JP2019522104A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2019522104A5 JP2019522104A5 JP2018503240A JP2018503240A JP2019522104A5 JP 2019522104 A5 JP2019522104 A5 JP 2019522104A5 JP 2018503240 A JP2018503240 A JP 2018503240A JP 2018503240 A JP2018503240 A JP 2018503240A JP 2019522104 A5 JP2019522104 A5 JP 2019522104A5
- Authority
- JP
- Japan
- Prior art keywords
- precursor
- group
- layer
- zirconium
- tris
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002243 precursor Substances 0.000 claims 27
- 238000000034 method Methods 0.000 claims 21
- 230000004888 barrier function Effects 0.000 claims 20
- 230000003628 erosive effect Effects 0.000 claims 19
- 238000009792 diffusion process Methods 0.000 claims 18
- 238000000231 atomic layer deposition Methods 0.000 claims 12
- 238000005229 chemical vapour deposition Methods 0.000 claims 12
- 239000007983 Tris buffer Substances 0.000 claims 9
- 239000011248 coating agent Substances 0.000 claims 7
- 238000000576 coating method Methods 0.000 claims 7
- 230000002265 prevention Effects 0.000 claims 7
- 238000000151 deposition Methods 0.000 claims 6
- 229910008651 TiZr Inorganic materials 0.000 claims 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 4
- 125000003368 amide group Chemical group 0.000 claims 4
- PCOPFSXTYFFNIG-UHFFFAOYSA-N butan-1-olate;yttrium(3+) Chemical compound [Y+3].CCCC[O-].CCCC[O-].CCCC[O-] PCOPFSXTYFFNIG-UHFFFAOYSA-N 0.000 claims 4
- OLQIFTSPAVIXCQ-UHFFFAOYSA-N cyclopenta-1,3-diene;yttrium(3+) Chemical compound [Y+3].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 OLQIFTSPAVIXCQ-UHFFFAOYSA-N 0.000 claims 4
- 238000005137 deposition process Methods 0.000 claims 4
- 238000005240 physical vapour deposition Methods 0.000 claims 4
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical group OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 claims 4
- 229910052727 yttrium Inorganic materials 0.000 claims 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 4
- BGGIUGXMWNKMCP-UHFFFAOYSA-N 2-methylpropan-2-olate;zirconium(4+) Chemical compound CC(C)(C)O[Zr](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C BGGIUGXMWNKMCP-UHFFFAOYSA-N 0.000 claims 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- PQLAYKMGZDUDLQ-UHFFFAOYSA-K aluminium bromide Chemical compound Br[Al](Br)Br PQLAYKMGZDUDLQ-UHFFFAOYSA-K 0.000 claims 3
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims 3
- GOVWJRDDHRBJRW-UHFFFAOYSA-N diethylazanide;zirconium(4+) Chemical compound [Zr+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC GOVWJRDDHRBJRW-UHFFFAOYSA-N 0.000 claims 3
- DWCMDRNGBIZOQL-UHFFFAOYSA-N dimethylazanide;zirconium(4+) Chemical compound [Zr+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C DWCMDRNGBIZOQL-UHFFFAOYSA-N 0.000 claims 3
- GCPCLEKQVMKXJM-UHFFFAOYSA-N ethoxy(diethyl)alumane Chemical group CCO[Al](CC)CC GCPCLEKQVMKXJM-UHFFFAOYSA-N 0.000 claims 3
- SRLSISLWUNZOOB-UHFFFAOYSA-N ethyl(methyl)azanide;zirconium(4+) Chemical compound [Zr+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C SRLSISLWUNZOOB-UHFFFAOYSA-N 0.000 claims 3
- IMKXKRVWMWJAFF-UHFFFAOYSA-N n-bis[ethyl(methyl)amino]alumanyl-n-methylethanamine Chemical compound CCN(C)[Al](N(C)CC)N(C)CC IMKXKRVWMWJAFF-UHFFFAOYSA-N 0.000 claims 3
- 239000010936 titanium Substances 0.000 claims 3
- WOZZOSDBXABUFO-UHFFFAOYSA-N tri(butan-2-yloxy)alumane Chemical compound [Al+3].CCC(C)[O-].CCC(C)[O-].CCC(C)[O-] WOZZOSDBXABUFO-UHFFFAOYSA-N 0.000 claims 3
