JP2019527925A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2019527925A5 JP2019527925A5 JP2018564318A JP2018564318A JP2019527925A5 JP 2019527925 A5 JP2019527925 A5 JP 2019527925A5 JP 2018564318 A JP2018564318 A JP 2018564318A JP 2018564318 A JP2018564318 A JP 2018564318A JP 2019527925 A5 JP2019527925 A5 JP 2019527925A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- radio frequency
- microelectronic
- frequency device
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1655266A FR3052592B1 (fr) | 2016-06-08 | 2016-06-08 | Structure pour applications radiofrequences |
| FR1655266 | 2016-06-08 | ||
| PCT/FR2017/051418 WO2017212160A1 (fr) | 2016-06-08 | 2017-06-06 | Structure pour applications radiofrequences |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019527925A JP2019527925A (ja) | 2019-10-03 |
| JP2019527925A5 true JP2019527925A5 (enExample) | 2020-07-16 |
| JP7053502B2 JP7053502B2 (ja) | 2022-04-12 |
Family
ID=56511794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018564318A Active JP7053502B2 (ja) | 2016-06-08 | 2017-06-06 | 無線周波数用途のための構造 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US10943815B2 (enExample) |
| EP (1) | EP3469627B1 (enExample) |
| JP (1) | JP7053502B2 (enExample) |
| KR (1) | KR102369549B1 (enExample) |
| FR (1) | FR3052592B1 (enExample) |
| SG (2) | SG10201913097SA (enExample) |
| TW (1) | TWI733831B (enExample) |
| WO (1) | WO2017212160A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3052592B1 (fr) * | 2016-06-08 | 2018-05-18 | Soitec | Structure pour applications radiofrequences |
| FR3062517B1 (fr) * | 2017-02-02 | 2019-03-15 | Soitec | Structure pour application radiofrequence |
| CN110828962B (zh) | 2018-08-09 | 2021-08-03 | 财团法人工业技术研究院 | 天线阵列模块及其制造方法 |
| US10658474B2 (en) * | 2018-08-14 | 2020-05-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming thin semiconductor-on-insulator (SOI) substrates |
| FR3086096B1 (fr) * | 2018-09-14 | 2021-08-27 | Soitec Silicon On Insulator | Procede de realisation d'un substrat avance pour une integration hybride |
| US11661337B2 (en) * | 2020-10-19 | 2023-05-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Comb electrode release process for MEMS structure |
| US11658206B2 (en) * | 2020-11-13 | 2023-05-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deep trench structure for a capacitive device |
| US20220406649A1 (en) * | 2021-06-22 | 2022-12-22 | Texas Instruments Incorporated | Passive component q factor enhancement with elevated resistance region of substrate |
| FR3126541B1 (fr) | 2021-09-02 | 2025-01-10 | Commissariat Energie Atomique | Procédé de fabrication d’une structure multicouche |
| FR3134478B1 (fr) * | 2022-04-06 | 2025-07-25 | Commissariat Energie Atomique | Substrat comprenant des vias et procédés de fabrication associés |
| FR3142289A1 (fr) * | 2022-11-23 | 2024-05-24 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procédé de fabrication d’un empilement comprenant une couche isolante |
| CN116902904A (zh) * | 2023-07-14 | 2023-10-20 | 绍兴中芯集成电路制造股份有限公司 | 一种mems器件、mems器件的制备方法和电子装置 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3582890B2 (ja) * | 1995-05-23 | 2004-10-27 | 株式会社日立製作所 | 半導体装置 |
| US6312568B2 (en) * | 1999-12-07 | 2001-11-06 | Applied Materials, Inc. | Two-step AIN-PVD for improved film properties |
| KR100388011B1 (ko) * | 2000-01-17 | 2003-06-18 | 삼성전기주식회사 | ＧａＮ박막 ＳＡＷ필터 및 이를 제조하는 방법 |
| US6391792B1 (en) * | 2000-05-18 | 2002-05-21 | Taiwan Semiconductor Manufacturing Co., Ltd | Multi-step chemical mechanical polish (CMP) planarizing method for forming patterned planarized aperture fill layer |
| US20090179027A1 (en) * | 2007-12-29 | 2009-07-16 | Saint-Gobain Ceramics & Plastics, Inc. | Coaxial ceramic igniter and methods of fabrication |
