CN109415599B - 用于钴化学机械抛光的替代性氧化剂 - Google Patents
用于钴化学机械抛光的替代性氧化剂 Download PDFInfo
- Publication number
- CN109415599B CN109415599B CN201780041554.8A CN201780041554A CN109415599B CN 109415599 B CN109415599 B CN 109415599B CN 201780041554 A CN201780041554 A CN 201780041554A CN 109415599 B CN109415599 B CN 109415599B
- Authority
- CN
- China
- Prior art keywords
- polishing composition
- cobalt
- polishing
- substrate
- oxidizing agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662362222P | 2016-07-14 | 2016-07-14 | |
| US62/362,222 | 2016-07-14 | ||
| PCT/US2017/041988 WO2018013847A1 (en) | 2016-07-14 | 2017-07-13 | Alternative oxidizing agents for cobalt cmp |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109415599A CN109415599A (zh) | 2019-03-01 |
| CN109415599B true CN109415599B (zh) | 2022-09-27 |
Family
ID=60942463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780041554.8A Active CN109415599B (zh) | 2016-07-14 | 2017-07-13 | 用于钴化学机械抛光的替代性氧化剂 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11851584B2 (https=) |
| EP (1) | EP3484971B1 (https=) |
| JP (2) | JP7253924B2 (https=) |
| KR (3) | KR20190018751A (https=) |
| CN (1) | CN109415599B (https=) |
| TW (1) | TWI660017B (https=) |
| WO (1) | WO2018013847A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020066786A1 (ja) * | 2018-09-28 | 2020-04-02 | 花王株式会社 | 酸化珪素膜用研磨液組成物 |
| JP7326048B2 (ja) * | 2018-09-28 | 2023-08-15 | 花王株式会社 | 酸化珪素膜用研磨液組成物 |
| EP4045226B1 (en) * | 2019-10-15 | 2024-01-03 | FUJIFILM Electronic Materials U.S.A., Inc. | Polishing compositions and methods of use thereof |
| JP7803675B2 (ja) * | 2020-10-05 | 2026-01-21 | 花王株式会社 | 酸化珪素膜用研磨液組成物 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101366107B (zh) * | 2005-10-05 | 2011-08-24 | 高级技术材料公司 | 用于除去蚀刻后残余物的含水氧化清洗剂 |
| CN104508072A (zh) * | 2012-02-15 | 2015-04-08 | 安格斯公司 | 用于cmp后去除的组合物及使用方法 |
| WO2016065060A1 (en) * | 2014-10-21 | 2016-04-28 | Cabot Microelectronics Corporation | Cobalt polishing accelerators |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
| US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| JP3507628B2 (ja) * | 1996-08-06 | 2004-03-15 | 昭和電工株式会社 | 化学的機械研磨用研磨組成物 |
| MY144587A (en) * | 2001-06-21 | 2011-10-14 | Kao Corp | Polishing composition |
| US7029373B2 (en) | 2001-08-14 | 2006-04-18 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for metal and associated materials and method of using same |
| US6692546B2 (en) | 2001-08-14 | 2004-02-17 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for metal and associated materials and method of using same |
| IL154782A0 (en) * | 2003-03-06 | 2003-10-31 | J G Systems Inc | Chemical-mechanical polishing composition containing organic nitro compounds |
| US7736405B2 (en) | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
| JP2005056879A (ja) | 2003-08-01 | 2005-03-03 | Tosoh Corp | 銅系金属用研磨液及び研磨方法 |
| KR101332302B1 (ko) | 2005-06-06 | 2013-11-25 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 단일 플래튼 처리를 위한 방법 및 일체형 화학적 기계적연마 조성물 |
| KR20080033514A (ko) | 2005-08-05 | 2008-04-16 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 금속막 평탄화를 위한 고 처리량의 화학적 기계적 연마조성물 |
| US7732393B2 (en) | 2006-03-20 | 2010-06-08 | Cabot Microelectronics Corporation | Oxidation-stabilized CMP compositions and methods |