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 claims 3
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 claims 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims 3
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 claims 3
- LSWWNKUULMMMIL-UHFFFAOYSA-J zirconium(iv) bromide Chemical group Br[Zr](Br)(Br)Br LSWWNKUULMMMIL-UHFFFAOYSA-J 0.000 claims 3
- GRWPYGBKJYICOO-UHFFFAOYSA-N 2-methylpropan-2-olate;titanium(4+) Chemical compound [Ti+4].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-] GRWPYGBKJYICOO-UHFFFAOYSA-N 0.000 claims 2
- 238000000137 annealing Methods 0.000 claims 2
- 238000005336 cracking Methods 0.000 claims 2
- GCIHPQVQNZQGFC-UHFFFAOYSA-N diethylazanide;dimethylazanide;titanium(4+) Chemical compound [Ti+4].C[N-]C.C[N-]C.CC[N-]CC.CC[N-]CC GCIHPQVQNZQGFC-UHFFFAOYSA-N 0.000 claims 2
- VJDVOZLYDLHLSM-UHFFFAOYSA-N diethylazanide;titanium(4+) Chemical compound [Ti+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC VJDVOZLYDLHLSM-UHFFFAOYSA-N 0.000 claims 2
- LNKYFCABELSPAN-UHFFFAOYSA-N ethyl(methyl)azanide;titanium(4+) Chemical compound [Ti+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C LNKYFCABELSPAN-UHFFFAOYSA-N 0.000 claims 2
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 claims 2
- UBZYKBZMAMTNKW-UHFFFAOYSA-J titanium tetrabromide Chemical compound Br[Ti](Br)(Br)Br UBZYKBZMAMTNKW-UHFFFAOYSA-J 0.000 claims 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims 2
- YRAJNWYBUCUFBD-UHFFFAOYSA-N 2,2,6,6-tetramethylheptane-3,5-dione Chemical compound CC(C)(C)C(=O)CC(=O)C(C)(C)C YRAJNWYBUCUFBD-UHFFFAOYSA-N 0.000 claims 1
- CEQBQHVCXGLHDW-UHFFFAOYSA-N B(=O)N.[Er] Chemical compound B(=O)N.[Er] CEQBQHVCXGLHDW-UHFFFAOYSA-N 0.000 claims 1
- ONDLMOKANOMTNR-UHFFFAOYSA-N CC1=C(C(C=C1)([Er+2])C)C Chemical group CC1=C(C(C=C1)([Er+2])C)C ONDLMOKANOMTNR-UHFFFAOYSA-N 0.000 claims 1
- JRCMYZNYPKTOPG-UHFFFAOYSA-N butylcyclopentane;erbium Chemical compound [Er].CCCC[C]1[CH][CH][CH][CH]1.CCCC[C]1[CH][CH][CH][CH]1.CCCC[C]1[CH][CH][CH][CH]1 JRCMYZNYPKTOPG-UHFFFAOYSA-N 0.000 claims 1
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 claims 1
- VSLPMIMVDUOYFW-UHFFFAOYSA-N dimethylazanide;tantalum(5+) Chemical compound [Ta+5].C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C VSLPMIMVDUOYFW-UHFFFAOYSA-N 0.000 claims 1
- JHFPQYFEJICGKC-UHFFFAOYSA-N erbium(3+) Chemical compound [Er+3] JHFPQYFEJICGKC-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 claims 1
- HSXKFDGTKKAEHL-UHFFFAOYSA-N tantalum(v) ethoxide Chemical compound [Ta+5].CC[O-].CC[O-].CC[O-].CC[O-].CC[O-] HSXKFDGTKKAEHL-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662362936P | 2016-07-15 | 2016-07-15 | |
| US62/362,936 | 2016-07-15 | ||
| US15/646,602 | 2017-07-11 | ||
| US15/646,602 US20180016678A1 (en) | 2016-07-15 | 2017-07-11 | Multi-layer coating with diffusion barrier layer and erosion resistant layer |
| PCT/US2017/042110 WO2018013909A1 (en) | 2016-07-15 | 2017-07-14 | Multi-layer coating with diffusion barrier layer and erosion resistant layer |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019135023A Division JP7048544B2 (ja) | 2016-07-15 | 2019-07-23 | 拡散障壁層及び浸食防止層を有する多層コーティング |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019522104A JP2019522104A (ja) | 2019-08-08 |
| JP2019522104A5 true JP2019522104A5 (https=) | 2020-08-20 |
| JP7053452B2 JP7053452B2 (ja) | 2022-04-12 |
Family
ID=60941682
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018503240A Active JP7053452B2 (ja) | 2016-07-15 | 2017-07-14 | 拡散障壁層及び浸食防止層を有する多層コーティング |
