JP2019530222A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2019530222A5 JP2019530222A5 JP2019513013A JP2019513013A JP2019530222A5 JP 2019530222 A5 JP2019530222 A5 JP 2019530222A5 JP 2019513013 A JP2019513013 A JP 2019513013A JP 2019513013 A JP2019513013 A JP 2019513013A JP 2019530222 A5 JP2019530222 A5 JP 2019530222A5
- Authority
- JP
- Japan
- Prior art keywords
- ions
- features
- surface features
- layer
- feature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000002500 ions Chemical class 0.000 description 94
- 239000000758 substrate Substances 0.000 description 41
- 239000000463 material Substances 0.000 description 33
- 238000000034 method Methods 0.000 description 33
- 238000000605 extraction Methods 0.000 description 26
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 238000005530 etching Methods 0.000 description 16
- 238000000059 patterning Methods 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 11
- 238000013461 design Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000005499 meniscus Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- ADKPKEZZYOUGBZ-UHFFFAOYSA-N [C].[O].[Si] Chemical compound [C].[O].[Si] ADKPKEZZYOUGBZ-UHFFFAOYSA-N 0.000 description 2
- UBMXAAKAFOKSPA-UHFFFAOYSA-N [N].[O].[Si] Chemical compound [N].[O].[Si] UBMXAAKAFOKSPA-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662398032P | 2016-09-22 | 2016-09-22 | |
| US62/398,032 | 2016-09-22 | ||
| US15/384,496 | 2016-12-20 | ||
| US15/384,496 US10229832B2 (en) | 2016-09-22 | 2016-12-20 | Techniques for forming patterned features using directional ions |
| PCT/US2017/050958 WO2018057327A1 (en) | 2016-09-22 | 2017-09-11 | Techniques for forming patterned features using directional ions |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019530222A JP2019530222A (ja) | 2019-10-17 |
| JP2019530222A5 true JP2019530222A5 (https=) | 2020-05-28 |
| JP6889773B2 JP6889773B2 (ja) | 2021-06-18 |
Family
ID=61621300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019513013A Active JP6889773B2 (ja) | 2016-09-22 | 2017-09-11 | 基板およびその上に配置された層のパターニング方法、ならびにデバイス構造の形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10229832B2 (https=) |
| JP (1) | JP6889773B2 (https=) |
| KR (1) | KR102363138B1 (https=) |
| CN (1) | CN109791874B (https=) |
| TW (1) | TWI725230B (https=) |
| WO (1) | WO2018057327A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10658184B2 (en) * | 2016-12-15 | 2020-05-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pattern fidelity enhancement with directional patterning technology |
| US10861698B2 (en) | 2017-08-29 | 2020-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pattern fidelity enhancement |
| US10546770B2 (en) | 2018-05-02 | 2020-01-28 | Varian Semiconductor Equipment Associates, Inc. | Method and device isolation structure in finFET |
| US11004729B2 (en) | 2018-06-27 | 2021-05-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing semiconductor devices |
| US11796922B2 (en) | 2019-09-30 | 2023-10-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing semiconductor devices |
| US20260082879A1 (en) * | 2024-09-18 | 2026-03-19 | Tel Manufacturing And Engineering Of America, Inc. | Directional sidewall deposition using directional beam |
Family Cites Families (60)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4307179A (en) * | 1980-07-03 | 1981-12-22 | International Business Machines Corporation | Planar metal interconnection system and process |
| US4484979A (en) | 1984-04-16 | 1984-11-27 | At&T Bell Laboratories | Two-step anisotropic etching process for patterning a layer without penetrating through an underlying thinner layer |
| US4680085A (en) | 1986-04-14 | 1987-07-14 | Ovonic Imaging Systems, Inc. | Method of forming thin film semiconductor devices |
| JPH04124809A (ja) * | 1990-09-14 | 1992-04-24 | Toppan Printing Co Ltd | Ｘ線露光用マスクの製造方法 |
| JP2932650B2 (ja) * | 1990-09-17 | 1999-08-09 | 松下電器産業株式会社 | 微細構造物の製造方法 |
| JP2757838B2 (ja) | 1995-10-25 | 1998-05-25 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP3053072B2 (ja) * | 1996-09-10 | 2000-06-19 | 東京応化工業株式会社 | レジスト積層体及びそれを用いたパターン形成方法 |
| US6414366B1 (en) | 1998-07-29 | 2002-07-02 | Tdk Corporation | Thin-film magnetic head wafer and manufacturing method of thin-film magnetic head |
