JP2019519092A - 新規な化合物半導体およびその活用 - Google Patents
新規な化合物半導体およびその活用 Download PDFInfo
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 110
- 239000004065 semiconductor Substances 0.000 title claims abstract description 83
- 239000000126 substance Substances 0.000 claims abstract description 34
- 229910020712 Co—Sb Inorganic materials 0.000 claims abstract description 20
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 19
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 16
- 229910052718 tin Inorganic materials 0.000 claims abstract description 16
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 12
- 239000011800 void material Substances 0.000 claims abstract description 5
- 238000006243 chemical reaction Methods 0.000 claims description 32
- 238000010438 heat treatment Methods 0.000 claims description 29
- 239000000203 mixture Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 23
- 238000005245 sintering Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 29
- 230000000052 comparative effect Effects 0.000 description 12
- 239000011669 selenium Substances 0.000 description 12
- 230000031700 light absorption Effects 0.000 description 6
- 239000002994 raw material Substances 0.000 description 5
- 238000002490 spark plasma sintering Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- GSJBKPNSLRKRNR-UHFFFAOYSA-N $l^{2}-stannanylidenetin Chemical compound [Sn].[Sn] GSJBKPNSLRKRNR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- SKYGTJFKXUWZMD-UHFFFAOYSA-N ac1l2n4h Chemical compound [Co].[Co] SKYGTJFKXUWZMD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- FAWGZAFXDJGWBB-UHFFFAOYSA-N antimony(3+) Chemical compound [Sb+3] FAWGZAFXDJGWBB-UHFFFAOYSA-N 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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- C01B19/00—Selenium; Tellurium; Compounds thereof
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
Description
本出願は、2016年12月28日付の韓国特許出願第10−2016−0181147号および2017年12月21日付の韓国特許出願第10−2017−0177275号に基づく優先権の利益を主張し、当該韓国特許出願の文献に開示されたすべての内容は本明細書の一部として含まれる。
[化学式1]
SnxSyCo4Sb12−zQz
前記化学式1において、Qは、O、Se、およびTeからなる群より選択された1種以上であり、0<x<0.2、0<y≦1、および0<z<12である。前記O、Se、およびTeからなる群より選択された1種以上の元素とは、O、Se、Te単独、またはこれらの2種以上の混合を意味することができる。
実施例1
Co4Sb12スクッテルド化合物;前記Co4Sb12スクッテルド化合物の内部空隙にSnおよびSが充填され、前記Co4Sb12スクッテルド化合物のSbにTeがドーピングされたSn0.05S0.2Co4Sb11.4Te0.6を次の方法で合成した。
混合物の組成をSn0.1S0.2Co4Sb11.4Te0.6に変更したことを除き、前記実施例1と同様の方法で化合物半導体を製造した。
混合物の組成をSn0.15S0.2Co4Sb11.4Te0.6に変更したことを除き、前記実施例1と同様の方法で化合物半導体を製造した。
比較例1
試薬としてS、Co、Sb、およびTeを準備し、混合物の組成をS0.2Co4Sb11.4Te0.6に変更したことを除き、前記実施例1と同様の方法で化合物半導体を製造した。