| JP2019135023A Active JP7048544B2 (ja) | 2016-07-15 | 2019-07-23 | 拡散障壁層及び浸食防止層を有する多層コーティング |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019135023A Active JP7048544B2 (ja) | 2016-07-15 | 2019-07-23 | 拡散障壁層及び浸食防止層を有する多層コーティング |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20180016678A1 (https=) |
| JP (2) | JP7053452B2 (https=) |
| KR (2) | KR102481950B1 (https=) |
| CN (2) | CN107849704A (https=) |
| TW (2) | TW201827626A (https=) |
| WO (1) | WO2018013909A1 (https=) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9828672B2 (en) | 2015-03-26 | 2017-11-28 | Lam Research Corporation | Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma |
| US9850573B1 (en) * | 2016-06-23 | 2017-12-26 | Applied Materials, Inc. | Non-line of sight deposition of erbium based plasma resistant ceramic coating |
| US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
| US10535525B2 (en) * | 2017-08-31 | 2020-01-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming semiconductor device structure |
| US11469084B2 (en) | 2017-09-05 | 2022-10-11 | Lam Research Corporation | High temperature RF connection with integral thermal choke |
| CN108091746B (zh) * | 2017-11-13 | 2019-06-25 | 厦门市三安光电科技有限公司 | 一种半导体元件 |
| US11761079B2 (en) | 2017-12-07 | 2023-09-19 | Lam Research Corporation | Oxidation resistant protective layer in chamber conditioning |
| US10760158B2 (en) | 2017-12-15 | 2020-09-01 | Lam Research Corporation | Ex situ coating of chamber components for semiconductor processing |
| US11990360B2 (en) | 2018-01-31 | 2024-05-21 | Lam Research Corporation | Electrostatic chuck (ESC) pedestal voltage isolation |
| US11086233B2 (en) * | 2018-03-20 | 2021-08-10 | Lam Research Corporation | Protective coating for electrostatic chucks |
| WO2019240915A1 (en) | 2018-06-14 | 2019-12-19 | Applied Materials, Inc. | Process chamber process kit with protective coating |
| US11401599B2 (en) * | 2018-06-18 | 2022-08-02 | Applied Materials, Inc. | Erosion resistant metal silicate coatings |
| TWI902284B (zh) * | 2018-07-18 | 2025-10-21 | 美商應用材料股份有限公司 | 原子層沉積所沉積的抗侵蝕金屬氟化物塗層 |
| US20200024735A1 (en) * | 2018-07-18 | 2020-01-23 | Applied Materials, Inc. | Erosion resistant metal fluoride coatings deposited by atomic layer deposition |
| US11183368B2 (en) | 2018-08-02 | 2021-11-23 | Lam Research Corporation | RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks |
| CN109107862A (zh) * | 2018-09-29 | 2019-01-01 | 苏州三星电子电脑有限公司 | 金属材料加工方法 |
| US12371781B2 (en) | 2018-10-19 | 2025-07-29 | Lam Research Corporation | In situ protective coating of chamber components for semiconductor processing |
| US11562890B2 (en) | 2018-12-06 | 2023-01-24 | Applied Materials, Inc. | Corrosion resistant ground shield of processing chamber |
| US20220130705A1 (en) * | 2019-02-22 | 2022-04-28 | Lam Research Corporation | Electrostatic chuck with powder coating |
| US11390947B2 (en) * | 2019-03-04 | 2022-07-19 | Applied Materials, Inc. | Method of forming a fluorinated metal film |
| US10858741B2 (en) | 2019-03-11 | 2020-12-08 | Applied Materials, Inc. | Plasma resistant multi-layer architecture for high aspect ratio parts |
| CN110015895A (zh) * | 2019-04-01 | 2019-07-16 | 中国有色桂林矿产地质研究院有限公司 | 一种氧化铝-氧化锆-氧化钇-氮化钛纳米复合陶瓷粉体及其制备方法 |
| US11118263B2 (en) * | 2019-05-10 | 2021-09-14 | Applied Materials, Inc. | Method for forming a protective coating film for halide plasma resistance |
