TWI747973B - 度量系統、微影工具、度量工具及度量目標 - Google Patents

度量系統、微影工具、度量工具及度量目標 Download PDF

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Publication number
TWI747973B
TWI747973B TW106136028A TW106136028A TWI747973B TW I747973 B TWI747973 B TW I747973B TW 106136028 A TW106136028 A TW 106136028A TW 106136028 A TW106136028 A TW 106136028A TW I747973 B TWI747973 B TW I747973B
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Taiwan
Prior art keywords
array pattern
defect
array
pattern
measurement
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TW106136028A
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English (en)
Chinese (zh)
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TW201827812A (zh
Inventor
宏 蕭
那達夫 古特曼
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美商克萊譚克公司
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Publication of TW201827812A publication Critical patent/TW201827812A/zh
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Publication of TWI747973B publication Critical patent/TWI747973B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Immunology (AREA)
  • Manufacturing & Machinery (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Biochemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW106136028A 2016-10-20 2017-10-20 度量系統、微影工具、度量工具及度量目標 TWI747973B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662410397P 2016-10-20 2016-10-20
US62/410,397 2016-10-20
US15/730,551 US10768533B2 (en) 2016-10-20 2017-10-11 Method and system for generating programmed defects for use in metrology measurements
US15/730,551 2017-10-11

Publications (2)

Publication Number Publication Date
TW201827812A TW201827812A (zh) 2018-08-01
TWI747973B true TWI747973B (zh) 2021-12-01

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Family Applications (1)

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TW106136028A TWI747973B (zh) 2016-10-20 2017-10-20 度量系統、微影工具、度量工具及度量目標

Country Status (6)

Country Link
US (1) US10768533B2 (enExample)
JP (1) JP6906050B2 (enExample)
KR (1) KR102276923B1 (enExample)
CN (1) CN109964177B (enExample)
TW (1) TWI747973B (enExample)
WO (1) WO2018075804A1 (enExample)

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EP3290911A1 (en) * 2016-09-02 2018-03-07 ASML Netherlands B.V. Method and system to monitor a process apparatus
US10296702B2 (en) * 2017-03-15 2019-05-21 Applied Materials Israel Ltd. Method of performing metrology operations and system thereof
US10120973B2 (en) 2017-03-15 2018-11-06 Applied Materials Israel Ltd. Method of performing metrology operations and system thereof
CN113272736B (zh) * 2018-12-31 2025-02-18 Asml荷兰有限公司 用于过程控制的管芯内量测方法和系统
KR102641682B1 (ko) * 2019-02-20 2024-02-27 에이에스엠엘 네델란즈 비.브이. 반도체 디바이스의 제조 프로세스를 특성화하기 위한 방법
US11914290B2 (en) * 2019-07-24 2024-02-27 Kla Corporation Overlay measurement targets design
US11231376B2 (en) * 2019-08-29 2022-01-25 Taiwan Semiconductor Manufacturing Company Ltd. Method for semiconductor wafer inspection and system thereof
EP3923078A1 (en) * 2020-06-10 2021-12-15 ASML Netherlands B.V. Heigth measurement method and height measurement system
CN117581161A (zh) * 2021-07-13 2024-02-20 Asml控股股份有限公司 具有用于污染物检测和显微镜检查的相控阵列的量测系统
EP4152096A1 (en) * 2021-09-15 2023-03-22 ASML Netherlands B.V. System and method for inspection by failure mechanism classification and identification in a charged particle system

Citations (5)

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US20120123581A1 (en) * 2010-11-12 2012-05-17 Asml Netherlands B.V. Metrology Method and Inspection Apparatus, Lithographic System and Device Manufacturing Method
US20150042978A1 (en) * 2013-08-06 2015-02-12 Kla-Tencor Corporation Setting Up a Wafer Inspection Process Using Programmed Defects
JP2015043450A (ja) * 2009-08-24 2015-03-05 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジ装置、リソグラフィ装置、リソグラフィセル及びメトロロジ方法
US20160018742A1 (en) * 2008-08-19 2016-01-21 Asml Netherlands B.V. Method of Measuring Overlay Error and a Device Manufacturing Method
TW201627655A (zh) * 2014-10-22 2016-08-01 克萊譚克公司 自動化圖案保真度量測計劃生成

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JP2003315284A (ja) 2002-04-24 2003-11-06 Mitsubishi Electric Corp パターン検査装置の感度調整方法
US7557910B2 (en) * 2004-12-19 2009-07-07 Kla-Tencor Corporation System and method for controlling a beam source in a workpiece surface inspection system
KR20060084922A (ko) * 2005-01-21 2006-07-26 삼성전자주식회사 오버레이 측정 장치의 보정 방법
US7916927B2 (en) 2007-01-16 2011-03-29 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
CN101650534B (zh) * 2009-07-24 2012-12-12 上海宏力半导体制造有限公司 测量曝光机台焦平面均匀度的方法
US9709903B2 (en) * 2011-11-01 2017-07-18 Kla-Tencor Corporation Overlay target geometry for measuring multiple pitches
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US9214317B2 (en) * 2013-06-04 2015-12-15 Kla-Tencor Corporation System and method of SEM overlay metrology

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US20160018742A1 (en) * 2008-08-19 2016-01-21 Asml Netherlands B.V. Method of Measuring Overlay Error and a Device Manufacturing Method
JP2015043450A (ja) * 2009-08-24 2015-03-05 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジ装置、リソグラフィ装置、リソグラフィセル及びメトロロジ方法
US20120123581A1 (en) * 2010-11-12 2012-05-17 Asml Netherlands B.V. Metrology Method and Inspection Apparatus, Lithographic System and Device Manufacturing Method
US20150042978A1 (en) * 2013-08-06 2015-02-12 Kla-Tencor Corporation Setting Up a Wafer Inspection Process Using Programmed Defects
TW201627655A (zh) * 2014-10-22 2016-08-01 克萊譚克公司 自動化圖案保真度量測計劃生成

Also Published As

Publication number Publication date
JP6906050B2 (ja) 2021-07-21
TW201827812A (zh) 2018-08-01
JP2019537745A (ja) 2019-12-26
CN109964177A (zh) 2019-07-02
US20180113387A1 (en) 2018-04-26
KR102276923B1 (ko) 2021-07-13
US10768533B2 (en) 2020-09-08
CN109964177B (zh) 2021-11-02
KR20190058677A (ko) 2019-05-29
WO2018075804A1 (en) 2018-04-26

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