JP2019527468A5 - - Google Patents

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Publication number
JP2019527468A5
JP2019527468A5 JP2018567886A JP2018567886A JP2019527468A5 JP 2019527468 A5 JP2019527468 A5 JP 2019527468A5 JP 2018567886 A JP2018567886 A JP 2018567886A JP 2018567886 A JP2018567886 A JP 2018567886A JP 2019527468 A5 JP2019527468 A5 JP 2019527468A5
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JP
Japan
Prior art keywords
polishing composition
compounds
cobalt
oxidizing agent
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2018567886A
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English (en)
Japanese (ja)
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JP7253924B2 (ja
JP2019527468A (ja
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Priority claimed from PCT/US2017/041988 external-priority patent/WO2018013847A1/en
Publication of JP2019527468A publication Critical patent/JP2019527468A/ja
Publication of JP2019527468A5 publication Critical patent/JP2019527468A5/ja
Priority to JP2022064299A priority Critical patent/JP2022097502A/ja
Application granted granted Critical
Publication of JP7253924B2 publication Critical patent/JP7253924B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2018567886A 2016-07-14 2017-07-13 コバルトcmp用の代替的な酸化剤 Active JP7253924B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022064299A JP2022097502A (ja) 2016-07-14 2022-04-08 コバルトcmp用の代替的な酸化剤

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662362222P 2016-07-14 2016-07-14
US62/362,222 2016-07-14
PCT/US2017/041988 WO2018013847A1 (en) 2016-07-14 2017-07-13 Alternative oxidizing agents for cobalt cmp

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022064299A Division JP2022097502A (ja) 2016-07-14 2022-04-08 コバルトcmp用の代替的な酸化剤

Publications (3)

Publication Number Publication Date
JP2019527468A JP2019527468A (ja) 2019-09-26
JP2019527468A5 true JP2019527468A5 (https=) 2020-08-06
JP7253924B2 JP7253924B2 (ja) 2023-04-07

Family

ID=60942463

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2018567886A Active JP7253924B2 (ja) 2016-07-14 2017-07-13 コバルトcmp用の代替的な酸化剤
JP2022064299A Withdrawn JP2022097502A (ja) 2016-07-14 2022-04-08 コバルトcmp用の代替的な酸化剤

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2022064299A Withdrawn JP2022097502A (ja) 2016-07-14 2022-04-08 コバルトcmp用の代替的な酸化剤

Country Status (7)

Country Link
US (1) US11851584B2 (https=)
EP (1) EP3484971B1 (https=)
JP (2) JP7253924B2 (https=)
KR (3) KR20190018751A (https=)
CN (1) CN109415599B (https=)
TW (1) TWI660017B (https=)
WO (1) WO2018013847A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020066786A1 (ja) * 2018-09-28 2020-04-02 花王株式会社 酸化珪素膜用研磨液組成物
JP7326048B2 (ja) * 2018-09-28 2023-08-15 花王株式会社 酸化珪素膜用研磨液組成物
EP4045226B1 (en) * 2019-10-15 2024-01-03 FUJIFILM Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
JP7803675B2 (ja) * 2020-10-05 2026-01-21 花王株式会社 酸化珪素膜用研磨液組成物

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
JP3507628B2 (ja) * 1996-08-06 2004-03-15 昭和電工株式会社 化学的機械研磨用研磨組成物
MY144587A (en) * 2001-06-21 2011-10-14 Kao Corp Polishing composition
US7029373B2 (en) 2001-08-14 2006-04-18 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6692546B2 (en) 2001-08-14 2004-02-17 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
IL154782A0 (en) * 2003-03-06 2003-10-31 J G Systems Inc Chemical-mechanical polishing composition containing organic nitro compounds
US7736405B2 (en) 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
JP2005056879A (ja) 2003-08-01 2005-03-03 Tosoh Corp 銅系金属用研磨液及び研磨方法
KR101332302B1 (ko) 2005-06-06 2013-11-25 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 단일 플래튼 처리를 위한 방법 및 일체형 화학적 기계적연마 조성물
KR20080033514A (ko) 2005-08-05 2008-04-16 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 금속막 평탄화를 위한 고 처리량의 화학적 기계적 연마조성물
WO2007044446A1 (en) * 2005-10-05 2007-04-19 Advanced Technology Materials, Inc. Oxidizing aqueous cleaner for the removal of post-etch residues
US7732393B2 (en) 2006-03-20 2010-06-08 Cabot Microelectronics Corporation Oxidation-stabilized CMP compositions and methods
JP5646996B2 (ja) 2007-09-21 2014-12-24 キャボット マイクロエレクトロニクス コーポレイション 研磨組成物およびアミノシランを用いて処理された研削剤粒子の使用方法
KR102105381B1 (ko) 2012-02-15 2020-04-29 엔테그리스, 아이엔씨. 조성물을 이용한 cmp-후 제거 방법 및 그의 이용 방법
US8999193B2 (en) * 2012-05-10 2015-04-07 Air Products And Chemicals, Inc. Chemical mechanical polishing composition having chemical additives and methods for using same
US10217645B2 (en) 2014-07-25 2019-02-26 Versum Materials Us, Llc Chemical mechanical polishing (CMP) of cobalt-containing substrate
US9735030B2 (en) * 2014-09-05 2017-08-15 Fujifilm Planar Solutions, LLC Polishing compositions and methods for polishing cobalt films
US9688885B2 (en) 2014-10-21 2017-06-27 Cabot Microelectronics Corporation Cobalt polishing accelerators
US9944828B2 (en) * 2014-10-21 2018-04-17 Cabot Microelectronics Corporation Slurry for chemical mechanical polishing of cobalt
CN107075310B (zh) 2014-10-21 2019-04-02 嘉柏微电子材料股份公司 钴凹陷控制剂
WO2016065057A1 (en) 2014-10-21 2016-04-28 Cabot Microelectronics Corporation Corrosion inhibitors and related compositions and methods
US9978609B2 (en) * 2015-04-27 2018-05-22 Versum Materials Us, Llc Low dishing copper chemical mechanical planarization
US9528030B1 (en) * 2015-10-21 2016-12-27 Cabot Microelectronics Corporation Cobalt inhibitor combination for improved dishing

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