FR3052592B1 - Structure pour applications radiofrequences - Google Patents

Structure pour applications radiofrequences Download PDF

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Publication number
FR3052592B1
FR3052592B1 FR1655266A FR1655266A FR3052592B1 FR 3052592 B1 FR3052592 B1 FR 3052592B1 FR 1655266 A FR1655266 A FR 1655266A FR 1655266 A FR1655266 A FR 1655266A FR 3052592 B1 FR3052592 B1 FR 3052592B1
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FR
France
Prior art keywords
radio frequency
frequency applications
applications
radio
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1655266A
Other languages
English (en)
French (fr)
Other versions
FR3052592A1 (fr
Inventor
Eric Desbonnets
Ionut Radu
Oleg Kononchuk
Jean-Pierre Raskin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1655266A priority Critical patent/FR3052592B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to JP2018564318A priority patent/JP7053502B2/ja
Priority to SG10201913097SA priority patent/SG10201913097SA/en
Priority to US16/308,602 priority patent/US10943815B2/en
Priority to EP17742463.7A priority patent/EP3469627B1/fr
Priority to PCT/FR2017/051418 priority patent/WO2017212160A1/fr
Priority to KR1020187034754A priority patent/KR102369549B1/ko
Priority to SG11201810415PA priority patent/SG11201810415PA/en
Priority to TW106118833A priority patent/TWI733831B/zh
Publication of FR3052592A1 publication Critical patent/FR3052592A1/fr
Application granted granted Critical
Publication of FR3052592B1 publication Critical patent/FR3052592B1/fr
Priority to US17/109,978 priority patent/US11367650B2/en
Priority to US17/663,898 priority patent/US11923239B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Micromachines (AREA)
  • Element Separation (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
FR1655266A 2016-06-08 2016-06-08 Structure pour applications radiofrequences Active FR3052592B1 (fr)

Priority Applications (11)

Application Number Priority Date Filing Date Title
FR1655266A FR3052592B1 (fr) 2016-06-08 2016-06-08 Structure pour applications radiofrequences
SG11201810415PA SG11201810415PA (en) 2016-06-08 2017-06-06 Structure for radiofrequency applications
US16/308,602 US10943815B2 (en) 2016-06-08 2017-06-06 Structure for radiofrequency applications
EP17742463.7A EP3469627B1 (fr) 2016-06-08 2017-06-06 Structure pour applications radiofrequences
PCT/FR2017/051418 WO2017212160A1 (fr) 2016-06-08 2017-06-06 Structure pour applications radiofrequences
KR1020187034754A KR102369549B1 (ko) 2016-06-08 2017-06-06 무선 주파수 애플리케이션들을 위한 구조
JP2018564318A JP7053502B2 (ja) 2016-06-08 2017-06-06 無線周波数用途のための構造
SG10201913097SA SG10201913097SA (en) 2016-06-08 2017-06-06 Structure for radiofrequency applications
TW106118833A TWI733831B (zh) 2016-06-08 2017-06-07 用於射頻應用之結構
US17/109,978 US11367650B2 (en) 2016-06-08 2020-12-02 Structures for radiofrequency applications and related methods
US17/663,898 US11923239B2 (en) 2016-06-08 2022-05-18 Structures for radiofrequency applications and related methods

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1655266A FR3052592B1 (fr) 2016-06-08 2016-06-08 Structure pour applications radiofrequences
FR1655266 2016-06-08

Publications (2)

Publication Number Publication Date
FR3052592A1 FR3052592A1 (fr) 2017-12-15
FR3052592B1 true FR3052592B1 (fr) 2018-05-18

Family

ID=56511794

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1655266A Active FR3052592B1 (fr) 2016-06-08 2016-06-08 Structure pour applications radiofrequences

Country Status (8)

