JP2019536268A - アクティブシャワーヘッド - Google Patents
アクティブシャワーヘッド Download PDFInfo
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- JP2019536268A JP2019536268A JP2019523871A JP2019523871A JP2019536268A JP 2019536268 A JP2019536268 A JP 2019536268A JP 2019523871 A JP2019523871 A JP 2019523871A JP 2019523871 A JP2019523871 A JP 2019523871A JP 2019536268 A JP2019536268 A JP 2019536268A
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- 239000007789 gas Substances 0.000 claims abstract description 423
- 238000000034 method Methods 0.000 claims abstract description 157
- 230000008569 process Effects 0.000 claims abstract description 140
- 239000000758 substrate Substances 0.000 claims abstract description 126
- 238000012546 transfer Methods 0.000 claims description 264
- 238000002156 mixing Methods 0.000 claims description 58
- 238000009826 distribution Methods 0.000 claims description 47
- 238000012545 processing Methods 0.000 claims description 44
- 230000008859 change Effects 0.000 claims description 23
- 230000003287 optical effect Effects 0.000 claims description 17
- 238000005259 measurement Methods 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 14
- 239000012212 insulator Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 11
- 230000005672 electromagnetic field Effects 0.000 claims description 8
- 230000033001 locomotion Effects 0.000 claims description 8
- 238000010586 diagram Methods 0.000 abstract description 20
- 239000010410 layer Substances 0.000 description 356
- 235000012431 wafers Nutrition 0.000 description 34
- 230000007246 mechanism Effects 0.000 description 30
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 238000009413 insulation Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 230000004913 activation Effects 0.000 description 9
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000009616 inductively coupled plasma Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000013307 optical fiber Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- -1 ... Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/46—Measurement of colour; Colour measuring devices, e.g. colorimeters
- G01J3/50—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32981—Gas analysis
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Electromagnetism (AREA)
Abstract
Description
Claims (20)
- 半導体処理のためのシステムであって、
アクチュエータ制御部と、
ガスラインと、
前記ガスラインおよび前記アクチュエータ制御部に接続されたプラズマリアクタと、
を備え、
前記プラズマリアクタは、
チャックアセンブリと、
前記チャックアセンブリの上方に配置されたアクティブシャワーヘッドと、
を備え、
前記アクティブシャワーヘッドは、
複数の基板層であって、前記基板層は、前記アクチュエータ制御部に接続されたアクチュエータ/移送構成要素を備え、前記アクチュエータ/移送構成要素は、ガスチャネルを介して前記ガスラインに接続されている、複数の基板層と、
前記基板層の下方に配置された電極層であって、前記電極層および前記アクチュエータ/移送構成要素は、前記チャックアセンブリと前記アクティブシャワーヘッドとの間のギャップにつながる開口部を共有する、電極層と、
を備え、