| JP2000122267A (ja) * | 1998-10-14 | 2000-04-28 | Nikon Corp | ステンシル型レチクルのリペア方法 |
| US6238582B1 (en) | 1999-03-30 | 2001-05-29 | Veeco Instruments, Inc. | Reactive ion beam etching method and a thin film head fabricated using the method |
| US6787052B1 (en) | 2000-06-19 | 2004-09-07 | Vladimir Vaganov | Method for fabricating microstructures with deep anisotropic etching of thick silicon wafers |
| US6998219B2 (en) * | 2001-06-27 | 2006-02-14 | University Of South Florida | Maskless photolithography for etching and deposition |
| DE10205077B4 (de) | 2002-02-07 | 2007-03-08 | Infineon Technologies Ag | Halbleiterspeicherzelle mit einem Graben und einem planaren Auswahltransistor und Verfahren zu ihrer Herstellung |
| US7041598B2 (en) * | 2003-06-25 | 2006-05-09 | Hewlett-Packard Development Company, L.P. | Directional ion etching process for patterning self-aligned via contacts |
| US6794256B1 (en) | 2003-08-04 | 2004-09-21 | Advanced Micro Devices Inc. | Method for asymmetric spacer formation |
| JP4054325B2 (ja) | 2004-08-11 | 2008-02-27 | 日本電信電話株式会社 | 半導体素子の作製方法及び半導体素子 |
| US20080002749A1 (en) | 2004-09-29 | 2008-01-03 | California Institute Of Technology | Material processing method for semiconductor lasers |
| KR100708530B1 (ko) | 2004-12-31 | 2007-04-16 | 동부일렉트로닉스 주식회사 | 얕은 트랜치 소자 분리막 공정 중 디봇 형상 방지방법 |
| JP4867171B2 (ja) | 2005-01-21 | 2012-02-01 | 富士電機株式会社 | 半導体装置の製造方法 |
| US7696102B2 (en) | 2005-03-31 | 2010-04-13 | Gang Zhang | Methods for fabrication of three-dimensional structures |
| US20070051622A1 (en) | 2005-09-02 | 2007-03-08 | Applied Materials, Inc. | Simultaneous ion milling and sputter deposition |
| US7323374B2 (en) * | 2005-09-19 | 2008-01-29 | International Business Machines Corporation | Dense chevron finFET and method of manufacturing same |
| US7790621B2 (en) | 2006-02-23 | 2010-09-07 | Sophia Wen | Ion implantation for increasing etch rate differential between adjacent materials |
| KR20070122050A (ko) * | 2006-06-23 | 2007-12-28 | 주식회사 하이닉스반도체 | 이중 패터닝 공정을 이용한 캐패시터 패턴 형성 방법 |
| US7542497B2 (en) | 2006-07-18 | 2009-06-02 | Binoptics Corporation | AlGaInN-based lasers with dovetailed ridge |
| US7892928B2 (en) | 2007-03-23 | 2011-02-22 | International Business Machines Corporation | Method of forming asymmetric spacers and methods of fabricating semiconductor device using asymmetric spacers |
| US8652763B2 (en) | 2007-07-16 | 2014-02-18 | The Board Of Trustees Of The University Of Illinois | Method for fabricating dual damascene profiles using sub pixel-voting lithography and devices made by same |
| US7625790B2 (en) * | 2007-07-26 | 2009-12-01 | International Business Machines Corporation | FinFET with sublithographic fin width |
| US20090084757A1 (en) | 2007-09-28 | 2009-04-02 | Yuri Erokhin | Uniformity control for ion beam assisted etching |
| US7994002B2 (en) | 2008-11-24 | 2011-08-09 | Applied Materials, Inc. | Method and apparatus for trench and via profile modification |
| US7862962B2 (en) * | 2009-01-20 | 2011-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit layout design |
| US7767977B1 (en) | 2009-04-03 | 2010-08-03 | Varian Semiconductor Equipment Associates, Inc. | Ion source |
| US8603591B2 (en) | 2009-04-03 | 2013-12-10 | Varian Semiconductor Ewuipment Associates, Inc. | Enhanced etch and deposition profile control using plasma sheath engineering |
| US8101510B2 (en) | 2009-04-03 | 2012-01-24 | Varian Semiconductor Equipment Associates, Inc. | Plasma processing apparatus |
| US8192641B2 (en) | 2009-07-23 | 2012-06-05 | GlobalFoundries, Inc. | Methods for fabricating non-planar electronic devices having sidewall spacers formed adjacent selected surfaces |
| JP5011360B2 (ja) * | 2009-09-21 | 2012-08-29 | 株式会社東芝 | フォトマスクの設計方法 |
| US8089050B2 (en) | 2009-11-19 | 2012-01-03 | Twin Creeks Technologies, Inc. | Method and apparatus for modifying a ribbon-shaped ion beam |
| US8778603B2 (en) * | 2010-03-15 | 2014-07-15 | Varian Semiconductor Equipment Associates, Inc. | Method and system for modifying substrate relief features using ion implantation |
| US8421139B2 (en) | 2010-04-07 | 2013-04-16 | International Business Machines Corporation | Structure and method to integrate embedded DRAM with finfet |