| US8232920B2 (en) * | 2008-08-07 | 2012-07-31 | International Business Machines Corporation | Integrated millimeter wave antenna and transceiver on a substrate |
| US8492868B2 (en) * | 2010-08-02 | 2013-07-23 | International Business Machines Corporation | Method, apparatus, and design structure for silicon-on-insulator high-bandwidth circuitry with reduced charge layer |
| CN102169552A (zh) | 2011-01-28 | 2011-08-31 | 上海集成电路研发中心有限公司 | 射频识别标签及其制造方法 |
| US9070585B2 (en) * | 2012-02-24 | 2015-06-30 | Semiconductor Components Industries, Llc | Electronic device including a trench and a conductive structure therein and a process of forming the same |
| CN103022054B (zh) * | 2012-12-21 | 2016-12-28 | 上海华虹宏力半导体制造有限公司 | 绝缘体上硅射频器件及绝缘体上硅衬底 |
| CN103077949B (zh) * | 2013-01-28 | 2016-09-14 | 上海华虹宏力半导体制造有限公司 | 绝缘体上硅射频器件及其制作方法 |
| US9373613B2 (en) * | 2013-12-31 | 2016-06-21 | Skyworks Solutions, Inc. | Amplifier voltage limiting using punch-through effect |
| EP3024020A1 (en) * | 2014-11-19 | 2016-05-25 | Nxp B.V. | Semiconductor device and method |
| WO2016209263A1 (en) * | 2015-06-26 | 2016-12-29 | Intel Corporation | GALLIUM NITRIDE (GaN) TRANSISTOR STRUCTURES ON A SUBSTRATE |
| DE112015007201T5 (de) * | 2015-12-21 | 2018-09-06 | Intel Corporation | Integrierte hf-frontend-strukturen |
| FR3052592B1 (fr) * | 2016-06-08 | 2018-05-18 | Soitec | Structure pour applications radiofrequences |
-
2016
- 2016-06-08 FR FR1655266A patent/FR3052592B1/fr active Active
-
2017
- 2017-06-06 WO PCT/FR2017/051418 patent/WO2017212160A1/fr not_active Ceased
- 2017-06-06 JP JP2018564318A patent/JP7053502B2/ja active Active
- 2017-06-06 SG SG10201913097SA patent/SG10201913097SA/en unknown
- 2017-06-06 SG SG11201810415PA patent/SG11201810415PA/en unknown
- 2017-06-06 EP EP17742463.7A patent/EP3469627B1/fr active Active
- 2017-06-06 KR KR1020187034754A patent/KR102369549B1/ko active Active
- 2017-06-06 US US16/308,602 patent/US10943815B2/en active Active
- 2017-06-07 TW TW106118833A patent/TWI733831B/zh active
-
2020
- 2020-12-02 US US17/109,978 patent/US11367650B2/en active Active
-
2022
- 2022-05-18 US US17/663,898 patent/US11923239B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2019527925A5 (enExample) | ||
| US10693019B2 (en) | Film scheme for a high density trench capacitor | |
| TWI733831B (zh) | 用於射頻應用之結構 | |
| JP4956649B2 (ja) | 炭化珪素基板、半導体装置およびｓｏｉウエハ | |
| JP2016535441A5 (enExample) | ||
| US20110108950A1 (en) | Vertical metal insulator metal capacitor | |
| US9355972B2 (en) | Method for making a dielectric region in a bulk silicon substrate providing a high-Q passive resonator | |
| CN103094068A (zh) | 高密度嵌入式电容器及其制作方法 | |
| JP6803042B2 (ja) | 貫通電極及びその製造方法、並びに半導体装置及びその製造方法 | |
| FI3193361T3 (fi) | Menetelmä erittäin resistiivisen kerroksen sisältävien puolijohderakenteiden valmistamiseksi ja liittyviä puolijohderakenteita | |
| RU2014112050A (ru) | Устройства хранения энергии с по меньшей мере одной пористой поликристаллической подложкой | |
| CN106158829A (zh) | 包括限定空隙的材料的电子器件及其形成方法 | |
| KR20150063650A (ko) | 배선들 사이에 에어갭을 형성하는 방법 및 이에 의한 배선 구조 | |
| JP2009117821A5 (enExample) | ||
| CN103681497A (zh) | 一种半导体器件的制备方法 | |
| WO2018063303A1 (en) | Dielectric gap-fill material deposition | |
| KR102583706B1 (ko) | 반도체 장치의 제조 방법 | |
| KR101060559B1 (ko) | 반도체 소자의 절연막 및 그 형성 방법 | |
| WO2011160466A1 (zh) | 层间介质层及其制造方法、具有该层间介质层的半导体器件 | |
| KR102857493B1 (ko) | 반도체 장치 | |
| US8716104B1 (en) | Method of fabricating isolation structure | |
| KR102718078B1 (ko) | 탄화 규소 반도체 공정에서 게이트 옥사이드 식각 방법 | |
| CN107170723A (zh) | 一种半导体器件及其制备方法、电子装置 | |
| WO2019138803A1 (ja) | キャパシタ及びスナバ回路 | |
| Tan et al. | Application of Low-k Liner for Stress and Capacitance Control in Cu-TSV |