CN109964177B - 用于产生在度量测量中使用的经编程缺陷的方法及系统 - Google Patents

用于产生在度量测量中使用的经编程缺陷的方法及系统 Download PDF

Info

Publication number
CN109964177B
CN109964177B CN201780064585.5A CN201780064585A CN109964177B CN 109964177 B CN109964177 B CN 109964177B CN 201780064585 A CN201780064585 A CN 201780064585A CN 109964177 B CN109964177 B CN 109964177B
Authority
CN
China
Prior art keywords
array pattern
pattern
defect
array
tool
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201780064585.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN109964177A (zh
Inventor
宏·萧
N·古特曼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Publication of CN109964177A publication Critical patent/CN109964177A/zh
Application granted granted Critical
Publication of CN109964177B publication Critical patent/CN109964177B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2045—Electron beam lithography processes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN201780064585.5A 2016-10-20 2017-10-19 用于产生在度量测量中使用的经编程缺陷的方法及系统 Active CN109964177B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662410397P 2016-10-20 2016-10-20
US62/410,397 2016-10-20
US15/730,551 US10768533B2 (en) 2016-10-20 2017-10-11 Method and system for generating programmed defects for use in metrology measurements
US15/730,551 2017-10-11
PCT/US2017/057453 WO2018075804A1 (en) 2016-10-20 2017-10-19 Method and system for generating programmed defects for use in metrology measurements

Publications (2)

Publication Number Publication Date
CN109964177A CN109964177A (zh) 2019-07-02
CN109964177B true CN109964177B (zh) 2021-11-02

Family

ID=61969578

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780064585.5A Active CN109964177B (zh) 2016-10-20 2017-10-19 用于产生在度量测量中使用的经编程缺陷的方法及系统

Country Status (6)

Country Link
US (1) US10768533B2 (enExample)
JP (1) JP6906050B2 (enExample)
KR (1) KR102276923B1 (enExample)
CN (1) CN109964177B (enExample)
TW (1) TWI747973B (enExample)
WO (1) WO2018075804A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3290911A1 (en) * 2016-09-02 2018-03-07 ASML Netherlands B.V. Method and system to monitor a process apparatus
US10120973B2 (en) 2017-03-15 2018-11-06 Applied Materials Israel Ltd. Method of performing metrology operations and system thereof
US10296702B2 (en) * 2017-03-15 2019-05-21 Applied Materials Israel Ltd. Method of performing metrology operations and system thereof
KR102735498B1 (ko) 2018-12-31 2024-11-29 에이에스엠엘 네델란즈 비.브이. 프로세스 제어를 위한 인-다이 계측 방법 및 시스템
CN113508338B (zh) 2019-02-20 2024-08-27 Asml荷兰有限公司 用于表征半导体器件的制造工艺的方法
US11073768B2 (en) * 2019-06-26 2021-07-27 Kla Corporation Metrology target for scanning metrology
US11914290B2 (en) * 2019-07-24 2024-02-27 Kla Corporation Overlay measurement targets design
US11231376B2 (en) * 2019-08-29 2022-01-25 Taiwan Semiconductor Manufacturing Company Ltd. Method for semiconductor wafer inspection and system thereof
EP3923078A1 (en) * 2020-06-10 2021-12-15 ASML Netherlands B.V. Heigth measurement method and height measurement system
CN117581161A (zh) * 2021-07-13 2024-02-20 Asml控股股份有限公司 具有用于污染物检测和显微镜检查的相控阵列的量测系统
EP4152096A1 (en) * 2021-09-15 2023-03-22 ASML Netherlands B.V. System and method for inspection by failure mechanism classification and identification in a charged particle system
CN117153820A (zh) * 2022-05-30 2023-12-01 三星电子株式会社 重叠测量方法及使用该方法制造的半导体器件
KR102970602B1 (ko) * 2024-03-27 2026-06-01 (주) 오로스테크놀로지 오버레이 계측장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101650534A (zh) * 2009-07-24 2010-02-17 上海宏力半导体制造有限公司 测量曝光机台焦平面均匀度的方法
CN102483582A (zh) * 2009-08-24 2012-05-30 Asml荷兰有限公司 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底
TW201324061A (zh) * 2011-11-01 2013-06-16 克萊譚克公司 用於測量多節距的重疊目標幾何
CN103201682A (zh) * 2010-11-12 2013-07-10 Asml荷兰有限公司 量测方法和设备、光刻系统和器件制造方法
TW201511156A (zh) * 2013-08-06 2015-03-16 克萊譚克公司 使用經程式化缺陷設定一晶圓檢查流程

