh) * 2009-07-24 2012-12-12 上海宏力半导体制造有限公司 测量曝光机台焦平面均匀度的方法
CN102483582B (zh) * 2009-08-24 2016-01-20 Asml荷兰有限公司 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底
KR101492205B1 (ko) * 2010-11-12 2015-02-10 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템, 및 디바이스 제조 방법
US9709903B2 (en) * 2011-11-01 2017-07-18 Kla-Tencor Corporation Overlay target geometry for measuring multiple pitches
NL2010717A (en) * 2012-05-21 2013-11-25 Asml Netherlands Bv Determining a structural parameter and correcting an asymmetry property.
US9214317B2 (en) * 2013-06-04 2015-12-15 Kla-Tencor Corporation System and method of SEM overlay metrology
US9347862B2 (en) * 2013-08-06 2016-05-24 Kla-Tencor Corp. Setting up a wafer inspection process using programmed defects
US10267746B2 (en) * 2014-10-22 2019-04-23 Kla-Tencor Corp. Automated pattern fidelity measurement plan generation

Also Published As

Publication number Publication date
CN109964177A (zh) 2019-07-02
TWI747973B (zh) 2021-12-01
US10768533B2 (en) 2020-09-08
KR20190058677A (ko) 2019-05-29
TW201827812A (zh) 2018-08-01
KR102276923B1 (ko) 2021-07-13
US20180113387A1 (en) 2018-04-26
CN109964177B (zh) 2021-11-02
JP2019537745A (ja) 2019-12-26
WO2018075804A1 (en) 2018-04-26

Similar Documents

Publication Publication Date Title
US10768533B2 (en) Method and system for generating programmed defects for use in metrology measurements
JP6790172B2 (ja) 相互レシピ整合性に基づくレシピ選択
US11327410B2 (en) Metrology apparatus and a method of determining a characteristic of interest
US10691030B2 (en) Measurement method, inspection apparatus, patterning device, lithographic system and device manufacturing method
CN107924119B (zh) 检查设备、检查方法及制造方法
KR102294349B1 (ko) 계측 방법, 컴퓨터 제품 및 시스템
JP2022008510A (ja) メトロロジー方法、ターゲット、及び基板
JP2023021158A (ja) モデルベースの限界寸法測定の方法およびシステム
US9633427B2 (en) Method of measuring a property of a target structure, inspection apparatus, lithographic system and device manufacturing method
US20170031246A1 (en) Inspection Apparatus, Inspection Method and Manufacturing Method
KR20180058819A (ko) 계측 방법, 타겟 및 기판
JP2004508559A (ja) 回折シグニチャー分析による焦点の中心の決定
JP2016539370A (ja) リソグラフィメトロロジのための方法、装置及び基板
US8943443B1 (en) Verification of computer simulation of photolithographic process
JP6951495B2 (ja) メトロロジー方法、ターゲット、及び基板
US11150563B2 (en) Method of measuring a parameter of a patterning process, metrology apparatus, target
CN104246972A (zh) 用于光罩的时变强度图的产生
US9151712B1 (en) Rule checking for metrology and inspection
JP7339826B2 (ja) マーク位置決定方法、リソグラフィー方法、物品製造方法、プログラムおよびリソグラフィー装置
KR102821159B1 (ko) 측정 레시피를 결정하기 위한 방법 및 연관된 장치들
TW202248884A (zh) 用於判定與微影製程相關之隨機度量之方法
CN108028210B (zh) 用于使用灵活取样的过程控制的方法及系统
Fukazawa et al. High-density CD measurement technology with high throughput and high precision on the entire surface of a process wafer, capable of capturing randomly occurring CD defects
TW552464B (en) A method of measuring parameters relating to a lithography device
KR20240016285A (ko) 계측 측정 방법 및 장치

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201014

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20201014

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20201014

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20201026

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210127

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210202

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210426

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210601

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20210628

R150 Certificate of patent or registration of utility model

Ref document number: 6906050

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250