| JP5646996B2 (ja) | 2007-09-21 | 2014-12-24 | キャボット マイクロエレクトロニクス コーポレイション | 研磨組成物およびアミノシランを用いて処理された研削剤粒子の使用方法 |
| US8999193B2 (en) * | 2012-05-10 | 2015-04-07 | Air Products And Chemicals, Inc. | Chemical mechanical polishing composition having chemical additives and methods for using same |
| US10217645B2 (en) | 2014-07-25 | 2019-02-26 | Versum Materials Us, Llc | Chemical mechanical polishing (CMP) of cobalt-containing substrate |
| US9735030B2 (en) * | 2014-09-05 | 2017-08-15 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for polishing cobalt films |
| US9944828B2 (en) * | 2014-10-21 | 2018-04-17 | Cabot Microelectronics Corporation | Slurry for chemical mechanical polishing of cobalt |
| CN107075310B (zh) | 2014-10-21 | 2019-04-02 | 嘉柏微电子材料股份公司 | 钴凹陷控制剂 |
| WO2016065057A1 (en) | 2014-10-21 | 2016-04-28 | Cabot Microelectronics Corporation | Corrosion inhibitors and related compositions and methods |
| US9978609B2 (en) * | 2015-04-27 | 2018-05-22 | Versum Materials Us, Llc | Low dishing copper chemical mechanical planarization |
| US9528030B1 (en) * | 2015-10-21 | 2016-12-27 | Cabot Microelectronics Corporation | Cobalt inhibitor combination for improved dishing |
-
2017
- 2017-07-12 TW TW106123275A patent/TWI660017B/zh active
- 2017-07-13 KR KR1020197004126A patent/KR20190018751A/ko not_active Ceased
- 2017-07-13 US US15/649,378 patent/US11851584B2/en active Active
- 2017-07-13 WO PCT/US2017/041988 patent/WO2018013847A1/en not_active Ceased
- 2017-07-13 EP EP17828487.3A patent/EP3484971B1/en active Active
- 2017-07-13 KR KR1020237002200A patent/KR20230014887A/ko not_active Ceased
- 2017-07-13 CN CN201780041554.8A patent/CN109415599B/zh active Active
- 2017-07-13 JP JP2018567886A patent/JP7253924B2/ja active Active
- 2017-07-13 KR KR1020247040827A patent/KR20250005498A/ko active Pending
-
2022
- 2022-04-08 JP JP2022064299A patent/JP2022097502A/ja not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101366107B (zh) * | 2005-10-05 | 2011-08-24 | 高级技术材料公司 | 用于除去蚀刻后残余物的含水氧化清洗剂 |
| CN104508072A (zh) * | 2012-02-15 | 2015-04-08 | 安格斯公司 | 用于cmp后去除的组合物及使用方法 |
| WO2016065060A1 (en) * | 2014-10-21 | 2016-04-28 | Cabot Microelectronics Corporation | Cobalt polishing accelerators |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3484971A4 (en) | 2020-02-26 |
| TWI660017B (zh) | 2019-05-21 |
| KR20230014887A (ko) | 2023-01-30 |
| TW201807119A (zh) | 2018-03-01 |
| KR20250005498A (ko) | 2025-01-09 |
| JP7253924B2 (ja) | 2023-04-07 |
| US11851584B2 (en) | 2023-12-26 |
| US20180016469A1 (en) | 2018-01-18 |
| JP2022097502A (ja) | 2022-06-30 |
| EP3484971A1 (en) | 2019-05-22 |
| CN109415599A (zh) | 2019-03-01 |
| EP3484971B1 (en) | 2025-08-27 |
| WO2018013847A1 (en) | 2018-01-18 |
| KR20190018751A (ko) | 2019-02-25 |
| JP2019527468A (ja) | 2019-09-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9850403B2 (en) | Cobalt polishing accelerators | |
| CN108350317B (zh) | 用于改善凹陷的钴抑制剂组合 | |
| EP3210237B1 (en) | Cobalt dishing control agents | |
| JP2022097502A (ja) | コバルトcmp用の代替的な酸化剤 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: Illinois, USA Applicant after: CMC Materials Co.,Ltd. Address before: Illinois, USA Applicant before: Cabot Microelectronics Corp. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Illinois, America Patentee after: CMC Materials Co.,Ltd. Address before: Illinois, America Patentee before: CMC Materials Co.,Ltd. |