Country Link
US (3) US10943815B2 (enExample)
EP (1) EP3469627B1 (enExample)
JP (1) JP7053502B2 (enExample)
KR (1) KR102369549B1 (enExample)
FR (1) FR3052592B1 (enExample)
SG (2) SG10201913097SA (enExample)
TW (1) TWI733831B (enExample)
WO (1) WO2017212160A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3052592B1 (fr) * 2016-06-08 2018-05-18 Soitec Structure pour applications radiofrequences
FR3062517B1 (fr) * 2017-02-02 2019-03-15 Soitec Structure pour application radiofrequence
CN110828962B (zh) 2018-08-09 2021-08-03 财团法人工业技术研究院 天线阵列模块及其制造方法
US10658474B2 (en) * 2018-08-14 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming thin semiconductor-on-insulator (SOI) substrates
FR3086096B1 (fr) * 2018-09-14 2021-08-27 Soitec Silicon On Insulator Procede de realisation d'un substrat avance pour une integration hybride
US11661337B2 (en) * 2020-10-19 2023-05-30 Taiwan Semiconductor Manufacturing Company, Ltd. Comb electrode release process for MEMS structure
US11658206B2 (en) * 2020-11-13 2023-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Deep trench structure for a capacitive device
US20220406649A1 (en) * 2021-06-22 2022-12-22 Texas Instruments Incorporated Passive component q factor enhancement with elevated resistance region of substrate
FR3126541B1 (fr) 2021-09-02 2025-01-10 Commissariat Energie Atomique Procédé de fabrication d’une structure multicouche
FR3134478B1 (fr) * 2022-04-06 2025-07-25 Commissariat Energie Atomique Substrat comprenant des vias et procédés de fabrication associés
FR3142289A1 (fr) * 2022-11-23 2024-05-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de fabrication d’un empilement comprenant une couche isolante
CN116902904A (zh) * 2023-07-14 2023-10-20 绍兴中芯集成电路制造股份有限公司 一种mems器件、mems器件的制备方法和电子装置

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JP3582890B2 (ja) * 1995-05-23 2004-10-27 株式会社日立製作所 半導体装置
US6312568B2 (en) * 1999-12-07 2001-11-06 Applied Materials, Inc. Two-step AIN-PVD for improved film properties
KR100388011B1 (ko) * 2000-01-17 2003-06-18 삼성전기주식회사 ＧａＮ박막 ＳＡＷ필터 및 이를 제조하는 방법
US6391792B1 (en) * 2000-05-18 2002-05-21 Taiwan Semiconductor Manufacturing Co., Ltd Multi-step chemical mechanical polish (CMP) planarizing method for forming patterned planarized aperture fill layer
US20090179027A1 (en) * 2007-12-29 2009-07-16 Saint-Gobain Ceramics & Plastics, Inc. Coaxial ceramic igniter and methods of fabrication
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US8492868B2 (en) * 2010-08-02 2013-07-23 International Business Machines Corporation Method, apparatus, and design structure for silicon-on-insulator high-bandwidth circuitry with reduced charge layer
CN102169552A (zh) 2011-01-28 2011-08-31 上海集成电路研发中心有限公司 射频识别标签及其制造方法
US9070585B2 (en) * 2012-02-24 2015-06-30 Semiconductor Components Industries, Llc Electronic device including a trench and a conductive structure therein and a process of forming the same
CN103022054B (zh) * 2012-12-21 2016-12-28 上海华虹宏力半导体制造有限公司 绝缘体上硅射频器件及绝缘体上硅衬底
CN103077949B (zh) * 2013-01-28 2016-09-14 上海华虹宏力半导体制造有限公司 绝缘体上硅射频器件及其制作方法
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FR3052592B1 (fr) * 2016-06-08 2018-05-18 Soitec Structure pour applications radiofrequences

Also Published As

Publication number Publication date
US11923239B2 (en) 2024-03-05
SG11201810415PA (en) 2018-12-28
JP7053502B2 (ja) 2022-04-12
TWI733831B (zh) 2021-07-21
EP3469627A1 (fr) 2019-04-17
US20190157137A1 (en) 2019-05-23
JP2019527925A (ja) 2019-10-03
US20210143053A1 (en) 2021-05-13
TW201806175A (zh) 2018-02-16
WO2017212160A1 (fr) 2017-12-14
EP3469627B1 (fr) 2020-07-29
US10943815B2 (en) 2021-03-09
US11367650B2 (en) 2022-06-21
KR20190017762A (ko) 2019-02-20
FR3052592A1 (fr) 2017-12-15
KR102369549B1 (ko) 2022-03-04
SG10201913097SA (en) 2020-02-27
US20220277988A1 (en) 2022-09-01

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