| CN112053929A (zh) * | 2019-06-06 | 2020-12-08 | 中微半导体设备(上海)股份有限公司 | 用于等离子体腔室内部的部件及其制作方法 |
| EP4010916A4 (en) * | 2019-08-09 | 2023-08-09 | Applied Materials, Inc. | Protective multilayer coating for processing chamber components |
| US11402245B2 (en) | 2019-08-13 | 2022-08-02 | Rosemount Aerospace Inc. | Air data probe corrosion protection |
| US11540432B2 (en) | 2019-09-26 | 2022-12-27 | Applied Materials, Inc. | Ultrathin conformal coatings for electrostatic dissipation in semiconductor process tools |
| US20240076776A1 (en) * | 2019-10-08 | 2024-03-07 | Applied Materials, Inc. | Methods for depositing anti-coking protective coatings on aerospace components |
| KR102936161B1 (ko) * | 2019-12-09 | 2026-03-09 | 엔테그리스, 아이엔씨. | 다중 장벽 재료로 제조된 확산 장벽, 그리고 관련 물품 및 방법 |
| CN112981323A (zh) * | 2019-12-12 | 2021-06-18 | 有研工程技术研究院有限公司 | 一种氧化铝/氧化铒陶瓷涂层复合体系及其制备方法 |
| US11658014B2 (en) * | 2020-04-11 | 2023-05-23 | Applied Materials, Inc. | Apparatuses and methods of protecting nickel and nickel containing components with thin films |
| EP4179127A4 (en) * | 2020-07-09 | 2025-04-02 | Entegris, Inc. | Coatings with fluorinated yttrium oxide and a metal oxide, and methods for producing and using the coatings |
| JP7699217B2 (ja) | 2021-03-19 | 2025-06-26 | インテグリス・インコーポレーテッド | フッ素化イットリウムコーティングを有する基材、ならびに基材を製造および使用する方法 |
| US20230317634A1 (en) * | 2022-04-05 | 2023-10-05 | Applied Materials, Inc. | Coatings with diffusion barriers for corrosion and contamination protection |
| KR20240012676A (ko) | 2022-07-21 | 2024-01-30 | 삼성전자주식회사 | 적층 구조를 갖는 내플라즈마성 부재 및 그 제조 방법 |
| WO2024225362A1 (ja) * | 2023-04-27 | 2024-10-31 | Ａｇｃ株式会社 | 酸化アルミニウム質膜およびその製造方法ならびに積層体 |
| CN222908066U (zh) * | 2024-07-09 | 2025-05-27 | 苏州迈为科技股份有限公司 | 真空腔体及太阳能电池加工设备 |
Family Cites Families (107)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4935073A (en) | 1981-11-27 | 1990-06-19 | Sri International | Process for applying coatings of zirconium and/or titantuim and a less noble metal to metal substrates and for converting the zirconium and/or titanium to an oxide, nitride, carbide, boride or silicide |
| US4724169A (en) | 1984-10-09 | 1988-02-09 | Ovonic Synthetic Materials Company, Inc. | Method of producing multilayer coatings on a substrate |
| US5805973A (en) | 1991-03-25 | 1998-09-08 | General Electric Company | Coated articles and method for the prevention of fuel thermal degradation deposits |
| US5630314A (en) | 1992-09-10 | 1997-05-20 | Hitachi, Ltd. | Thermal stress relaxation type ceramic coated heat-resistant element |
| FI96138C (fi) | 1992-12-23 | 1996-05-10 | Noptel Oy | Laitteisto ja menetelmä raiteen mittaukseen ja oikaisuun |
| JPH07126827A (ja) | 1993-10-28 | 1995-05-16 | Nippon Alum Co Ltd | 金属表面の複合皮膜及びその形成方法 |
| JP3362113B2 (ja) | 1997-07-15 | 2003-01-07 | 日本碍子株式会社 | 耐蝕性部材、ウエハー設置部材および耐蝕性部材の製造方法 |
| JP2000313656A (ja) | 1999-04-28 | 2000-11-14 | Taiheiyo Cement Corp | 耐蝕性セラミックス材料および耐蝕性部材 |
| US6352620B2 (en) | 1999-06-28 | 2002-03-05 | Applied Materials, Inc. | Staged aluminum deposition process for filling vias |
| KR20010062209A (ko) | 1999-12-10 | 2001-07-07 | 히가시 데쓰로 | 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치 |
| JP3510993B2 (ja) * | 1999-12-10 | 2004-03-29 | トーカロ株式会社 | プラズマ処理容器内部材およびその製造方法 |
| FI117979B (fi) | 2000-04-14 | 2007-05-15 | Asm Int | Menetelmä oksidiohutkalvojen valmistamiseksi |
| US6685991B2 (en) | 2000-07-31 | 2004-02-03 | Shin-Etsu Chemical Co., Ltd. | Method for formation of thermal-spray coating layer of rare earth fluoride |