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003315284A (ja) * 2002-04-24 2003-11-06 Mitsubishi Electric Corp パターン検査装置の感度調整方法
US7557910B2 (en) 2004-12-19 2009-07-07 Kla-Tencor Corporation System and method for controlling a beam source in a workpiece surface inspection system
KR20060084922A (ko) * 2005-01-21 2006-07-26 삼성전자주식회사 오버레이 측정 장치의 보정 방법
US7916927B2 (en) 2007-01-16 2011-03-29 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
WO2010020331A1 (en) 2008-08-19 2010-02-25 Asml Netherlands B.V. A method of measuring overlay error and a device manufacturing method
NL2010717A (en) * 2012-05-21 2013-11-25 Asml Netherlands Bv Determining a structural parameter and correcting an asymmetry property.
US9214317B2 (en) * 2013-06-04 2015-12-15 Kla-Tencor Corporation System and method of SEM overlay metrology
US10267746B2 (en) * 2014-10-22 2019-04-23 Kla-Tencor Corp. Automated pattern fidelity measurement plan generation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101650534A (zh) * 2009-07-24 2010-02-17 上海宏力半导体制造有限公司 测量曝光机台焦平面均匀度的方法
CN102483582A (zh) * 2009-08-24 2012-05-30 Asml荷兰有限公司 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底
CN103201682A (zh) * 2010-11-12 2013-07-10 Asml荷兰有限公司 量测方法和设备、光刻系统和器件制造方法
TW201324061A (zh) * 2011-11-01 2013-06-16 克萊譚克公司 用於測量多節距的重疊目標幾何
TW201511156A (zh) * 2013-08-06 2015-03-16 克萊譚克公司 使用經程式化缺陷設定一晶圓檢查流程

Also Published As

Publication number Publication date
CN109964177A (zh) 2019-07-02
TWI747973B (zh) 2021-12-01
US10768533B2 (en) 2020-09-08
KR20190058677A (ko) 2019-05-29
TW201827812A (zh) 2018-08-01
KR102276923B1 (ko) 2021-07-13
JP6906050B2 (ja) 2021-07-21
US20180113387A1 (en) 2018-04-26
JP2019537745A (ja) 2019-12-26
WO2018075804A1 (en) 2018-04-26

Similar Documents

Publication Publication Date Title
TWI747973B (zh) 度量系統、微影工具、度量工具及度量目標
JP6790172B2 (ja) 相互レシピ整合性に基づくレシピ選択
US10635004B2 (en) Correction using stack difference
CN106415807B (zh) 使用高分辨率全裸片图像数据进行检验
JP6612934B2 (ja) フォトリソグラフィ用レチクルを検査するための検査システム及び方法
CN107924119A (zh) 检查设备、检查方法及制造方法
US11385552B2 (en) Method of measuring a structure, inspection apparatus, lithographic system and device manufacturing method
TWI517210B (zh) Pattern evaluation method and pattern evaluation device
US11988495B2 (en) Through-focus image-based metrology device, operation method thereof, and computing device for executing the operation
KR20180030715A (ko) 전자 빔 이미지에서의 결함 위치 결정
US20140094015A1 (en) Alignment measurement system, overlay measurement system, and method for manufacturing semiconductor device
CN107924852A (zh) 用于基于模型的临界尺寸测量的技术及系统
TWI743910B (zh) 度量衡器件及其偵測設備
JP2020507800A (ja) メトロロジ方法、装置、及びコンピュータプログラム
US7884325B2 (en) Electron beam measurement apparatus
US9151712B1 (en) Rule checking for metrology and inspection
JP4769725B2 (ja) 測定システム及び方法
KR20230021733A (ko) 계측 방법 및 장치, 그리고 컴퓨터 프로그램
TW200937144A (en) Alignment method, exposure method, pattern forming method, and exposure apparatus
US10754260B2 (en) Method and system for process control with flexible sampling
TW202248884A (zh) 用於判定與微影製程相關之隨機度量之方法
CN118302663A (zh) 筛选边缘安置均匀性晶片随机指标
CN108028210B (zh) 用于使用灵活取样的过程控制的方法及系统
US20200402863A1 (en) Methods and systems for defining a process window
CN115704774A (zh) 光刻胶检查设备、光刻胶检查方法以及电子束曝光设备

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant