CN104916582B - 加工方法 - Google Patents
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- CN104916582B CN104916582B CN201510106528.1A CN201510106528A CN104916582B CN 104916582 B CN104916582 B CN 104916582B CN 201510106528 A CN201510106528 A CN 201510106528A CN 104916582 B CN104916582 B CN 104916582B
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
本发明提供一种加工方法,能够适当加工包含金属的被加工物的基于简单工序。加工方法利用具有磨削磨石(40b)或研磨垫的加工单元(32)来加工至少在被加工面(11a)上包含金属的被加工物(11),该方法构成为包括加工步骤,在该加工步骤中,对被加工物的被加工面供给加工液(50),并且通过加工单元对被加工物进行磨削或研磨,加工液含氧化剂和有机酸。
Description
技术领域
本发明涉及加工包含金属的被加工物的加工方法。
背景技术
近些年来,基于晶片的状态进行封装的WL-CSP(Wafer Level Chip SizePackage:晶圆级芯片尺寸封装)受到关注。在WL-CSP中,在形成于晶片上的器件的正面侧设置重布线层和金属柱(电极)并用树脂等密封,通过切削等方法分割密封后的晶片(WL-CSP基板)。该WL-CSP的特征在于,所分割的芯片大小即为封装的大小,因此有利于实现小型化。
另外,具有延性的金属等材料在被施加应力时会被塑性拉伸延展,因此通过磨削和研磨等方法无法容易地进行加工。因此,例如在使包含金属的WL-CSP基板等被加工物的密封层侧变薄的情况下,需要通过磨削等方法削去密封层等,然后通过刀具切削等其他方法加工金属(例如,参照专利文献1)。
专利文献1日本特开2013-8898号公报
然而,如果如上所述组合不同的多种方法,则工序会变得繁琐且制造成本变高。
发明内容
本发明就是鉴于上述问题点而完成的,其目的在于提供一种能够适当加工包含金属的被加工物的基于简单工序的加工方法。
本发明提供一种加工方法,利用具有磨削磨石或研磨垫的加工单元来加工至少在被加工面上包含金属的被加工物,其特征在于,该加工方法具有加工步骤,在该加工步骤中,在被加工物的被加工面上供给加工液,并且利用该加工单元对被加工物进行磨削或研磨,该加工液含氧化剂和有机酸。
此外,本发明优选构成为该加工液还含防蚀剂。
在本发明的加工方法中,通过供给包含有机酸和氧化剂的加工液,能够将被加工面所含的金属改质并抑制延性,并且能够磨削或研磨被加工物。因此,能够通过简单工序适当加工包含金属的被加工物。
附图说明
图1是示意性表示在本实施方式的加工方法中使用的磨削装置(加工装置)的结构例的立体图。
图2是示意性表示加工步骤的立体图。
标号说明
2:磨削装置(加工装置);4:基座;4a、4b:开口;6:支撑壁;8:搬运机构;10a、10b:盒;12:定位机构;14:搬入机构;16:X轴移动台;18:防水罩;20:卡盘台;22:Z轴移动机构;24:Z轴导轨;26:Z轴移动台;28:Z轴滚珠丝杠;30:Z轴脉冲电动机;32:磨削机构(加工单元);34:主轴套;36:主轴;38:轮安装器;40:磨削轮;40a:轮基座;40b:磨削磨石;42:喷嘴;44:搬出机构;46:清洗机构;48:操作面板;50:加工液;11:被加工物;11a:正面(被加工面);13:保护部件。
具体实施方式
参照附图,说明本发明的实施方式。另外,在本实施方式中,说明通过具有磨削用的磨石(磨削磨石)的磨削机构(加工单元)磨削板状的被加工物的加工方法,然而本发明的加工方法不限于此。例如,还可以将本发明的加工方法应用于通过具有研磨用垫(研磨垫)的研磨机构(加工单元)研磨板状的被加工物的情况等。