| US6613442B2 (en) | 2000-12-29 | 2003-09-02 | Lam Research Corporation | Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof |
| US6916534B2 (en) | 2001-03-08 | 2005-07-12 | Shin-Etsu Chemical Co., Ltd. | Thermal spray spherical particles, and sprayed components |
| US6830622B2 (en) | 2001-03-30 | 2004-12-14 | Lam Research Corporation | Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof |
| JP2002356387A (ja) | 2001-03-30 | 2002-12-13 | Toshiba Ceramics Co Ltd | 耐プラズマ性部材 |
| JP4277973B2 (ja) | 2001-07-19 | 2009-06-10 | 日本碍子株式会社 | イットリア−アルミナ複合酸化物膜の製造方法、イットリア−アルミナ複合酸化物膜および耐蝕性部材 |
| JP4921652B2 (ja) | 2001-08-03 | 2012-04-25 | エイエスエム インターナショナル エヌ．ヴェー． | イットリウム酸化物およびランタン酸化物薄膜を堆積する方法 |
| US20030029563A1 (en) | 2001-08-10 | 2003-02-13 | Applied Materials, Inc. | Corrosion resistant coating for semiconductor processing chamber |
| US7371467B2 (en) | 2002-01-08 | 2008-05-13 | Applied Materials, Inc. | Process chamber component having electroplated yttrium containing coating |
| US20080213496A1 (en) | 2002-02-14 | 2008-09-04 | Applied Materials, Inc. | Method of coating semiconductor processing apparatus with protective yttrium-containing coatings |
| JP2003277051A (ja) | 2002-03-22 | 2003-10-02 | Ngk Insulators Ltd | イットリア−アルミナ複合酸化物膜を有する積層体、イットリア−アルミナ複合酸化物膜、耐蝕性部材、耐蝕性膜およびイットリア−アルミナ複合酸化物膜の製造方法 |
| DE60319470T2 (de) | 2002-08-02 | 2009-03-26 | Fujikura Ltd. | Herstellungsverfahren für einen polykristallinen Dünnfilm und Herstellungsverfahren für ein Oxidsupraleiter-Bauelement |
| KR100772740B1 (ko) | 2002-11-28 | 2007-11-01 | 동경 엘렉트론 주식회사 | 플라즈마 처리 용기 내부재 |
| US7560376B2 (en) | 2003-03-31 | 2009-07-14 | Tokyo Electron Limited | Method for adjoining adjacent coatings on a processing element |
| CN1288108C (zh) | 2003-10-24 | 2006-12-06 | 东芝陶瓷股份有限会社 | 耐等离子体构件、其制造方法及形成热喷涂涂层的方法 |
| ITRM20030602A1 (it) * | 2003-12-24 | 2005-06-25 | Ct Sviluppo Materiali Spa | Procedimento di produzione di rivestimento multistrato |
| JP4606121B2 (ja) | 2004-01-29 | 2011-01-05 | 京セラ株式会社 | 耐食膜積層耐食性部材およびその製造方法 |
| US7282254B1 (en) * | 2004-02-23 | 2007-10-16 | The Research Foundation Of State University Of New York | Surface coating for electronic systems |
| DE102004031255B4 (de) * | 2004-06-29 | 2014-02-13 | MTU Aero Engines AG | Einlaufbelag |
| JP2006186306A (ja) | 2004-09-30 | 2006-07-13 | Toshiba Ceramics Co Ltd | ガス拡散プレートおよびその製造方法 |
| KR101226120B1 (ko) | 2004-10-26 | 2013-01-24 | 쿄세라 코포레이션 | 내식성 부재 및 그 제조방법 |
| US7449409B2 (en) * | 2005-03-14 | 2008-11-11 | Infineon Technologies Ag | Barrier layer for conductive features |
| KR100915722B1 (ko) | 2005-06-23 | 2009-09-04 | 도쿄엘렉트론가부시키가이샤 | 반도체 처리 장치용의 구성 부재 및 그 제조 방법, 및반도체 처리 장치 |
| US7968205B2 (en) | 2005-10-21 | 2011-06-28 | Shin-Etsu Chemical Co., Ltd. | Corrosion resistant multilayer member |
| US20080016684A1 (en) * | 2006-07-06 | 2008-01-24 | General Electric Company | Corrosion resistant wafer processing apparatus and method for making thereof |
| CN101101887A (zh) * | 2006-07-06 | 2008-01-09 | 通用电气公司 | 抗腐蚀的晶片处理设备及其制造方法 |
| US20080029032A1 (en) | 2006-08-01 | 2008-02-07 | Sun Jennifer Y | Substrate support with protective layer for plasma resistance |
| JP5252613B2 (ja) | 2006-12-25 | 2013-07-31 | 国立大学法人東北大学 | イオン注入装置およびイオン注入方法 |
| KR101119075B1 (ko) | 2007-03-12 | 2012-03-15 | 주식회사 코미코 | 웨이퍼 이송 장치 |
| US10622194B2 (en) | 2007-04-27 | 2020-04-14 | Applied Materials, Inc. | Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance |
