JP7253924B2 - コバルトｃｍｐ用の代替的な酸化剤 - Google Patents

コバルトｃｍｐ用の代替的な酸化剤 Download PDF

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Publication number
JP7253924B2
JP7253924B2 JP2018567886A JP2018567886A JP7253924B2 JP 7253924 B2 JP7253924 B2 JP 7253924B2 JP 2018567886 A JP2018567886 A JP 2018567886A JP 2018567886 A JP2018567886 A JP 2018567886A JP 7253924 B2 JP7253924 B2 JP 7253924B2
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Japan
Prior art keywords
polishing composition
cobalt
compounds
polishing
oxidizing agent
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JP2018567886A
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English (en)
Japanese (ja)
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JP2019527468A5 (https=
JP2019527468A (ja
Inventor
クラフト スティーブン
ダブリュ． カーター フィリップ
アール． ウォルフ アンドリュー
Original Assignee
シーエムシー マテリアルズ，インコーポレイティド
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Publication of JP2019527468A publication Critical patent/JP2019527468A/ja
Publication of JP2019527468A5 publication Critical patent/JP2019527468A5/ja
Priority to JP2022064299A priority Critical patent/JP2022097502A/ja
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2018567886A 2016-07-14 2017-07-13 コバルトｃｍｐ用の代替的な酸化剤 Active JP7253924B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022064299A JP2022097502A (ja) 2016-07-14 2022-04-08 コバルトｃｍｐ用の代替的な酸化剤

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662362222P 2016-07-14 2016-07-14
US62/362,222 2016-07-14
PCT/US2017/041988 WO2018013847A1 (en) 2016-07-14 2017-07-13 Alternative oxidizing agents for cobalt cmp

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022064299A Division JP2022097502A (ja) 2016-07-14 2022-04-08 コバルトｃｍｐ用の代替的な酸化剤

Publications (3)

Publication Number Publication Date
JP2019527468A JP2019527468A (ja) 2019-09-26
JP2019527468A5 JP2019527468A5 (https=) 2020-08-06
JP7253924B2 true JP7253924B2 (ja) 2023-04-07

Family

ID=60942463

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2018567886A Active JP7253924B2 (ja) 2016-07-14 2017-07-13 コバルトｃｍｐ用の代替的な酸化剤
JP2022064299A Withdrawn JP2022097502A (ja) 2016-07-14 2022-04-08 コバルトｃｍｐ用の代替的な酸化剤

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2022064299A Withdrawn JP2022097502A (ja) 2016-07-14 2022-04-08 コバルトｃｍｐ用の代替的な酸化剤

Country Status (7)

Country Link
US (1) US11851584B2 (https=)
EP (1) EP3484971B1 (https=)
JP (2) JP7253924B2 (https=)
KR (3) KR20190018751A (https=)
CN (1) CN109415599B (https=)
TW (1) TWI660017B (https=)
WO (1) WO2018013847A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020066786A1 (ja) * 2018-09-28 2020-04-02 花王株式会社 酸化珪素膜用研磨液組成物
JP7326048B2 (ja) * 2018-09-28 2023-08-15 花王株式会社 酸化珪素膜用研磨液組成物
EP4045226B1 (en) * 2019-10-15 2024-01-03 FUJIFILM Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
JP7803675B2 (ja) * 2020-10-05 2026-01-21 花王株式会社 酸化珪素膜用研磨液組成物

Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2010541204A (ja) 2007-09-21 2010-12-24 キャボット マイクロエレクトロニクス コーポレイション 研磨組成物およびアミノシランを用いて処理された研削剤粒子の使用方法
JP2015512971A (ja) 2012-02-15 2015-04-30 インテグリス，インコーポレイテッド 組成物を使用したｃｍｐ後除去及び使用方法

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US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
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KR20080033514A (ko) 2005-08-05 2008-04-16 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 금속막 평탄화를 위한 고 처리량의 화학적 기계적 연마조성물
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JP2010541204A (ja) 2007-09-21 2010-12-24 キャボット マイクロエレクトロニクス コーポレイション 研磨組成物およびアミノシランを用いて処理された研削剤粒子の使用方法
JP2015512971A (ja) 2012-02-15 2015-04-30 インテグリス，インコーポレイテッド 組成物を使用したｃｍｐ後除去及び使用方法

Also Published As

Publication number Publication date
EP3484971A4 (en) 2020-02-26
TWI660017B (zh) 2019-05-21
CN109415599B (zh) 2022-09-27
KR20230014887A (ko) 2023-01-30
TW201807119A (zh) 2018-03-01
KR20250005498A (ko) 2025-01-09
US11851584B2 (en) 2023-12-26
US20180016469A1 (en) 2018-01-18
JP2022097502A (ja) 2022-06-30
EP3484971A1 (en) 2019-05-22
CN109415599A (zh) 2019-03-01
EP3484971B1 (en) 2025-08-27
WO2018013847A1 (en) 2018-01-18
KR20190018751A (ko) 2019-02-25
JP2019527468A (ja) 2019-09-26

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