| US8252691B2 (en) * | 2010-04-14 | 2012-08-28 | Asm Genitech Korea Ltd. | Method of forming semiconductor patterns |
| US8288741B1 (en) | 2011-08-16 | 2012-10-16 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for three dimensional ion processing |
| US8339752B1 (en) | 2011-09-26 | 2012-12-25 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic head with wide sensor back edge, low resistance, and high signal to-noise ratio and methods of production thereof |
| US8881066B2 (en) * | 2011-12-29 | 2014-11-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mandrel modification for achieving single fin fin-like field effect transistor (FinFET) device |
| US9252021B2 (en) * | 2012-02-09 | 2016-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for patterning a plurality of features for Fin-like field-effect transistor (FinFET) devices |
| US8765608B2 (en) * | 2012-05-01 | 2014-07-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for forming trenches |
| US9653309B2 (en) | 2012-05-25 | 2017-05-16 | The Regents Of The University Of California | Method for fabrication of high aspect ratio trenches and formation of nanoscale features therefrom |
| US8637365B2 (en) | 2012-06-06 | 2014-01-28 | International Business Machines Corporation | Spacer isolation in deep trench |
| CN104584196B (zh) * | 2012-06-29 | 2017-02-22 | 佳能安内华股份有限公司 | 离子束处理方法和离子束处理装置 |
| US9118001B2 (en) | 2012-07-11 | 2015-08-25 | Varian Semiconductor Equipment Associates, Inc. | Techniques for treating sidewalls of patterned structures using angled ion treatment |
| US9190498B2 (en) | 2012-09-14 | 2015-11-17 | Varian Semiconductor Equipment Associates, Inc. | Technique for forming a FinFET device using selective ion implantation |
| US9287178B2 (en) | 2012-10-01 | 2016-03-15 | Globalfoundries Inc. | Multi-gate field effect transistor (FET) including isolated fin body |
| US9337271B2 (en) | 2012-12-28 | 2016-05-10 | Mitsubishi Electric Corporation | Silicon-carbide semiconductor device and manufacturing method therefor |
| CN105008891B (zh) | 2013-01-11 | 2018-02-06 | Fei公司 | 用于变更蚀刻速率的离子注入 |
| US9153478B2 (en) | 2013-03-15 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Spacer etching process for integrated circuit design |
| US8791024B1 (en) * | 2013-05-14 | 2014-07-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to define multiple layer patterns using a single exposure |
| US20140357080A1 (en) | 2013-06-04 | 2014-12-04 | Tokyo Electron Limited | Method for preferential shrink and bias control in contact shrink etch |
| KR101509529B1 (ko) | 2013-07-31 | 2015-04-07 | 아주대학교산학협력단 | 3차원 형태의 구리 나노구조물 및 그 형성 방법 |
| US9934981B2 (en) | 2013-09-26 | 2018-04-03 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing substrates using directional reactive ion etching |
| US9287123B2 (en) | 2014-04-28 | 2016-03-15 | Varian Semiconductor Equipment Associates, Inc. | Techniques for forming angled structures for reduced defects in heteroepitaxy of semiconductor films |
| US10008384B2 (en) * | 2015-06-25 | 2018-06-26 | Varian Semiconductor Equipment Associates, Inc. | Techniques to engineer nanoscale patterned features using ions |
-
2016
- 2016-12-20 US US15/384,496 patent/US10229832B2/en active Active
-
2017
- 2017-09-11 JP JP2019513013A patent/JP6889773B2/ja active Active
- 2017-09-11 CN CN201780058139.3A patent/CN109791874B/zh active Active
- 2017-09-11 WO PCT/US2017/050958 patent/WO2018057327A1/en not_active Ceased
- 2017-09-11 KR KR1020197008831A patent/KR102363138B1/ko active Active
- 2017-09-13 TW TW106131416A patent/TWI725230B/zh active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6889773B2 (ja) | 基板およびその上に配置された層のパターニング方法、ならびにデバイス構造の形成方法 | |
| JP2019530222A5 (https=) | ||
| US11488823B2 (en) | Techniques to engineer nanoscale patterned features using ions | |
| TWI719156B (zh) | 對襯底進行加工的方法 | |
| TWI754174B (zh) | 具有深度調變的斜角光柵的光學組件及其形成方法 | |
| US11043394B1 (en) | Techniques and apparatus for selective shaping of mask features using angled beams | |
| JP2018521509A5 (ja) | 基板をパターン化する方法 | |
| JP7738601B2 (ja) | 傾斜イオンビームを使用した一方向の孔伸長のための技術及び装置 | |
| KR20180073790A (ko) | 반도체 소자의 미세 패턴 형성 방법 | |
| US20260123357A1 (en) | Pattern overlay correction for integrated circuit fabrication |