| US7696117B2 (en) | 2007-04-27 | 2010-04-13 | Applied Materials, Inc. | Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas |
| KR100863932B1 (ko) | 2007-07-10 | 2008-11-18 | 주식회사 코미코 | 세라믹 용사 코팅층의 수화 처리 방법과, 이를 이용한정전척 제조 방법 그리고 상기 수화 처리 방법에 형성된세라믹 용사 코팅층을 갖는 기판 구조물 및 정전척 |
| US20090046825A1 (en) * | 2007-08-16 | 2009-02-19 | Ge-Hitachi Nuclear Energy Americas Llc | Protective coating applied to metallic reactor components to reduce corrosion products into the nuclear reactor environment |
| KR100982649B1 (ko) | 2007-08-22 | 2010-09-16 | 주식회사 코미코 | 용사 코팅 방법, 이를 이용한 정전척 제조 방법 및 정전척 |
| KR100859672B1 (ko) | 2007-12-31 | 2008-09-23 | 주식회사 코미코 | 용사 코팅 방법 |
| US20090214825A1 (en) | 2008-02-26 | 2009-08-27 | Applied Materials, Inc. | Ceramic coating comprising yttrium which is resistant to a reducing plasma |
| EP2143819A1 (de) * | 2008-07-11 | 2010-01-13 | Siemens Aktiengesellschaft | Beschichtungsverfahren und Korrosionsschutzbeschichtung für Turbinen-Komponenten |
| US8206829B2 (en) | 2008-11-10 | 2012-06-26 | Applied Materials, Inc. | Plasma resistant coatings for plasma chamber components |
| US9017765B2 (en) | 2008-11-12 | 2015-04-28 | Applied Materials, Inc. | Protective coatings resistant to reactive plasma processing |
| US8858745B2 (en) | 2008-11-12 | 2014-10-14 | Applied Materials, Inc. | Corrosion-resistant bonding agents for bonding ceramic components which are exposed to plasmas |
| TW201100578A (en) | 2009-06-19 | 2011-01-01 | Saint Gobain Ceramics & Plastics Inc | Sealed plasma coatings |
| WO2011049938A2 (en) | 2009-10-20 | 2011-04-28 | Saint-Gobain Ceramics & Plastics, Inc. | Microelectronic processing component having a corrosion-resistant layer, microelectronic workpiece processing apparatus incorporating same, and method of forming an article having the corrosion-resistant layer |
| TW201209957A (en) | 2010-05-28 | 2012-03-01 | Praxair Technology Inc | Substrate supports for semiconductor applications |
| US20120183790A1 (en) * | 2010-07-14 | 2012-07-19 | Christopher Petorak | Thermal spray composite coatings for semiconductor applications |
| US9728429B2 (en) | 2010-07-27 | 2017-08-08 | Lam Research Corporation | Parasitic plasma prevention in plasma processing chambers |
| US8916021B2 (en) | 2010-10-27 | 2014-12-23 | Applied Materials, Inc. | Electrostatic chuck and showerhead with enhanced thermal properties and methods of making thereof |
| US9166364B2 (en) * | 2011-02-14 | 2015-10-20 | Spectrasensors, Inc. | Semiconductor laser mounting with intact diffusion barrier layer |
| US8623468B2 (en) | 2012-01-05 | 2014-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of fabricating metal hard masks |
| US9034199B2 (en) | 2012-02-21 | 2015-05-19 | Applied Materials, Inc. | Ceramic article with reduced surface defect density and process for producing a ceramic article |
| US9090046B2 (en) | 2012-04-16 | 2015-07-28 | Applied Materials, Inc. | Ceramic coated article and process for applying ceramic coating |
| US20130288037A1 (en) | 2012-04-27 | 2013-10-31 | Applied Materials, Inc. | Plasma spray coating process enhancement for critical chamber components |
| US9394615B2 (en) | 2012-04-27 | 2016-07-19 | Applied Materials, Inc. | Plasma resistant ceramic coated conductive article |
| KR101637801B1 (ko) | 2012-05-22 | 2016-07-07 | 가부시끼가이샤 도시바 | 플라즈마 처리 장치용 부품 및 플라즈마 처리 장치용 부품의 제조 방법 |
| TW201408679A (zh) | 2012-05-25 | 2014-03-01 | Air Liquide | 用於蒸氣沈積之含鈦前驅物 |