首先,说明在本实施方式的加工方法中使用的磨削装置(加工装置)的结构例。图1是示意性表示本实施方式的磨削装置的结构例的立体图。如图1所示,本实施方式的磨削装置(加工装置)2具有用于搭载各种结构的长方体状的基座4。在基座4的后端竖立设置有向上方延伸的支撑壁6。
在基座4的上表面前侧形成有开口4a,在该开口4a内设有搬运板状的被加工物11的搬运机构8。此外,在开口4a的侧方区域上放置有用于收容被加工物11的盒10a、10b。
被加工物11例如是圆盘状的WL-CSP基板,在作为被加工面的正面11a(参照图2)侧埋设有金属柱(电极)。此外,在本实施方式中,在被加工物11的背面侧贴附有与被加工物11大致直径相同的保护部件13(参照图2)。
其中,被加工物11的结构不限于此。只要是金属板、设置了TSV(Through SiliconVia:硅通孔)的TSV晶片、形成有金属膜的晶片等在被加工面上包含金属的板状物,就能通过本实施方式的加工方法适当进行加工。此外,也可以不在被加工物11的背面侧贴附保护部件13。
在放置盒10a的放置区域的后方设有定位机构12,该定位机构12对暂时放置的被加工物11进行定位。例如,被搬运机构8从盒10a搬运的被加工物11放置于定位机构12且中心被定位。
在定位机构12的后方设有搬入机构14,该搬入机构14吸引保持被加工物11并回旋。在搬入机构14的后方形成有开口4b。在该开口4b内配置有X轴移动台16、使X轴移动台16在X轴方向(前后方向)上移动的X轴移动机构(未图示)以及覆盖X轴移动机构的防水罩18。
X轴移动机构具有平行于X轴方向的一对X轴导轨(未图示),在X轴导轨上以能够滑动的方式设置有X轴移动台16。在X轴移动台16的下表面侧固定有螺母部(未图示),在该螺母部上螺合着平行于X轴导轨的X轴滚珠丝杠(未图示)。
在X轴滚珠丝杠的一端部连结有X轴脉冲电动机(未图示)。通过X轴脉冲电动机使X轴滚珠丝杠旋转,从而X轴移动台16沿着X轴导轨在X轴方向上移动。在X轴移动台16上设有吸引保持被加工物11的卡盘台20。
卡盘台20与电动机等的旋转驱动源(未图示)连结,并且围绕Z轴方向(铅直方向)上延伸的旋转轴进行旋转。此外,卡盘台20通过上述X轴移动机构,而在供被加工物11搬入搬出的前方的搬入搬出位置与磨削被加工物11的后方的磨削位置之间移动。
卡盘台20的上表面的一部分为吸引保持被加工物11的保持面。该保持面通过形成于卡盘台20的内部的流路(未图示)而连接于吸引源(未图示)。被搬入机构14搬入的被加工物11通过作用于保持面上的吸引源的负压而吸引保持于卡盘台20上。
在支撑壁6的前表面设有Z轴移动机构22。Z轴移动机构22具有平行于Z轴方向的一对Z轴导轨24,在该Z轴导轨24上以能够滑动的方式设置有Z轴移动台26。在Z轴移动台26的后表面侧(背面侧)固定有螺母部(未图示),在该螺母部上螺合着平行于Z轴导轨24的Z轴滚珠丝杠28。
在Z轴滚珠丝杠28的一端部连结有Z轴脉冲电动机30。通过Z轴脉冲电动机30使Z轴滚珠丝杠28旋转,从而Z轴移动台26沿着Z轴导轨24在Z轴方向上移动。
在接近Z轴导轨24的位置处附设有Z轴标尺(未图示),该Z轴标尺表示Z轴移动台26在Z轴方向上的位置(高度位置)。Z轴移动台26在Z轴方向上的位置被Z轴移动台26具有的标尺读取机构(未图示)读取。
在Z轴移动台26的前表面(正面)上设有磨削被加工物11的磨削机构(加工单元)32。磨削机构32具有固定于Z轴移动台26上的主轴套34。在主轴套34上支撑着主轴36,该主轴36能够绕Z轴方向上延伸的旋转轴进行旋转。
在主轴36的下端部固定有圆盘状的轮安装器38,在轮安装器38的下表面安装有与轮安装器38大致直径相同的磨削轮40。磨削轮40具有由不锈钢等金属材料形成的圆盘状的轮基座40a。在轮基座40a的下表面的整个周面上固定有多个磨削磨石40b。
在主轴36的上端侧连结有电动机等的旋转驱动源(未图示),磨削轮40凭借从旋转驱动源传递的旋转力而旋转。此外,磨削轮40被上述Z轴移动机构22压靠在吸引保持于卡盘台20上的被加工物11的正面11a。
在与磨削机构32相邻的位置处设有喷嘴42,该喷嘴42对被加工物11的正面11a供给加工液50(参照图2)。该喷嘴42与加工液供给源(未图示)连接。在供给加工液50的同时,接触旋转的磨削轮40(磨削磨石40b),从而适当磨削(加工)包含金属的被加工物11的正面11a侧。后面叙述加工液50的详细内容。
在Y轴方向(左右方向)上与搬入机构14相邻的位置处设有搬出机构44,该搬出机构44吸引保持被加工物11并进行回旋。在搬出机构44的前方、且为放置有盒10b的放置区域的后方配置有清洗磨削后的被加工物11的清洗机构46。
通过清洗机构46清洗后的被加工物11被搬运机构8搬运,且收容于盒10b中。在开口4a的前方设有操作面板48,该操作面板48用于输入卡盘台20和主轴36的转速、磨削轮40的下降速度、加工液50的供给量等的磨削条件。
接着,说明使用上述磨削装置2的加工方法。首先,实施将被加工物11保持于卡盘台20上的保持步骤。在该保持步骤中,使固定于被加工物11的背面侧的保护部件13接触卡盘台20的保持面,并使吸引源的负压产生作用。由此,被加工物11通过保护部件13而吸引保持于卡盘台20。
在保持步骤之后,实施加工被加工物11的加工步骤。图2是示意性表示加工步骤的立体图。在加工步骤中,使卡盘台20和主轴36进行旋转,并使磨削轮40下降,使磨削磨石40b接触被加工物11的正面11a。与此同时,从喷嘴42对被加工物11的正面11a供给加工液50。
本实施方式的加工方法使用含氧化剂和有机酸的加工液50。通过该加工液50,将被加工物11的正面11a包含的金属改质并抑制其延性,并且能够磨削被加工物11。因此,该磨削不会使金属产生翘曲(突起物)。此外,仅凭该磨削就能够适当加工包含金属的被加工物11,因此无需组合其他方法。
作为有机酸,例如可使用在分子内具有至少1个羧基和至少1个氨基的化合物。这种情况下,优选至少1个氨基为二级或三级的氨基。此外,作为有机酸使用的化合物可以具有置换基。
作为可用作有机酸的氨基酸,可以举出甘氨酸、二羟基乙基甘氨酸、双甘氨肽、羟基乙基甘氨酸、N-甲基甘氨酸、β-丙氨酸、L-丙氨酸、L-2-氨基丁酸、L-正缬氨酸、L-缬氨酸、L-亮氨酸、L-正亮氨酸、L-别异亮氨酸、L-异亮氨酸、L-苯基丙氨酸、L-脯氨酸、肌氨酸、L-鸟氨酸、L-赖氨酸、牛磺酸、L-丝氨酸、L-苏氨酸、L-别苏氨酸、L-高丝氨酸、L-甲状腺素、L-酪氨酸、3,5-二碘-L-酪氨酸、β-(3,4-二羟基苯基)-L-丙氨酸、4-羟基-L-脯氨酸、L-半胱氨酸、L-甲硫氨酸、L-乙基硫氨酸、L-羊毛硫氨酸、L-胱硫醚、L-胱氨酸、L-半胱氨酸、L-谷氨酸、L-天冬氨酸、S-(羧甲基)-L-半胱氨酸、4-氨基丁酸、L-天冬酰胺、L-谷酰胺、氮杂丝氨酸、L-刀豆氨酸、L-瓜氨酸、L-精氨酸、δ-羟基-L-赖氨酸、甲胍基乙酸、L-犬尿氨素、L-组氨酸、1-甲基-L-组氨酸、3-甲基-L-组氨酸、L-色氨酸、放线菌素C1、麦角硫因、蜜蜂神经毒素、血管紧张素I、血管紧张素II和抗痛素等。其中,优选使用甘氨酸、L-丙氨酸、L-脯氨酸、L-组氨酸、L-赖氨酸、二羟基乙基甘氨酸。
此外,作为可用作有机酸的氨基聚酸,可举出亚氨基二乙酸、次氮基三乙酸、二亚乙基三胺五乙酸、乙二胺四乙酸、羟基乙基亚氨基二乙酸、次氮基三亚甲基膦酸、乙二胺-N、N、N’、N’-四亚甲基磺酸、1、2-二氨基丙烷四乙酸、乙二醇醚二胺四乙酸、反式环己烷二胺四乙酸、乙二胺邻羟基苯基乙酸、乙二胺二琥珀酸(SS体)、β-氨基丙酸、N-(2-羧基盐乙基)-L-天冬氨酸、N、N’-双(2-羟基苄基)乙二胺-N、N’-二乙酸等。
进而,作为可用作有机酸的碳酸,可举出甲酸、乙醇酸、丙酸、乙酸、丁酸、吉药酸、己酸、草酸、丙二酸、戊二酸、己二酸、苹果酸、琥珀酸、庚二酸、巯基乙酸、乙醛酸、氯乙酸、乙酰甲酸、乙酰乙酸、戊二酸等的饱和羧酸、丙烯酸、甲基丙烯酸、丁烯酸、富马酸、马来酸、中康酸、柠康酸、乌头酸等的不饱和羧酸、苯甲酸类、甲基苯甲酸、邻苯二甲酸类、萘甲酸类、均苯四甲酸、萘二酸等的环状不饱和羧酸等。