前記アクチュエータ制御部は、前記ガスラインおよび前記ガスチャネルから受け入れられた1または複数の処理ガスが前記開口部を通して前記ギャップ内に通過することを可能にするように、前記アクチュエータ/移送構成要素を制御するよう構成されている、システム。 - 請求項1に記載のシステムであって、前記ガスラインは、前記アクティブシャワーヘッドの上面に取り付けられており、ガスシリンダと前記アクティブシャワーヘッドとの間のガスボックスに接続されることなしに、前記ガスシリンダに接続されている、システム。
- 請求項1に記載のシステムであって、前記アクチュエータ/移送構成要素は、アクチュエータを備え、前記アクチュエータは、前記基板層の内の1つの中に配置され、前記アクチュエータ制御部に接続され、前記アクチュエータ制御部は、伸長または収縮するように前記アクチュエータを制御するよう構成されている、システム。
- 請求項1に記載のシステムであって、前記アクティブシャワーヘッドは、前記電極層の下方に絶縁体コーティングを備え、前記開口部は、前記絶縁体コーティングを通して伸びている、システム。
- 請求項1に記載のシステムであって、前記電極層は、容量電極プレート、または、少なくとも高周波(RF)コイルを備える、システム。
- 請求項1に記載のシステムであって、前記基板層は、
前記アクティブシャワーヘッドの構成要素を上に支持するための支持基板層と、
前記支持基板層の下方に配置されたアクチュエータ層であって、前記アクチュエータ層は、前記アクチュエータ制御部に接続されたアクチュエータを有する、アクチュエータ層と、
前記アクチュエータ層の下方に配置されたダイヤフラム層であって、前記ダイヤフラム層の底面は、複数のダイヤフラムとして機能する、ダイヤフラム層と、
前記ダイヤフラム層の下方に配置されたバルブシート層であって、前記バルブシート層は、移送チャネルおよびガス通路を備える、バルブシート層と、
前記バルブシート層の下方に配置されたガス分配層であって、前記ガス分配層は、移送チャネル、ガス受け入れチャンバ、および、通路チャネルを備える、ガス分配層と、
を備え、
前記アクチュエータ制御部は、前記通路チャネルから受け入れられた前記1または複数の処理ガスが、前記ガス受け入れチャンバ、前記ガス通路、前記バルブシート層の前記移送チャネル、および、前記ガス分配層の前記移送チャネルを介して、前記ギャップ内に通過することを可能にするように、前記アクチュエータを制御するよう構成されている、システム。 - 請求項1に記載のシステムであって、前記基板層は、
前記アクティブシャワーヘッドの構成要素を上に支持するための支持基板層と、
前記支持基板層の下方に配置されたダイヤフラム層であって、前記ダイヤフラム層の底面は、複数のダイヤフラムとして機能し、前記ダイヤフラム層は、アクチュエータを備える、ダイヤフラム層と、
前記ダイヤフラム層の下方に配置されたバルブシート層であって、前記バルブシート層は、移送チャネルおよびガス通路を備える、バルブシート層と、
前記バルブシート層の下方に配置されたガス分配層であって、前記ガス分配層は、移送チャネル、ガス受け入れチャンバ、および、通路チャネルを備える、ガス分配層と、
を備え、
前記アクチュエータ制御部は、前記通路チャネルから受け入れられた前記1または複数の処理ガスが、前記ガス受け入れチャンバ、前記ガス通路、前記バルブシート層の前記移送チャネル、および、前記ガス分配層の前記移送チャネルを介して、前記ギャップ内に通過することを可能にするように、前記アクチュエータを制御するよう構成されている、システム。 - 請求項1に記載のシステムであって、前記アクチュエータ/移送構成要素は、前記1または複数の処理ガスを前記ギャップ内の第1ゾーンに移送するよう構成され、前記アクティブシャワーヘッドは、さらなるアクチュエータ/移送構成要素を備え、前記さらなるアクティブ/移送構成要素は、1または複数の処理ガスを前記ギャップ内の第2ゾーンに移送するよう構成されている、システム。
- 請求項1に記載のシステムであって、前記アクティブシャワーヘッドは、前記1または複数の処理ガスに関連するパラメータを測定するための測定ツールを備えるよう構成された測定層を備える、システム。
- 請求項1に記載のシステムであって、前記アクティブシャワーヘッドは、前記1または複数の処理ガスを貯留するためのガスリザーバ層を備える、システム。
- 請求項1に記載のシステムであって、前記アクチュエータ制御部は、
光を発するよう構成された光源と、
或る波長の光を提供するように前記光を分離するために前記光源に接続された光分波器と、
前記波長の前記光を受け入れて電気信号を生成するために前記光分波器に接続されたマイクロアクチュエータ回路であって、前記アクチュエータ/移送構成要素は、前記マイクロアクチュエータ回路に接続されたアクチュエータを備え、前記アクチュエータは、前記電気信号によって生成された電磁場の影響下で伸縮するよう構成されている、マイクロアクチュエータ回路と、
を備える、システム。 - 請求項11に記載のシステムであって、前記マイクロアクチュエータ回路は、
前記波長の前記光を検出するよう構成されたフォトダイオードと、
前記電気信号のインピーダンスを変えるためにフォトダイオードと直列に接続されたインダクタと、
を備える、システム。 - 半導体処理のためのシステムであって、
アクチュエータ制御部と、
ガスラインと、
前記ガスラインおよび前記アクチュエータ制御部に接続されたプラズマリアクタと、
を備え、
前記プラズマリアクタは、
チャックアセンブリと、
前記チャックアセンブリの上方のアクティブシャワーヘッドと、を備え、
前記アクティブシャワーヘッドは、
複数の基板層であって、前記基板層は、前記アクチュエータ制御部に接続されたアクチュエータ/移送構成要素を備え、前記アクチュエータ/移送構成要素は、ガスチャネルを介して前記ガスラインに接続されている、複数の基板層と、
前記基板層の下方に配置された電極層と、
前記電極層の下方に配置された混合チャンバと、
前記混合チャンバの下方に配置され、複数の開口部を有するシャワーヘッドプレートであって、前記電極層および前記アクチュエータ/移送構成要素は、前記混合チャンバにつながる開口部を共有する、シャワーヘッドプレートと、
を備え、