| US9343289B2 (en) | 2012-07-27 | 2016-05-17 | Applied Materials, Inc. | Chemistry compatible coating material for advanced device on-wafer particle performance |
| KR101249951B1 (ko) | 2012-10-24 | 2013-04-03 | 아이원스 주식회사 | 공정 장비의 코팅 방법 및 이를 이용한 코팅 구조 |
| CN103794458B (zh) | 2012-10-29 | 2016-12-21 | 中微半导体设备(上海)有限公司 | 用于等离子体处理腔室内部的部件及制造方法 |
| CN103794445B (zh) | 2012-10-29 | 2016-03-16 | 中微半导体设备(上海)有限公司 | 用于等离子体处理腔室的静电夹盘组件及制造方法 |
| CN103794460B (zh) | 2012-10-29 | 2016-12-21 | 中微半导体设备(上海)有限公司 | 用于半导体装置性能改善的涂层 |
| US20140272341A1 (en) * | 2013-03-14 | 2014-09-18 | Applied Materials, Inc. | Thermal treated sandwich structure layer to improve adhesive strength |
| US9666466B2 (en) | 2013-05-07 | 2017-05-30 | Applied Materials, Inc. | Electrostatic chuck having thermally isolated zones with minimal crosstalk |
| US9850568B2 (en) | 2013-06-20 | 2017-12-26 | Applied Materials, Inc. | Plasma erosion resistant rare-earth oxide based thin film coatings |
| US9711334B2 (en) | 2013-07-19 | 2017-07-18 | Applied Materials, Inc. | Ion assisted deposition for rare-earth oxide based thin film coatings on process rings |
| US9583369B2 (en) | 2013-07-20 | 2017-02-28 | Applied Materials, Inc. | Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles |
| US9624593B2 (en) | 2013-08-29 | 2017-04-18 | Applied Materials, Inc. | Anodization architecture for electro-plate adhesion |
| US20150079370A1 (en) * | 2013-09-18 | 2015-03-19 | Applied Materials, Inc. | Coating architecture for plasma sprayed chamber components |
| JP6394171B2 (ja) | 2013-10-30 | 2018-09-26 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
| US9440886B2 (en) | 2013-11-12 | 2016-09-13 | Applied Materials, Inc. | Rare-earth oxide based monolithic chamber material |
| US9725799B2 (en) | 2013-12-06 | 2017-08-08 | Applied Materials, Inc. | Ion beam sputtering with ion assisted deposition for coatings on chamber components |
| JP6058821B2 (ja) | 2014-01-17 | 2017-01-11 | イオンズ カンパニー リミテッド | 複合被膜粒子粒径を有する被膜の形成方法およびこれによる被膜 |
| CN107078086B (zh) | 2014-02-07 | 2021-01-26 | 恩特格里斯公司 | 静电夹具以及制造其之方法 |
| JPWO2015151857A1 (ja) | 2014-03-31 | 2017-04-13 | 株式会社東芝 | 耐プラズマ部品及び耐プラズマ部品の製造方法及び耐プラズマ部品の製造に用いる膜堆積装置 |
| US9869013B2 (en) * | 2014-04-25 | 2018-01-16 | Applied Materials, Inc. | Ion assisted deposition top coat of rare-earth oxide |
| US20150311043A1 (en) | 2014-04-25 | 2015-10-29 | Applied Materials, Inc. | Chamber component with fluorinated thin film coating |
| US9976211B2 (en) | 2014-04-25 | 2018-05-22 | Applied Materials, Inc. | Plasma erosion resistant thin film coating for high temperature application |
| US10730798B2 (en) | 2014-05-07 | 2020-08-04 | Applied Materials, Inc. | Slurry plasma spray of plasma resistant ceramic coating |
| US10385459B2 (en) | 2014-05-16 | 2019-08-20 | Applied Materials, Inc. | Advanced layered bulk ceramics via field assisted sintering technology |
| US10196728B2 (en) | 2014-05-16 | 2019-02-05 | Applied Materials, Inc. | Plasma spray coating design using phase and stress control |
| CN105088141A (zh) * | 2014-05-23 | 2015-11-25 | 中微半导体设备(上海)有限公司 | 电感耦合型等离子体处理腔室及其抗腐蚀绝缘窗口及制造方法 |
| US9551070B2 (en) | 2014-05-30 | 2017-01-24 | Applied Materials, Inc. | In-situ corrosion resistant substrate support coating |
| US9790581B2 (en) | 2014-06-25 | 2017-10-17 | Fm Industries, Inc. | Emissivity controlled coatings for semiconductor chamber components |
| KR101465640B1 (ko) * | 2014-08-08 | 2014-11-28 | 주식회사 펨빅스 | 불화알루미늄 생성방지막이 형성된 ｃｖｄ 공정챔버 부품 |
| US9460898B2 (en) | 2014-08-08 | 2016-10-04 | Applied Materials, Inc. | Plasma generation chamber with smooth plasma resistant coating |