試薬としてSn、Co、Sb、およびTeを準備し、混合物の組成をSn0.05Co4Sb11.4Te0.6に変更したことを除き、前記実施例1と同様の方法で化合物半導体を製造した。
混合物の組成をSn0.2S0.2Co4Sb11.4Te0.6に変更したことを除き、前記実施例1と同様の方法で化合物半導体を製造した。
前記実施例および比較例で得られた化合物半導体の物性を下記方法で測定し、その結果を表1および表2に示した。
前記実施例および比較例で得られた化合物半導体を直径12.7mm、高さ1.5mmのcoin−typeに加工して試験片を製造した。そして、前記試験片に対して、50℃から500℃までの範囲でレーザフラッシュ法(Netzsch、LFA−457)による熱拡散度、比熱、そして密度の測定値から熱伝導度を算出した後、ローレンツ数を計算し、その値を算出された熱伝導度に適用させて格子熱伝導度を求め、その結果を下記表1に示した。
前記実施例および比較例で得られた化合物半導体を横3mm、縦3mm、高さ12mmのrectangular−typeに加工して試験片を製造した。そして、前記試験片に対して、50℃から500℃までの範囲でZEM−3(Ulvac−Rico,Inc)を用いて電気伝導度およびゼーベック係数を測定した。
[数式]
ZT=σS2T/K
ここで、ZTは熱電性能指数、σは電気伝導度、Sはゼーベック係数、Tは温度、Kは熱伝導度を示す。
Claims (14)
- Co−Sbスクッテルド化合物;前記Co−Sbスクッテルド化合物の内部空隙に含まれているSnおよびS;並びに前記Co−Sbスクッテルド化合物のSbと置換されたQを含み、下記化学式1で表される化合物半導体:
[化学式1]
SnxSyCo4Sb12−zQz
前記化学式1において、Qは、O、Se、およびTeからなる群より選択された1種以上であり、0<x<0.2、0<y≦1、および0<z<12である。 - 前記化学式1のy1モルに対するxのモル比は、0.1モル〜0.9モルである、請求項1に記載の化合物半導体。
- 前記y1モルに対するxのモル比は、0.2モル〜0.8モルである、請求項1に記載の化合物半導体。
- 前記化学式1のzは、0<z≦4である、請求項1に記載の化合物半導体。
- 前記化学式1のz1モルに対するxのモル比は、0.01モル〜0.5モルである、請求項1に記載の化合物半導体。
- 前記化学式1のz1モルに対するxのモル比は、0.05モル〜0.3モルである、請求項1に記載の化合物半導体。
- 前記Co−Sbスクッテルド化合物は、単位格子あたり2つの空隙を含む、請求項1に記載の化合物半導体。
- 前記化合物半導体は、
N型化合物半導体である、請求項1に記載の化合物半導体。 - O、Se、およびTeからなる群より選択された1種以上の元素、Sn、S、Co、およびSbを含む混合物を形成する段階;および
前記混合物を熱処理する段階を含む請求項1に記載の化合物半導体の製造方法。 - 前記熱処理段階は、400℃〜800℃で行われることを特徴とする、請求項9に記載の化合物半導体の製造方法。
- 前記熱処理段階は、2以上の熱処理段階を含むことを特徴とする、請求項9に記載の化合物半導体の製造方法。
- 前記混合物を熱処理段階の後、加圧焼結段階をさらに含むことを特徴とする、請求項9に記載の化合物半導体の製造方法。
- 請求項1〜8のいずれか1項に記載の化合物半導体を含む熱電変換素子。
- 請求項1〜8のいずれか1項に記載の化合物半導体を含む太陽電池。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2016-0181147 | 2016-12-28 | ||
KR20160181147 | 2016-12-28 | ||
KR10-2017-0177275 | 2017-12-21 | ||
KR1020170177275A KR102123042B1 (ko) | 2016-12-28 | 2017-12-21 | 신규한 화합물 반도체 및 그 활용 |
PCT/KR2017/015374 WO2018124660A1 (ko) | 2016-12-28 | 2017-12-22 | 신규한 화합물 반도체 및 그 활용 |
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JP2019519092A true JP2019519092A (ja) | 2019-07-04 |
JP6775841B2 JP6775841B2 (ja) | 2020-10-28 |
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US (1) | US11072530B2 (ja) |
EP (1) | EP3447812B1 (ja) |
JP (1) | JP6775841B2 (ja) |
KR (1) | KR102123042B1 (ja) |
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US11072530B2 (en) | 2021-07-27 |
JP6775841B2 (ja) | 2020-10-28 |
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EP3447812A1 (en) | 2019-02-27 |
CN109275341A (zh) | 2019-01-25 |
US20190144277A1 (en) | 2019-05-16 |
EP3447812B1 (en) | 2020-05-27 |
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