前記アクチュエータ制御部は、ガス混合物を生成するために、前記ガスラインおよび前記ガスチャネルから受け入れられた1または複数の処理ガスが、前記電極層および前記アクチュエータ/移送構成要素によって共有された前記開口部を通して前記混合チャンバ内に移動することを可能にするように、前記アクチュエータ/移送構成要素を制御するよう構成され、前記ガス混合物は、前記シャワーヘッドプレートの前記複数の開口部を介して前記ギャップ内に流れるよう構成されている、システム。 - 請求項13に記載のシステムであって、前記ガスラインは、前記アクティブシャワーヘッドの上面に取り付けられており、ガスシリンダと前記アクティブシャワーヘッドとの間のガスボックスに接続されることなしに、前記ガスシリンダに接続されている、システム。
- 請求項13に記載のシステムであって、前記アクチュエータ/移送構成要素は、アクチュエータを備え、前記アクチュエータは、前記基板層の内の1つの中に配置され、前記アクチュエータ制御部に接続され、前記アクチュエータ制御部は、伸長または収縮するように前記アクチュエータを制御するよう構成されている、システム。
- 請求項13に記載のシステムであって、前記アクチュエータ/移送構成要素は、前記1または複数の処理ガスを前記混合チャンバ内のゾーンに移送するよう構成され、前記アクティブシャワーヘッドは、さらなるアクチュエータ/移送構成要素を備え、前記さらなるアクティブ/移送構成要素は、1または複数の処理ガスを前記混合チャンバ内の別のゾーンに移送するよう構成されている、システム。
- 半導体処理のためのアクティブシャワーヘッドであって、
複数の基板層であって、前記基板層は、アクチュエータ/移送構成要素を備え、前記アクチュエータ/移送構成要素は、ガスチャネルを介してガスラインに接続されている、複数の基板層と、
前記基板層の下方に配置された電極層であって、前記電極層および前記アクチュエータ/移送構成要素は、開口部を共有する、電極層と、
を備え、
前記アクチュエータ/移送構成要素は、前記ガスラインおよび前記ガスチャネルから受け入れられた1または複数の処理ガスが前記開口部内に移動することを可能にするよう構成されている、アクティブシャワーヘッド。 - 請求項17に記載のアクティブシャワーヘッドであって、前記基板層は、
アクチュエータを有するアクチュエータ層と、
前記アクチュエータ層の下方に配置されたダイヤフラム層であって、前記ダイヤフラム層の底面は、複数のダイヤフラムとして機能する、ダイヤフラム層と、
前記ダイヤフラム層の下方に配置されたバルブシート層であって、前記バルブシート層は、移送チャネルおよびガス通路を備える、バルブシート層と、
前記バルブシート層の下方に配置されたガス分配層であって、前記ガス分配層は、移送チャネル、ガス受け入れチャンバ、および、通路チャネルを備える、ガス分配層と、
を備え、
前記アクチュエータは、前記通路チャネルから受け入れられた前記1または複数の処理ガスが、前記ガス受け入れチャンバ、前記ガス通路、および、前記バルブシート層の前記移送チャネルを介して、前記ガス分配層の前記移送チャネルに通過することを可能にするように動くよう構成されている、アクティブシャワーヘッド。 - 請求項17に記載のアクティブシャワーヘッドであって、前記基板層は、
底面を有するダイヤフラム層であって、前記ダイヤフラム層の底面は、複数のダイヤフラムであり、前記ダイヤフラム層は、アクチュエータを備える、ダイヤフラム層と、
前記ダイヤフラム層の下方に配置されたバルブシート層であって、前記バルブシート層は、移送チャネルおよびガス通路を備える、バルブシート層と、
前記バルブシート層の下方に配置されたガス分配層であって、前記ガス分配層は、移送チャネル、ガス受け入れチャンバ、および、通路チャネルを備える、ガス分配層と、
を備え、
前記アクチュエータは、前記通路チャネルから受け入れられた前記1または複数の処理ガスが、前記ガス受け入れチャンバ、前記ガス通路、および、前記バルブシート層の前記移送チャネルを介して、前記ガス分配層の前記移送チャネルに通過することを可能にするように動くよう構成されている、アクティブシャワーヘッド。 - 請求項17に記載のアクティブシャワーヘッドであって、上面を有し、前記ガスラインは、前記アクティブシャワーヘッドの前記上面に取り付けられており、ガスシリンダと前記アクティブシャワーヘッドとの間のガスボックスに接続されることなしに、前記ガスシリンダに接続されている、アクティブシャワーヘッド。
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TWI778989B (zh) | 2022-10-01 |
KR20190069602A (ko) | 2019-06-19 |
US20180130640A1 (en) | 2018-05-10 |
JP7113010B2 (ja) | 2022-08-04 |
US10804079B2 (en) | 2020-10-13 |
KR20220103191A (ko) | 2022-07-21 |
US10403476B2 (en) | 2019-09-03 |
EP3539150B1 (en) | 2022-06-15 |
US20190371573A1 (en) | 2019-12-05 |
CN118675968A (zh) | 2024-09-20 |
EP3539150A1 (en) | 2019-09-18 |
CN109891565B (zh) | 2024-04-26 |
TW202301420A (zh) | 2023-01-01 |
CN109891565A (zh) | 2019-06-14 |
KR102419627B1 (ko) | 2022-07-08 |
KR102649016B1 (ko) | 2024-03-18 |
TWI843195B (zh) | 2024-05-21 |
TW201830460A (zh) | 2018-08-16 |
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EP3539150A4 (en) | 2020-07-08 |
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