| KR20160030812A (ko) | 2014-09-11 | 2016-03-21 | 삼성전자주식회사 | 플라즈마 처리 장치 |
| US10141582B2 (en) | 2014-12-22 | 2018-11-27 | Sonata Scientific LLC | SOFC interconnect barriers and methods of making same |
| SG11201706564UA (en) | 2015-02-13 | 2017-09-28 | Entegris Inc | Coatings for enhancement of properties and performance of substrate articles and apparatus |
| CN105986245A (zh) | 2015-02-16 | 2016-10-05 | 中微半导体设备(上海)有限公司 | 改善mocvd反应工艺的部件及改善方法 |
| CN107532283B (zh) | 2015-03-18 | 2021-01-15 | 恩特格里斯公司 | 涂覆有氟退火膜的物件 |
| KR101661640B1 (ko) | 2015-03-19 | 2016-09-30 | 아이원스 주식회사 | 정전척 |
| US9790582B2 (en) | 2015-04-27 | 2017-10-17 | Lam Research Corporation | Long lifetime thermal spray coating for etching or deposition chamber application |
| US20160358749A1 (en) | 2015-06-04 | 2016-12-08 | Lam Research Corporation | Plasma etching device with plasma etch resistant coating |
| US20160379806A1 (en) | 2015-06-25 | 2016-12-29 | Lam Research Corporation | Use of plasma-resistant atomic layer deposition coatings to extend the lifetime of polymer components in etch chambers |
| US20160375515A1 (en) * | 2015-06-29 | 2016-12-29 | Lam Research Corporation | Use of atomic layer deposition coatings to protect brazing line against corrosion, erosion, and arcing |
| JP2017092156A (ja) | 2015-11-03 | 2017-05-25 | ナショナル チュン−シャン インスティテュート オブ サイエンス アンド テクノロジー | 高密度のプラズマ及び高温の半導体製造プロセスに用いられる窒化アルミニウムの静電チャンク |
| CN106544622A (zh) | 2016-11-18 | 2017-03-29 | 无锡明盛纺织机械有限公司 | 一种梯度复合耐磨涂层的制备方法 |
-
2017
- 2017-07-11 US US15/646,602 patent/US20180016678A1/en not_active Abandoned
- 2017-07-14 WO PCT/US2017/042110 patent/WO2018013909A1/en not_active Ceased
- 2017-07-14 KR KR1020197005973A patent/KR102481950B1/ko active Active
- 2017-07-14 TW TW107101620A patent/TW201827626A/zh unknown
- 2017-07-14 KR KR1020187004122A patent/KR102481924B1/ko active Active
- 2017-07-14 CN CN201780002518.0A patent/CN107849704A/zh not_active Withdrawn
- 2017-07-14 JP JP2018503240A patent/JP7053452B2/ja active Active
- 2017-07-14 TW TW106123559A patent/TW201823487A/zh unknown
- 2017-07-14 CN CN201810637499.5A patent/CN108531907A/zh not_active Withdrawn
- 2017-12-15 US US15/844,335 patent/US11008653B2/en active Active
-
2019
- 2019-07-23 JP JP2019135023A patent/JP7048544B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2019522104A5 (https=) | ||
| US12104246B2 (en) | Atomic layer deposition of protective coatings for semiconductor process chamber components | |
| US11008653B2 (en) | Multi-layer coating with diffusion barrier layer and erosion resistant layer | |
| JP2018150617A5 (https=) | ||
| JP6472203B2 (ja) | ＴＤＭＡＴ又はＴＤＥＡＴを用いてＰＥＡＬＤによりＴｉ含有膜を形成する方法 | |
| TWI564944B (zh) | 減少兩個不同含金屬薄膜之間的界面處的氧化的方法與於蝕刻停止層上沈積金屬層的方法 | |
| TWI737379B (zh) | 用於處理腔室部件之保護性多層塗層 | |
| JP2008538126A5 (https=) | ||
| JP2019522113A5 (https=) | ||
| US20130183445A1 (en) | Enhanced thin film deposition | |
| US10875774B2 (en) | Tritertbutyl aluminum reactants for vapor deposition | |
| JP2010518645A5 (https=) | ||
| JP7846951B2 (ja) | 原子層堆積法で堆積させた耐浸食性金属酸化物コーティング | |
| JP7250397B2 (ja) | ハロゲン不活性化を使用した選択的膜堆積 | |
| JP3224084U (ja) | 原子層堆積法で堆積させた耐浸食性金属フッ化物コーティング | |
| JP2024116282A5 (https=) | ||
| JPWO2020036819A5 (https=) | ||
| KR20150087065A (ko) | 공구에서 박막형성을 수월하게 하는 중간층을 갖는 cvd코팅 방법 | |
| WO2016147664A1 (ja) | 積層体及びその製造方法、並びにガスバリアフィルム及びその製造方法 | |
| KR20200099994A (ko) | 산화물들 및 질화물들의 원자층 퇴적 | |
| KR20020034632A (ko) | 커패시터의 티타늄질화막 형성방법 |