作为氧化剂,例如可使用过氧化氢、过氧化物、硝酸盐、碘酸盐、高碘酸盐、次氯酸盐、亚氯酸盐、氯酸盐、高氯酸盐、过硫酸盐、重铬酸盐、高锰酸盐、铈酸盐、钒酸盐、臭氧水和银(II)盐、铁(III)盐及其有机错盐等。
此外,在加工液50中可以混合防蚀剂。通过混合防蚀剂,从而能够防止被加工物11包含的金属的腐蚀(溶出)。作为防蚀剂,例如优选使用在分子内具有3个以上氮原子、且具有稠环结构的芳杂环化合物,或使用在分子内具有4个以上氮原子的芳杂环化合物。进而,芳杂环化合物优选含有羧基、磺基、羟基、烷氧基。具体而言,优选为四唑环衍生物、1、2、3-三唑衍生物以及1、2、4-三唑衍生物。
作为可用作防蚀剂的四唑环衍生物,可举出在形成四唑环的氮原子上不具有置换基、且在四唑环的5位上导入了被置换基取代的烷基的结构,其中该置换基是从由磺基、氨基、氨基甲酰基、香芹酮酰胺基、氨磺酰基和磺酰胺基构成的群中选择的置换基,或从由羟基、羧基、磺基、氨基、氨基甲酰基、香芹酮酰胺基、氨磺酰基和磺酰胺基构成的群中选择的至少1个置换基。
此外,作为可用作防蚀剂的1、2、3-三唑衍生物,可举出在形成1、2、3-三唑环的氮原子上不具有置换基、且在1、2、3-三唑的4位和/或5位上导入了被置换基取代的烷基或芳基的结构,其中该置换基是从由羟基、羧基、磺基、氨基、氨基甲酰基、香芹酮酰胺基、氨磺酰基和磺酰胺基构成的群中选择的置换基,或从由羟基、羧基、磺基、氨基、氨基甲酰基、香芹酮酰胺基、氨磺酰基和磺酰胺基构成的群中选择的至少1个置换基。
此外,作为可用作防蚀剂的1、2、4-三唑衍生物,可举出在形成1、2、4-三唑环的氮原子上不具有置换基、且在1、2、4-三唑的2位和/或5位上导入了被置换基取代的烷基或芳基的结构,其中该置换基是从由磺基、氨基甲酰基、香芹酮酰胺基、氨磺酰基和磺酰胺基构成的群中选择的置换基,或从由羟基、羧基、磺基、氨基、氨基甲酰基、香芹酮酰胺基、氨磺酰基以及磺酰胺基构成的群中选择的至少1个置换基。
在本实施方式的加工方法中,主轴36的转速例如被设定为6000rpm,卡盘台20的转速例如被设定为300rpm。其中,主轴36和卡盘台20的转速不限于此,可任意变更。
在上述条件下,如果使主轴14以规定的进给速度下降,则能够磨削被加工物11的正面11a。该磨削是在通过接触式或非接触式的厚度测定传感器测定被加工物11的厚度的同时实施的。在被加工物11成为规定厚度时,加工步骤结束。
如上,在本实施方式的加工方法中,通过供给包含有机酸和氧化剂的加工液50,从而能够将正面(被加工面)11a的金属改质并抑制其延性,并且能够磨削(或研磨)被加工物11。因此,能够通过简单的工序适当加工包含金属的被加工物11。
另外,本发明不限于上述实施方式的描述,可以进行各种变更并实施。例如,加工液50不必限于上述结构。作为有机酸,可以使用其他的氨基酸、氨基聚酸、羧酸等。此外,作为防蚀剂,可以使用其他的唑化合物(四唑环、三唑、苯并三唑等)。
此外,上述实施方式的结构、方法等可以在不脱离本发明目的的范围内适当变更并实施。
Claims (2)
1.一种加工方法,利用包含安装有磨削磨石的主轴的加工单元,来加工至少在被加工面上包含可由于磨削而产生翘曲的金属的被加工物,该加工方法的特征在于,
该加工方法具有加工步骤,在该加工步骤中,在被加工物的被加工面上供给加工液并且使该主轴和被加工物旋转,使该主轴以规定的进给速度下降并使该磨削磨石与被加工物的该被加工面的一部分接触,从而对被加工物进行磨削,
该加工液含氧化剂和有机酸,通过将该金属改质而抑制延性,从而抑制该金属产生该翘曲并对被加工物进行磨削。
2.根据权利要求1所述的加工方法,其特征在于,
该加工液还含防蚀剂。
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